Impact of parameter variations on circuits and microarchitecture

Parameter variations, which are increasing along with advances in process technologies, affect both timing and power. Variability must be considered at both the circuit and microarchitectural design levels to keep pace with performance scaling and to keep power consumption within reasonable limits. This article presents an overview of the main sources of variability and surveys variation-tolerant circuit and microarchitectural approaches.Peer ReviewedPostprint (published version

Analysis and equalization of data-dependent jitter

Data-dependent jitter limits the bit-error rate (BER) performance of broadband communication systems and aggravates synchronization in phase- and delay-locked loops used for data recovery. A method for calculating the data-dependent jitter in broadband systems from the pulse response is discussed. The impact of jitter on conventional clock and data recovery circuits is studied in the time and frequency domain. The deterministic nature of data-dependent jitter suggests equalization techniques suitable for high-speed circuits. Two equalizer circuit implementations are presented. The first is a SiGe clock and data recovery circuit modified to incorporate a deterministic jitter equalizer. This circuit demonstrates the reduction of jitter in the recovered clock. The second circuit is a MOS implementation of a jitter equalizer with independent control of the rising and falling edge timing. This equalizer demonstrates improvement of the timing margins that achieve 10/sup -12/ BER from 30 to 52 ps at 10 Gb/s

Modeling of thermally induced skew variations in clock distribution network

Clock distribution network is sensitive to large thermal gradients on the die as the performance of both clock buffers and interconnects are affected by temperature. A robust clock network design relies on the accurate analysis of clock skew subject to temperature variations. In this work, we address the problem of thermally induced clock skew modeling in nanometer CMOS technologies. The complex thermal behavior of both buffers and interconnects are taken into account. In addition, our characterization of the temperature effect on buffers and interconnects provides valuable insight to designers about the potential impact of thermal variations on clock networks. The use of industrial standard data format in the interface allows our tool to be easily integrated into existing design flow

Statistical circuit simulations - from ‘atomistic’ compact models to statistical standard cell characterisation

This thesis describes the development and application of statistical circuit simulation methodologies to analyse digital circuits subject to intrinsic parameter fluctuations. The specific nature of intrinsic parameter fluctuations are discussed, and we explain the crucial importance to the semiconductor industry of developing design tools which accurately account for their effects. Current work in the area is reviewed, and three important factors are made clear: any statistical circuit simulation methodology must be based on physically correct, predictive models of device variability; the statistical compact models describing device operation must be characterised for accurate transient analysis of circuits; analysis must be carried out on realistic circuit components. Improving on previous efforts in the field, we posit a statistical circuit simulation methodology which accounts for all three of these factors. The established 3-D Glasgow atomistic simulator is employed to predict electrical characteristics for devices aimed at digital circuit applications, with gate lengths from 35 nm to 13 nm. Using these electrical characteristics, extraction of BSIM4 compact models is carried out and their accuracy in performing transient analysis using SPICE is validated against well characterised mixed-mode TCAD simulation results for 35 nm devices. Static d.c. simulations are performed to test the methodology, and a useful analytic model to predict hard logic fault limitations on CMOS supply voltage scaling is derived as part of this work. Using our toolset, the effect of statistical variability introduced by random discrete dopants on the dynamic behaviour of inverters is studied in detail. As devices scaled, dynamic noise margin variation of an inverter is increased and higher output load or input slew rate improves the noise margins and its variation. Intrinsic delay variation based on CV/I delay metric is also compared using ION and IEFF definitions where the best estimate is obtained when considering ION and input transition time variations. Critical delay distribution of a path is also investigated where it is shown non-Gaussian. Finally, the impact of the cell input slew rate definition on the accuracy of the inverter cell timing characterisation in NLDM format is investigated

Noise shaping Asynchronous SAR ADC based time to digital converter

Time-to-digital converters (TDCs) are key elements for the digitization of timing information in modern mixed-signal circuits such as digital PLLs, DLLs, ADCs, and on-chip jitter-monitoring circuits. Especially, high-resolution TDCs are increasingly employed in on-chip timing tests, such as jitter and clock skew measurements, as advanced fabrication technologies allow fine on-chip time resolutions. Its main purpose is to quantize the time interval of a pulse signal or the time interval between the rising edges of two clock signals. Similarly to ADCs, the performance of TDCs are also primarily characterized by Resolution, Sampling Rate, FOM, SNDR, Dynamic Range and DNL/INL. This work proposes and demonstrates 2nd order noise shaping Asynchronous SAR ADC based TDC architecture with highest resolution of 0.25 ps among current state of art designs with respect to post-layout simulation results. This circuit is a combination of low power/High Resolution 2nd Order Noise Shaped Asynchronous SAR ADC backend with simple Time to Amplitude converter (TAC) front-end and is implemented in 40nm CMOS technology. Additionally, special emphasis is given on the discussion on various current state of art TDC architectures.Electrical and Computer Engineerin

