An asymmetrical bulk-modified composite MOS transistor with enhanced linearity

In this work, an asymmetrical bulk-linearized composite MOSFET is presented, with an enhanced linear range and an equivalent saturation voltage of up to several hundred mV even in weak inversion, allowing to implement large MOS resistors. Some preliminary measurements are presented, as well as 150MΩ and 200MΩ equivalent resistors simulations, with a linear range up to 1.5V. A low frequency, 40dB gain, fully integrated cardiac sensing channel filter/amplifier is also shown. Taking advantage of the proposed technique, the circuit consumes only 25nA of supply current.Agencia Nacional de Investigación e Innovació

A Self-biased Current Source, using an Asymmetric Bulk-modified MOS Composite Transistor

In this work a new topology for a self-biased current reference, based on an asymmetric bulk-modified MOS (ABM) composite transistor is presented. Two current references based in this technique were designed: a 13.5nA current reference in a 1.5μm CMOS technology, and a 100nA current reference in a 0.18μm CMOS technology. The latter was designed to minimize the temperature dependence of the output current; the result was less than 5% from 0°C to 100°C, which is a very good result in comparison to other reported similar current references.Agencia Nacional de Investigación e Innovació

Clock-Feedthrough Compensation in MOS Sample-and-Hold Circuits

All MOS sample-and-hold circuits suffer to a greater or lesser extent from clock-feedthrough (CLFT), also called charge-injection. During the transition from sample to hold mode, charge is transferred from an MOS transistor switch onto the hold capacitor, thus the name charge-injection. This error can lead to considerable voltage change across the capacitor, and predicting the extent of the induced error potentials is important to circuit designers. Previous studies have shown a considerable dependency of CLFT on signal voltage, circuit impedances, clock amplitude and clock fall-time. The focus of this work was on the signal dependency of the CLFT error and on the CLFT induced signal distortion in open-loop sample-and-hold circuits. CLFT was found to have a strongly non-linear, signal dependent, component, which may cause considerable distortion of the sampled signal. The parameters influencing this distortion were established. It was discovered that distortion could be reduced by more than 20dB through careful adjustment of the clock fall-rate. Several circuit solutions that can help reduce the level of distortion arising from CLFT are presented. These circuits can also reduce the absolute level of CLFT. Simulations showed their effectiveness, which was also proven in silicon. The CLFT reduction methods used in these circuits are easily transferable to other switched-capacitor circuits and are suitable for applications where space is at a premium (as, for example, in analogue neural networks). A new saturation mode contribution to CLFT was found. It is shown to give rise to increased CLFT under high injection conditions

