Design of injection locked frequency divider in 65nm CMOS technology for mmW applications

In this paper, an Injection Locking Frequency Divider (ILFD) in 65 nm RF CMOS Technology for applications in millimeter-wave (mm-W) band is presented. The proposed circuit achieves 12.69% of locking range without any tuning mechanism and it can cover the entire mm-W band in presence of Process, Voltage and Temperature (PVT) variations by changing the Injection Locking Oscillator (ILO) voltage control. A design methodology flow is proposed for ILFD design and an overview regarding CMOS capabilities and opportunities for mm-W transceiver implementation is also exposed.Postprint (published version

Ultra high data rate CMOS FEs

The availability of numerous mm-wave frequency bands for wireless communication has motived the exploration of multi-band and multi-mode integrated components and systems in the main stream CMOS technology. This opportunity has faced the RF designer with the transition between schematic and layout. Modeling the performance of circuits after layout and taking into account the parasitic effects resulting from the layout are two issues that are more important and influential at high frequency design. Performaning measurements using on-wafer probing at 60GHz has its own complexities. The very short wave-length of the signals at mm-wave frequencies makes the measurements very sensitiv to the effective length and bending of the interfaces. This paper presents different 60GHz corner blocks, e.g. Low Noise Amplifier, Zero IF mixer, Phase-Locked Loop, A Dual-Mode Mm-Wave Injection-Locked Frequency Divider and an active transformed power amplifiers implemented in CMOS technologies. These results emphasize the feasibility of the realization 60GHZ integrated components and systems in the main stream CMOS technology

Ultra high data rate CMOS front ends

The availability of numerous mm-wave frequency bands for wireless communication has motivated the exploration of multi-band and multi-mode integrated components and systems in the main stream CMOS technology. This opportunity has faced the RF designer with the transition between schematic and layout. Modeling the performance of circuits after layout and taking into account the parasitic effects resulting from the layout are two issues that are more important and influential at high frequency design. Performing measurements using on-wafer probing at 60 GHz has its own complexities. The very short wave-length of the signals at mm-wave frequencies makes the measurements very sensitive to the effective length and bending of the interfaces. This paper presents different 60 GHz corner blocks, e.g. Low Noise Amplifier, Zero IF mixer, Phase-Locked Loop, a Dual-Mode Mm-Wave Injection-Locked Frequency Divider and an active transformed power amplifiers implemented in CMOS technologies. These results emphasize the feasibility of the realization 60 GHZ integrated components and systems in the main stream CMOS technology

Advanced CMOS Integrated Circuit Design and Application

The recent development of various application systems and platforms, such as 5G, B5G, 6G, and IoT, is based on the advancement of CMOS integrated circuit (IC) technology that enables them to implement high-performance chipsets. In addition to development in the traditional fields of analog and digital integrated circuits, the development of CMOS IC design and application in high-power and high-frequency operations, which was previously thought to be possible only with compound semiconductor technology, is a core technology that drives rapid industrial development. This book aims to highlight advances in all aspects of CMOS integrated circuit design and applications without discriminating between different operating frequencies, output powers, and the analog/digital domains. Specific topics in the book include: Next-generation CMOS circuit design and application; CMOS RF/microwave/millimeter-wave/terahertz-wave integrated circuits and systems; CMOS integrated circuits specially used for wireless or wired systems and applications such as converters, sensors, interfaces, frequency synthesizers/generators/rectifiers, and so on; Algorithm and signal-processing methods to improve the performance of CMOS circuits and systems

A Fully Integrated Multi-Band Multi-Output Synthesizer with Wide-Locking-Range 1/3 Injection Locked Divider Utilizing Self-Injection Technique for Multi-Band Microwave Systems

