Low-voltage tunable pseudo-differential transconductor with high linearity

A novel tunable transconductor is presented. Input transistors operate in the triode region to achieve programmable voltage-to-current conversion. These transistors are kept in the triode region by a novel negative feedback loop which features simplicity, low voltage requirements, and high output resistance. A linearity analysis is carried out which demonstrates how the proposed transconductance tuning scheme leads to high linearity in a wide transconductance range. Measurement results for a 0.5 μm CMOS implementation of the transconductor show a transconductance tuning range of more than a decade (15 μA/V to 165 μA/V) and a total harmonic distortion of −67 dB at 1 MHz for an input of 1 Vpp and a supply voltage of 1.8 V

Automatic tuning for linearly tunable filter

A new tuning scheme for linearly tunable high-Q filters is proposed. The tuning method is based on using the phase information for both frequency and Q factor tuning. There is no need to find out the relationship between a filter's passband magnitude and Q. A gm-C biquadratic filter is designed to demonstrate the proposed tuning circuitry. The project includes a phase locked loop (PLL) based frequency tuning loop, reference clock generator, and differential difference amplifier (DDA) for dealing with frequency and Q factor tuning loop and linearly tunable second order gm-C bandpass filter. Simulation results for a 10 MHz prototype filter using AMI 0.5μm process is presented. The chip testing results show that the automatic frequency tuning error is 2.5% for the 10 MHz case

Systematic Comparison of HF CMOS Transconductors

Transconductors are commonly used as active elements in high-frequency (HF) filters, amplifiers, mixers, and oscillators. This paper reviews transconductor design by focusing on the V-I kernel that determines the key transconductor properties. Based on bandwidth considerations, simple V-I kernels with few or no internal nodes are preferred. In a systematic way, virtually all simple kernels published in literature are generated. This is done in two steps: 1) basic 3-terminal transconductors are covered and 2) then five different techniques to combine two of them in a composite V-I kernel. In order to compare transconductors in a fair way, a normalized signal-to-noise ratio (NSNR) is defined. The basic V-I kernels and the five classes of composite V-I kernels are then compared, leading to insight in the key mechanisms that affect NSNR. Symbolic equations are derived to estimate NSNR, while simulations with more advanced MOSFET models verify the results. The results show a strong tradeoff between NSNR and transconductance tuning range. Resistively generated MOSFETs render the best NSNR results and are robust for future technology developments

Low-Noise Micro-Power Amplifiers for Biosignal Acquisition

There are many different types of biopotential signals, such as action potentials (APs), local field potentials (LFPs), electromyography (EMG), electrocardiogram (ECG), electroencephalogram (EEG), etc. Nerve action potentials play an important role for the analysis of human cognition, such as perception, memory, language, emotions, and motor control. EMGs provide vital information about the patients which allow clinicians to diagnose and treat many neuromuscular diseases, which could result in muscle paralysis, motor problems, etc. EEGs is critical in diagnosing epilepsy, sleep disorders, as well as brain tumors. Biopotential signals are very weak, which requires the biopotential amplifier to exhibit low input-referred noise. For example, EEGs have amplitudes from 1 μV [microvolt] to 100 μV [microvolt] with much of the energy in the sub-Hz [hertz] to 100 Hz [hertz] band. APs have amplitudes up to 500 μV [microvolt] with much of the energy in the 100 Hz [hertz] to 7 kHz [hertz] band. In wearable/implantable systems, the low-power operation of the biopotential amplifier is critical to avoid thermal damage to surrounding tissues, preserve long battery life, and enable wirelessly-delivered or harvested energy supply. For an ideal thermal-noise-limited amplifier, the amplifier power is inversely proportional to the input-referred noise of the amplifier. Therefore, there is a noise-power trade-off which must be well-balanced by the designers. In this work I propose novel amplifier topologies, which are able to significantly improve the noise-power efficiency by increasing the effective transconductance at a given current. In order to reject the DC offsets generated at the tissue-electrode interface, energy-efficient techniques are employed to create a low-frequency high-pass cutoff. The noise contribution of the high-pass cutoff circuitry is minimized by using power-efficient configurations, and optimizing the biasing and dimension of the devices. Sufficient common-mode rejection ratio (CMRR) and power supply rejection ratio (PSRR) are achieved to suppress common-mode interferences and power supply noises. Our design are fabricated in standard CMOS processes. The amplifiers’ performance are measured on the bench, and also demonstrated with biopotential recordings