Very large time constant Gm-C Filters

In this study a set of tools for the design of fully integrated transconductor-capacitor (Gm-C) filters, with very large time constants and current consumption under one micro-Ampere are presented. The selected application is a 2nd order bandpass-filter-amplifier, with a gain of 400 from 0.5 to 7Hz, carrying out the signal conditioning of a piezoelectric accelerometer which is part of an implantable cardiac pacemaker. The main challenge is to achieve very large time constants, without using any discrete external component. The chosen circuit technique to fulfill the requirement is series-parallel current division applied to standard symmetrical transconductors (OTAs). These circuits have demonstrated to be an excellent solution regarding their occupied area, power consumption, noise, linearity, and particularly offset. OTAs as low as 33pS -equivalent to a 30G resistor-, with up to 1V linear range, and input referred offset of a few mV, were designed, fabricated in a standard 0.8 micron CMOS technology, and tested. The application requires the series-parallel association of a large number of transistors, and the use of bias currents as low as a few pico-Amperes, which is not very common in analog integrated circuits. In this case the designer should employ maximum care in the selection of the transistor models to be used. A central aspect of this thesis was also to evaluate and develop noise and offset estimation models which was not obvious in the very beginning of the research. In the first two chapters an introduction to the target application is presented, and several MOS transistor characteristics in terms of the inversion coefficient -using the ACM transistor model- are evaluated. In chapter 3 it is discussed whether the usual flicker and thermal noise models are consistent regarding series-parallel association, and adequately represent the expected noise behavior under different bias conditions. A consistent, physics-based, one-equation-all-regions model for flicker noise in the MOS transistor is then presented. Several noise measurements are included demonstrating that the new model accurately fits widely different bias situations. A new model for mismatch offset in MOS transistors is presented, as a corollary of the flicker noise analysis. Finally, the correlation between flicker noise and mismatch offset, that can be seen as a DC noise, is shown. In chapter 4, the design of OTAs with an extended linear range, and very low transconductance, using series-parallel current division is presented. Precise tools are introduced for the estimation of noise and mismatch offset in series-parallel current mirrors, that are shown to help in the reduction of inaccuracies in the copy of currents with a large copy factor. The design and measurement of several OTA examples are presented. In chapter 5, the developed tools, and the OTAs shown, are employed in the design of the above mentioned filter for the piezoelectric accelerometer. A general methodology for the design of Gm-C filters with similar characteristics is established. The filter was fabricated and tested, successfully operating with a total power consumption of 233nA, up to a 2V power supply, with an input noise and mismatch offset of 2-4 Vrms, and 18 V respectively. To summarize the main results obtained were: The development of a new flicker noise model, the study of the effect of mismatch regarding series-parallel association, a new design methodology for OTAs and Gm-C filters. It is our hope that this constitutes a helpful set of tools for the circuit designer.En esta tesis se presenta un conjunto de herramientas para el diseño de circuitos integrados que implementan filtros transconductor-capacitor (Gm-C), de muy altas constantes de tiempo, con bajo ruido, y consumo de corriente por debajo del micro-Ampere. Como ejemplo de aplicación se toma un amplificador-pasabanda 2º orden, de ganancia 400 en la banda de 0.5 a 7Hz, que realiza el acondicionamiento de señal de un acelerómetro piezoeléctrico a ser empleado en un marcapasos implantable. El principal desafío es realizar en dicho filtro de tiempo continuo, muy altas constantes de tiempo sin usar componentes externos. La técnica elegida para alcanzar tal objetivo es la división serie-paralelo de corriente en transconductores (OTAs) simétricos estándar. Estos circuitos demostraron ser una excelente solución en cuanto al área ocupada, su consumo, ruido, linealidad, y en particular offset. Se diseñaron, fabricaron, y midieron, OTAs hasta 33pS -equivalente a una resistencia de 30G -, con hasta 1V de rango de lineal, y offset a la entrada de algunos mV, utilizando una tecnología CMOS de 0.8 micras de largo mínimo de canal. La aplicación requiere la asociación serie-paralelo de un gran número de transistores, y polarización con corrientes de hasta pico-Amperes, lo que constituye una situación poco frecuente en circuitos integrados analógicos. En este marco el diseñador debe elegir los modelos de transistor con sumo cuidado. Un aspecto central de esta tesis es también, el estudio y presentación de modelos adecuados de ruido y offset, que no resultan obvios al principio. En los primeros dos capítulos se realiza una introducción y se revisa, utilizando el modelo ACM, diferentes características del transistor MOS en función del nivel de inversión. En el capítulo 3 revisa la pertinencia y consistencia frente a la asociación serie-paralelo, de los modelos usuales de ruido de flicker o 1/f, y térmico. Luego se presenta, incluyendo medidas, un nuevo modelo físico, consistente, simple, y válido en todas las regiones de operación del transistor MOS, para el ruido de flicker. Como corolario a este estudio se presenta un nuevo modelo para estimar el desapareo entre transistores, en función no solo de la geometría, pero también de la polarización. Se demuestra la correlación, debido a su origen físico análogo, entre el ruido de flicker y el offset por desapareo que puede ser visto como un ruido en DC. En el capítulo 4 se presenta el diseño de OTAs con rango de linealidad extendido, y muy baja transconductancia, utilizando división serie-paralelo de corriente. Se presentan herramientas precisas para la estimación de offset y ruido y se demuestra la utilidad de la técnica para reducir el offset en espejos de corriente. Se presenta el diseño y medida de diversos OTAs. En el capítulo 5, las herramientas desarrolladas, y los OTAs presentados, son empleados en el diseño del filtro descripto para un acelerómetro piezoeléctrico. Se establece una metodología general para el diseño de filtros Gm-C con características similares. El filtro se fabricó y midió, operando en forma satisfactoria, con un consumo total de 230nA y hasta los 2V de tensión de alimentación, con ruido y offset a la entrada de tan solo 2-4 Vrms, y 18 V respectivamente. El desarrollo de un nuevo modelo de ruido 1/f para el transistor MOS, el estudio de la influencia del offset frente a la asociación serie-paralelo y su aplicación en OTAs, la metodología de diseño empleada, la demostración del uso de técnicas novedosas en una aplicación como la elegida que tiene relevancia tecnológica e interés académico; esperamos que todo ello constituya una contribución valiosa para la comunidad científica en microelectrónica y un conjunto de herramientas de utilidad para el diseño de circuitos