This dissertation reports the development of a new multi-band multi-output synthesizer, 1/2 dual-injection locked divider, 1/3 injection-locked divider with phase-tuning, and 1/3 injection-locked divider with self-injection using 0.18-micrometer CMOS technology. The synthesizer is used for a multi-band multi-polarization radar system operating in the K- and Ka-band. The synthesizer is a fully integrated concurrent tri-band, tri-output phase-locked loop (PLL) with divide-by-3 injection locked frequency divider (ILFD). A new locking mechanism for the ILFD based on the gain control of the feedback amplifier is utilized to enable tunable and enhanced locking range which facilitates the attainment of stable locking states. The PLL has three concurrent multiband outputs: 3.47-4.313 GHz, 6.94-8.626 GHz and 19.44-21.42-GHz. High second-order harmonic suppression of 62.2 dBc is achieved without using a filter through optimization of the balance between the differential outputs. The proposed technique enables the use of an integer-N architecture for multi-band and microwave systems, while maintaining the benefit of the integer-N architecture; an optimal performance in area and power consumption. The 1/2 dual-ILFD with wide locking range and low-power consumption is analyzed and designed together with a divide-by-2 current mode logic (CML) divider. The 1/2 dual-ILFD enhances the locking range with low-power consumption through optimized load quality factor (QL) and output current amplitude (iOSC) simultaneously. The 1/2 dual-ILFD achieves a locking range of 692 MHz between 7.512 and 8.204 GHz. The new 1/2 dual-ILFD is especially attractive for microwave phase-locked loops and frequency synthesizers requiring low power and wide locking range. The 3.5-GHz divide-by-3 (1/3) ILFD consists of an internal 10.5-GHz Voltage Controlled Oscillator (VCO) functioning as an injection source, 1/3 ILFD core, and output inverter buffer. A phase tuner implemented on an asymmetric inductor is proposed to increase the locking range. The other divide-by-3 ILFD utilizes self-injection technique. The self-injection technique substantially enhances the locking range and phase noise, and reduces the minimum power of the injection signal needed for the 1/3 ILFD. The locking range is increased by 47.8 % and the phase noise is reduced by 14.77 dBc/Hz at 1-MHz offset

Design of Frequency divider with voltage vontrolled oscillator for 60 GHz low power phase-locked loops in 65 nm RF CMOS

Increasing memory capacity in mobile devices, is driving the need of high-data rates equipment. The 7 GHz band around 60 GHz provides the opportunity for multi-gigabit/sec wireless communication. It is a real opportunity for developing next generation of High-Definition (HD) devices. In the last two decades there was a great proliferation of Voltage Controlled Oscillator (VCO) and Frequency Divider (FD) topologies in RF ICs on silicon, but reaching high performance VCOs and FDs operating at 60 GHz is in today's technology a great challenge. A key reason is the inaccuracy of CMOS active and passive device models at mm-W. Three critical issues still constitute research objectives at 60 GHz in CMOS: generation of the Local Oscillator (LO) signal (1), division of the LO signal for the Phase-Locked Loop (PLL) closed loop (2) and distribution of the LO signal (3). In this Thesis, all those three critical issues are addressed and experimentally faced-up: a divide-by-2 FD for a PLL of a direct-conversion transceiver operating at mm-W frequencies in 65 nm RF CMOS technology has been designed. Critical issues such as Process, Voltage and Temperature (PVT) variations, Electromagnetic (EM) simulations and power consumption are addressed to select and design a FD with high frequency dividing range. A 60 GHz VCO is co-designed and integrated in the same die, in order to provide the FD with mm-W input signal. VCOs and FDs play critical roles in the PLL. Both of them constitute the PLL core components and they would need co-design, having a big impact in the overall performance especially because they work at the highest frequency in the PLL. Injection Locking FD (ILFD) has been chosen as the optimum FD topology to be inserted in the control loop of mm-W PLL for direct-conversion transceiver, due to the high speed requirements and the power consumption constraint. The drawback of such topology is the limited bandwidth, resulting in narrow Locking Range (LR) for WirelessHDTM applications considering the impact of PVT variations. A simulation methodology is presented in order to analyze the ILFD locking state, proposing a first divide-by-2 ILFD design with continuous tuning. In order to design a wide LR, low power consumption ILFD, the impacts of various alternatives of low/high Q tank and injection scheme are deeply analysed, since the ILFD locking range depends on the Q of the tank and injection efficiency. The proposed 3-bit dual-mixing 60 GHz divide-by-2 LC-ILFD is designed with an accumulation of switching varactors binary scaled to compensate PVT variations. It is integrated in the same die with a 4-bit 60 GHz LC-VCO. The overall circuit is designed to allow measurements of the singles blocks stand-alone and working together. The co-layout is carried on with the EM modelling process of passives devices, parasitics and transmission lines extracted from the layout. The inductors models provided by the foundry are qualified up to 40 GHz, therefore the EM analysis is a must for post-layout simulation. The PVT variations have been simulated before manufacturing and, based on the results achieved, a PLL scheme PVT robust, considering frequency calibration, has been patented. The test chip has been measured in the CEA-Leti (Grenoble) during a stay of one week. The operation principle and the optimization trade-offs among power consumption, and locking ranges of the final selected ILFD topology have been demonstrated. Even if the experimental results are not completely in agreement with the simulations, due to modelling error and inaccuracy, the proposed technique has been validated with post-measurement simulations. As demonstrated, the locking range of a low-power, discrete tuned divide-by-2 ILFD can be enhanced by increasing the injection efficiency, without the drawbacks of higher power consumption and chip area. A 4-bits wide tuning range LC-VCO for mm-W applications has been co-designed using the selected 65 nm CMOS process.Postprint (published version

