INVESTIGATING THE EFFECTS OF SINGLE-EVENT UPSETS IN STATIC AND DYNAMIC REGISTERS

Radiation-induced single-event upsets (SEUs) pose a serious threat to the reliability of registers. The existing SEU analyses for static CMOS registers focus on the circuit-level impact and may underestimate the pertinent SEU information provided through node analysis. This thesis proposes SEU node analysis to evaluate the sensitivity of static registers and apply the obtained node information to improve the robustness of the register through selective node hardening (SNH) technique. Unlike previous hardening techniques such as the Triple Modular Redundancy (TMR) and the Dual Interlocked Cell (DICE) latch, the SNH method does not introduce larger area overhead. Moreover, this thesis also explores the impact of SEUs in dynamic flip-flops, which are appealing for the design of high-performance microprocessors. Previous work either uses the approaches for static flip-flops to evaluate SEU effects in dynamic flip-flops or overlook the SEU injected during the precharge phase. In this thesis, possible SEU sensitive nodes in dynamic flip-flops are re-examined and their window of vulnerability (WOV) is extended. Simulation results for SEU analysis in non-hardened dynamic flip-flops reveal that the last 55.3 % of the precharge time and a 100% evaluation time are affected by SEUs

Design of Soft Error Robust High Speed 64-bit Logarithmic Adder

Continuous scaling of the transistor size and reduction of the operating voltage have led to a significant performance improvement of integrated circuits. However, the vulnerability of the scaled circuits to transient data upsets or soft errors, which are caused by alpha particles and cosmic neutrons, has emerged as a major reliability concern. In this thesis, we have investigated the effects of soft errors in combinational circuits and proposed soft error detection techniques for high speed adders. In particular, we have proposed an area-efficient 64-bit soft error robust logarithmic adder (SRA). The adder employs the carry merge Sklansky adder architecture in which carries are generated every 4 bits. Since the particle-induced transient, which is often referred to as a single event transient (SET) typically lasts for 100~200 ps, the adder uses time redundancy by sampling the sum outputs twice. The sampling instances have been set at 110 ps apart. In contrast to the traditional time redundancy, which requires two clock cycles to generate a given output, the SRA generates an output in a single clock cycle. The sampled sum outputs are compared using a 64-bit XOR tree to detect any possible error. An energy efficient 4-input transmission gate based XOR logic is implemented to reduce the delay and the power in this case. The pseudo-static logic (PSL), which has the ability to recover from a particle induced transient, is used in the adder implementation. In comparison with the space redundant approach which requires hardware duplication for error detection, the SRA is 50% more area efficient. The proposed SRA is simulated for different operands with errors inserted at different nodes at the inputs, the carry merge tree, and the sum generation circuit. The simulation vectors are carefully chosen such that the SET is not masked by error masking mechanisms, which are inherently present in combinational circuits. Simulation results show that the proposed SRA is capable of detecting 77% of the errors. The undetected errors primarily result when the SET causes an even number of errors and when errors occur outside the sampling window

Single event upset hardened CMOS combinational logic and clock buffer design

A radiation strike on semiconductor device may lead to charge collection, which may manifest as a wrong logic level causing failure. Soft errors or Single Event Upsets (SEU) caused by radiation strikes are one of the main failure modes in a VLSI circuit. Previous work predicts that soft error rate may dominate the failure rate in VLSI circuit compared to all other failure modes put together. The issue of single event upsets (SEU) need to be addressed such that the failure rate of the chips dues to SEU is in the acceptable range. Memory circuits are designed to be error free with the help of error correction codes. Technology scaling is driving up the SEU rate of combinational logic and it is predicted that the soft error rate (SER) of combinational logic may dominate the SER of unpro-tected memory by the year 2011. Hence a robust combinational logic methodology must be designed for SEU hardening. Recent studies have also shown that clock distribution network is becoming increasingly vulnerable to radiation strike due to reduced capaci-tance at the clock leaf node. A strike on clock leaf node may propagate to many flip-flops increasing the system SER considerably. In this thesis we propose a novel method to improve the SER of the circuit by filtering single event upsets in the combinational logic and clock distribution network. Our ap-proach results in minimal circuit overhead and also requires minimal effort by the de-signer to implement the proposed method. In this thesis we focus on preventing the propagation of SEU rather than eliminating the SEU on each sensitive gate

Cross-Layer Resiliency Modeling and Optimization: A Device to Circuit Approach

The never ending demand for higher performance and lower power consumption pushes the VLSI industry to further scale the technology down. However, further downscaling of technology at nano-scale leads to major challenges. Reduced reliability is one of them, arising from multiple sources e.g. runtime variations, process variation, and transient errors. The objective of this thesis is to tackle unreliability with a cross layer approach from device up to circuit level

