Receiver front-end circuits and components for millimetre and submillimetre wavelengths

This dissertation focuses on the development of millimetre- and submillimetre-wave receiver front-end circuits and components. Seven scientific articles, written by the author, present this development work. A short introduction to the technology related to the designs of the thesis precedes the articles. The articles comprise several novel structures and techniques intended to further improve the performance of receivers or to provide new ways for receiver circuit implementation, summarised as follows. 1) Novel rectangular waveguide-to-CPW waveguide transition using a probe structure. The measured insertion and return loss of an X-band (8.2-12.4 GHz) back-to-back structure are less than 0.5 dB and more than 17 dB, respectively, over the entire frequency band (fractional bandwidth of > 40 %). The transition is used in a submm-wave mixer. 2) Novel rectangular waveguide-to-CPW transition using a fin-line taper. The measured insertion and return loss of an X-band (8.2-12.4 GHz) back-to-back structure are less than 0.4 dB and more than 16 dB, respectively, over the entire frequency band. 3) Novel tunable waveguide backshort based on a fixed waveguide short and movable dielectric slab. The measured return loss for a W-band backshort is less than 0.21 dB (VSWR > 82) over the entire frequency band of 75-110 GHz. 4) New coaxial bias T. The insertion loss is less than 0.5 dB at 3-16 GHz (fractional bandwidth of 137 %) and 0.1 dB at 5.2-14.1 GHz. In the latter range, the return loss is more than 30 dB. The RF isolation is greater than 30 dB at 1-17 GHz. 5) First millimetre-wave subharmonic waveguide mixer using European quasi-vertical Schottky diodes. The mixer utilises a single diode chip with quartz filters in a four-tuner waveguide housing. A single-sideband noise temperature of 3500 K and conversion loss of 9.2 dB (antenna loss included) have been measured at 215 GHz with an LO power of 3.5 mW. 6) Balanced-type fifth-harmonic submillimetre-wave mixer. It uses two planar Schottky diodes, quartz filters, and a tuner-less in-line waveguide housing with an integrated diagonal horn antenna and new LO transition structure. The designed RF range is 500-700 GHz enabling the use of an LO source at 100-140 GHz. A conversion loss of about 27 dB has been measured at 650 GHz with an LO power of 10 mW. The mixer has been in use in phase locking of a submm-wave signal source. 7) Characterisation procedure of planar Schottky diodes with extensive dc, capacitance, and wide-band (up to 220 GHz) S-parameter measurements and parameter extraction. Parameters of a simple diode equivalent circuit and results of extensive measurements are available for designers and diode manufacturers for further use.reviewe

Sixty-GHz integrated RF head Final report

Integrated 60.8 GHz RF receiver and low noise IF preamplifier developmen

A 275–425-GHz Tunerless Waveguide Receiver Based on AlN-Barrier SIS Technology

We report on a 275–425-GHz tunerless waveguide receiver with a 3.5–8-GHz IF. As the mixing element, we employ a high-current-density Nb–AlN–Nb superconducting–insulating– superconducting (SIS) tunnel junction. Thanks to the combined use of AlN-barrier SIS technology and a broad bandwidth waveguide to thin-film microstrip transition, we are able to achieve an unprecedented 43% instantaneous bandwidth, limited by the receiver's corrugated feedhorn. The measured double-sideband (DSB) receiver noise temperature, uncorrected for optics loss, ranges from 55 K at 275 GHz, 48 K at 345 GHz, to 72 K at 425 GHz. In this frequency range, the mixer has a DSB conversion loss of 2.3 1 dB. The intrinsic mixer noise is found to vary between 17–19 K, of which 9 K is attributed to shot noise associated with leakage current below the gap. To improve reliability, the IF circuit and bias injection are entirely planar by design. The instrument was successfully installed at the Caltech Submillimeter Observatory (CSO), Mauna Kea, HI, in October 2006

Design and Analysis of Substrate-Integrated Cavity-Backed Antenna Arrays for Ku-Band Applications