Configurable circuits and their impact on multi-standard RF front-end architectures

This thesis studies configurable circuits and their impact on multi-standard RF front-end architectures. In particular, low-voltage low-power linear LNA and mixer topologies suitable for implementation in multi-standard front-ends are subject of the investigation. With respect to frequency and bandwidth, multi-standard front-ends can be implemented using either tunable or wideband LNA and mixer topologies. Based on the type of the LNA and mixer(s), multi-standard receiver RF front-ends can be divided into three groups. They can be (tunable) narrow-band, wide-band or combined. The advantages and disadvantages of the different multi-standard receiver RF front-ends have been discussed in detail. The partitioning between off-chip selectivity, on-chip selectivity provided by the LNA and mixer, linearity, power consumption and occupied chip area in each multi-standard RF front-end group are thoroughly investigated. A Figure of Merit (FOM) for the multi-standard receiver RF front-end has been introduced. Based on this FOM the most suitable multi-standard RF front-end group in terms of cost-effectiveness can be selected. In order to determine which multi-standard RF front-end group is the most cost-effective for a practical application, a GSM850/E-GSM/DCS/PCS/Bluetooth/WLANa/b/g multi-standard receiver RF front-end is chosen as a demonstrator. These standards are the most frequently used standards in wireless communication, and this combination of standards allows to users almost "anytime-anywhere" voice and data transfer. In order to verify these results, three demonstrators have been defined, designed and implemented, two wideband RF front-end circuits in 90nm CMOS and 65nm CMOS, and one combined multi-standard RF front-end circuit in 65nm CMOS. The proposed multi-standard demonstrators have been compared with the state-of the art narrow-band, wide-band and combined multi-standard RF front-ends. On the proposed multi-standard RF front-ends and the state-of the art multi-standard RF front-ends the proposed FOM have been applied. The comparison shows that the combined multi-standard RF front-end group is the most cost effective multi-standard group for this application

Low-Voltage Ultra-Low-Power Current Conveyor Based on Quasi-Floating Gate Transistors

The field of low-voltage low-power CMOS technology has grown rapidly in recent years; it is an essential prerequisite particularly for portable electronic equipment and implantable medical devices due to its influence on battery lifetime. Recently, significant improvements in implementing circuits working in the low-voltage low-power area have been achieved, but circuit designers face severe challenges when trying to improve or even maintain the circuit performance with reduced supply voltage. In this paper, a low-voltage ultra-low-power current conveyor second generation CCII based on quasi-floating gate transistors is presented. The proposed circuit operates at a very low supply voltage of only ±0.4 V with rail-to-rail voltage swing capability and a total quiescent power consumption of mere 9.5 µW. Further, the proposed circuit is not only able to process the AC signal as it's usual at quasi-floating gate transistors but also the DC which extends the applicability of the proposed circuit. In conclusion, an application example of the current-mode quadrature oscillator is presented. PSpice simulation results using the 0.18 µm TSMC CMOS technology are included to confirm the attractive properties of the proposed circuit

Ultra Low Power Amplification and Digitization System for Neural Signal Recording Applications

The scope is to develop a tunable low power fully integrated bandpass filter and a low power second order sigma-delta ADC modulator for implantable neural signal amplification and digitization applications, with subthreshold circuit design techniques in different CMOS processes. Since biopotentials usually contain low frequency components, the neural filters in this project have to be able to achieve large and predictable time constant for implantable applications. Voltage biased pseudo-resistors are vulnerable to process variations and circuit imperfections, and hence not suitable for implantable applications. A current biased pseudo-resistor is implemented in the neural filters in this work to set the cutoff frequency, and a Taylor series is used to study its linearity. The filters with proposed current biased pseudo-resistors were fabricated in two different CMOS processes and tested. The test results verify that the filters with current biased pseudo-resistors are tunable, and not vulnerable to process variations and circuit imperfections. The filters with current biased pseudo-resistors meet the design requirements of fully integrated, implantable applications. The sigma-delta ADC modulator was designed and simulated in a half micron SOS CMOS process. The simulation results of the ADC confirm the possibility of an ultra low power ADC for neural signal recording applications.School of Electrical & Computer Engineerin