NBTI and leakage aware sleep transistor design for reliable and energy efficient power gating

In this paper we show that power gating techniques become more effective during their lifetime, since the aging of sleep transistors (STs) due to negative bias temperature instability (NBTI) drastically reduces leakage power. Based on this property, we propose an NBTI and leakage aware ST design method for reliable and energy efficient power gating. Through SPICE simulations, we show lifetime extension up to 19.9x and average leakage power reduction up to 14.4% compared to standard STs design approach without additional area overhead.Finally, when a maximum 10-year lifetime target is considered, we show that the proposed method allows multiple beneficial options compared to a standard STs design method: either to improve circuit operating frequency up to 9.53% or to reduce ST area overhead up to 18.4

NBTI and leakage aware sleep transistor design for reliable and energy efficient power gating

In this paper we show that power gating techniques become more effective during their lifetime, since the aging of sleep transistors (STs) due to negative bias temperature instability (NBTI) drastically reduces leakage power. Based on this property, we propose an NBTI and leakage aware ST design method for reliable and energy efficient power gating. Through SPICE simulations, we show lifetime extension up to 19.9x and average leakage power reduction up to 14.4% compared to standard STs design approach without additional area overhead. Finally, when a maximum 10-year lifetime target is considered, we show that the proposed method allows multiple beneficial options compared to a standard STs design method: either to improve circuit operating frequency up to 9.53% or to reduce ST area overhead up to 18.4%

Reliable Power Gating with NBTI Aging Benefits

In this paper, we show that Negative Bias Temperature Instability (NBTI) aging of sleep transistors (STs), together with its detrimental effect for circuit performance and lifetime, presents considerable benefits for power gated circuits. Indeed, it reduces static power due to leakage current, and increases ST switch efficiency, making power gating more efficient and effective over time. The magnitude of these aging benefits depends on operating and environmental conditions. By means of HSPICE simulations, considering a 32nm CMOS technology, we demonstrate that static power may reduce by more than 80% in 10 years of operation. Static power decrease over time due to NBTI aging is also proven experimentally, using a test-chip manufactured with a TSMC 65nm technology. We propose an ST design strategy for reliable power gating, in order to harvest the benefits offered by NBTI aging. It relies on the design of STs with a proper lower Vth compared to the standard power switching fabric. This can be achieved by either re-designing the STs with the identified Vth value, or applying a proper forward body bias to the available power switching fabrics. Through HSPICE simulations, we show lifetime extension up to 21.4X and average static power reduction up to 16.3% compared to standard ST design approach, without additional area overhead. Finally, we show lifetime extension and several performance-cost trade-offs when a target maximum lifetime is considered

Coarse-Grained Online Monitoring of BTI Aging by Reusing Power-Gating Infrastructure

In this paper, we present a novel coarse-grained technique for monitoring online the bias temperature instability (BTI) aging of circuits by exploiting their power gating infrastructure. The proposed technique relies on monitoring the discharge time of the virtual-power-network during standby operations, the value of which depends on the threshold voltage of the CMOS devices in a power-gated design (PGD). It does not require any distributed sensors, because the virtual-power-network is already distributed in a PGD. It consists of a hardware block for measuring the discharge time concurrently with normal standby operations and a processing block for estimating the BTI aging status of the PGD according to collected measurements. Through SPICE simulation, we demonstrate that the BTI aging estimation error of the proposed technique is less than 1% and 6.2% for PGDs with static operating frequency and dynamic voltage and frequency scaling, respectively. Its area cost is also found negligible. The power gating minimum idle time (MIT) cost induced by the energy consumed for monitoring the discharge time is evaluated on two scalar machine models using either x86 or ARM instruction sets. It is found less than 1.3× and 1.45× the original power gating MIT, respectively. We validate the proposed technique through accelerated aging experiments conducted with five actual chips that contain an ARM cortex M0 processor, manufactured with a 65 nm CMOS technology

Thermal Management for Dependable On-Chip Systems

This thesis addresses the dependability issues in on-chip systems from a thermal perspective. This includes an explanation and analysis of models to show the relationship between dependability and tempature. Additionally, multiple novel methods for on-chip thermal management are introduced aiming to optimize thermal properties. Analysis of the methods is done through simulation and through infrared thermal camera measurements

Cross-Layer Approaches for an Aging-Aware Design of Nanoscale Microprocessors

Thanks to aggressive scaling of transistor dimensions, computers have revolutionized our life. However, the increasing unreliability of devices fabricated in nanoscale technologies emerged as a major threat for the future success of computers. In particular, accelerated transistor aging is of great importance, as it reduces the lifetime of digital systems. This thesis addresses this challenge by proposing new methods to model, analyze and mitigate aging at microarchitecture-level and above

