One-Quadrant Switched-Mode Power Converters

This article presents the main topics related to one-quadrant power converters. The basic topologies are analysed and a simple methodology to obtain the steady-state output-input voltage ratio is set out. A short discussion of different methods to control one-quadrant power converters is presented. Some of the reported derived topologies of one-quadrant power converters are also considered. Some topics related to one-quadrant power converters such as synchronous rectification, hard and soft commutation, and interleaved converters are discussed. Finally, a brief introduction to resonant converters is given.Comment: 25 pages, contribution to the 2014 CAS - CERN Accelerator School: Power Converters, Baden, Switzerland, 7-14 May 201

Highly Integrated Dc-dc Converters

A monolithically integrated smart rectifier has been presented first in this work. The smart rectifier, which integrates a power MOSFET, gate driver and control circuitry, operates in a self-synchronized fashion based on its drain-source voltage, and does not need external control input. The analysis, simulation, and design considerations are described in detail. A 5V, 5-µm CMOS process was used to fabricate the prototype. Experimental results show that the proposed rectifier functions as expected in the design. Since no dead-time control needs to be used to switch the sync-FET and ctrl-FET, it is expected that the body diode losses can be reduced substantially, compared to the conventional synchronous rectifier. The proposed self-synchronized rectifier (SSR) can be operated at high frequencies and maintains high efficiency over a wide load range. As an example of the smart rectifier\u27s application in isolated DC-DC converter, a synchronous flyback converter with SSR is analyzed, designed and tested. Experimental results show that the operating frequency could be as high as 4MHz and the efficiency could be improved by more than 10% compared to that when a hyper fast diode rectifier is used. Based on a new current-source gate driver scheme, an integrated gate driver for buck converter is also developed in this work by using a 0.35µm CMOS process with optional high voltage (50V) power MOSFET. The integrated gate driver consists both the current-source driver for high-side power MOSFET and low-power driver for low-side power iv MOSFET. Compared with the conventional gate driver circuit, the current-source gate driver can recovery some gate charging energy and reduce switching loss. So the current-source driver (CSD) can be used to improve the efficiency performance in high frequency power converters. This work also presents a new implementation of a power supply in package (PSiP) 5MHz buck converter, which is different from all the prior-of-art PSiP solutions by using a high-Q bondwire inductor. The high-Q bondwire inductor can be manufactured by applying ferrite epoxy to the common bondwire during standard IC packaging process, so the new implementation of PSiP is expected to be a cost-effective way of power supply integration

Improved Accuracy Area Efficient Hybrid CMOS/GaN DC-DC Buck Converterfor High Step-Down Ratio Applications

abstract: Point of Load (POL) DC-DC converters are increasingly used in space applications, data centres, electric vehicles, portable computers and devices and medical electronics. Heavy computing and processing capabilities of the modern devices have ushered the use of higher battery supply voltage to increase power storage. The need to address this consumer experience driven requirement has propelled the evolution of the next generation of small form-factor power converters which can operate with higher step down ratios while supplying heavy continuous load currents without sacrificing efficiency. Constant On-Time (COT) converter topology is capable of achieving stable operation at high conversion ratio with minimum off-chip components and small silicon area. This work proposes a Constant On-Time buck dc-dc converter for a wide dynamic input range and load currents from 100mA to 10A. Accuracy of this ripple based converter is improved by a unique voltage positioning technique which modulates the reference voltage to lower the average ripple profile close to the nominal output. Adaptive On-time block features a transient enhancement scheme to assist in faster voltage droop recovery when the output voltage dips below a defined threshold. UtilizingGallium Nitride (GaN) power switches enable the proposed converter to achieve very high efficiency while using smaller size inductor-capacitor (LC) power-stage. Use of novel Superjunction devices with higher drain-source blocking voltage simplifies the complex driver design and enables faster frequency of operation. It allows 1.8VComplementary Metal-Oxide Semiconductor (CMOS) devices to effectively drive GaNpower FETs which require 5V gate signal swing. The presented controller circuit uses internal ripple generation which reduces reliance on output cap equivalent series resistance (ESR) for loop stability and facilitates ripples reduction at the output. The ripple generation network is designed to provide ai optimally stable performance while maintaining load regulation and line regulation accuracy withing specified margin. The chip with ts external Power FET package is proposed to be integrated on a printed circuit board for testing. The designed power converter is expected to operate under 200 MRad of a total ionising dose of radiation enabling it to function within large hadron collider at CERN and space satellite and probe missions.Dissertation/ThesisMasters Thesis Electrical Engineering 201

Dual-frequency single-inductor multiple-output (DF-SIMO) power converter topology for SoC applications

Modern mixed-signal SoCs integrate a large number of sub-systems in a single nanometer CMOS chip. Each sub-system typically requires its own independent and well-isolated power supply. However, to build these power supplies requires many large off-chip passive components, and thus the bill of material, the package pin count, and the printed circuit board area and complexity increase dramatically, leading to higher overall cost. Conventional (single-frequency) Single-Inductor Multiple-Output (SIMO) power converter topology can be employed to reduce the burden of off-chip inductors while producing a large number of outputs. However, this strategy requires even larger off-chip output capacitors than single-output converters due to time multiplexing between the multiple outputs, and thus many of them suffer from cross coupling issues that limit the isolation between the outputs. In this thesis, a Dual-Frequency SIMO (DF-SIMO) buck converter topology is proposed. Unlike conventional SIMO topologies, the DF-SIMO decouples the rate of power conversion at the input stage from the rate of power distribution at the output stage. Switching the input stage at low frequency (~2 MHz) simplifies its design in nanometer CMOS, especially with input voltages higher than 1.2 V, while switching the output stage at higher frequency enables faster output dynamic response, better cross-regulation, and smaller output capacitors without the efficiency and design complexity penalty of switching both the input and output stages at high frequency. Moreover, for output switching frequency higher than 100 MHz, the output capacitors can be small enough to be integrated on-chip. A 5-output 2-MHz/120-MHz design in 45-nm CMOS with 1.8-V input targeting low-power microcontrollers is presented as an application. The outputs vary from 0.6 to 1.6 V, with 4 outputs providing up to 15 mA and one output providing up to 50 mA. The design uses single 10-uH off-chip inductor, 2-nF on-chip capacitor for each 15-mA output and 4.5-nF for the 50-mA output. The peak efficiency is 73%, Dynamic Voltage Scaling (DVS) is 0.6 V/80 ns, and settling time is 30 ns for half-to-full load steps with no observable overshoot/undershoot or cross-coupling transients. The DF-SIMO topology enables realizing multiple efficient power supplies with faster dynamic response, better cross-regulation, and lower overall cost compared to conventional SIMO topologies