Quadrature Frequency Synthesis for Wideband Wireless Transceivers

University of Minnesota Ph.D. dissertation. May 2014. Major: Electrical Engineering. Advisor: Ramesh Harjani. 1 computer file (PDF); xi, 112 pages.In this thesis, three different techniques pertinent to quadrature LO generation in high data rate and wideband RF transceivers are presented. Prototype designs are made to verify the performance of the proposed techniques, in three different technologies: IBM 130nm CMOS process, TSMC 65nm CMOS process and IBM 32nm SOI process. The three prototype designs also cover three different frequency bands, ranging from 5GHz to 74GHz. First, an LO generation scheme for a 21 GHz center-frequency, 4-GHz instantaneous bandwidth channelized receiver is presented. A single 1.33 GHz reference source is used to simultaneously generate 20 GHz and 22 GHz LOs with quadrature outputs. Injection locking is used instead of conventional PLL techniques allowing low-power quadrature generation. A harmonic-rich signal, containing both even and odd harmonics of the input reference signal, is generated using a digital pulse slimmer. Two ILO chains are used to lock on to the 10th and 11th harmonics of the reference signal generating the 20 GHz and the 22 GHz quadrature LOs respectively. The prototype design is implemented in IBM's 130 nm CMOS process, draws 110 mA from a 1.2 V supply and occupies an active area of 1.8 square-mm. Next, a wide-tuning range QVCO with a novel complimentary-coupling technique is presented. By using PMOS transistors for coupling two VCOs with NMOS gm-cells, it is shown that significant phase-noise improvement (7-9 dB) can be achieved over the traditional NMOS coupling. This breaks the trade-off between quadrature accuracy and phase-noise, allowing reasonable accuracy without a significant phase-noise hit. The proposed technique is frequency-insensitive, allowing robust coupling over a wide tuning range. A prototype design is done in TSMC 65nm process, with 4-bits of discrete tuning spanning the frequency range 4.6-7.8 GHz (52% FTR) while achieving a minimum FOM of 181.4dBc/Hz and a minimum FOMT of 196dBc/Hz. Finally, a wide tuning-range millimeter wave QVCO is presented that employs a modified transformer-based super-harmonic coupling technique. Using the proposed technique, together with custom-designed inductors and metal capacitors, a prototype is designed in IBM 32nm SOI technology with 6-bits of discrete tuning using switched capacitors. Full EM-extracted simulations show a tuning range of 53.84GHz to 73.59GHz, with an FOM of 173 dBc/Hz and an FOMT of 183 dBc/Hz. With 19.75GHz of tuning range around a 63.7GHz center frequency, the simulated FTR is 31%, surpassing all similar designs in the same band. A slight modification in the tank inductors would enable the QVCO to be employed in multiple mm-Wave bands (57-66 GHz communication band, 71-76 GHz E-band, and 76-77 GHz radar band)

Clock Generation Design for Continuous-Time Sigma-Delta Analog-To-Digital Converter in Communication Systems

