Triaxial digital fluxgate magnetometer for NASA applications explorer mission: Results of tests of critical elements

Tests performed to prove the critical elements of the triaxial digital fluxgate magnetometer design were described. A method for improving the linearity of the analog to digital converter portion of the instrument was studied in detail. A sawtooth waveform was added to the signal being measured before the A/D conversion, and averaging the digital readings over one cycle of the sawtooth. It was intended to reduce bit error nonlinearities present in the A/D converter which could be expected to be as much as 16 gamma if not reduced. No such nonlinearities were detected in the output of the instrument which included the feature designed to reduce these nonlinearities. However, a small scale nonlinearity of plus or minus 2 gamma with a 64 gamma repetition rate was observed in the unit tested. A design improvement intended to eliminate this small scale nonlinearity was examined

Development of an Oxygen Saturation Monitoring System by Embedded Electronics

Measuring Oxygenation of blood (SaO2) plays a vital role in patient’s health monitoring. This is often measured by pulse oximeter, which is standard measure during anesthesia, asthma, operative and post-operative recoveries. Despite all, monitoring Oxygen level is necessary for infants with respiratory problems, old people, and pregnant women and in other critical situations. This paper discusses the process of calculating the level of oxygen in blood and heart-rate detection using a non-invasive photo plethysmography also called as pulsoximeter using the MSP430FG437 microcontroller (MCU). The probe uses infrared lights to measure and should be in physical contact with any peripheral points in our body. The percentage of oxygen in the body is worked by measuring the intensity from each frequency of light after it transmits through the body and then calculating the ratio between these two intensities

Analysis, Design and Control of a Modular Full-Si Converter Concept for Electric Vehicle Ultra-Fast Charging