Mobile communication has become an essential part of our daily life. We love the flexibility of wireless cell phones and even accept their lower quality of service when compared to wired links. Similarly, we are looking forward to the day that we can continue watching our favorite TV programs while travelling anywhere and everywhere. Mobility, flexibility, and portability are the themes of the next generation communication. Motivated and fascinated by such technology breakthroughs, this effort is geared towards enhancing the quality of wireless services and bringing mobile satellite reception one step closer to the market. Meanwhile, phased array antennas are vital components for RADAR applications where the antenna is required to have certain scan capabilities. One of the main concerns in that perspective is how to avoid the potential of scan blindness in the required scan range. Targeting to achieve wide-band wide-scan angle phased arrays free from any scan blindness our efforts is also geared. Conventionally, the key to lower the profile of the antenna is to use planar structures. In that perspective microstrip patch antennas have drawn the attention of antenna engineers since the 1970s due to their attractive features of being low profile, compact size, light weight, and amenable to low-cost PCB fabrication processes. However, patch elements are basically resonating at a single frequency, typically have \u3c2% bandwidth, which is a major deficit that impedes their usage in relatively wide-band applications. There are various approaches to enhance the patch antennas bandwidth including suspended substrates, multi-stack patches, and metalized cavities backing these patches. Metalized cavity-backed patch structures have been demonstrated to give the best performance, however, they are very expensive to manufacture. In this dissertation, we develop an alternative low-cost bandwidth enhancement topology. The proposed topology is based on substrate-integrated waveguides. The great potential of the proposed structure lies in being amenable to the conventional PCB fabrication. Moreover, substrate-integrated cavity-backed structures facilitate the design of sophisticated arrays that are very expensive to develop using the conventional metalized cavity-backed topology, which includes the common broadside arrays used in fixed-beam applications and the scanned phased arrays used in RADAR applications

Development of the ALMA-North America Sideband-Separating SIS Mixers

As the Atacama Large Millimeter/submillimeter Array (ALMA) nears completion, 73 dual-polarization receivers have been delivered for each of Bands 3 (84-116 GHz) and 6 (211-275 GHz). The receivers use sideband-separating superconducting Nb/Al-AlOx/Nb tunnel-junction (SIS) mixers, developed for ALMA to suppress atmospheric noise in the image band. The mixers were designed taking into account dynamic range, input return loss, and signal-to-image conversion (which can be significant in SIS mixers). Typical SSB receiver noise temperatures in Bands 3 and 6 are 30 K and 60 K, resp., and the image rejection is typically 15 dB.Comment: Submitted to IEEE Trans. Microwave Theory Tech., June 2013. 10 pages, 21 figure

G-band waveguide to microstrip transition for MMIC integration

In recent years, Millimetre-Wave (MMW) frequencies (30-300 GHz) have been exploited for a variety of attractive applications such as astronomical observation, medical imaging, aircraft aided-control landing, security and concealed weapons detection. All this was also possible thanks to the advances in high frequency circuits where Monolithic Microwave Integrated Circuits (MMICs) represent a key factor. Systems working at MMW often use metal waveguides as interconnect elements and transitions are em- ployed to transfer the signals from these elements to the Radio Frequency (RF) circuits. The objective of this thesis is to design, fabricate and characterise electromagnetic transitions between rectangular waveguide (WR) and planar transmission lines at G-band frequencies (140-220 GHz). The first part of this work presents an overview of the electromagnetic properties of the atmosphere at MMW frequencies and their use for passive MMW imaging applications. Fundamental design concepts and prototypes of real-time imagers are also represented, based on the pioneering work carried out at QinetiQ Ltd. An extensive review of the scientific literature on waveguide transitions presents previous designs and architectures. The work proceeds through design, simulation, fabrication and measurements of G-band transitions highlighting advantages and disadvantages of different structures. The novel design of Elevated E-plane probes, used as waveguide to microstrip transitions in this work, extends the fabrication technique of MMIC air-bridges to build suspended metal structures and provides an additional optimising parameter to improve the reflection performance of the transition by decomposing the substrate influence on the metal probe. The innovative Elevated E-plane probe is fabricated on Semi-Insulated Gallium Arsenide (SI-GaAs) and it is MMIC-integrated, reducing system complexity and optimizing fabrication and assembly costs. The core of the thesis details the fabrication processes and procedures and a separate section describes the manufacture of G-band rectangular waveguide blocks that host the transitions. The overall fabrication is carried out using in-house facilities at the University of Glasgow without the aid of external facilities. Measured results are presented and discussed, validating design and simulations. This work has led to a successful design and fabrication of GaAs-integrated rectangular waveg- uide to microstrip line transition at G-band