Reconfigurable Receiver Front-Ends for Advanced Telecommunication Technologies

The exponential growth of converging technologies, including augmented reality, autonomous vehicles, machine-to-machine and machine-to-human interactions, biomedical and environmental sensory systems, and artificial intelligence, is driving the need for robust infrastructural systems capable of handling vast data volumes between end users and service providers. This demand has prompted a significant evolution in wireless communication, with 5G and subsequent generations requiring exponentially improved spectral and energy efficiency compared to their predecessors. Achieving this entails intricate strategies such as advanced digital modulations, broader channel bandwidths, complex spectrum sharing, and carrier aggregation scenarios. A particularly challenging aspect arises in the form of non-contiguous aggregation of up to six carrier components across the frequency range 1 (FR1). This necessitates receiver front-ends to effectively reject out-of-band (OOB) interferences while maintaining high-performance in-band (IB) operation. Reconfigurability becomes pivotal in such dynamic environments, where frequency resource allocation, signal strength, and interference levels continuously change. Software-defined radios (SDRs) and cognitive radios (CRs) emerge as solutions, with direct RF-sampling receivers offering a suitable architecture in which the frequency translation is entirely performed in digital domain to avoid analog mixing issues. Moreover, direct RF- sampling receivers facilitate spectrum observation, which is crucial to identify free zones, and detect interferences. Acoustic and distributed filters offer impressive dynamic range and sharp roll off characteristics, but their bulkiness and lack of electronic adjustment capabilities limit their practicality. Active filters, on the other hand, present opportunities for integration in advanced CMOS technology, addressing size constraints and providing versatile programmability. However, concerns about power consumption, noise generation, and linearity in active filters require careful consideration.This thesis primarily focuses on the design and implementation of a low-voltage, low-power RFFE tailored for direct sampling receivers in 5G FR1 applications. The RFFE consists of a balun low-noise amplifier (LNA), a Q-enhanced filter, and a programmable gain amplifier (PGA). The balun-LNA employs noise cancellation, current reuse, and gm boosting for wideband gain and input impedance matching. Leveraging FD-SOI technology allows for programmable gain and linearity via body biasing. The LNA's operational state ranges between high-performance and high-tolerance modes, which are apt for sensitivityand blocking tests, respectively. The Q-enhanced filter adopts noise-cancelling, current-reuse, and programmable Gm-cells to realize a fourth-order response using two resonators. The fourth-order filter response is achieved by subtracting the individual response of these resonators. Compared to cascaded and magnetically coupled fourth-order filters, this technique maintains the large dynamic range of second-order resonators. Fabricated in 22-nm FD-SOI technology, the RFFE achieves 1%-40% fractional bandwidth (FBW) adjustability from 1.7 GHz to 6.4 GHz, 4.6 dB noise figure (NF) and an OOB third-order intermodulation intercept point (IIP3) of 22 dBm. Furthermore, concerning the implementation uncertainties and potential variations of temperature and supply voltage, design margins have been considered and a hybrid calibration scheme is introduced. A combination of on-chip and off-chip calibration based on noise response is employed to effectively adjust the quality factors, Gm-cells, and resonance frequencies, ensuring desired bandpass response. To optimize and accelerate the calibration process, a reinforcement learning (RL) agent is used.Anticipating future trends, the concept of the Q-enhanced filter extends to a multiple-mode filter for 6G upper mid-band applications. Covering the frequency range from 8 to 20 GHz, this RFFE can be configured as a fourth-order dual-band filter, two bandpass filters (BPFs) with an OOB notch, or a BPF with an IB notch. In cognitive radios, the filter’s transmission zeros can be positioned with respect to the carrier frequencies of interfering signals to yield over 50 dB blocker rejection

Millimeter-Wave Concurrent Dual-Band BiCMOS RFICs for Radar and Communication RF Front-End

