Design and modelling of different SRAM's based on CNTFET 32nm technology

Carbon nanotube field-effect transistor (CNTFET) refers to a field-effect transistor that utilizes a single carbon nanotube or an array of carbon nanotubes as the channel material instead of bulk silicon in the traditional MOSFET structure. Since it was first demonstrated in 1998, there have been tremendous developments in CNTFETs, which promise for an alternative material to replace silicon in future electronics. Carbon nanotubes are promising materials for the nano-scale electron devices such as nanotube FETs for ultra-high density integrated circuits and quantum-effect devices for novel intelligent circuits, which are expected to bring a breakthrough in the present silicon technology. A Static Random Access Memory (SRAM) is designed to plug two needs: i) The SRAM provides as cache memory, communicating between central processing unit and Dynamic Random Access Memory (DRAM). ii) The SRAM technology act as driving force for low power application since SRAM is portable compared to DRAM, and SRAM doesn't require any refresh current. On the basis of acquired knowledge, we present different SRAM's designed for the conventional CNTFET. HSPICE simulations of this circuit using Stanford CNTFET model shows a great improvement in power saving.Comment: 15 Page

A Novel variation-tolerant 9T SRAM design for nanoscale CMOS

As the feature sizes decrease, understanding manufacturing variations becomes essential to effectively design robust circuits. Manufacturing variations occur when process parameters deviate from their ideal or expected values, resulting in variations in device characteristics. Variations in the device characteristics cause the circuit to deviate from its expected behavior resulting in circuit instability, performance degradation, and yield loss. Both from an economic and performance standpoint, the yield and performance of Static Random Access Memories (SRAMs) are of great importance to the modern System-on-Chip designs. SRAM bitcells typically employ well-matched, minimum-sized transistors which make them highly sensitive to process variations. To overcome these challenges, researchers have proposed different topologies for SRAMs with 8T and 10T SRAM designs. These designs improve the cell stability but suffer from bitline-leakage noise, placing constraints on the number of cells shared by each bitline. These designs also have substantial area overhead when compared to the traditional 6T design. In this work, the published SRAM designs are characterized using commercial CMOS 65 nm models and are compared based on critical SRAM parameters like read stability, write stability, bitline leakage and the impact of process variations. Furthermore, a single-ended 9T SRAM design is proposed that enhances data stability and simultaneously addresses the bitline leakage problem. The proposed design also satisfies the yield criterion to achieve 90% yield for a 1Mb SRAM array in the presence of process variations

Low-power and high-performance SRAM design in high variability advanced CMOS technology

As process technologies shrink, the size and number of memories on a chip are exponentially increasing. Embedded SRAMs are a critical component in modern digital systems, and they strongly impact the overall power, performance, and area. To promote memory-related research in academia, this dissertation introduces OpenRAM, a flexible, portable and open-source memory compiler and characterization methodology for generating and verifying memory designs across different technologies.In addition, SRAM designs, focusing on improving power consumption, access time and bitcell stability are explored in high variability advanced CMOS technologies. To have a stable read/write operation for SRAM in high variability process nodes, a differential-ended single-port 8T bitcell is proposed that improves the read noise margin, write noise margin and readout bitcell current by 45%, 48% and 21%, respectively, compared to a conventional 6T bitcell. Also, a differential-ended single-port 12T bitcell for subthreshold operation is proposed that solves the half-select disturbance and allows efficient bit-interleaving. 12T bitcell has a leakage control mechanism which helps to reduce the power consumption and provides operation down to 0.3 V. Both 8T and 12T bitcells are analyzed in a 64 kb SRAM array using 32 nm technology. Besides, to further improve the access time and power consumption, two tracking circuits (multi replica bitline delay and reconfigurable replica bitline delay techniques) are proposed to aid the generation of accurate and optimum sense amplifier set time.An error tolerant SRAM architecture suitable for low voltage video application with dynamic power-quality management is also proposed in this dissertation. This memory uses three power supplies to improve the SRAM stability in low voltages. The proposed triple-supply approach achieves 63% improvement in image quality and 69% reduction in power consumption compared to a single-supply 64 kb SRAM array at 0.70 V