Robust low-power digital circuit design in nano-CMOS technologies

Device scaling has resulted in large scale integrated, high performance, low-power, and low cost systems. However the move towards sub-100 nm technology nodes has increased variability in device characteristics due to large process variations. Variability has severe implications on digital circuit design by causing timing uncertainties in combinational circuits, degrading yield and reliability of memory elements, and increasing power density due to slow scaling of supply voltage. Conventional design methods add large pessimistic safety margins to mitigate increased variability, however, they incur large power and performance loss as the combination of worst cases occurs very rarely. In-situ monitoring of timing failures provides an opportunity to dynamically tune safety margins in proportion to on-chip variability that can significantly minimize power and performance losses. We demonstrated by simulations two delay sensor designs to detect timing failures in advance that can be coupled with different compensation techniques such as voltage scaling, body biasing, or frequency scaling to avoid actual timing failures. Our simulation results using 45 nm and 32 nm technology BSIM4 models indicate significant reduction in total power consumption under temperature and statistical variations. Future work involves using dual sensing to avoid useless voltage scaling that incurs a speed loss. SRAM cache is the first victim of increased process variations that requires handcrafted design to meet area, power, and performance requirements. We have proposed novel 6 transistors (6T), 7 transistors (7T), and 8 transistors (8T)-SRAM cells that enable variability tolerant and low-power SRAM cache designs. Increased sense-amplifier offset voltage due to device mismatch arising from high variability increases delay and power consumption of SRAM design. We have proposed two novel design techniques to reduce offset voltage dependent delays providing a high speed low-power SRAM design. Increasing leakage currents in nano-CMOS technologies pose a major challenge to a low-power reliable design. We have investigated novel segmented supply voltage architecture to reduce leakage power of the SRAM caches since they occupy bulk of the total chip area and power. Future work involves developing leakage reduction methods for the combination logic designs including SRAM peripherals

IC design for reliability

textAs the feature size of integrated circuits goes down to the nanometer scale, transient and permanent reliability issues are becoming a significant concern for circuit designers. Traditionally, the reliability issues were mostly handled at the device level as a device engineering problem. However, the increasing severity of reliability challenges and higher error rates due to transient upsets favor higher-level design for reliability (DFR). In this work, we develop several methods for DFR at the circuit level. A major source of transient errors is the single event upset (SEU). SEUs are caused by high-energy particles present in the cosmic rays or emitted by radioactive contaminants in the chip packaging materials. When these particles hit a N+/P+ depletion region of an MOS transistor, they may generate a temporary logic fault. Depending on where the MOS transistor is located and what state the circuit is at, an SEU may result in a circuit-level error. We analyze SEUs both in combinational logic and memories (SRAM). For combinational logic circuit, we propose FASER, a Fast Analysis tool of Soft ERror susceptibility for cell-based designs. The efficiency of FASER is achieved through its static and vector-less nature. In order to evaluate the impact of SEU on SRAM, a theory for estimating dynamic noise margins is developed analytically. The results allow predicting the transient error susceptibility of an SRAM cell using a closedform expression. Among the many permanent failure mechanisms that include time-dependent oxide breakdown (TDDB), electro-migration (EM), hot carrier effect (HCE), and negative bias temperature instability (NBTI), NBTI has recently become important. Therefore, the main focus of our work is NBTI. NBTI occurs when the gate of PMOS is negatively biased. The voltage stress across the gate generates interface traps, which degrade the threshold voltage of PMOS. The degraded PMOS may eventually fail to meet timing requirement and cause functional errors. NBTI becomes severe at elevated temperatures. In this dissertation, we propose a NBTI degradation model that takes into account the temperature variation on the chip and gives the accurate estimation of the degraded threshold voltage. In order to account for the degradation of devices, traditional design methods add guard-bands to ensure that the circuit will function properly during its lifetime. However, the worst-case based guard-bands lead to significant penalty in performance. In this dissertation, we propose an effective macromodel-based reliability tracking and management framework, based on a hybrid network of on-chip sensors, consisting of temperature sensors and ring oscillators. The model is concerned specifically with NBTIinduced transistor aging. The key feature of our work, in contrast to the traditional tracking techniques that rely solely on direct measurement of the increase of threshold voltage or circuit delay, is an explicit macromodel which maps operating temperature to circuit degradation (the increase of circuit delay). The macromodel allows for costeffective tracking of reliability using temperature sensors and is also essential for enabling the control loop of the reliability management system. The developed methods improve the over-conservatism of the device-level, worstcase reliability estimation techniques. As the severity of reliability challenges continue to grow with technology scaling, it will become more important for circuit designers/CAD tools to be equipped with the developed methods.Electrical and Computer Engineerin