The recent advancement in silicon-based technologies has offered the opportunity for the development of highly-integrated circuits and systems in the millimeter-wave frequency regime. In particular, the demand for high performance multi-band multi-mode radar and communication systems built on silicon-based technologies has been increased dramatically for both military and commercial applications. This dissertation presents the design and implementation of advanced millimeter-wave front-end circuits in SiGe BiCMOS process including a transmit/receive switch module with integrated calibration function, low noise amplifier, and power amplifier for millimeter-wave concurrent dual-band dual-polarization radars and communication systems. The proposed circuits designed for the concurrent dual-band dual-polarization radars and communication systems were fabricated using 0.18-μm BiCMOS process resulting in novel circuit architectures for concurrent multi-band operation. The developed concurrent dual-band circuits fabricated on 0.18-μm BiCMOS process include the T/R/Calibration switch module for digital beam forming array system at 24.5/35 GHz, concurrent dual-band low noise amplifiers at 44/60 GHz, and concurrent dual-band power amplifier at 44/60 GHz. With having all the design frequencies closely spaced to each other showing the frequency ratio below 1.43, the designed circuits provided the integrated dual-band filtering function with Q-enhanced frequency responses. Inspired by the composite right/left- handed metamaterial transmission line approaches, the integrated Q-enhanced filtering sub-circuits provided unprecedented dual-band filtering capability. The new concurrent dual-band dual-mode circuits and system architecture can provide enhanced radar and communication system performance with extended coverage, better image synthesis and target locating by the enhanced diversity. The circuit level hardware research conducted in this dissertation is expected to contribute to enhance the performance of multi-band multi-mode imaging, sensing, and communication array systems

DYNAMIC MAGNETIC EFFECTS IN AMORPHOUS MICROWIRES FOR SENSORS AND CODING APPLICATIONS

This work is devoted to the study of the dynamic properties of magnetic amorphous wires, in particular, glass-coated microwires, which have small diameters (5-30 microns), outstanding soft magnetic behaviour with a high permeability and low coercivity, yet, possess a well-defined magnetic structure. First part of my PhD research has been devoted to the investigation of a bi-stable magnetisation reversal in glass-coated amorphous microwires. In contrast to traditional approaches, where characteristics of the magnetisation reversal are analysed as a consequence of the eddy current effect, l have applied stochastic methods for modelling the remagnetisation reversal in the microwires with axial anisotropy. While the eddy current approach, widely discussed in literature, was based on the single domain model, proposed stochastic approach takes into account a multi-domain state of studied samples. A modified stochastic Neel-Brown model of the magnetisation reversal has been proposed enabling the explanation of number of characteristic parameters of the microwires with axial magnetisation. Such important parameters of Barkhausen discontinuity as a mean switching field and a standard deviation of the switching field distribution have been investigated experimentally for understanding the influence of extrinsic factors such as a slew rate of the alternating magnetic field on applications operation. A deep understanding of the remagnetisation process in amorphous the microwires with axial anisotropy was successfully applied in development of a new type of the remote magnetic interrogation system. My reading system allows the large Barkhausen jump to be detected without actual contact between the magnetic microwire and the magnetic field detector. Experiments show that the detection will be possible at a distance of approximately 100-150 mm from the detecting sensor. A very low cost and easily repetitive amorphous microwires with axial anisotropy are . incontrovertibly best materials for Electronic Article Surveillance (EAS) applications. During the study of the microwires with axial anisotropy and development of the application based on them, I took part in the investigation of unusual coding methods of the amorphous microwires using a localised laser annealing treatment. This treatment produces a multi-pulse code within the wire and therefore adds to the information contained within the wire, improving reliability and security. I developed and used a magnetic interrogation system allowing an accurate and reliable test and analysis of the studied samples. The second part of my PhD research has included investigations of microwires with circumferential and helical anisotropies. The main interest in these materials is due to their applications for high-performance magnetic and stress sensors. Within this research project, the microwires with circumferential/helical anisotropy have been studied in a broad range of frequencies. A number of dynamic effects have been experimentally obtained and analysed. In particular, a detailed investigation of dynamic circular hysteresis (10kHz-300kHz) has been carried out allowing explanation of different behaviour of the materials with circumferential/helical anisotropy at different frequencies. The experimental curves are proposed to be analysed in terms of field dependence of characteristic permeabilities: domain wall displacements (reversible and irreversible) and magnetisation rotation. It was established that these permeabilities have different field behaviour. That explains different MI patterns at relatively low frequencies (less than a few MHz) and relatively high frequencies (more than 10 MHz). Further, some special features of the Magneto-Impedance effect in the microwires with a circumferential anisotropy such as off-diagonal impedance and microwave impedance have been considered. In this research, the former presents a considerable interest for development of linear magnetic sensors and the latter can find application in tuneable microwave materials and devices. As a result of this study several types of linear, bi-directional MI sensors were developed. I also developed new MI sensing approaches (such as off-diagonal response) and a new high performance detection technique allowing us to improve sensitivity, bandwidth, and linearity at low cost and simple construction .. The last part of the PhD research has been devoted to an investigation of the stress-impedance in the ultra high-frequency (UHF) band (300MHz-3 GHz). Based on the experimental investigation, a new type of a stress-sensitive composite material is proposed. The microwave effective permittivity of such material depends on mechanical stresses. These composite materials opens up new possibilities for remote monitoring of stress with the use of microwave "free-space" techniques. This kind of composite material can be characterised as a "sensing medium", which images the mechanical stress distribution inside construction or on its surface