Ultra-low-power SRAM design in high variability advanced CMOS

Thesis (Ph. D.)--Massachusetts Institute of Technology, Dept. of Electrical Engineering and Computer Science, 2009.Cataloged from PDF version of thesis.Includes bibliographical references (p. 163-181).Embedded SRAMs are a critical component in modern digital systems, and their role is preferentially increasing. As a result, SRAMs strongly impact the overall power, performance, and area, and, in order to manage these severely constrained trade-offs, they must be specially designed for target applications. Highly energy-constrained systems (e.g. implantable biomedical devices, multimedia handsets, etc.) are an important class of applications driving ultra-low-power SRAMs. This thesis analyzes the energy of an SRAM sub-array. Since supply- and threshold-voltage have a strong effect, targets for these are established in order to optimize energy. Despite the heavy emphasis on leakage-energy, analysis of a high-density 256x256 sub-array in 45nm LP CMOS points to two necessary optimizations: (1) aggressive supply-voltage reduction (in addition to Vt elevation), and (2) performance enhancement. Important SRAM metrics, including read/write/hold-margin and read-current, are also investigated to identify trade-offs of these optimizations. Based on the need to lower supply-voltage, a 0.35V 256kb SRAM is demonstrated in 65nm LP CMOS. It uses an 8T bit-cell with peripheral circuit-assists to improve write-margin and bit-line leakage. Additionally, redundancy, to manage the increasing impact of variability in the periphery, is proposed to improve the area-offset trade-off of sense-amplifiers, demonstrating promise for highly advanced technology nodes. Based on the need to improve performance, which is limited by density constraints, a 64kb SRAM, using an offset-compensating sense-amplifier, is demonstrated in 45nm LP CMOS with high-density 0.25[mu]m2 bit-cells.(cont.) The sense-amplifier is regenerative, but non -strobed, overcoming timing uncertainties limiting performance, and it is single-ended, for compatibility with 8T cells. Compared to a conventional strobed sense-amplifier, it achieves 34% improvement in worst-case access-time and 4x improvement in the standard deviation of the access-time.by Naveen Verma.Ph.D

Design of High Performance SRAM Based Memory Chip

The semiconductor memory SRAM uses bi-stable latch circuit to store the logic data 1 or 0. It differs from Dynamic RAM (DRAM) which needs periodic refreshment operation for the storage of logic data. Depending upon the frequency of operation SRAM power consumption varies i.e. it consumes very high power at higher frequencies like DRAM. The Cache memory present in the microprocessor needs high speed memory hence SRAM can be used for that purpose in microprocessors. The DRAM is normally used in the Main memory of processors, where importance is given to the density than its speed. The SRAM is also used in industrial subsystems, scientific and automotive electronics. In this thesis 16-Kb Memory is designed by using memory banking method in UMC 90nm technology ,which operates at a frequency of 1GHz.The post layout simulation for the complete design is performed and also obtained power analysis for the overall design. All peripherals like pre-charge, Row Decoder, Word line driver, Sense amplifier, Column Decoder/Mux and write driver are designed and layouts of all the above peripherals also drawn in an optimised manner such that their layout occupies minimum area. The 6T SRAM cell is designed with operating frequency of 8 GHz and stability analysis are also performed for single SRAM cell. The layout of Single SRAM cell is drawn in a symmetric manner, such that two adjacent cells can share same contact, which results reduction in the area of cell layout. The Static Noise Margin, Read noise margin and Write Noise Margin of single cell are found to be 240mV, 115mV and 425mV respectively for a supply voltage of 1V.The effect of pull-up ratio and cell ratio on the stability of SRAM cell is observed

6T-SRAM 1Mb Design with Test Structures and Post Silicon Validation

abstract: Static random-access memories (SRAM) are integral part of design systems as caches and data memories that and occupy one-third of design space. The work presents an embedded low power SRAM on a triple well process that allows body-biasing control. In addition to the normal mode operation, the design is embedded with Physical Unclonable Function (PUF) [Suh07] and Sense Amplifier Test (SA Test) mode. With PUF mode structures, the fabrication and environmental mismatches in bit cells are used to generate unique identification bits. These bits are fixed and known as preferred state of an SRAM bit cell. The direct access test structure is a measurement unit for offset voltage analysis of sense amplifiers. These designs are manufactured using a foundry bulk CMOS 55 nm low-power (LP) process. The details about SRAM bit-cell and peripheral circuit design is discussed in detail, for certain cases the circuit simulation analysis is performed with random variations embedded in SPICE models. Further, post-silicon testing results are discussed for normal operation of SRAMs and the special test modes. The silicon and circuit simulation results for various tests are presented.Dissertation/ThesisMasters Thesis Electrical Engineering 201