Software defined radio, a highly digitized wireless receiver, has drawn huge attention in modern communication system because it can not only benefit from the advanced technologies but also exploit large digital calibration of digital signal processing (DSP) to optimize the performance of receivers. Continuous-time (CT) bandpass sigma-delta (ΣΔ) modulator, used as an RF-to-digital converter, has been regarded as a potential solution for software defined ratio. The demand to support multiple standards motivates the development of a broadband CT bandpass ΣΔ which can cover the most commercial spectrum of 1GHz to 4GHz in a modern communication system. Clock generation, a major building block in radio frequency (RF) integrated circuits (ICs), usually uses a phase-locked loop (PLL) to provide the required clock frequency to modulate/demodulate the informative signals. This work explores the design of clock generation in RF ICs. First, a 2-16 GHz frequency synthesizer is proposed to provide the sampling clocks for a programmable continuous-time bandpass sigma-delta (ΣΔ) modulator in a software radio receiver system. In the frequency synthesizer, a single-sideband mixer combines feed-forward and regenerative mixing techniques to achieve the wide frequency range. Furthermore, to optimize the excess loop delay in the wideband system, a phase-tunable clock distribution network and a clock-controlled quantizer are proposed. Also, the false locking of regenerative mixing is solved by controlling the self-oscillation frequency of the CML divider. The proposed frequency synthesizer performs excellent jitter performance and efficient power consumption. Phase noise and quadrature phase accuracy are the common tradeoff in a quadrature voltage-controlled oscillator. A larger coupling ratio is preferred to obtain good phase accuracy but suffer phase noise performance. To address these fundamental trade-offs, a phasor-based analysis is used to explain bi-modal oscillation and compute the quadrature phase errors given by inevitable mismatches of components. Also, the ISF is used to estimate the noise contribution of each major noise source. A CSD QVCO is first proposed to eliminate the undesired bi-modal oscillation and enhance the quadrature phase accuracy. The second work presents a DCC QVCO. The sophisticated dynamic current-clipping coupling network reduces injecting noise into LC tank at most vulnerable timings (zero crossing points). Hence, it allows the use of strong coupling ratio to minimize the quadrature phase sensitivity to mismatches without degrading the phase noise performance. The proposed DCC QVCO is implemented in a 130-nm CMOS technology. The measured phase noise is -121 dBc/Hz at 1MHz offset from a 5GHz carrier. The QVCO consumes 4.2mW with a 1-V power supply, resulting in an outstanding Figure of Merit (FoM) of 189 dBc/Hz. Frequency divider is one of the most power hungry building blocks in a PLL-based frequency synthesizer. The complementary injection-locked frequency divider is proposed to be a low-power solution. With the complimentary injection schemes, the dividers can realize both even and odd division modulus, performing a more than 100% locking range to overcome the PVT variation. The proposed dividers feature excellent phase noise. They can be used for multiple-phase generation, programmable phase-switching frequency dividers, and phase-skewing circuits

Analysis and design of an 80 Gbit/sec clock and data recovery prototype

La demande croissante de toujours plus de débit pour les télécommunications entraine une augmentation de la fréquence de fonctionnement des liaisons séries. Cette demande se retrouve aussi dans les systèmes embarqués du fait de l'augmentation des performances des composants et périphériques. Afin de s'assurer que le train de données est bien réceptionné, un circuit de restitution d'horloge et de données est placé avant tout traitement du coté du récepteur. Dans ce contexte, les activités de recherche présentées dans cette thèse se concentrent sur la conception d'une CDR (Clock and Data Recovery). Nous détaillerons le comparateur de phase qui joue un rôle critique dans un tel système. Cette thèse présente un comparateur de phase ayant comme avantage d'avoir une mode de fenêtrage et une fréquence de fonctionnement réduite. La topologie spéciale utilisée pour la CDR est décrite, et la théorie relative aux oscillateurs verrouillés en injection est expliquée. L'essentiel du travail de recherche s'est concentrée sur la conception et le layout d'une restitution d'horloge dans le domaine millimétrique, à 80 Gbps. Pour cela plusieurs prototypes ont été réalisés en technologie BiCMOS 130 nm de STMicrolectronics.The increasing bandwidth demand for telecommunication leads to an important rise of serial link operating frequencies. This demand is also present in embedded systems with the growth of devices and peripherals performances. To ensure the data stream is well recovered, a clock and data recovery (CDR) circuit is placed before any logical blocks on the receiver side. The research activities presented in this thesis are related to the design of such a CDR. The phase detector plays a critical role in the CDR circuit and is specially studied. This thesis presents a phase comparator that provides an enhancement by introducing a windowed mode and reducing its operating frequency. The used CDR has a special topology, which is described, and the injection locked oscillator theory is explained. Most of the research of this study has focused on the design and layout of a 80 Gbps CDR. Several prototypes are realized in 130 nm SiGe process from STMicroelectronics.BORDEAUX1-Bib.electronique (335229901) / SudocSudocFranceF