The Concept of Substrate Integrated E-plane Waveguide and Circuits

In this thesis, a new type of substrate integrated waveguide is proposed for implementing E-plane type of waveguide circuits on printed circuit boards. obviously, these E-plane type of circuits cannot be realized by the conventional substrate integrated waveguide. The so-called substrate integrated E-plane waveguide consists of two circuit boards attached to each other. Two copper strips are inserted in between two circuit boards, where plated through holes are penetrated through them along the transmission direction. The plated through holes and copper strips altogether played as side walls of a conventional waveguide to support longitudinal and vertical currents. Simulation is carried out and the result shows that the proposed waveguide is able to guide horizontally polarized electromagnetive wave. An E-plane inductive septa filter, two one-dimensional E-plane offset waveguide filters, and an air-filled evanescent-mode band-pass filter are proposed as examples to prove that E-plane type of circuits are able to be built based on this new synthesized waveguide structure

Rotated Half-Mode Substrate Integrated Waveguide and other Planar Integrated Structures

High data rate communication channels are becoming more and more integrated into our increasingly technological society. Substrate Integrated Waveguides (SIW) are one planar solution available to the microwave engineer, offering a low-loss and low dispersion means of propagating these high speed, high bandwidth signals. In this thesis, a brief synopsis of SIW structures and components is presented covering the basic waveguide propagating modes and cut-off frequencies. The main analysis techniques associated with SIWs including full wave electromagnetic modelling methods are overviewed, and the associated loss mechanisms of conduction, dielectric and radiation defined, leading to the design rules and guidelines on how best to mitigate them. SIW antennas as both leaky-wave and radiating slots are discussed and an example of a single and dual resonating slot antenna design is presented, along with a detailed review of a novel switch beam antenna developed for use within the current WiFi bands. The Slot SIW (or SSIW), which has a small longitudinal gap in one of the main conducting surfaces, allows easy integration of lumped elements or active devices, enabling the waveguide to be loaded with impedances or to be shorted. When the slot is shorted, the waveguide reverts back to the full SIW mode, and when partially loaded an intermediate state results. This is discussed, and the SSIW analysed with the transverse resonance technique, leading to the development of a travelling wave attenuator with the SSIW being periodically loaded with pin diodes. The application of the pin diodes required the use of a capacitive overlay, a development of flexi circuit design to allow capacitive coupling of impedances to connect to the waveguide. The overlay concept is extended further, to form novel passive bandpass filters, with the introduction of virtual vias. A limitation of the SSIW is that the majority of the field resides within the dielectric; this allows only a limited interaction with the field at the slot. The rotated Half Mode SIW (rHMSIW), a new variant of the SIW family, places the maximum of the electric field directly on the top dielectric surface, allowing for direct interaction. The waveguide width a is now defined by the dielectric thickness, allowing for the waveguide height b to be adjustable, in normal SIWs this is the other way round; the dielectric thickness fixing the waveguide height and the waveguide width being adjustable. The rHMSIW is characterised with regard to the height and width ratios b/a and the dielectric exposed width (which is adjustable). These parameters effect the modal cut-off frequency, this is investigated and a new equation describing the fundamental mode cut-off frequency is empirically derived. Finally a test coupon which spans the Ku band is designed and measured, which required the development of a novel waveguide transition