Robust low-power digital circuit design in nano-CMOS technologies

Device scaling has resulted in large scale integrated, high performance, low-power, and low cost systems. However the move towards sub-100 nm technology nodes has increased variability in device characteristics due to large process variations. Variability has severe implications on digital circuit design by causing timing uncertainties in combinational circuits, degrading yield and reliability of memory elements, and increasing power density due to slow scaling of supply voltage. Conventional design methods add large pessimistic safety margins to mitigate increased variability, however, they incur large power and performance loss as the combination of worst cases occurs very rarely. In-situ monitoring of timing failures provides an opportunity to dynamically tune safety margins in proportion to on-chip variability that can significantly minimize power and performance losses. We demonstrated by simulations two delay sensor designs to detect timing failures in advance that can be coupled with different compensation techniques such as voltage scaling, body biasing, or frequency scaling to avoid actual timing failures. Our simulation results using 45 nm and 32 nm technology BSIM4 models indicate significant reduction in total power consumption under temperature and statistical variations. Future work involves using dual sensing to avoid useless voltage scaling that incurs a speed loss. SRAM cache is the first victim of increased process variations that requires handcrafted design to meet area, power, and performance requirements. We have proposed novel 6 transistors (6T), 7 transistors (7T), and 8 transistors (8T)-SRAM cells that enable variability tolerant and low-power SRAM cache designs. Increased sense-amplifier offset voltage due to device mismatch arising from high variability increases delay and power consumption of SRAM design. We have proposed two novel design techniques to reduce offset voltage dependent delays providing a high speed low-power SRAM design. Increasing leakage currents in nano-CMOS technologies pose a major challenge to a low-power reliable design. We have investigated novel segmented supply voltage architecture to reduce leakage power of the SRAM caches since they occupy bulk of the total chip area and power. Future work involves developing leakage reduction methods for the combination logic designs including SRAM peripherals

Power Efficient Data-Aware SRAM Cell for SRAM-Based FPGA Architecture

The design of low-power SRAM cell becomes a necessity in today\u27s FPGAs, because SRAM is a critical component in FPGA design and consumes a large fraction of the total power. The present chapter provides an overview of various factors responsible for power consumption in FPGA and discusses the design techniques of low-power SRAM-based FPGA at system level, device level, and architecture levels. Finally, the chapter proposes a data-aware dynamic SRAM cell to control the power consumption in the cell. Stack effect has been adopted in the design to reduce the leakage current. The various peripheral circuits like address decoder circuit, write/read enable circuits, and sense amplifier have been modified to implement a power-efficient SRAM-based FPGA

Ultra-Low Power Circuit Design for Cubic-Millimeter Wireless Sensor Platform.