L'abstract è presente nell'allegato / the abstract is in the attachmen

Low energy digital circuits in advanced nanometer technologies

The demand for portable devices and the continuing trend towards the Internet ofThings (IoT) have made of energy consumption one of the main concerns in the industry and researchers. The most efficient way of reducing the energy consump-tion of digital circuits is decreasing the supply voltage (Vdd) since the dynamicenergy quadratically depends onVdd. Several works have shown that an optimumsupply voltage exists that minimizes the energy consumption of digital circuits. This optimum supply voltage is usually around 200 mV and 400 mV dependingon the circuit and technology used. To obtain these low supply voltages, on-chipdc-dc converters with high efficiency are needed.This thesis focuses on the study of subthreshold digital systems in advancednanometer technologies. These systems usually can be divided into a Power Man-agement Unit (PMU) and a digital circuit operating at the subthreshold regime.In particular, while considering the PMU, one of the key circuits is the dc-dcconverter. This block converts the voltage from the power source (battery, supercapacitor or wireless power transfer link) to a voltage between 200 mV and 400mV in order to power the digital circuit. In this thesis, we developed two chargerecycling techniques in order to improve the efficiency of switched capacitors dc-dcconverters. The first one is based on a technique used in adiabatic circuits calledstepwise charging. This technique was used in circuits and applications wherethe switching consumption of a big capacitance is very important. We analyzedthe possibility of using this technique in switched capacitor dc-dc converters withintegrated capacitors. We showed through measurements that a 29% reductionin the gate drive losses can be obtained with this technique. The second one isa simplification of stepwise charging which can be applied in some architecturesof switched capacitors dc-dc converters. We also fabricated and tested a dc-dcconverter with this technique and obtained a 25% energy reduction in the drivingof the switches that implement the converter.Furthermore, we studied the digital circuit working in the subthreshold regime,in particular, operating at the minimum energy point. We studied different modelsfor circuits working in these conditions and improved them by considering thedifferences between the NMOS and PMOS transistors. We obtained an optimumNMOS/PMOS leakage current imbalance that minimizes the total leakage energy per operation. This optimum depends on the architecture of the digital circuitand the input data. However, we also showed that important energy reductionscan be obtained by operating at a mean optimum imbalance. We proposed two techniques to achieve the optimum imbalance. We used aFully Depleted Silicon on Insulator (FD-SOI) 28 nm technology for most of the simulations, but we also show that these techniques can be applied in traditionalbulk CMOS technologies. The first one consists in using the back plane voltage of the transistors (or bulk voltage in traditional CMOS) to adjust independently theleakage current of the NMOS and PMOS transistor to work under the optimum NMOS/PMOS leakage current imbalance. We called this approach the OptimumBack Plane Biasing (OBB). A second technique consists of using the length of the transistors to adjust this leakage current imbalance. In the subthreshold regimeand in advanced nanometer technologies a moderate increase in the length has little impact in the output capacitance of the gates and thus in the dynamic energy.We called this approach an Asymmetric Length Biasing (ALB). Finally, we use these techniques in some basic circuits such as adders. We show that around 50% energy reduction can be obtained, in a wide range of frequency while working near the minimum energy point and using these techniques. The main contributions of this thesis are: • Analysis of the stepwise charging technique in small capacitances. •Implementation of stepwise charging technique as a charge recycling tech-nique for efficiency improvement in switched capacitor dc-dc converters. • Development of a charge sharing technique for efficiency improvement inswitched capacitor dc-dc converters. • Analysis of minimum operating voltage of digital circuits due to intrinsicnoise and the impact of technology scaling in this minimum. • Improvement in the modeling of the minimum energy point while considering NMOS and PMOS transistors difference. • Demonstration of the existence of an optimum leakage current imbalance be-tween the NMOS and PMOS transistors that minimizes energy consumptionin the subthreshold regiion. • Development of a back plane (bulk) voltage strategy for working in this optimum.• Development of a sizing strategy for working in the aforementioned optimum. • Analysis of the impact of architecture and input data on the optimum im-balance. The thesis is based on the publications [1–8]. During the Ph.D. program, other publications were generated [9–16] that are partially related with the thesis butwere not included in it.La constante demanda de dispositivos portables y los avances hacia la Internet de las Cosas han hecho del consumo de energía uno de los mayores desafíos y preocupación en la industria y la academia. La forma más eficiente de reducir el consumo de energía de los circuitos digitales es reduciendo su voltaje de alimentación ya que la energía dinámica depende de manera cuadrática con dicho voltaje. Varios trabajos demostraron que existe un voltaje de alimentación óptimo, que minimiza la energía consumida para realizar cierta operación en un circuito digital, llamado punto de mínima energía. Este óptimo voltaje se encuentra usualmente entre 200 mV y 400 mV dependiendo del circuito y de la tecnología utilizada. Para obtener estos voltajes de alimentación de la fuente de energía, se necesitan conversores dc-dc integrados con alta eficiencia. Esta tesis se concentra en el estudio de sistemas digitales trabajando en la región sub umbral diseñados en tecnologías nanométricas avanzadas (28 nm). Estos sistemas se pueden dividir usualmente en dos bloques, uno llamado bloque de manejo de potencia, y el segundo, el circuito digital operando en la region sub umbral. En particular, en lo que corresponde al bloque de manejo de potencia, el circuito más crítico es en general el conversor dc-dc. Este circuito convierte el voltaje de una batería (o super capacitor o enlace de transferencia inalámbrica de energía o unidad de cosechado de energía) en un voltaje entre 200 mV y 400 mV para alimentar el circuito digital en su voltaje óptimo. En esta tesis desarrollamos dos técnicas que, mediante el reciclado de carga, mejoran la eficiencia de los conversores dc-dc a capacitores conmutados. La primera es basada en una técnica utilizada en circuitos adiabáticos que se llama carga gradual o a pasos. Esta técnica se ha utilizado en circuitos y aplicaciones en donde el consumo por la carga y descarga de una capacidad grande es dominante. Nosotros analizamos la posibilidad de utilizar esta técnica en conversores dc-dc a capacitores conmutados con capacitores integrados. Se demostró a través de medidas que se puede reducir en un 29% el consumo debido al encendido y apagado de las llaves que implementan el conversor dc-dc. La segunda técnica, es una simplificación de la primera, la cual puede ser aplicada en ciertas arquitecturas de conversores dc-dc a capacitores conmutados. También se fabricó y midió un conversor con esta técnica y se obtuvo una reducción del 25% en la energía consumida por el manejo de las llaves del conversor. Por otro lado, estudiamos los circuitos digitales operando en la región sub umbral y en particular cerca del punto de mínima energía. Estudiamos diferentes modelos para circuitos operando en estas condiciones y los mejoramos considerando las diferencias entre los transistores NMOS y PMOS. Mediante este modelo demostramos que existe un óptimo en la relación entre las corrientes de fuga de ambos transistores que minimiza la energía de fuga consumida por operación. Este óptimo depende de la arquitectura del circuito digital y ademas de los datos de entrada del circuito. Sin embargo, demostramos que se puede reducir el consumo de manera considerable al operar en un óptimo promedio. Propusimos dos técnicas para alcanzar la relación óptima. Utilizamos una tecnología FD-SOI de 28nm para la mayoría de las simulaciones, pero también mostramos que estas técnicas pueden ser utilizadas en tecnologías bulk convencionales. La primer técnica, consiste en utilizar el voltaje de la puerta trasera (o sustrato en CMOS convencional) para ajustar de manera independiente las corrientes del NMOS y PMOS para que el circuito trabaje en el óptimo de la relación de corrientes. Esta técnica la llamamos polarización de voltaje de puerta trasera óptimo. La segunda técnica, consiste en utilizar los largos de los transistores para ajustar las corrientes de fugas de cada transistor y obtener la relación óptima. Trabajando en la región sub umbral y en tecnologías avanzadas, incrementar moderadamente el largo del transistor tiene poco impacto en la energía dinámica y es por eso que se puede utilizar. Finalmente, utilizamos estas técnicas en circuitos básicos como sumadores y mostramos que se puede obtener una reducción de la energía consumida de aproximadamente 50%, en un amplio rango de frecuencias, mientras estos circuitos trabajan cerca del punto de energía mínima. Las principales contribuciones de la tesis son: • Análisis de la técnica de carga gradual o a pasos en capacidades pequeñas. • Implementación de la técnica de carga gradual para la mejora de eficiencia de conversores dc-dc a capacitores conmutados. • Simplificación de la técnica de carga gradual para mejora de la eficiencia en algunas arquitecturas de conversores dc-dc de capacitores conmutados. • Análisis del mínimo voltaje de operación en circuitos digitales debido al ruido intrínseco del dispositivo y el impacto del escalado de las tecnologías en el mismo. • Mejoras en el modelado del punto de energía mínima de operación de un circuito digital en el cual se consideran las diferencias entre el transistor PMOS y NMOS. • Demostración de la existencia de un óptimo en la relación entre las corrientes de fuga entre el NMOS y PMOS que minimiza la energía de fugas consumida en la región sub umbral. • Desarrollo de una estrategia de polarización del voltaje de puerta trasera para que el circuito digital trabaje en el óptimo antes mencionado. • Desarrollo de una estrategia para el dimensionado de los transistores que componen las compuertas digitales que permite al circuito digital operar en el óptimo antes mencionado. • Análisis del impacto de la arquitectura del circuito y de los datos de entrada del mismo en el óptimo antes mencionado