Solid State Circuits Technologies

The evolution of solid-state circuit technology has a long history within a relatively short period of time. This technology has lead to the modern information society that connects us and tools, a large market, and many types of products and applications. The solid-state circuit technology continuously evolves via breakthroughs and improvements every year. This book is devoted to review and present novel approaches for some of the main issues involved in this exciting and vigorous technology. The book is composed of 22 chapters, written by authors coming from 30 different institutions located in 12 different countries throughout the Americas, Asia and Europe. Thus, reflecting the wide international contribution to the book. The broad range of subjects presented in the book offers a general overview of the main issues in modern solid-state circuit technology. Furthermore, the book offers an in depth analysis on specific subjects for specialists. We believe the book is of great scientific and educational value for many readers. I am profoundly indebted to the support provided by all of those involved in the work. First and foremost I would like to acknowledge and thank the authors who worked hard and generously agreed to share their results and knowledge. Second I would like to express my gratitude to the Intech team that invited me to edit the book and give me their full support and a fruitful experience while working together to combine this book

Reliability in the face of variability in nanometer embedded memories

In this thesis, we have investigated the impact of parametric variations on the behaviour of one performance-critical processor structure - embedded memories. As variations manifest as a spread in power and performance, as a first step, we propose a novel modeling methodology that helps evaluate the impact of circuit-level optimizations on architecture-level design choices. Choices made at the design-stage ensure conflicting requirements from higher-levels are decoupled. We then complement such design-time optimizations with a runtime mechanism that takes advantage of adaptive body-biasing to lower power whilst improving performance in the presence of variability. Our proposal uses a novel fully-digital variation tracking hardware using embedded DRAM (eDRAM) cells to monitor run-time changes in cache latency and leakage. A special fine-grain body-bias generator uses the measurements to generate an optimal body-bias that is needed to meet the required yield targets. A novel variation-tolerant and soft-error hardened eDRAM cell is also proposed as an alternate candidate for replacing existing SRAM-based designs in latency critical memory structures. In the ultra low-power domain where reliable operation is limited by the minimum voltage of operation (Vddmin), we analyse the impact of failures on cache functional margin and functional yield. Towards this end, we have developed a fully automated tool (INFORMER) capable of estimating memory-wide metrics such as power, performance and yield accurately and rapidly. Using the developed tool, we then evaluate the #effectiveness of a new class of hybrid techniques in improving cache yield through failure prevention and correction. Having a holistic perspective of memory-wide metrics helps us arrive at design-choices optimized simultaneously for multiple metrics needed for maintaining lifetime requirements

Techniques for Improving Security and Trustworthiness of Integrated Circuits

The integrated circuit (IC) development process is becoming increasingly vulnerable to malicious activities because untrusted parties could be involved in this IC development flow. There are four typical problems that impact the security and trustworthiness of ICs used in military, financial, transportation, or other critical systems: (i) Malicious inclusions and alterations, known as hardware Trojans, can be inserted into a design by modifying the design during GDSII development and fabrication. Hardware Trojans in ICs may cause malfunctions, lower the reliability of ICs, leak confidential information to adversaries or even destroy the system under specifically designed conditions. (ii) The number of circuit-related counterfeiting incidents reported by component manufacturers has increased significantly over the past few years with recycled ICs contributing the largest percentage of the total reported counterfeiting incidents. Since these recycled ICs have been used in the field before, the performance and reliability of such ICs has been degraded by aging effects and harsh recycling process. (iii) Reverse engineering (RE) is process of extracting a circuit’s gate-level netlist, and/or inferring its functionality. The RE causes threats to the design because attackers can steal and pirate a design (IP piracy), identify the device technology, or facilitate other hardware attacks. (iv) Traditional tools for uniquely identifying devices are vulnerable to non-invasive or invasive physical attacks. Securing the ID/key is of utmost importance since leakage of even a single device ID/key could be exploited by an adversary to hack other devices or produce pirated devices. In this work, we have developed a series of design and test methodologies to deal with these four challenging issues and thus enhance the security, trustworthiness and reliability of ICs. The techniques proposed in this thesis include: a path delay fingerprinting technique for detection of hardware Trojans, recycled ICs, and other types counterfeit ICs including remarked, overproduced, and cloned ICs with their unique identifiers; a Built-In Self-Authentication (BISA) technique to prevent hardware Trojan insertions by untrusted fabrication facilities; an efficient and secure split manufacturing via Obfuscated Built-In Self-Authentication (OBISA) technique to prevent reverse engineering by untrusted fabrication facilities; and a novel bit selection approach for obtaining the most reliable bits for SRAM-based physical unclonable function (PUF) across environmental conditions and silicon aging effects

SATTA: a Self-Adaptive Temperature-based TDF awareness methodology for dynamically reconfigurable FPGAs

Dependability issues due to non functional properties are emerging as major cause of faults in modern digital systems. Effective countermeasures have to be presented to properly manage their critical timing effects. This paper presents a methodology to avoid transition delay faults in FPGA-based systems, with low area overhead. The approach is able to exploit temperature information and aging characteristics to minimize the cost in terms of performances degradation and power consumption. The architecture of a hardware manager able to avoid delay faults is presented and deeply analyzed, as well as its integration in the standard implementation design flow