68 research outputs found

    Advanced Modeling of SiC Power MOSFETs aimed to the Reliability Evaluation of Power Modules

    Get PDF

    Silicon carbide power devices

    Get PDF
    Abstract unavailable please refer to PD

    Analysis and optimization of the hardware design of a sic mosfet based power converter with sic schottky diodes utilizing a split output topology

    Get PDF
    In recent years, the use of power electronic devices for energy conversion with semiconductors such as silicon carbide (SiC) or gallium nitride (GaN) are replacing silicon due to their high thermal conductivity, efficiency, resistance, and the possibility of smaller and thinner designs. For this reason, in order to evaluate the improvement potential of these systems, it is beneficial to realize experimental setups that emulate real operating conditions in order to verify the correct performance of these systems. In this context and based on the previous work done by Giorgio Ferrara, this thesis focuses on the analysis and identification of improvements of a SiC MOSFET-based power electronic converter with the aim of suggesting and studying different solutions that ensure a high-performance operation that allows its correct implementation in motor traction and grid-connected applications. During the thesis work, it is carried out an in-depth analysis of the voltage peaks between drain and source originated by the fast switching of the MOSFET to evaluate the use of Snubber capacitors and it is made a new hardware design of the gate driver board using isolated gate drivers to improve the dynamic behaviour in the switching transients of the SiC transistors and provide safety and robustness to the system. Finally, maintaining the original design of the converter, it implements the split output topology to evaluate possible solutions to the problems of electromagnetic interference (EMI) and the crosstalk effect that occurs with high frequency switchingNegli ultimi anni, l'uso di dispositivi elettronici di potenza per la conversione dell'energia con semiconduttori come il carburo di silicio (SiC) o il nitruro di gallio (GaN) sta sostituendo il silicio grazie alla sua elevata conducibilità termica, all'efficienza, alla resistenza e alla possibilità di realizzare disegni più piccoli e sottili. Per questo motivo, al fine di valutare il potenziale di miglioramento di questi sistemi, è utile realizzare set-up sperimentali che emulino le condizioni operative reali, in modo da poter eseguire diversi test per verificare il corretto comportamento di questi sistemi. In tale contesto e a partire dal precedente lavoro effettuato per Giorgio Ferrara, la presente tesi si concentra nell' analisi e nidentificazione di miglioramenti di un convertitore di potenza DC-AC a commutazione, al fine di proporre e studiare diverse soluzioni che garantiscano le elevate prestazioni che assicurano la sua corretta implementazione in applicazioni di trazione a motore e di connessione alla rete. Durante il lavoro di tesi, si analizza in dettaglio il fenomeno di picchi di tensione tra drain e source causato per la commutazione veloce del MOSFET e si valuta l'utilizzo di condensatori snubber; in più si realizza un nuovo disegno hardware della board di gate driver utilizzando gate driver isolati per migliorare il comportamento dinamico nei transitori di commutazione dei transistor SiC e per fornire sicurezza e robustezza al sistema. Per finire, mantenendo il disegno originale del convertitore, implementa la topologia di uscita Split Output per valutare possibili soluzioni ai problemi di interferenza elettromagnetica (EMI) e all'effetto diafonia che si produce con la commutazione ad alta frequenzaObjectius de Desenvolupament Sostenible::9 - Indústria, Innovació i Infraestructura::9.5 - Augmentar la investigació científica i millorar la capacitat tecnològica dels sectors industrials de tots els països, en particular els països en desenvolupament, entre d’altres maneres fomentant la innovació i augmentant substancialment, d’aquí al 2030, el nombre de persones que treballen en el camp de la investigació i el desenvolupa­ment per cada milió d’habitants, així com la despesa en investigació i desenvolupament dels sectors públic i priva

    Analysis and optimization of the hardware design of a sic mosfet based power converter with sic schottky diodes utilizing a split output topology