Time-Domain/Digital Frequency Synchronized Hysteresis Based Fully Integrated Voltage Regulator

abstract: Power management integrated circuit (PMIC) design is a key module in almost all electronics around us such as Phones, Tablets, Computers, Laptop, Electric vehicles, etc. The on-chip loads such as microprocessors cores, memories, Analog/RF, etc. requires multiple supply voltage domains. Providing these supply voltages from off-chip voltage regulators will increase the overall system cost and limits the performance due to the board and package parasitics. Therefore, an on-chip fully integrated voltage regulator (FIVR) is required. The dissertation presents a topology for a fully integrated power stage in a DC-DC buck converter achieving a high-power density and a time-domain hysteresis based highly integrated buck converter. A multi-phase time-domain comparator is proposed in this work for implementing the hysteresis control, thereby achieving a process scaling friendly highly digital design. A higher-order LC notch filter along with a flying capacitor which couples the input and output voltage ripple is implemented. The power stage operates at 500 MHz and can deliver a maximum power of 1.0 W and load current of 1.67 A, while occupying 1.21 mm2 active die area. Thus achieving a power density of 0.867 W/mm2 and current density of 1.377 A/mm2. The peak efficiency obtained is 71% at 780 mA of load current. The power stage with the additional off-chip LC is utilized to design a highly integrated current mode hysteretic buck converter operating at 180 MHz. It achieves 20 ns of settling and 2-5 ns of rise/fall time for reference tracking. The second part of the dissertation discusses an integrated low voltage switched-capacitor based power sensor, to measure the output power of a DC-DC boost converter. This approach results in a lower complexity, area, power consumption, and a lower component count for the overall PV MPPT system. Designed in a 180 nm CMOS process, the circuit can operate with a supply voltage of 1.8 V. It achieves a power sense accuracy of 7.6%, occupies a die area of 0.0519 mm2, and consumes 0.748 mW of power.Dissertation/ThesisDoctoral Dissertation Electrical Engineering 201

Small Form Factor Hybrid CMOS/GaN Buck Converters for 10W Point of Load Applications

abstract: Point of Load (PoL) converters are important components to the power distribution system in computer power supplies as well as automotive, space, nuclear, and medical electronics. These converters often require high output current capability, low form factor, and high conversion ratios (step-down) without sacrificing converter efficiency. This work presents hybrid silicon/gallium nitride (CMOS/GaN) power converter architectures as a solution for high-current, small form-factor PoL converters. The presented topologies use discrete GaN power devices and CMOS integrated drivers and controller loop. The presented power converters operate in the tens of MHz range to reduce the form factor by reducing the size of the off-chip passive inductor and capacitor. Higher conversion ratio is achieved through a fast control loop and the use of GaN power devices that exhibit low parasitic gate capacitance and minimize pulse swallowing. This work compares three discrete buck power converter architectures: single-stage, multi-phase with 2 phases, and stacked-interleaved, using components-off-the-shelf (COTS). Each of the implemented power converters achieves over 80% peak efficiency with switching speeds up-to 10MHz for high conversion ratio from 24V input to 5V output and maximum load current of 10A. The performance of the three architectures is compared in open loop and closed loop configurations with respect to efficiency, output voltage ripple, and power stage form factor. Additionally, this work presents an integrated CMOS gate driver solution in CMOS 0.35um technology. The CMOS integrated circuit (IC) includes the gate driver and the closed loop controller for directly driving a single-stage GaN architecture. The designed IC efficiently drives the GaN devices up to 20MHz switching speeds. The presented controller technique uses voltage mode control with an innovative cascode driver architecture to allow a 3.3V CMOS devices to effectively drive GaN devices that require 5V gate signal swing. Furthermore, the designed power converter is expected to operate under 400MRad of total dose, thus enabling its use in high-radiation environments for the large hadron collider at CERN and nuclear facilities.Dissertation/ThesisMasters Thesis Electrical Engineering 201

Merged Two-Stage Power Converter With Soft Charging Switched-Capacitor Stage in 180 nm CMOS

In this paper, we introduce a merged two-stage dc-dc power converter for low-voltage power delivery. By separating the transformation and regulation function of a dc-dc power converter into two stages, both large voltage transformation and high switching frequency can be achieved. We show how the switched-capacitor stage can operate under soft charging conditions by suitable control and integration (merging) of the two stages. This mode of operation enables improved efficiency and/or power density in the switched-capacitor stage. A 5-to-1 V, 0.8 W integrated dc-dc converter has been developed in 180 nm CMOS. The converter achieves a peak efficiency of 81%, with a regulation stage switching frequency of 10 MHz.Interconnect Focus Center (United States. Defense Advanced Research Projects Agency and Semiconductor Research Corporation