12.8 kHz Energy-Efficient Read-Out IC for High Precision Bridge Sensor Sensing System

학위논문(박사) -- 서울대학교대학원 : 공과대학 전기·정보공학부, 2022.2. 김수환.In the thesis, a high energy-efficient read-out integrated circuit (read-out IC) for a high-precision bridge sensor sensing system is proposed. A low-noise capacitively-coupled chopper instrumentation amplifier (CCIA) followed by a high-resolution incremental discrete-time delta-sigma modulator (DTΔΣΜ) analog-to-digital converter (ADC) is implemented. To increase energy-efficiency, CCIA is chosen, which has the highest energy-efficiency among IA types. CCIA has a programmable gain of 1 to 128 that can amplify the small output of the bridge sensor. Impedance boosting loop (IBL) is applied to compensate for the low input impedance, which is a disadvantage of a CCIA. Also, the sensor offset cancellation technique was applied to CCIA to eliminate the offset resulting from the resistance mismatch of the bridge sensor, and the bridge sensor offset from -350 mV to 350 mV can be eliminated. In addition, the output data rate of the read-out IC is designed to be 12.8 kHz to quickly capture data and to reduce the power consumption of the sensor by turning off the sensor and read-out IC for the rest of the time. Generally, bridge sensor system is much slower than 12.8 kHz. To suppress 1/f noise, system level chopping and correlated double sampling (CDS) techniques are used. Implemented in a standard 0.13-μm CMOS process, the ROIC’s effective resolution is 17.0 bits at gain 1 and that of 14.6 bits at gain 128. The analog part draws the average current of 139.4 μA from 3-V supply, and 60.2 μA from a 1.8 V supply.본 논문에서는 고정밀 브리지 센서 센싱 시스템을 위한 에너지 효율이 높은 Read-out Integrated Circuit (read-out IC)를 제안한다. 저 잡음 Capacitively-Coupled Instrumentation Amplifier (CCIA)에 이은 고해상도 Discrete-time Delta-Sigma 변조기(DTΔΣΜ) 아날로그-디지털 변환기(ADC)를 구현하였다. 에너지 효율을 높이기 위해 IA 유형 중 에너지 효율이 가장 높은 CCIA를 선택하였다. CCIA는 브리지 센서의 작은 출력을 증폭할 수 있는 1 에서 128의 프로그래밍 가능한 전압 이득을 가진다. CCIA의 단점인 낮은 입력 임피던스를 보상하기 위해 Impedance Boosting Loop (IBL)을 적용하였다. 또한 CCIA에 센서 오프셋 제거 기술을 적용하여 브리지 센서의 저항 미스매치로 인한 오프셋을 제거 기능을 탑재하였으며 -350mV에서 350mV까지 브리지 센서 오프셋을 제거할 수 있다. Read-out IC의 출력 데이터 전송률은 12.8kHz로 설계하여 데이터를 빠르게 채고 나머지 시간 동안 센서와 read-out IC를 꺼서 센서의 전력 소비를 줄일 수 있도록 설계하였다. 일반적으로 브리지 센서 시스템은 12.8kHz보다 느리기 때문에 이것이 가능하다. 하지만, 일반적인 CCIA는 입력 임피던스 때문에 빠른 속도에서 설계가 불가능하다. 이를 해결하기 위해 demodulate 차핑을 앰프 내부가 아닌 시스템 차핑을 이용해 해결하였다. 1/f 노이즈를 억제하기 위해 시스템 레벨 차핑 및 상관 이중 샘플링(CDS) 기술이 사용되었다. 0.13μm CMOS 공정에서 구현된 read-out IC의 Effective Resolution (ER)은 전압 이득 1에서 17.0비트이고 전압 이득 128에서 14.6비트를 달성하였다. 아날로그 회로는 3 V 전원에서 139.4μA의 평균 전류를, 디지털 회로는 1.8 V 전원에서 60.2μA의 평균 전류를 사용한다.CHAPTER 1 INTRODUCTION 1 1.1 SMART DEVICES 1 1.2 SMART SENSOR SYSTEMS 4 1.3 WHEATSTONE BRIDGE SENSOR 5 1.4 MOTIVATION 8 1.5 PREVIOUS WORKS 10 1.6 INTRODUCTION OF THE PROPOSED SYSTEM 14 1.7 THESIS ORGANIZATION 16 CHAPTER 2 SYSTEM OVERVIEW 17 2.1 SYSTEM ARCHITECTURE 17 CHAPTER 3 IMPLEMENTATION OF THE CCIA 19 3.1 CAPACITIVELY-COUPLED CHOPPER INSTRUMENTATION AMPLIFIER 19 3.2 IMPEDANCE BOOSTING 22 3.3 SENSOR OFFSET CANCELLATION 25 3.4 AMPLIFIER OFFSET CANCELLATION 29 3.5 AMPLIFIER IMPLEMENTATION 32 3.6 IMPLEMENTATION OF THE CCIA 35 CHAPTER 4 INCREMENTAL ΔΣ ADC 37 4.1 INTRODUCTION OF INCREMENTAL ΔΣ ADC 37 4.2 IMPLEMENTATION OF INCREMENTAL ΔΣ MODULATOR 40 CHAPTER 5 SYSTEM-LEVEL DESIGN 43 5.1 DIGITAL FILTER 43 5.2 SYSTEM-LEVEL CHOPPING & TIMING 46 CHAPTER 5 MEASUREMENT RESULTS 48 6.1 MEASUREMENT SUMMARY 48 6.2 LINEARITY & NOISE MEASUREMENT 51 6.3 SENSOR OFFSET CANCELLATION MEASUREMENT 57 6.4 INPUT IMPEDANCE MEASUREMENT 59 6.5 TEMPERATURE VARIATION MEASUREMENT 63 6.6 PERFORMANCE SUMMARY 66 CHAPTER 7 CONCLUSION 68 APPENDIX A. 69 ENERGY-EFFICIENT READ-OUT IC FOR HIGH-PRECISION DC MEASUREMENT SYSTEM WITH IA POWER REDUCTION TECHNIQUE 69 BIBLIOGRAPHY 83 한글초록 87박