    Get PDF
    In recent years, the use of power electronic devices for energy conversion with semiconductors such as silicon carbide (SiC) or gallium nitride (GaN) are replacing silicon due to their high thermal conductivity, efficiency, resistance, and the possibility of smaller and thinner designs. For this reason, in order to evaluate the improvement potential of these systems, it is beneficial to realize experimental setups that emulate real operating conditions in order to verify the correct performance of these systems. In this context and based on the previous work done by Giorgio Ferrara, this thesis focuses on the analysis and identification of improvements of a SiC MOSFET-based power electronic converter with the aim of suggesting and studying different solutions that ensure a high-performance operation that allows its correct implementation in motor traction and grid-connected applications. During the thesis work, it is carried out an in-depth analysis of the voltage peaks between drain and source originated by the fast switching of the MOSFET to evaluate the use of Snubber capacitors and it is made a new hardware design of the gate driver board using isolated gate drivers to improve the dynamic behaviour in the switching transients of the SiC transistors and provide safety and robustness to the system. Finally, maintaining the original design of the converter, it implements the split output topology to evaluate possible solutions to the problems of electromagnetic interference (EMI) and the crosstalk effect that occurs with high frequency switchingNegli ultimi anni, l'uso di dispositivi elettronici di potenza per la conversione dell'energia con semiconduttori come il carburo di silicio (SiC) o il nitruro di gallio (GaN) sta sostituendo il silicio grazie alla sua elevata conducibilità termica, all'efficienza, alla resistenza e alla possibilità di realizzare disegni più piccoli e sottili. Per questo motivo, al fine di valutare il potenziale di miglioramento di questi sistemi, è utile realizzare set-up sperimentali che emulino le condizioni operative reali, in modo da poter eseguire diversi test per verificare il corretto comportamento di questi sistemi. In tale contesto e a partire dal precedente lavoro effettuato per Giorgio Ferrara, la presente tesi si concentra nell' analisi e nidentificazione di miglioramenti di un convertitore di potenza DC-AC a commutazione, al fine di proporre e studiare diverse soluzioni che garantiscano le elevate prestazioni che assicurano la sua corretta implementazione in applicazioni di trazione a motore e di connessione alla rete. Durante il lavoro di tesi, si analizza in dettaglio il fenomeno di picchi di tensione tra drain e source causato per la commutazione veloce del MOSFET e si valuta l'utilizzo di condensatori snubber; in più si realizza un nuovo disegno hardware della board di gate driver utilizzando gate driver isolati per migliorare il comportamento dinamico nei transitori di commutazione dei transistor SiC e per fornire sicurezza e robustezza al sistema. Per finire, mantenendo il disegno originale del convertitore, implementa la topologia di uscita Split Output per valutare possibili soluzioni ai problemi di interferenza elettromagnetica (EMI) e all'effetto diafonia che si produce con la commutazione ad alta frequenzaObjectius de Desenvolupament Sostenible::9 - Indústria, Innovació i Infraestructura::9.5 - Augmentar la investigació científica i millorar la capacitat tecnològica dels sectors industrials de tots els països, en particular els països en desenvolupament, entre d’altres maneres fomentant la innovació i augmentant substancialment, d’aquí al 2030, el nombre de persones que treballen en el camp de la investigació i el desenvolupa­ment per cada milió d’habitants, així com la despesa en investigació i desenvolupament dels sectors públic i priva

    Developing power semiconductor device model for virtual prototyping of power electronics systems

    Get PDF
    Virtual prototyping (VP) is very important for power electronics systems design. A virtual prototyping design tool based on different modelling technology and model order reduction is proposed in the paper. In order to combine circuit electromagnetic model with power semiconductor device models, a SiC-JFET behavioural model is presented and implemented in the design tool. A half bridge circuit using SiC-JFET devices is thus represented in the VP software. The presented SiC-JFET behavioural model is then validated by comparing with experimental measurements on switching waveforms

    Modeling and Optimization Algorithm for SiC-based Three-phase Motor Drive System

    Get PDF
    More electric aircraft (MEA) and electrified aircraft propulsion (EAP) becomes the important topics in the area of transportation electrifications, expecting remarkable environmental and economic benefits. However, they bring the urgent challenges for the power electronics design since the new power architecture in the electrified aircraft requires many benchmark designs and comparisons. Also, a large number of power electronics converter designs with different specifications and system-level configurations need to be conducted in MEA and EAP, which demands huge design efforts and costs. Moreover, the long debugging and testing process increases the time to market because of gaps between the paper design and implementation. To address these issues, this dissertation covers the modeling and optimization algorithms for SiC-based three-phase motor drive systems in aviation applications. The improved models can help reduce the gaps between the paper design and implementation, and the implemented optimization algorithms can reduce the required execution time of the design program. The models related to magnetic core based inductors, geometry layouts, switching behaviors, device loss, and cooling design have been explored and improved, and several modeling techniques like analytical, numerical, and curve-fitting methods are applied. With the developed models, more physics characteristics of power electronics components are incorporated, and the design accuracy can be improved. To improve the design efficiency and to reduce the design time, optimization schemes for the filter design, device selection combined with cooling design, and system-level optimization are studied and implemented. For filter design, two optimization schemes including Ap based weight prediction and particle swarm optimization are adopted to reduce searching efforts. For device selection and related cooling design, a design iteration considering practical layouts and switching speed is proposed. For system-level optimization, the design algorithm enables the evaluation of different topologies, modulation schemes, switching frequencies, filter configurations, cooling methods, and paralleled converter structure. To reduce the execution time of system-level optimization, a switching function based simulation and waveform synthesis method are adopted. Furthermore, combined with the concept of design automation, software integrated with the developed models, optimization algorithms, and simulations is developed to enable visualization of the design configurations, database management, and design results
    • …
    corecore