Physical Investigation into Effective Voltage Balancing by Temporary Clamp Technique for the Series Connection of IGBTs

The series connection of IGBTs is essential for high-voltage applications where fast switching performances need to be maintained. However, unbalanced voltage sharing is a major resistance to the converter application of this structure. There are a number of causes leading to voltage unbalance, such as different signal delays, parasitic parameters, tail currents, and so on. A temporary clamp scheme performed by active voltage control (AVC) has been proven to be effective in solving the unbalanced voltage-sharing issue. However, the basic physics has not been investigated. In this paper, the physical principle of voltage unbalance within IGBTs series operation is discussed. The carrier storage region differences are concluded to be the intrinsic cause of unbalanced voltage sharing. By using an accurate Fourier-series-based IGBT simulation model with appropriate assumptions, a physical explanation for temporary clamp is provided in detail. At the end of the tail current period when the excess carrier concentration becomes close to the intrinsic doping density, the temporary clamp is able to achieve satisfactory equal voltage sharing

Investigation of FACTS devices to improve power quality in distribution networks

Flexible AC transmission system (FACTS) technologies are power electronic solutions that improve power transmission through enhanced power transfer volume and stability, and resolve quality and reliability issues in distribution networks carrying sensitive equipment and non-linear loads. The use of FACTS in distribution systems is still in its infancy. Voltages and power ratings in distribution networks are at a level where realistic FACTS devices can be deployed. Efficient power converters and therefore loss minimisation are crucial prerequisites for deployment of FACTS devices. This thesis investigates high power semiconductor device losses in detail. Analytical closed form equations are developed for conduction loss in power devices as a function of device ratings and operating conditions. These formulae have been shown to predict losses very accurately, in line with manufacturer data. The developed formulae enable circuit designers to quickly estimate circuit losses and determine the sensitivity of those losses to device voltage and current ratings, and thus select the optimal semiconductor device for a specific application. It is shown that in the case of majority carrier devices (such as power MOSFETs), the conduction power loss (at rated current) increases linearly in relation to the varying rated current (at constant blocking voltage), but is a square root of the variable blocking voltage when rated current is fixed. For minority carrier devices (such as a pin diode or IGBT), a similar relationship is observed for varying current, however where the blocking voltage is altered, power losses are derived as a square root with an offset (from the origin). Finally, this thesis conducts a power loss-oriented evaluation of cascade type multilevel converters suited to reactive power compensation in 11kV and 33kV systems. The cascade cell converter is constructed from a series arrangement of cell modules. Two prospective structures of cascade type converters were compared as a case study: the traditional type which uses equal-sized cells in its chain, and a second with a ternary relationship between its dc-link voltages. Modelling (at 81 and 27 levels) was carried out under steady state conditions, with simplified models based on the switching function and using standard circuit simulators. A detailed survey of non punch through (NPT) and punch through (PT) IGBTs was completed for the purpose of designing the two cascaded converters. Results show that conduction losses are dominant in both types of converters in NPT and PT IGBTs for 11kV and 33kV systems. The equal-sized converter is only likely to be useful in one case (27-levels in the 33kV system). The ternary-sequence converter produces lower losses in all other cases, and this is especially noticeable for the 81-level converter operating in an 11kV network