An Energy-Efficient Bridge-to-Digital Converter for Implantable Pressure Monitoring Systems

This paper presents an energy-efficient, duty-cycled, and spinning excitation bridge-to-digital converter (BDC) designed for implantable pressure sensing systems. The circuit provides the measure of the pulmonary artery pressure that is particularly relevant for the monitoring of heart failure and pulmonary hypertension patients. The BDC is made of a piezoresistive pressure sensor and a readout integrated circuit (IC) that comprises an instrumentation amplifier (IA) followed by an analog-to-digital converter (ADC). The proposed design spins both the bridge excitation and the ADC’s sampling input voltages simultaneously and exploits duty cycling to reduce the static power consumption of the bridge sensor and IA while cancelling the IA’s offset and 1/f noise at the same time. The readout IC has been designed and fabricated in a standard 180-nm CMOS process and achieves 8.4 effective number of bits (ENOB) at 1 kHz sampling rate while drawing 0.53 µA current from a 1.2 V supply. The BDC, built with the readout IC and a differential pressure sensor having 5 kΩ bridge resistances, achieves 0.44 mmHg resolution in a 270 mmHg pressure range at 1 ms conversion time. The current consumption of the bridge sensor by employing duty cycling is reduced by 99.8% thus becoming 0.39 µA from a 1.2 V supply. The total conversion energy of the pressure sensing system is 1.1 nJ, and achieves a figure-of-merit (FoM) of 3.3 pJ/conversion, which both represent the state of the art