Study of Single Event Transient Error Mitigation

Single Event Transient (SET) errors in ground-level electronic devices are a growing concern in the radiation hardening field. However, effective SET mitigation technologies which satisfy ground-level demands such as generic, flexible, efficient, and fast, are limited. The classic Triple Modular Redundancy (TMR) method is the most well-known and popular technique in space and nuclear environment. But it leads to more than 200% area and power overheads, which is too costly to implement in ground-level applications. Meanwhile, the coding technique is extensively utilized to inhibit upset errors in storage cells, but the irregularity of combinatorial logics limits its use in SET mitigation. Therefore, SET mitigation techniques suitable for ground-level applications need to be addressed. Aware of the demands for SET mitigation techniques in ground-level applications, this thesis proposes two novel approaches based on the redundant wire and approximate logic techniques. The Redundant Wire is a SET mitigation technique. By selectively adding redundant wire connections, the technique can prohibit targeted transient faults from propagating on the fly. This thesis proposes a set of signature-based evaluation equations to efficiently estimate the protecting effect provided by each redundant wire candidates. Based on the estimated results, a greedy algorithm is used to insert the best candidate repeatedly. Simulation results substantiate that the evaluation equations can achieve up to 98% accuracy on average. Regarding protecting effects, the technique can mask 18.4% of the faults with a 4.3% area, 4.4% power, and 5.4% delay overhead on average. Overall, the quality of protecting results obtained are 2.8 times better than the previous work. Additionally, the impact of synthesis constraints and signature length are discussed. Approximate Logic is a partial TMR technique offering a trade-off between fault coverage and area overheads. The approximate logic consists of an under-approximate logic and an over-approximate logic. The under-approximate logic is a subset of the original min-terms and the over-approximate logic is a subset of the original max-terms. This thesis proposes a new algorithm for generating the two approximate logics. Through the generating process, the algorithm considers the intrinsic failure probabilities of each gate and utilizes a confidence interval estimate equation to minimize required computations. The technique is applied to two fault models, Stuck-at and SET, and the separate results are compared and discussed. The results show that the technique can reduce the error 75% with an area penalty of 46% on some circuits. The delay overheads of this technique are always two additional layers of logic. The two proposed SET mitigation techniques are both applicable to generic combinatorial logics and with high flexibility. The simulation shows promising SET mitigation ability. The proposed mitigation techniques provide designers more choices in developing reliable combinatorial logic in ground-level applications

Evaluating Architectural, Redundancy, and Implementation Strategies for Radiation Hardening of FinFET Integrated Circuits

In this article, authors explore radiation hardening techniques through the design of a test chip implemented in 16-nm FinFET technology, along with architectural and redundancy design space exploration of its modules. Nine variants of matrix multiplication were taped out and irradiated with neutrons. The results obtained from the neutron campaign revealed that the radiation-hardened variants present superior resiliency when either local or global triple modular redundancy (TMR) schemes are employed. Furthermore, simulation-based fault injection was utilized to validate the measurements and to explore the effects of different implementation strategies on failure rates. We further show that the interplay between these different implementation strategies is not trivial to capture and that synthesis optimizations can effectively break assumptions about the effectiveness of redundancy schemes

Robust low-power digital circuit design in nano-CMOS technologies

Device scaling has resulted in large scale integrated, high performance, low-power, and low cost systems. However the move towards sub-100 nm technology nodes has increased variability in device characteristics due to large process variations. Variability has severe implications on digital circuit design by causing timing uncertainties in combinational circuits, degrading yield and reliability of memory elements, and increasing power density due to slow scaling of supply voltage. Conventional design methods add large pessimistic safety margins to mitigate increased variability, however, they incur large power and performance loss as the combination of worst cases occurs very rarely. In-situ monitoring of timing failures provides an opportunity to dynamically tune safety margins in proportion to on-chip variability that can significantly minimize power and performance losses. We demonstrated by simulations two delay sensor designs to detect timing failures in advance that can be coupled with different compensation techniques such as voltage scaling, body biasing, or frequency scaling to avoid actual timing failures. Our simulation results using 45 nm and 32 nm technology BSIM4 models indicate significant reduction in total power consumption under temperature and statistical variations. Future work involves using dual sensing to avoid useless voltage scaling that incurs a speed loss. SRAM cache is the first victim of increased process variations that requires handcrafted design to meet area, power, and performance requirements. We have proposed novel 6 transistors (6T), 7 transistors (7T), and 8 transistors (8T)-SRAM cells that enable variability tolerant and low-power SRAM cache designs. Increased sense-amplifier offset voltage due to device mismatch arising from high variability increases delay and power consumption of SRAM design. We have proposed two novel design techniques to reduce offset voltage dependent delays providing a high speed low-power SRAM design. Increasing leakage currents in nano-CMOS technologies pose a major challenge to a low-power reliable design. We have investigated novel segmented supply voltage architecture to reduce leakage power of the SRAM caches since they occupy bulk of the total chip area and power. Future work involves developing leakage reduction methods for the combination logic designs including SRAM peripherals