In situ generation of silver nanoparticles in PVDF for the development of resistive switching devices

It is widely accepted that resistive switching devices (RSDs) are extremely appealing as active components in computer memories and logic gates in electronics, directly enabling neuromorphic functionalities. The aim of this study is to investigate the chemical and electrical properties of a nanocomposite polymer, the active component of the device, in order to characterise its composition and behaviour under electric field. This paper presents the morphological and chemical characterization of an in-situ generated silver – Polyvinylidene fluoride-hexafluoropropylene PVDF-HFP nanocomposite (NC) material. A silver salt is added as precursor to the polymer solution and then, after a film casting step, the nanoparticles generation and growth processes are carried out by way of UV irradiation; the growth and the distribution of in-situ generated silver nanoparticles (NPs) in the polymer matrix are described. The devices, built on a planar electrode structure, undergo an I/V test to explore their resistance states at different switching voltages. Furthermore, after electrical analysis a remarkable R off /R on ratio and a relatively low switching voltage (3 V) are achieved, demonstrating the suitability of the developed material for the next generation of soft, wearable, RSDs

Reliable current changes with selectivity ratio above 10(9) observed in lightly doped zinc oxide films

Low-power operation of semiconductor devices is crucial for energy conservation. In particular, energy-efficient devices are essential in portable electronic devices to allow for extended use with a limited power supply. However, unnecessary currents always exist in semiconductor devices, even when the device is in its off state. To solve this problem, it is necessary to use switch devices that can turn active devices on and off effectively. For this purpose, high on/off current selectivity with ultra-low off-current and high on-current is required. Here, we report a novel switch behavior with over 10(9) selectivity, a high on-current density of 1 MA cm(-2), an ultra-low off-current density of 1 mA cm(-2), excellent thermal stability up to 250 degrees C and abrupt turn-on with 5 mV per decade in solution-processed silver-doped zinc oxide thin films. The selection behavior is attributed to light doping of silver ions in zinc oxide films during electrochemical deposition to generate atomic-scale narrow conduction paths, which can be formed and ruptured at low voltages. Device simulation showed that the new selector devices may be used in ultra-high-density memory devices to provide excellent operation margins and extremely low power consumption.1110Ysciescopu

Nanoscale resistive switching memory devices: a review

In this review the different concepts of nanoscale resistive switching memory devices are described and classified according to their I–V behaviour and the underlying physical switching mechanisms. By means of the most important representative devices, the current state of electrical performance characteristics is illuminated in-depth. Moreover, the ability of resistive switching devices to be integrated into state-of-the-art CMOS circuits under the additional consideration with a suitable selector device for memory array operation is assessed. From this analysis, and by factoring in the maturity of the different concepts, a ranking methodology for application of the nanoscale resistive switching memory devices in the memory landscape is derived. Finally, the suitability of the different device concepts for beyond pure memory applications, such as brain inspired and neuromorphic computational or logic in memory applications that strive to overcome the vanNeumann bottleneck, is discussed

Anatomy of Ag/Hafnia‐Based Selectors with 1010 Nonlinearity

Sneak path current is a significant remaining obstacle to the utilization of large crossbar arrays for non-volatile memories and other applications of memristors. A two-terminal selector device with an extremely large current-voltage nonlinearity and low leakage current could solve this problem. We present here a Ag/oxide-based threshold switching (TS) device with attractive features such as high current-voltage nonlinearity (~1010 ), steep turn-on slope (less than 1 mV/dec), low OFF-state leakage current (~10-14 A), fast turn ON/OFF speeds (108 cycles). The feasibility of using this selector with a typical memristor has been demonstrated by physically integrating them into a multilayered 1S1R cell. Structural analysis of the nanoscale crosspoint device suggests that elongation of a Ag nanoparticle under voltage bias followed by spontaneous reformation of a more spherical shape after power off is responsible for the observed threshold switching of the device. Such mechanism has been quantitatively verified by the Ag nanoparticle dynamics simulation based on thermal diffusion assisted by bipolar electrode effect and interfacial energy minimization

Memory window engineering of Ta2O5-x oxide-based resistive switches via incorporation of various insulating frames