Design of agile signal conditioning circuits for microelectromechanical sensors

Microelectromechanical systems (MEMS) are used in many applications to detect physical parameters and convert them to an electrical signal. The output of MEMS-based transducers is usually not suitable to be directly processed in the digital or the analog domain, and they could be as small as femto farads in capacitive sensing and micro volts in resistive sensing. Consequently, high sensitivity signal conditioning circuits are essential. In this thesis, it is shown that both the noise and input capacitance are important parameters to ensure optimal capacitive sensing. The dominant noise source in MEMS conditioning circuits is flicker noise, and one of the best methods to mitigate flicker noise is the chopping technique. Three different chopping techniques are considered: single chopper amplifier (SCA), dual chopper amplifier (DCA), and two-stage single chopper amplifier (TCA). Also, their sensitivity and power consumption based on the total gain and sensing capacitance are extracted. It is shown that the distribution of gain between the two stages in the DCA and TCA has a significant effect on the sensitivity, and, based on this distribution, the sensitivity and power consumption change significantly. For small sensor capacitances, the highest sensitivity could be achieved by a DCA because of its ability to decrease the noise floor and the input sensor capacitance simultaneously. A novel DCA is proposed to reach higher sensitivity and reduced power consumption. In this DCA, two supply voltages are utilized, and the second stage is composed of two parallel paths that improve the SNR and provide two gain settings. This circuit is fabricated in the GlobalFoundries 0.13 μm CMOS technology. The measurement results show a power consumption of 2.66 μW for the supply voltage of 0.7 V and of 3.26 μW for the supply voltage of 1.2 V. The single path DCA has a gain of 34 dB with bandwidth of 4 kHz and input noise floor of 25 nV/√Hz. The dual path DCA has a gain of 38 dB with bandwidth of 3 kHz and input noise floor of 40 nV/√Hz. To be able to detect the signal near DC frequencies, another circuit is proposed which has a configurable bandwidth and a sub-μHz noise corner frequency. This circuit is composed of three stages, and three chopping frequencies are used to mitigate the flicker noise of the three stages. The simulated circuit is designed in the GlobalFoundries 0.13 μm CMOS technology with supply voltages of 0.4 V and 1.2 V. The total power consumption is of 6.7 μW. A gain of 68 dB and bandwidths of 1, 10, 100 and 1000 Hz are achieved. The input referred noise floor is of 20.5 nV/√Hz and the design attains a good power efficiency factor of 4.0. In the capacitive mode, the noise floor is of 3.6 zF for a 100 fF capacitance sensor

New Techniques for Multi-Channel Biosignal Acquisition and Low-Power, Low-Resistance-Measurement Systems

Dense electrical recording of biosignals has been developed to provide spatial resolution and precise temporal information for health monitoring, diagnostics, and clinical research. However, more electrodes require more wires, and wiring density quickly becomes a limiting factor. To break this bottleneck, we proposed a frequency-division multiplexing (FDM) based architecture for multi-channel acquisition systems. In this final exam, I present two applications that make use of this FDM technique. The first is an FDM-based multi-channel electromyography (EMG) acquisition system, which demonstrates that the FDM system not only reduces wire count, but also mitigates the effect of low frequency motion artifacts and 50/60 Hz mains interference introduced in the wire. An FDM-based four-channel EMG recording is demonstrated, while carrying all channels over a 3-wire interface, and the system achieves an attenuation of low-frequency cable motion artifacts by 15X an! d 60Hz mains noise coupled in the cable by 62X. A second application that forms the basis of my current research effort is an FDM-based neural recording system with multiple graphene active electrodes. We demonstrated a two-channel system including graphene FET electrodes, a custom integrated circuit (IC) analog front-end (AFE), and digital demodulation. In related multi-channel sensor work, a growing need for ultra-low-power sensors has driven continuous advancement in read-out circuits for temperature, humidity, and pressure. IC-integrated Wheatstone bridges, commonly used, are efficient for large sensor resistance (5k-500kohm), but measuring small resistance (30,000x smaller nominal sensor resistance