Modern daily life is surrounded by smaller and smaller computing devices. As Bell’s Law predicts, the research community is now looking at tiny computing platforms and mm3-scale sensor systems are drawing an increasing amount of attention since they can create a whole new computing environment. Designing mm3-scale sensor nodes raises various circuit and system level challenges and we have addressed and proposed novel solutions for many of these challenges to create the first complete 1.0mm3 sensor system including a commercial microprocessor. We demonstrate a 1.0mm3 form factor sensor whose modular die-stacked structure allows maximum volume utilization. Low power I2C communication enables inter-layer serial communication without losing compatibility to standard I2C communication protocol. A dual microprocessor enables concurrent computation for the sensor node control and measurement data processing. A multi-modal power management unit allowed energy harvesting from various harvesting sources. An optical communication scheme is provided for initial programming, synchronization and re-programming after recovery from battery discharge. Standby power reduction techniques are investigated and a super cut-off power gating scheme with an ultra-low power charge pump reduces the standby power of logic circuits by 2-19× and memory by 30%. Different approaches for designing low-power memory for mm3-scale sensor nodes are also presented in this work. A dual threshold voltage gain cell eDRAM design achieves the lowest eDRAM retention power and a 7T SRAM design based on hetero-junction tunneling transistors reduces the standby power of SRAM by 9-19× with only 15% area overhead. We have paid special attention to the timer for the mm3-scale sensor systems and propose a multi-stage gate-leakage-based timer to limit the standard deviation of the error in hourly measurement to 196ms and a temperature compensation scheme reduces temperature dependency to 31ppm/°C. These techniques for designing ultra-low power circuits for a mm3-scale sensor enable implementation of a 1.0mm3 sensor node, which can be used as a skeleton for future micro-sensor systems in variety of applications. These microsystems imply the continuation of the Bell’s Law, which also predicts the massive deployment of mm3-scale computing systems and emergence of even smaller and more powerful computing systems in the near future.Ph.D.Electrical EngineeringUniversity of Michigan, Horace H. Rackham School of Graduate Studieshttp://deepblue.lib.umich.edu/bitstream/2027.42/91438/1/sori_1.pd

Low-Power, Low-Voltage SRAM Circuits Design For Nanometric CMOS Technologies

Embedded SRAM memory is a vital component in modern SoCs. More than 80% of the System-on-Chip (SoC) die area is often occupied by SRAM arrays. As such, system reliability and yield is largely governed by the SRAM's performance and robustness. The aggressive scaling trend in CMOS device minimum feature size, coupled with the growing demand in high-capacity memory integration, has imposed the use of minimal size devices to realize a memory bitcell. The smallest 6T SRAM bitcell to date occupies a 0.1um2 in silicon area. SRAM bitcells continue to benefit from an aggressive scaling trend in CMOS technologies. Unfortunately, other system components, such as interconnects, experience a slower scaling trend. This has resulted in dramatic deterioration in a cell's ability to drive a heavily-loaded interconnects. Moreover, the growing fluctuation in device properties due to Process, Voltage, and Temperature (PVT) variations has added more uncertainty to SRAM operation. Thus ensuring the ability of a miniaturized cell to drive heavily-loaded bitlines and to generate adequate voltage swing is becoming challenging. A large percentage of state-of-the-art SoC system failures are attributed to the inability of SRAM cells to generate the targeted bitline voltage swing within a given access time. The use of read-assist mechanisms and current mode sense amplifiers are the two key strategies used to surmount bitline loading effects. On the other hand, new bitcell topologies and cell supply voltage management are used to overcome fluctuations in device properties. In this research we tackled conventional 6T SRAM bitcell limited drivability by introducing new integrated voltage sensing schemes and current-mode sense amplifiers. The proposed schemes feature a read-assist mechanism. The proposed schemes' functionality and superiority over existing schemes are verified using transient and statistical SPICE simulations. Post-layout extracted views of the devices are used for realistic simulation results. Low-voltage operated SRAM reliability and yield enhancement is investigated and a wordline boost technique is proposed as a means to manage the cell's WL operating voltage. The proposed wordline driver design shows a significant improvement in reliability and yield in a 400-mV 6T SRAM cell. The proposed wordline driver design exploit the cell's Dynamic Noise Margin (DNM), therefore boost peak level and boost decay rate programmability features are added. SPICE transient and statistical simulations are used to verify the proposed design's functionality. Finally, at a bitcell-level, we proposed a new five-transistor (5T) SRAM bitcell which shows competitive performance and reliability figures of merit compared to the conventional 6T bitcell. The functionality of the proposed cell is verified by post-layout SPICE simulations. The proposed bitcell topology is designed, implemented and fabricated in a standard ST CMOS 65nm technology process. A 1.2_ 1.2 mm2 multi-design project test chip consisting of four 32-Kbit (256-row x 128-column) SRAM macros with the required peripheral and timing control units is fabricated. Two of the designed SRAM macros are dedicated for this work, namely, a 32-Kbit 5T macro and a 32-Kbit 6T macro which is used as a comparison reference. Other macros belong to other projects and are not discussed in this document