An approach to harmonic load- and source-pull measurements for high-efficiency PA design

High-efficiency power-amplifier design requires numerous efforts to investigate both input and output harmonic terminations effects. A simplified theoretical approach to clarify the relevance of such terminations is presented here, and design criteria to improve efficiency for high-frequency applications are briefly discussed. An advanced active load/source-pull test-bench has been used to validate theoretical harmonic tuning techniques, characterizing an active device. The adopted optimization strategy is presented, together with measured results obtained with a medium-power 1-mm MESFET at 1 GHz. Input second harmonic impedances effects are stressed, showing a drain efficiency spread between 37%-49% for a fixed input power level, corresponding to 1-dB compression. Finally, as predicted by the presented theory, after input second harmonic tuning, further improvements are obtained, increasing fundamental output load resistive part, demonstrating an additional drain efficiency enhancement, which reaches a level of 55% at 1-dB compression

Modeling Based on Elman Wavelet Neural Network for Class-D Power Amplifiers

In Class-D Power Amplifiers (CDPAs), the power supply noise can intermodulate with the input signal, manifesting into power-supply induced intermodulation distortion (PS-IMD) and due to the memory effects of the system, there exist asymmetries in the PS-IMDs. In this paper, a new behavioral modeling based on the Elman Wavelet Neural Network (EWNN) is proposed to study the nonlinear distortion of the CDPAs. In EWNN model, the Morlet wavelet functions are employed as the activation function and there is a normalized operation in the hidden layer, the modification of the scale factor and translation factor in the wavelet functions are ignored to avoid the fluctuations of the error curves. When there are 30 neurons in the hidden layer, to achieve the same square sum error (SSE) $\epsilon_{min}=10^{-3}$, EWNN needs 31 iteration steps, while the basic Elman neural network (BENN) model needs 86 steps. The Volterra-Laguerre model has 605 parameters to be estimated but still can't achieve the same magnitude accuracy of EWNN. Simulation results show that the proposed approach of EWNN model has fewer parameters and higher accuracy than the Volterra-Laguerre model and its convergence rate is much faster than the BENN model

When self-consistency makes a difference

Compound semiconductor power RF and microwave device modeling requires, in many cases, the use of selfconsistent electrothermal equivalent circuits. The slow thermal dynamics and the thermal nonlinearity should be accurately included in the model; otherwise, some response features subtly related to the detailed frequency behavior of the slow thermal dynamics would be inaccurately reproduced or completely distorted. In this contribution we show two examples, concerning current collapse in HBTs and modeling of IMPs in GaN HEMTs. Accurate thermal modeling is proved to be be made compatible with circuit-oriented CAD tools through a proper choice of system-level approximations; in the discussion we exploit a Wiener approach, but of course the strategy should be tailored to the specific problem under consideratio

A Comprehensive Mixed-Mode Time-Domain Load- and Source-Pull Measurement System

We present a novel test set devised for nonlinear balanced device characterization using load-pull techniques. The system is capable of measuring the voltage and current waveforms at the calibration reference planes while independently tuning the device under test (DUT) source and load differential- and common-mode terminations. The test set is designed to address present and future large-signal multiport measurement needs, easing the characterization task while developing new multiport active device

Design and Development of a Class EF2 Inverter and Rectifier for Multi-megahertz Wireless Power Transfer Systems

This paper presents the design and implementation of a Class EF2 inverter and Class EF2 rectifier for two -W wireless power transfer (WPT) systems, one operating at 6.78 MHz and the other at 27.12 MHz. It will be shown that the Class EF2 circuits can be designed to have beneficial features for WPT applications such as reduced second-harmonic component and lower total harmonic distortion, higher power-output capability, reduction in magnetic core requirements and operation at higher frequencies in rectification compared to other circuit topologies. A model will first be presented to analyze the circuits and to derive values of its components to achieve optimum switching operation. Additional analysis regarding harmonic content, magnetic core requirements and open-circuit protection will also be performed. The design and implementation process of the two Class-EF2-based WPT systems will be discussed and compared to an equivalent Class-E-based WPT system. Experimental results will be provided to confirm validity of the analysis. A dc-dc efficiency of 75% was achieved with Class-EF2-based systems