Three-dimensional (3D) stackable memory frames, including nano-scaled crossbar arrays, are one of the most reliable building blocks to meet the demand of high-density non-volatile memory electronics. However, their utilization has the disadvantage of introducing issues related to sneak paths, which can negatively impact device performance. We address the enhancement of complementary resistive switching (CRS) features via the incorporation of insulating frames as a generic approach to extend their use; here, a Pt/Ta2O5-x/Ta/Ta2O5-x/Pt frame is chosen as the basic CRS cell. The incorporation of Ta/Ta2O5-x/Ta or Pt/amorphous TaN/Pt insulting frames into the basic CRS cell ensures the appreciably advanced memory features of CRS cells including higher on/off ratios, improved read margins, and increased selectivity without reliability degradation. Experimental observations identified that a suitable insulating frame is crucial for adjusting the abrupt reset events of the switching element, thereby facilitating the enhanced electrical characteristics of CRS cells that are suitable for practical applications.This research was supported by a grant from the National Research Foundation of Korea (NRF), Development of neuromorphic neuron device and system based on nano-electronic devices technology

Low Thermal Conductivity Phase Change Memory Superlattices

Phase change memory devices are typically reset by melt-quenching a material to radically lower its electrical conductance. The high power and concomitantly high current density required to reset phase change materials is the major issue that limits the access times of 3D phase change memory architectures. Phase change superlattices were developed to lower the reset energy by confining the phase transition to the interface between two different phase change materials. However, the high thermal conductivity of the superlattices means that heat is poorly confined within the phase change material, and most of the thermal energy is wasted to the surrounding materials. Here, we identified Ti as a useful dopant for substantially lowering the thermal conductivity of Sb2Te3-GeTe superlattices whilst also stabilising the layered structure from unwanted disordering. We demonstrate via laser heating that lowering the thermal conductivity by doping the Sb2Te3 layers with Ti halves the switching energy compared to superlattices that only use interfacial phase change transitions and strain engineering. The thermally optimized superlattice has (0 0 l) crystallographic orientation yet a thermal conductivity of just 0.25 W/m.K in the "on" (set) state. Prototype phase change memory devices that incorporate this Ti-doped superlattice switch faster and and at a substantially lower voltage than the undoped superlattice. During switching the Ti-doped Sb2Te3 layers remain stable within the superlattice and only the Ge atoms are active and undergo interfacial phase transitions. In conclusion, we show the potential of thermally optimised Sb2Te3-GeTe superlattices for a new generation of energy-efficient electrical and optical phase change memory.Comment: 4 Figures, 7 Supplementary Figures, 27 pages including a supplemen

UNDERSTANDING MEMRISTORS AND SELECTORS FOR FUTURE STORAGE AND COMPUTING APPLICATIONS: MODELING AND ANALYSIS

The memristor and selector devices are the most promising candidates in the research of emerging memory technologies and neuromorphic computing applications. To understand the device properties and guide for future applications, models for those devices based on physical mechanisms are essential. We developed models for two popular memristors and a selector. We developed a SPICE-compatible compact model of TiO2-TiO2-x memristors based on classic ion transportation theory. Our model is shown to simulate important dynamic memristive properties like real-time memristance switching, which are critical in memristor-based analog circuit designs. The model, as well as its analytical approximation, is validated with the experimentally obtained data from real devices. Minor deviations of our model from the measured data are also analyzed and discussed. We illustrate a heuristic two-state-variable memristor model of charged O vacancy drift resistive switches that includes the effects of internal Joule heating on both the electronic transport and the drift velocity (i.e. switching speed) of vacancies in the switching material. The dynamical state variables correspond to the cross-sectional area of a conducting channel in the device and the gap between the end of the channel and one of the electrodes. The model was calibrated against low voltage pulse-sweep and state-test data collected from a TaOx memristor so that the contributions of the channel gap, area and temperature to switching can be analyzed. The model agrees well with experimental results for long switching times and low-to-intermediate voltage operation. A selector device that demonstrates high nonlinearity, low switching voltage and volatility was fabricated using HfOx materials with Ag electrodes. The electronic conductance of such volatile selector device was studied under both static and dynamic conditions, with DC and AC measurements respectively. From experimental observations, a compact model is developed in this study to illustrate the physical process of the formation and dissipation of Ag filament for electron transport through the device. A dynamic capacitance model is used to fit the transient current traces under different voltage bias through the device and allow the extraction of parameters associated with the various parasitic components in the device