Stacking of IGBT devices for fast high-voltage high-current applications

The development of solid-state switches for pulsed power applications has been of considerable interest since high-power semiconductor devices became available. However, the use of solid-state devices in the pulsed power environment has usually been restricted by device limitations in either their voltage/current ratings or their switching speed. The stacking of fast medium-voltage devices, such as IGBTs, to improve the voltage rating, makes solid-state switches a potential substitute for conventional switches such as hard glass tubes, thyratrons and spark gaps. Previous studies into stacking IGBTs have been concerned with specific devices, designed or modified particularly for a specific application. The present study is concerned with stacking fast and commercially available IGBTs and their application to the generation of pulsed electric field and the switching of a high intensity Xenon flashlamp. The aim of the first section of the present study was to investigate different solid-state switching devices with a stacking capability and this led to the choice of the Insulated Gate Bipolar Transistor (IGBT). It was found that the collector-emitter voltage decreases in two stages in most of the available IGBTs. Experiments and simulation showed that a reason for this behaviour could be fast variations in device parasitic parameters particularly gate-collector capacitance. Choosing the proper IGBT, as well as dealing with problems such as unbalanced voltage and current sharing, are important aspects of stacking and these were reported in this study. Dynamic and steady state voltage imbalances caused by gate driver delay was controlled using an array of synchronised pulses, isolated with magnetic and optical coupling. The design procedure for pulse transformers, optical modules, the drive circuits required to minimise possible jitter and time delays, and over-voltage protection of IGBT modules are also important aspects of stacking, and were reported in this study. The second purpose of this study was to investigate the switching performance of both magnetically coupled and optically coupled stacks, in pulse power applications such as Pulse Electric Field (PEF) inactivation of microorganisms and UV light inactivation of food-related pathogenic bacteria. The stack, consisting of 50 1.2 kV IGBTs with the voltage and current capabilities of 10 kV, 400 A, was incorporated into a coaxial cable Blumlein type pulse - generator and its performance was successfully tested with both magnetic and optical coupling. As a second application of the switch, a fully integrated solid-state Marx generator was designed and assembled to drive a UV flashlamp for the purpose of microbiological inactivation. The generator has an output voltage rating of 3 kV and a peak current rating of 2 kA, although the modular approach taken allows for a number of voltage and current ratings to be achieved. The performance of the switch was successfully tested over a period of more than 10⁶ pulses when it was applied to pulse a xenon flashlamp.The development of solid-state switches for pulsed power applications has been of considerable interest since high-power semiconductor devices became available. However, the use of solid-state devices in the pulsed power environment has usually been restricted by device limitations in either their voltage/current ratings or their switching speed. The stacking of fast medium-voltage devices, such as IGBTs, to improve the voltage rating, makes solid-state switches a potential substitute for conventional switches such as hard glass tubes, thyratrons and spark gaps. Previous studies into stacking IGBTs have been concerned with specific devices, designed or modified particularly for a specific application. The present study is concerned with stacking fast and commercially available IGBTs and their application to the generation of pulsed electric field and the switching of a high intensity Xenon flashlamp. The aim of the first section of the present study was to investigate different solid-state switching devices with a stacking capability and this led to the choice of the Insulated Gate Bipolar Transistor (IGBT). It was found that the collector-emitter voltage decreases in two stages in most of the available IGBTs. Experiments and simulation showed that a reason for this behaviour could be fast variations in device parasitic parameters particularly gate-collector capacitance. Choosing the proper IGBT, as well as dealing with problems such as unbalanced voltage and current sharing, are important aspects of stacking and these were reported in this study. Dynamic and steady state voltage imbalances caused by gate driver delay was controlled using an array of synchronised pulses, isolated with magnetic and optical coupling. The design procedure for pulse transformers, optical modules, the drive circuits required to minimise possible jitter and time delays, and over-voltage protection of IGBT modules are also important aspects of stacking, and were reported in this study. The second purpose of this study was to investigate the switching performance of both magnetically coupled and optically coupled stacks, in pulse power applications such as Pulse Electric Field (PEF) inactivation of microorganisms and UV light inactivation of food-related pathogenic bacteria. The stack, consisting of 50 1.2 kV IGBTs with the voltage and current capabilities of 10 kV, 400 A, was incorporated into a coaxial cable Blumlein type pulse - generator and its performance was successfully tested with both magnetic and optical coupling. As a second application of the switch, a fully integrated solid-state Marx generator was designed and assembled to drive a UV flashlamp for the purpose of microbiological inactivation. The generator has an output voltage rating of 3 kV and a peak current rating of 2 kA, although the modular approach taken allows for a number of voltage and current ratings to be achieved. The performance of the switch was successfully tested over a period of more than 10⁶ pulses when it was applied to pulse a xenon flashlamp

A Transformerless PCB Based Medium-Voltage Multilevel Power Converter with A DC Capacitor Balancing Circuit and Algorithm

This dissertation presents a new method of constructing a transformerless, voltage-sourced, medium-voltage multilevel converter using existing discrete power semiconductor devices and printed circuit board technology. While the approach is general, it is particularly well-suited for medium-voltage converters and motor-drives in the 4.16 kV, 500 - 1000 kW range. A novel way of visualizing the power stage topology is developed which allows simplified mechanical layouts while managing the commutation paths. Using so many discrete devices typically drives cost and complexity of the gate-drive system including its control and isolation; a gate-drive circuit is presented to address this problem. As with most multilevel topologies, the dc-link voltages must be balanced during operation. This is accomplished using an auxiliary circuit made up of the same power stage and an associated control algorithm. Experimental results are presented for a 4.16 kV, 746 kW, five-level power converter prototype. This dissertation also analyzes a new capacitor voltage-balancing converter along with a novel capacitor voltage balancing control algorithm. Analysis of the inverter system provides a new description of capacitor voltage stability as a function of system operating conditions

Operation and control of an HVDC circuit breaker with current flow control capability

