Modern Applications of Electrostatics and Dielectrics

Electrostatics and dielectric materials have important applications in modern society. As such, they require improved characteristics. More and more equipment needs to operate at high frequency, high voltage, high temperature, and other harsh conditions. This book presents an overview of modern applications of electrostatics and dielectrics as well as research progress in the field

Trapping of gold anions in a linear Paul trap

In order to demonstrate laser cooling on negatively charged ions, it is necessary to confine the ions in a region free of strong magnetic fields. In the course of this thesis, the pre-existing design of a linear Paul trap was modified and taken into operation. The new design possesses two additional end cap electrodes whose shape provides effective axial confinement without blocking optical access to the trapped particles. The influence of these end cap electrodes on the trapping potential was simulated and compared to experimental results. Measurements with AU- ions show that the trap allows storage of ions for multiple hours. Analysis ofthe storage time suggests that the loading process heats up the trapped ions. The lifetime τHot of the hot ions was determined to be 23(3) min. After thermalization, the lifetime increases to 75(2) min. Measurements of the ion cloud’s radius provide an estimation of the equilibrium temperature T∞ ≈5000 K. The experimentally determined time constant of the cooling process is τcool = 41:6(4) s

Analysis of electric propulsion electrical power conditioning component technology. Volume 1 - Data bank Final report

Analysis of electric propulsion electric power conditioning component technology - data revie

Development of a novel titanium thermal ionization cavity source for electromagnetic radioisotope separation of samarium and other lanthanide isotopes

An available supply of high specific activity radioisotopes was identified by the Department of Energy as a critical priority to the development and eventual deployment of next-generation medical diagnostic and cancer therapy tools. A radioisotope mass separator, located at the Missouri University Research Reactor (MURR) Center, was constructed to provide radioactive ion beams for the separation and production of high specific activity lanthanides used in radiopharmacology. A novel thermal ionization cavity (TIC) source capable of seamlessly integrating the irradiation of reactor produced targets with isotope separations was developed. Isotope separations of irradiated samples of samarium with low levels of radioactivity will be performed to assist in the design of an electromagnetic separator facility with commercial scale. To this end, experimental data has been acquired with a custom ionization source designed to operate inside of a constrained set of parameters. These experiments led to the first reported case of a lanthanide ion beam to have been produced from a TIC source constructed completely from titanium. Investigations of the working parameters driving the performance of the source are discussed. Initial experiments with samarium ion beams transmitted through the ion optics of the separator system are also discussed. This work demonstrates the applicability of titanium in the construction of a TIC source designed for separations of radioactive lanthanides.Includes bibliographical references

Effects of implementation of decaborane ions in silicon

The next generations of Si microelectronic devices will require ultra shallow p-type junctions formed by implantation of B ions with energies below 1 keV, at which available beam currents are severely limited by space charge effects. To solve this problem, decaborane (B10H14) cluster ion implantation has been suggested as an attractive alternative to conventional B implants, because one decaborane ion implants ten B atoms simultaneously and each of the B atoms only carries approximately 1/11 of the total ion energy. Thus the same implantation depth and dose as with monomer B ions can be obtained using decaborane ions but with 10 times less charge and ten times higher energy. In this dissertation research, various effects of implantation of decaborane cluster ions in silicon were studied, using an experimental ion implanter in the Ion Beam and Thin Film Research Laboratory at NJIT. Secondary Ion Mass Spectrometry (SIMS) depth profiles of boron and hydrogen in decaborane-implanted samples were measured before and after thermal activation annealing and compared to that in the control samples. Shallow p-type junction could be achieved with decaborane implantation. The co-implanted hydrogen diffused out almost entirely after annealing and hence is expected to have a negligible effect on the device performance. Transient enhanced diffusion (TED) of B atoms in Si implanted with mass analyzed decaborane ions of three energies were measured and compared to that of B atoms in Si implanted with B+ ions of equivalent B energy and dose. The resultsdemonstrated that implantation of B with decaborane cluster ions led to essentially the same amount of TED of B in Si as that in Si implanted with atomic B+ ions of the equivalent energy and dose. The sputtering yields of Si with B in the form of decaborane clusters were measured and compared to those for boron monomer ions, estimated using an empirical formula. The surface morphology of amorphous Si, crystalline Si and Ta film irradiated with energetic decaborane ions and argon ions were studied using Atomic Force Microscopy (AFM). Results of surface roughness and Power Spectral Density (PSD) analysis show that decaborane cluster ions smooth rather than roughen these surfaces. Molecular Dynamics (MD) simulations have been performed to compare impact effects on Si target by B monomers and B10 clusters at the same energy per B atom. B depth profiles were found to be similar for B atoms implanted with B10 clusters and with B monomers. The crater formation, a unique feature of cluster impacts, was also observed on the Si surface impacted by a B10 cluster. The calculated sputtering yield of Si (the number of ejected Si atoms per incident B) was much larger with B10 clusters than with B monomers and also larger than the experimental values. The results of this research confirm that decaborane implantation is a viable alternative to low energy B implantation for ultra shallow p-type junction formation. These results also contribute to the knowledge base of the technology of ultra shallow B doping in CMOS devices and will help to better understand cluster-solid interactions in general

High-resolution Doppler laser spectroscopy of the laser cooling candidate La^-

The bound-bound transition from the 5d26s2 3Fe2 ground state to the 5d6s26p 3D° 2 excited state in negative lanthanum has been proposed as a candidate for laser cooling, which has not yet been achieved for negative ions. Anion laser cooling holds the potential to allow the production of ultracold ensembles of any negatively charged species. In this work the aforementioned transition was studied in a beam of negative La ions by high-resolution laser spectroscopy. The center-of-gravity frequency of the transition was measured to be 96.592 80(10) THz. Seven of the nine expected hyperfine structure resonances were resolved. The observed peaks were unambiguously assigned to the predicted hyperfine transitions by a fit. From the determined hyperfine structure for this transition it was concluded that only three lasers would be required to cool and re-pump all hyperfine levels. Furthermore, the observed relative transition amplitudes suggest that in resonance the transitions are saturated at a laser power of 45 Wm-2. A rough estimate of the transition cross section confirms that La- is a promising candidate for the first laser cooling of negative ions