L-Band Solid State Power Amplifier for space applications

This thesis was carried out in the electrical engineering department at the Communications Division of the company SENER Aeroespacial. Due to the increasing demand of GaN Solid State Power Amplifiers (SSPA) for space applications, an internal R+D project was promoted by the company to overcome the key challanges to implement GaN technology in space-qualified power amplifiers by combining the SENER Aeroespacial multi-disciplinary expertise including, RF design, mechanical-thermal design, manufacturing and quality. Among all the cited disciplines, this thesis is focused particularly on the part corresponding to the SSPA RF design and characterization. Complete product design and development is proposed from a GaN power MMIC transistor in die format to the manufacturing of the representative prototypes. Test validation of the prototypes is performed in the Clean Room using RF instruments, then, based on the initial results, correlation of the measurement and simulation is performed to correct and validate the simulation models considered initially

Analysis and elimination of hysteresis and noisy precursors in power amplifiers

Power amplifiers (PAs) often exhibit instabilities leading to frequency division by two or oscillations at incommensurate frequencies. This undesired behavior can be detected through a large-signal stability analysis of the solution. However, other commonly observed phenomena are still difficult to predict and eliminate. In this paper, the anomalous behavior observed in a Class-E PA is analyzed in detail. It involves hysteresis in the power-transfer curve, oscillation, and noisy precursors. The precursors are pronounced bumps in the power spectrum due to noise amplification under a small stability margin. The correction of the amplifier performance has required the development of a new technique for the elimination of the hysteresis. Instead of a trial-and-error procedure, this technique, of general application to circuit design, makes use of bifurcation concepts to suppress the hysteresis phenomenon through a single simulation on harmonic-balance software. Another objective has been the investigation of the circuit characteristics that make the noisy precursors observable in practical circuits and a technique has been derived for their elimination from the amplifier output spectrum. All the different techniques have been experimentally validated

Innovative Theoretical Approaches Used for RF Power Amplifiers in Modern HDTV Systems

The essential purpose of this chapter is to introduce theoretical and numerical approaches that can be used for modeling nonlinear effects that appear intrinsically in the design of power amplifiers that have been used widely in many modern high-density television (HDTV) architectures. Important effects like the pre-distortion using adaptive techniques, with distinct characteristics like amplitude, phase, and frequency, as well as, their specific nature such as AM/AM, AM/PM, PM/AM, and PM/PM, and constitute one of the main directions of this research. All theoretical and technological approaches have been supported by a consistent set of numerical data performed with one of the most important platform of simulations used in the great area of Radio Frequency (RF) and Microwave structures. As a direct application, we are introducing some efficient processes that can be used for the characterization of RF systems with a set of consistent laboratorial measures that permit us to visualize the effective cost and a complete architecture for the characterization of high-power amplifiers. With the continuous and innovative technological demand that is imposed by the international marketing has a great importance to find versatile systems that are capable of measuring several amplifier characteristics, as gain, output power, inter-modulation distortion of different signals, efficiency, current, and temperature that constitute another direction of research that has been demanded strongly for news advanced technologies used widely in modern HDTV systems

Distributed active transformer - a new power-combining andimpedance-transformation technique

In this paper, we compare the performance of the newly introduced distributed active transformer (DAT) structure to that of conventional on-chip impedance-transformations methods. Their fundamental power-efficiency limitations in the design of high-power fully integrated amplifiers in standard silicon process technologies are analyzed. The DAT is demonstrated to be an efficient impedance-transformation and power-combining method, which combines several low-voltage push-pull amplifiers in series by magnetic coupling. To demonstrate the validity of the new concept, a 2.4-GHz 1.9-W 2-V fully integrated power-amplifier achieving a power-added efficiency of 41% with 50-Ω input and output matching has been fabricated using 0.35-μm CMOS transistor