Deployment of dc circuit breakers (DCCBs) will help to isolate dc faults in dc systems. Conversely, current flow controllers (CFCs) will be employed in dc grids to balance currents among transmission lines. However, the inclusion of these devices may incur significant capital investment. A way to reduce costs is by integrating current control capabilities into DCCBs. This paper presents a new device, the CB/CFC, which combines a multi-line DCCB with a half-bridge based CFC. The operating principles of the device are analyzed and its operating modes are classified. A level-shift modulation method ensuring that a single bridge of the CB/CFC is modulated for each operating mode is considered. This simplifies the control scheme for CFC operation. For completeness, the CB/CFC is compared with other alternatives available in the literature. It is shown that the presented device reduces the number of semiconductor components compared to other solutions. DC fault isolation and current flow control are verified through simulations conducted in PSCAD

DC/DC converter for offshore DC collection network

Large wind farms, especially large offshore wind farms, present a challenge for the electrical networks that will provide interconnection of turbines and onward transmission to the onshore power network. High wind farm capacity combined with a move to larger wind turbines will result in a large geographical footprint requiring a substantial sub-sea power network to provide internal interconnection. While advanced HVDC transmission has addressed the issue of long-distance transmission, internal wind farm power networks have seen relatively little innovation. Recent studies have highlighted the potential benefits of DC collection networks. First with appropriate selection of DC voltage, reduced losses can be expected. In addition, the size and weight of the electrical plant may also be reduced through the use of medium- or high-frequency transformers to step up the generator output voltage for connection to a medium-voltage network suitable for wide-area interconnection. However, achieving DC/DC conversion at the required voltage and power levels presents a significant challenge for wind-turbine power electronics.This thesis first proposes a modular DC/DC converter with input-parallel output-series connection, consisting of full-bridge DC/DC modules. A new master-slave control scheme is developed to ensure power sharing under all operating conditions, including during failure of a master module by allowing the status of master module to be reallocated to another healthy module. Secondly, a novel modular DC/DC converter with input-series-input-parallel output-series connection is presented. In addition, a robust control scheme is developed to ensure power sharing between practical modules even where modules have mismatched parameters or when there is a faulted module. Further, the control strategy is able to isolate faulted modules to ensure fault ride-through during internal module faults, whilst maintaining good transient performance. The ISIPOS connection is then applied to a converter with bidirectional power flow capability, realised using dual-active bridge modules.The small- and large-signal analyses of the proposed converters are performed in order to deduce the control structure for the converter input and output stages. Simulation and experimental results demonstrate and validate the proposed converters and associated control schemes.Large wind farms, especially large offshore wind farms, present a challenge for the electrical networks that will provide interconnection of turbines and onward transmission to the onshore power network. High wind farm capacity combined with a move to larger wind turbines will result in a large geographical footprint requiring a substantial sub-sea power network to provide internal interconnection. While advanced HVDC transmission has addressed the issue of long-distance transmission, internal wind farm power networks have seen relatively little innovation. Recent studies have highlighted the potential benefits of DC collection networks. First with appropriate selection of DC voltage, reduced losses can be expected. In addition, the size and weight of the electrical plant may also be reduced through the use of medium- or high-frequency transformers to step up the generator output voltage for connection to a medium-voltage network suitable for wide-area interconnection. However, achieving DC/DC conversion at the required voltage and power levels presents a significant challenge for wind-turbine power electronics.This thesis first proposes a modular DC/DC converter with input-parallel output-series connection, consisting of full-bridge DC/DC modules. A new master-slave control scheme is developed to ensure power sharing under all operating conditions, including during failure of a master module by allowing the status of master module to be reallocated to another healthy module. Secondly, a novel modular DC/DC converter with input-series-input-parallel output-series connection is presented. In addition, a robust control scheme is developed to ensure power sharing between practical modules even where modules have mismatched parameters or when there is a faulted module. Further, the control strategy is able to isolate faulted modules to ensure fault ride-through during internal module faults, whilst maintaining good transient performance. The ISIPOS connection is then applied to a converter with bidirectional power flow capability, realised using dual-active bridge modules.The small- and large-signal analyses of the proposed converters are performed in order to deduce the control structure for the converter input and output stages. Simulation and experimental results demonstrate and validate the proposed converters and associated control schemes

Health Condition Monitoring and Fault-Tolerant Operation of Adjustable Speed Drives