CMOS and SOI CMOS FET-based gas sensors

In recent years, there has been considerable interest in the use of gas/vapour monitors and electronic nose instruments by the environmental, automotive and medical industries. These applications require low cost and low power sensors with high yield and high reproducibility, with an annual prospective market of 1 million pounds. Present device and sensor technologies suffer a major limitation, their incompatibility with a standard silicon CMOS process. These technologies have either operating/annealing temperatures unsuited for MOSFET operation or an inappropriate sensing mechanism. The aim of this research is the development of CMOS compatible gas/vapour sensors, with a low cost of fabrication, high device repeatability and, in the future, transducer sensor amalgamation. Two novel approaches have been applied, utilising bulk CMOS and SOI BiCMOS. The bulk CMOS designs use a MOSFET sensing structure, with an active polymeric gate material, operating at low temperatures (<100°C), based on an array device of four elements, with channel lengths of 10 μm or 5 μm. The SOI designs exploit a MOSFET heater with a chemoresistive or chemFET sensing structure, on a thin membrane formed by the epi-taxial layer. By applying SOI technology, the first use in gas sensor applications, operating temperatures of up to 300 °C can be achieved at a power cost of only 35 mW (simulated). Full characterisation of the bulk CMOS chemFET sensors has been performed using electrochemically deposited (e.g. poly(pyrrole)/BSA)) and composite polymers (e.g. poly(9-vinylcarbazole)) to ethanol and toluene vapour in air. In addition, environmental factors (humidity and temperature) on the response and baseline were investigated. This was carried out using a newly developed flow injection analysis test station, which conditions the test vapour to precise analyte (<15 PPM of toluene) and water concentrations at a fixed temperature (RT to 105°C +- 0.1), with the sensor characterised by either I-V or constant current instrumentation. N-channel chemFET sensors operated at constant current (10 μA) with electrochemically deposited and composite polymers showed sensitivities of up to 1.1 μV/PPM and 4.0 μV/PPM to toluene vapour and to 1.1 μV/PPM and 0.4 μV/PPM for ethanol vapour, respectively, with detection limits of <20 PPM and <100 PPM to toluene and <20 PPM and 10+ PPM to ethanol vapour (limited by baseline noise), respectively. These responses followed either a power law (composite polymers) or a modified Langmuir isotherm model (electrochemically deposited polymers) with analyte concentration. It is proposed that this reaction-rate limited response is due to an alteration in polymers work function by either a partial charge transfer from the analyte or a swelling effect (polymer expansion). Increasing humidity caused, in nearly all cases a reduction in relative baseline, possible by dipole formation at the gate oxide surface. For the response, increasing humidity had no effect on sensors with composite polymers and an increase for sensors with electrochemically-deposited polymers. Higher temperatures caused a reduction in baseline signal, by a thermal expansion of the polymer, and a reduction in response explained by the analyte boiling point model describing a reduction in the bulk solubility of the polymer. Electrical and thermal characterisation of the SOI heaters, fabricated by the MATRA process, has been performed. I-V measurements show a reduction in drain current for a MOSFET after back-etching, by a degradation of the carrier mobility. Dynamic measurement showed a two stage thermal response (dual exponential), as the membrane reaching equilibrium (100-200 ms) followed by the bulk (1-2 s). A temperature coefficient of 8 mW/°C was measured, this was significantly higher than expected from simulations, explained by the membrane being only partially formed. Diode and resistive temperature sensors showed detection limits under 0.1°C and shown to measure a modulated heater output of less than 1°C at frequencies higher than 10Hz. The principal research objectives have been achieved, although further work on the SOI device is required. The results and theories presented in this study should provide a useful contribution to this research area