Reflectance measurements

The productivity of spectroreflectometer equipment and operating personnel and the accuracy and sensitivity of the measurements were investigated. Increased optical sensitivity and better design of the data collection and processing scheme to eliminate some of the unnecessary present operations were conducted. Two promising approaches to increased sensitivity were identified, conventional processing with error compensation and detection of random noise modulation

Capacitance-to-Digital Converter for Harvested Systems Down to 0.3 V With No Trimming, Reference, and Voltage Regulation

In this work, a capacitance-to-digital converter (CDC) suitable for direct energy harvesting is introduced. The nW peak power and the ability to operate at any supply voltage in the 0.3-1.8 V range allow complete suppression of any intermediate DC-DC conversion, and hence direct supply provision from the harvester, as demonstrated with a mm-scale solar cell. The proposed CDC architecture eliminates the need for any additional support circuitry, preserving true nW-power operation, and reducing design and integration effort. In detail, the architecture is based on a pair of double-swappable oscillators, and avoids the need for any voltage/current/frequency reference circuit in the oscillator mismatch compensation. The digital and differential nature of the architecture counteracts the effect of process/voltage/temperature variations. A load-agnostic one-time self-calibration scheme compensates mismatch, and can be run from boot to run stage of the chip lifecycle. The proposed self-calibration scheme suppresses any trimming or testing time for low-cost systems, and avoids any input capacitance disconnection requirement. A 180-nm testchip shows 7-bit ENOB down to 0.3 V and 1.37-nW total power, when powered by a 1-mm2 indoor solar cell down to 10 lux (i.e., late twilight

Ultra-low noise, high-frame rate readout design for a 3D-stacked CMOS image sensor