Interface Circuits for Microsensor Integrated Systems

ca. 200 words; this text will present the book in all promotional forms (e.g. flyers). Please describe the book in straightforward and consumer-friendly terms. [Recent advances in sensing technologies, especially those for Microsensor Integrated Systems, have led to several new commercial applications. Among these, low voltage and low power circuit architectures have gained growing attention, being suitable for portable long battery life devices. The aim is to improve the performances of actual interface circuits and systems, both in terms of voltage mode and current mode, in order to overcome the potential problems due to technology scaling and different technology integrations. Related problems, especially those concerning parasitics, lead to a severe interface design attention, especially concerning the analog front-end and novel and smart architecture must be explored and tested, both at simulation and prototype level. Moreover, the growing demand for autonomous systems gets even harder the interface design due to the need of energy-aware cost-effective circuit interfaces integrating, where possible, energy harvesting solutions. The objective of this Special Issue is to explore the potential solutions to overcome actual limitations in sensor interface circuits and systems, especially those for low voltage and low power Microsensor Integrated Systems. The present Special Issue aims to present and highlight the advances and the latest novel and emergent results on this topic, showing best practices, implementations and applications. The Guest Editors invite to submit original research contributions dealing with sensor interfacing related to this specific topic. Additionally, application oriented and review papers are encouraged.

Low-power Wearable Healthcare Sensors

Advances in technology have produced a range of on-body sensors and smartwatches that can be used to monitor a wearer’s health with the objective to keep the user healthy. However, the real potential of such devices not only lies in monitoring but also in interactive communication with expert-system-based cloud services to offer personalized and real-time healthcare advice that will enable the user to manage their health and, over time, to reduce expensive hospital admissions. To meet this goal, the research challenges for the next generation of wearable healthcare devices include the need to offer a wide range of sensing, computing, communication, and human–computer interaction methods, all within a tiny device with limited resources and electrical power. This Special Issue presents a collection of six papers on a wide range of research developments that highlight the specific challenges in creating the next generation of low-power wearable healthcare sensors

Microelectromechanical Systems for Wireless Radio Front-ends and Integrated Frequency References.

Microelectromechanical systems (MEMS) have great potential in realizing chip-scale integrated devices for energy-efficient analog spectrum processing. This thesis presents the development of a new class of MEMS resonators and filters integrated with CMOS readout circuits for RF front-ends and integrated timing applications. Circuit-level innovations coupled with new device designs allowed for realizing integrated systems with improved performance compared to standalone devices reported in the literature. The thesis is comprised of two major parts. The first part of the thesis is focused on developing integrated MEMS timing devices. Fused silica is explored as a new structural material for fabricating high-Q vibrating micromechanical resonators. A piezoelectric-on-silica MEMS resonator is demonstrated with a high Q of more than 20,000 and good electromechanical coupling. A low phase noise CMOS reference oscillator is implemented using the MEMS resonator as a mechanical frequency reference. Temperature-stable operation of the MEMS oscillator is realized by ovenizing the platform using an integrated heater. In an alternative scheme, the intrinsic temperature sensitivity of MEMS resonators is utilized for temperature sensing, and active compensation for MEMS oscillators is realized by oven-control using a phase-locked loop (PLL). CMOS circuits are implemented for realizing the PLL-based low-power oven-control system. The active compensation technique realizes a MEMS oscillator with an overall frequency drift within +/- 4 ppm across -40 to 70 °C, without the need for calibration. The CMOS PLL circuits for oven-control is demonstrated with near-zero phase noise invasion on the MEMS oscillators. The properties of PLL-based compensation for realizing ultra-stable MEMS frequency references are studied. In the second part of the thesis, RF MEMS devices, including tunable capacitors, high-Q inductors, and ohmic switches, are fabricated using a surface micromachined integrated passive device (IPD) process. Using this process, an integrated ultra-wideband (UWB) filter has been demonstrated, showing low loss and a small form factor. To further address the issue of narrow in-band interferences in UWB communication, a tunable MEMS bandstop filter is integrated with the bandpass filter with more than an octave frequency tuning range. The bandstop filter can be optionally switched off by employing MEMS ohmic switches co-integrated on the same chip.PhDElectrical EngineeringUniversity of Michigan, Horace H. Rackham School of Graduate Studieshttp://deepblue.lib.umich.edu/bitstream/2027.42/109069/1/zzwu_1.pd