Adjustable speed drives (ASDs) have been extensively used in industrial applications over the past few decades because of their benefits of energy saving and control flexibilities. However, the wider penetration of ASD systems into industrial applications is hindered by the lack of health monitoring and fault-tolerant operation techniques, especially in safety-critical applications. In this dissertation, a comprehensive portfolio of health condition monitoring and fault-tolerant operation strategies is developed and implemented for multilevel neutral-point-clamped (NPC) power converters in ASDs. Simulations and experiments show that these techniques can improve power cycling lifetime of power transistors, on-line diagnosis of switch faults, and fault-tolerant capabilities.The first contribution of this dissertation is the development of a lifetime improvement Pulse Width Modulation (PWM) method which can significantly extend the power cycling lifetime of Insulated Gate Bipolar Transistors (IGBTs) in NPC inverters operating at low frequencies. This PWM method is achieved by injecting a zero-sequence signal with a frequency higher than that of the IGBT junction-to-case thermal time constants. This, in turn, lowers IGBT junction temperatures at low output frequencies. Thermal models, simulation and experimental verifications are carried out to confirm the effectiveness of this PWM method. As a second contribution of this dissertation, a novel on-line diagnostic method is developed for electronic switch faults in power converters. Targeted at three-level NPC converters, this diagnostic method can diagnose any IGBT faults by utilizing the information on the dc-bus neutral-point current and switching states. This diagnostic method only requires one additional current sensor for sensing the neutral-point current. Simulation and experimental results verified the efficacy of this diagnostic method.The third contribution consists of the development and implementation of a fault-tolerant topology for T-Type NPC power converters. In this fault-tolerant topology, one additional phase leg is added to the original T-Type NPC converter. In addition to providing a fault-tolerant solution to certain switch faults in the converter, this fault-tolerant topology can share the overload current with the original phase legs, thus increasing the overload capabilities of the power converters. A lab-scale 30-kVA ASD based on this proposed topology is implemented and the experimental results verified its benefits

Series connection of power semiconductors for medium voltage applications

The series connection of power semiconductor devices allows the operation at voltage levels higher than the levels allowed by one single semiconductor. However, due to individual parameter differences of the series connected devices it is difficult to ensure a proper voltage balance between the series connected power devices and if any semiconductor exceeds its maximum blocking voltage it will fail. Because of its gate controllability and its low gate energy requirements, the IGBT is the preferred choice when high number of switching devices must be connected in series. In this research work an IGBT gate driver has been developed which will control the behaviour of the IGBT during the switching process. In consequence, this gate driver should ensure a proper voltage balance between the series connected IGBT devices. Basically, this PhD research work deals with the analysis and the modelling of the behaviour of the IGBT / Diode, proposes an active gate control and shows its validity for the series connection of IGBT / Diode devices. Finally, voltage source converter topologies are briefly compared for reactive power compensation applications at Medium Voltage utility grids. The required blocking voltage capacity is achieved by means of the series connection of power semiconductor devices.La conexión en serie de semiconductores de potencia permite trabajar a tensiones de trabajo superiores a las que podría soportar un único semiconductor. Sin embargo, debido a diferencias en las características de los propios semiconductores es difícil garantizar el equilibrado adecuado de las tensiones de trabajo entre los distintos semiconductores conectados en serie. Si algún semiconductor supera su máxima tensión de trabajo este fallará. Debido a su controlabilidad y bajo requerimiento energético por puerta el IGBT es la opción preferida cuando se requiere la conexión en serie de gran cantidad de semiconductores. En este trabajo de investigación se ha desarrollado un driver para IGBT que permita el control del proceso de conmutación del IGBT y garantice el equilibrado de las tensiones entre los IGBTs conectados en serie. Básicamente, en este trabajo de investigación se presenta el análisis y modelado del comportamiento del IGBT/Diodo, el control activo empleado para controlar el proceso de conmutación del IGBT y su validez para la conextión en serie. Finalmente, se presenta una pequeña comparación de convertidores de fuente de tensión para aplicaciones de compensación de energía reactiva conectados directamente a redes de Media Tensión. La capacidad de bloqueo requerida se obtiene mediante la conexión en serie de semiconductores de potencia.Potentzi erdi eroaleen serie elkarketak, erdi eroale batek jasan dezakeena baino tentsio maila altuagoan lan egitea ahalbideratzen du. Hala ere, erdi eroaleen arteko ezaugarri ezberditasunak direla eta, zaila egiten da tentsio banaketa egokia zihurtatzea. Erdi eroaleetariko batek bere gehienezko tentsio maila gainditzen badu honek huts egingo du. Erdi eroale asko seriean elkartu behar direnean IGBT-a izaten da aukerarik hobetsiena bere kontrolagarritasuna eta behar duen ateko energia maila baxua dela eta. Ikerketa lan honetan IGBT baten ateko “driver”-a garatu da. Honek IGBT-aren konmutazio prozesua kontrolatu behar du eta aldi berean, seriean elkarturiko IGBT-en artean, tentsio banaketa egokia lortu. Funtsean, ikerketa lan honetan IGBT eta Diodo-aren analisia eta modelatua erakusten dira. Modu berean “driver”-ean erabilitako kontrola eta bere baliozkotasuna IGBT/Diodo-en serie elkarketarako erakusten dira. Azkenik, Tentsio Ertaineko sarera zuzenean konektaturiko Tentsio Iturri Bihurgailuen arteko konparaketa bat egin da. Sareko tentsio maila altua dela eta erdi eroaleen serie elkarketa derrigorrezkoa da