Modified Level Restorers Using Current Sink and Current Source Inverter Structures for BBL-PT Full Adder

Full adder is an essential component for the design and development of all types of processors like digital signal processors (DSP), microprocessors etc. In most of these systems adder lies in the critical path that affects the overall speed of the system. So enhancing the performance of the 1-bit full adder cell is a significant goal. In this paper, we proposed two modified level restorers using current sink and current source inverter structures for branch-based logic and pass-transistor (BBL-PT) full adder [1]. In BBL-PT full adder, there lies a drawback i.e. voltage step existence that could be eliminated in the proposed logics by using the current sink inverter and current source inverter structures. The proposed full adders are compared with the two standard and well-known logic styles, i.e. conventional static CMOS logic and Complementary Pass transistor Logic (CPL), demonstrated the good delay performance. The implementation of 8-bit ripple carry adder based on proposed full adders are finally demonstrated. The CPL 8-bit RCA and as well as the proposed ones is having better delay performance than the static CMOS and BBL-PT 8-bit RCA. The performance of the proposed BBL-PT cell with current sink & current source inverter structures are examined using PSPICE and the model parameters of a 0.13 µm CMOS process

Improvement of a Propagation Delay Model for CMOS Digital Logic Circuits

Propagation delay models, for CMOS Digital Circuits, provide an initial design solution for Integrated Circuits. Resources, both monetary and manpower, constrain the design process, leading to the need for a more accurate entry point further along in the design cycle. By verifying an existing propagation delay method, and its resulting delay model, calibration for any given process technology can be achieved. Literature reviews and detailed analysis of each step in the model development allow for greater understanding of each contributing parameter, and ultimately, adjustments to the model calibration result in a more accurate analytical model. An existing model was verified and improved upon using TSMC 0.18um and IBM 0.13um SPICE decks, and the resulting improvements can be used to further assist individuals needing a method and model for deriving an initial circuit design solution for integrated circuits

End-of-fabrication CMOS process monitor

A set of test 'modules' for verifying the quality of a complementary metal oxide semiconductor (CMOS) process at the end of the wafer fabrication is documented. By electrical testing of specific structures, over thirty parameters are collected characterizing interconnects, dielectrics, contacts, transistors, and inverters. Each test module contains a specification of its purpose, the layout of the test structure, the test procedures, the data reduction algorithms, and exemplary results obtained from 3-, 2-, or 1.6-micrometer CMOS/bulk processes. The document is intended to establish standard process qualification procedures for Application Specific Integrated Circuits (ASIC's)

Analytical Modeling of SON MOSFET and Realization Inverter Circuit for High Speed and Ultra Dense Low Power Circuits

In the recent years, there has been considerable interest in the realization of high speed, small-size and low-power consuming devices and systems. As a consequence, the search for new principle of operation of the small-size, high speed and low-power device is becoming more and more important. In our earlier paper, it has been established that SON technology, not only improve the dc performance with reduce a short-channel effect and threshold voltage, it also improves the frequency response due to improvement in conductance and reduced parasitic effect. Further, it is already in our knowledge that SCEs are suppressed in dual material gate MOSFETs because of the perceivable step in the surface-potential profile, which screens the drain potential. The concept of dual material gate has been applied to SON MOSFETs structure and the features exhibited by resulting new SON structure has been examined for the first time by developing an analytical model and the result agree well with the MEDICI simulation values. In order to substantiate the merits of the proposed SON MOSFETs, a MOS Inverter is realized using the SON MOSFETs and its performance is investigated as an aid to the high-speed, ultra-dense and low-power circuit related work. When you are citing the document, use the following link http://essuir.sumdu.edu.ua/handle/123456789/2779

Product assurance technology for custom LSI/VLSI electronics

The technology for obtaining custom integrated circuits from CMOS-bulk silicon foundries using a universal set of layout rules is presented. The technical efforts were guided by the requirement to develop a 3 micron CMOS test chip for the Combined Release and Radiation Effects Satellite (CRRES). This chip contains both analog and digital circuits. The development employed all the elements required to obtain custom circuits from silicon foundries, including circuit design, foundry interfacing, circuit test, and circuit qualification

Imperfection-Aware Design of CNFET Digital VLSI Circuits

Carbon nanotube field-effect transistor (CNFET) is one of the promising candidates as extensions to silicon CMOS devices. The CNFET, which is a 1-D structure with a near-ballistic transport capability, can potentially offer excellent device characteristics and order-of-magnitude better energy-delay product over standard CMOS devices. Significant challenges in CNT synthesis prevent CNFETs today from achieving such ideal benefits. CNT density variation and metallic CNTs are the dominant type of CNT variations/imperfections that cause performance variation, large static power consumption, and yield degradation. We present an imperfection-aware design technique for CNFET digital VLSI circuits by: 1) Analytical models that are developed to analyze and quantify the effects of CNT density variation on device characteristics, gate and system levels delays. The analytical models, which were validated by comparison to real experimental/simulation data, enables us to examine the space of CNFET combinational, sequential and memory cells circuits to minimize delay variations. Using these model, we drive CNFET processing and circuit design guidelines to manage/overcome CNT density variation. 2) Analytical models that are developed to analyze the effects of metallic CNTs on device characteristics, gate and system levels delay and power consumption. Using our presented analytical models, which are again validated by comparison with simulation data, it is shown that the static power dissipation is a more critical issue than the delay and the dynamic power of CNFET circuits in the presence of m-CNTs. 3) CNT density variation and metallic CNTs can result in functional failure of CNFET circuits. The complete and compact model for CNFET probability of failure that consider CNT density variation and m-CNTs is presented. This analytical model is applied to analyze the logical functional failures. The presented model is extended to predict opportunities and limitations of CNFET technology at todays Gigascale integration and beyond.\u2

Product assurance technology for procuring reliable, radiation-hard, custom LSI/VLSI electronics

Advanced measurement methods using microelectronic test chips are described. These chips are intended to be used in acquiring the data needed to qualify Application Specific Integrated Circuits (ASIC's) for space use. Efforts were focused on developing the technology for obtaining custom IC's from CMOS/bulk silicon foundries. A series of test chips were developed: a parametric test strip, a fault chip, a set of reliability chips, and the CRRES (Combined Release and Radiation Effects Satellite) chip, a test circuit for monitoring space radiation effects. The technical accomplishments of the effort include: (1) development of a fault chip that contains a set of test structures used to evaluate the density of various process-induced defects; (2) development of new test structures and testing techniques for measuring gate-oxide capacitance, gate-overlap capacitance, and propagation delay; (3) development of a set of reliability chips that are used to evaluate failure mechanisms in CMOS/bulk: interconnect and contact electromigration and time-dependent dielectric breakdown; (4) development of MOSFET parameter extraction procedures for evaluating subthreshold characteristics; (5) evaluation of test chips and test strips on the second CRRES wafer run; (6) two dedicated fabrication runs for the CRRES chip flight parts; and (7) publication of two papers: one on the split-cross bridge resistor and another on asymmetrical SRAM (static random access memory) cells for single-event upset analysis