Bolometers

Infrared Detectors and technologies are very important for a wide range of applications, not only for Military but also for various civilian applications. Comparatively fast bolometers can provide large quantities of low cost devices opening up a new era in infrared technologies. This book deals with various aspects of bolometer developments. It covers bolometer material aspects, different types of bolometers, performance limitations, applications and future trends. The chapters in this book will be useful for senior researchers as well as beginning graduate students

High performance readout circuits and devices for Lorentz force resonant CMOS-MEMS magnetic sensors

In the last decades, sensing capabilities of martphones have greatly improved since the early mobile phones of the 90’s. Moreover, wearables and the automotive industry require increasing electronics and sensing sophistication. In such echnological advance, Micro Electro Mechanical Systems (MEMS) have played an important role as accelerometers and gyroscopes were the first sensors based on MEMS technology massively introduced in the market. In contrast, it still does not exist a commercial MEMS-based compass, even though Lorentz force MEMS magnetometers were first proposed in the late 90’s. Currently, Lorentz force MEMS magnetometers have been under the spotlight as they can offer an integrated solution to nowadays sensing power. As a consequence, great advances have been achieved, but various bottlenecks limit the introduction of Lorentz force MEMS compasses in the market. First, current MEMS magnetometers require high current consumption and high biasing voltages to achieve good sensitivities. Moreover, even though devices with excellent performance and sophistication are found in the literature, there is still a lack of research on the readout electronic circuits, specially in the digital signal processing, and closed loop control. Second, most research outcomes rely on custom MEMS fabrication rocesses to manufacture the devices. This is the same approach followed in current commercial MEMS, but it requires different fabrication processes for the electronics and the MEMS. As a consequence, manufacturing cost is high and sensor performance is affected by the MEMS-electronics interface parasitics. This dissertation presents potential solutions to these issues in order to pave the road to the commercialization of Lorentz force MEMS compasses. First, a complete closed loop, digitally controlled readout system is proposed. The readout circuitry, implemented with off-the-shelf commercial components, and the digital control, on an FPGA, are proposed as a proof of concept of the feasibility, and potential benefits, of such architecture. The proposed system has a measured noise of 550 nT / vHz while the MEMS is biased with 300 µA rms and V = 1 V . Second, various CMOS-MEMS magnetometers have been designed using the BEOL part of the TSMC and SMIC 180 nm standard CMOS processes, and wet and vapor etched. The devices measurement and characterisation is used to analyse the benefits and drawbacks of each design as well as releasing process. Doing so, a high volume manufacturing viability can be performed. Yield values as high as 86% have been obtained for one device manufactured in a SMIC 180 nm full wafer run, having a sensitivity of 2.82 fA/µT · mA and quality factor Q = 7.29 at ambient pressure. While a device manufactured in TSMC 180 nm has Q = 634.5 and a sensitivity of 20.26 fA/µT ·mA at 1 mbar and V = 1 V. Finally, an integrated circuit has been designed that contains all the critical blocks to perform the MEMS signal readout. The MEMS and the electronics have been manufactured using the same die area and standard TSMC 180 nm process in order to reduce parasitics and improve noise and current consumption. Simulations show that a resolution of 8.23 µT /mA for V = 1 V and BW = 10 Hz can be achieved with the designed device.En les últimes dècades, tenint en compte els primers telèfons mòbils dels anys 90, les capacitats de sensat dels telèfons intel·ligents han millorat notablement. A més, la indústria automobilística i de wearables necessiten cada cop més sofisticació en el sensat. Els Micro Electro Mechanical Systems (MEMS) han tingut un paper molt important en aquest avenç tecnològic, ja que acceleròmetres i giroscopis varen ser els primers sensors basats en la tecnologia MEMS en ser introduïts massivament al mercat. En canvi, encara no existeix en la indústria una brúixola electrònica basada en la tecnologia MEMS, tot i que els magnetòmetres MEMS varen ser proposats per primera vegada a finals dels anys 90. Actualment, els magnetòmetres MEMS basats en la força de Lorentz són el centre d'atenció donat que poden oferir una solució integrada a les capacitats de sensat actuals. Com a conseqüència, s'han aconseguit grans avenços encara que existeixen diversos colls d'ampolla que encara limiten la introducció al mercat de brúixoles electròniques MEMS basades en la força de Lorentz. Per una banda, els agnetòmetres MEMS actuals necessiten un consum de corrent i un voltatge de polarització elevats per aconseguir una bona sensibilitat. A més, tot i que a la literatura hi podem trobar dispositius amb rendiments i sofisticació excel·lents, encara existeix una manca de recerca en el circuit de condicionament, especialment de processat digital i control del llaç. Per altra banda, moltes publicacions depenen de processos de fabricació de MEMS fets a mida per fabricar els dispositius. Aquesta és la mateixa aproximació que s'utilitza actualment en la indústria dels MEMS, però té l'inconvenient que requereix processos de fabricació diferents pels MEMS i l’electrònica. Per tant, el cost de fabricació és alt i el rendiment del sensor queda afectat pels paràsits en la interfície entre els MEMS i l'electrònica. Aquesta tesi presenta solucions potencials a aquests problemes amb l'objectiu d'aplanar el camí a la comercialització de brúixoles electròniques MEMS basades en la força de Lorentz. En primer lloc, es proposa un circuit de condicionament complet en llaç tancat controlat digitalment. Aquest s'ha implementat amb components comercials, mentre que el control digital del llaç s'ha implementat en una FPGA, tot com una prova de concepte de la viabilitat i beneficis potencials que representa l'arquitectura proposada. El sistema presenta un soroll de 550 nT / vHz quan el MEMS està polaritzat amb 300 µArms i V = 1 V . En segon lloc, s'han dissenyat varis magnetòmetres CMOS-MEMS utilitzant la part BEOL dels processos CMOS estàndard de TSMC i SMIC 180 nm, que després s'han alliberat amb líquid i gas. La mesura i caracterització dels dispositius s’ha utilitzat per analitzar els beneficis i inconvenients de cada disseny i procés d’alliberament. D'aquesta manera, s'ha pogut realitzar un anàlisi de la viabilitat de la seva fabricació en massa. S'han obtingut valors de yield de fins al 86% per un dispositiu fabricat amb SMIC 180 nm en una oblia completa, amb una sensibilitat de 2.82 fA/µT · mA i un factor de qualitat Q = 7.29 a pressió ambient. Per altra banda, el dispositiu fabricat amb TSMC 180 nm presenta una Q = 634.5 i una sensibilitat de 20.26 fA/µT · mA a 1 mbar amb V = 1 V. Finalment, s'ha dissenyat un circuit integrat que conté tots els blocs per a realitzar el condicionament de senyal del MEMS. El MEMS i l'electrònica s'han fabricat en el mateix dau amb el procés estàndard de TSMC 180 nm per tal de reduir paràsits i millorar el soroll i el consum de corrent. Les simulacions mostren una resolució de 8.23 µT /mA amb V = 1 V i BW = 10 Hz pel dispositiu dissenyat

Index to 1981 NASA Tech Briefs, volume 6, numbers 1-4

Short announcements of new technology derived from the R&D activities of NASA are presented. These briefs emphasize information considered likely to be transferrable across industrial, regional, or disciplinary lines and are issued to encourage commercial application. This index for 1981 Tech Briefs contains abstracts and four indexes: subject, personal author, originating center, and Tech Brief Number. The following areas are covered: electronic components and circuits, electronic systems, physical sciences, materials, life sciences, mechanics, machinery, fabrication technology, and mathematics and information sciences