Due to the switch from CCD to CMOS technology, CMOS based image sensors have become smaller, cheaper, faster, and have recently outclassed CCDs in terms of image quality. Apart from the extensive set of applications requiring image sensors, the next technological breakthrough in imaging would be to consolidate and completely shift the conventional CMOS image sensor technology to the 3D-stacked technology. Stacking is recent and an innovative technology in the imaging field, allowing multiple silicon tiers with different functions to be stacked on top of each other. The technology allows for an extreme parallelism of the pixel readout circuitry. Furthermore, the readout is placed underneath the pixel array on a 3D-stacked image sensor, and the parallelism of the readout can remain constant at any spatial resolution of the sensors, allowing extreme low noise and a high-frame rate (design) at virtually any sensor array resolution. The objective of this work is the design of ultra-low noise readout circuits meant for 3D-stacked image sensors, structured with parallel readout circuitries. The readout circuit’s key requirements are low noise, speed, low-area (for higher parallelism), and low power. A CMOS imaging review is presented through a short historical background, followed by the description of the motivation, the research goals, and the work contributions. The fundamentals of CMOS image sensors are addressed, as a part of highlighting the typical image sensor features, the essential building blocks, types of operation, as well as their physical characteristics and their evaluation metrics. Following up on this, the document pays attention to the readout circuit’s noise theory and the column converters theory, to identify possible pitfalls to obtain sub-electron noise imagers. Lastly, the fabricated test CIS device performances are reported along with conjectures and conclusions, ending this thesis with the 3D-stacked subject issues and the future work. A part of the developed research work is located in the Appendices.Devido à mudança da tecnologia CCD para CMOS, os sensores de imagem em CMOS tornam se mais pequenos, mais baratos, mais rápidos, e mais recentemente, ultrapassaram os sensores CCD no que respeita à qualidade de imagem. Para além do vasto conjunto de aplicações que requerem sensores de imagem, o próximo salto tecnológico no ramo dos sensores de imagem é o de mudar completamente da tecnologia de sensores de imagem CMOS convencional para a tecnologia “3D-stacked”. O empilhamento de chips é relativamente recente e é uma tecnologia inovadora no campo dos sensores de imagem, permitindo vários planos de silício com diferentes funções poderem ser empilhados uns sobre os outros. Esta tecnologia permite portanto, um paralelismo extremo na leitura dos sinais vindos da matriz de píxeis. Além disso, num sensor de imagem de planos de silício empilhados, os circuitos de leitura estão posicionados debaixo da matriz de píxeis, sendo que dessa forma, o paralelismo pode manter-se constante para qualquer resolução espacial, permitindo assim atingir um extremo baixo ruído e um alto debito de imagens, virtualmente para qualquer resolução desejada. O objetivo deste trabalho é o de desenhar circuitos de leitura de coluna de muito baixo ruído, planeados para serem empregues em sensores de imagem “3D-stacked” com estruturas altamente paralelizadas. Os requisitos chave para os circuitos de leitura são de baixo ruído, rapidez e pouca área utilizada, de forma a obter-se o melhor rácio. Uma breve revisão histórica dos sensores de imagem CMOS é apresentada, seguida da motivação, dos objetivos e das contribuições feitas. Os fundamentos dos sensores de imagem CMOS são também abordados para expor as suas características, os blocos essenciais, os tipos de operação, assim como as suas características físicas e suas métricas de avaliação. No seguimento disto, especial atenção é dada à teoria subjacente ao ruído inerente dos circuitos de leitura e dos conversores de coluna, servindo para identificar os possíveis aspetos que dificultem atingir a tão desejada performance de muito baixo ruído. Por fim, os resultados experimentais do sensor desenvolvido são apresentados junto com possíveis conjeturas e respetivas conclusões, terminando o documento com o assunto de empilhamento vertical de camadas de silício, junto com o possível trabalho futuro

The measurement of very low conductivity and dielectric loss in XLPE cables: A possible method to detect degradation due to thermal aging

The dielectric response of crosslinked polyethylene (XLPE) insulated, miniature power cables, extruded with inner and outer semicons, was measured over the frequency range 10-4 to 104 Hz at temperatures from 20 to 100 °C. A dielectric spectrometer was used for the frequency range 10-4 to 10-2 Hz. A bespoke noise-free power supply was constructed and used to measure the dc conductivity and, using a Fourier transform technique, it was also used to measure the very low dielectric tanδ losses encountered at frequencies of 1 to 100 Hz. Tanδ measurements of <;10-5 were found in this frequency range and attributed to a β-mode dielectric relaxation lying above 100 Hz due to motion of chain segments in the amorphous region and an β-mode relaxation lying below 1 Hz window due to twists of chains in the crystal lamellae. The dc conductivity measurements were consistent with those of the dielectric spectrometer and indicate lower dc conductivities in vacuum degassed cables than have been previously reported for XLPE (less than 10-17 S.m-1). The conduction process is thermally activated with an activation energy of approximately 1.1 eV. Higher conductivities were found for non-degassed cables. A transformer ratio bridge was used for measurements in the range 1 to 10 kHz; loss in this region was shown to be due to the series resistance of the semicon layers. Thermal ageing of the cables at 135 °C for 60 days caused significant increases in the conductivity and tanδ and it is considered that such measurements may be a sensitive way of measuring electrical degradation due to thermal aging

Very Low Power Cockcroft-Walton Voltage Multiplier for RF Energy Harvesting Applications

A device was required that could harvest the electromagnetic energy present in ambient radio frequency (RF) signals. A part of this device must convert the AC RF signal received by the antenna into a DC signal that can be used in an embedded application. Since the RF signal amplitude is small, it must first be amplified and rectified to become a usable signal. The Cockcroft-Walton voltage multiplier is a subsystem of the design which ideally converts a 100 mV AC signal coming from the antenna to a 350 mV DC signal. The output of the voltage multiplier is used to power another subsystem. At 10 MHz, the Cockcroft-Walton multiplier was able to output a DC voltage of 350 mV given an AC input signal of 140 mV. The results of the testing show verifiable proof-of-concept that the Cockcroft-Walton voltage multiplier has the potential to be used for low power RF energy harvesting applications

Ultra-Efficient Cascaded Buck-Boost Converter

This thesis presents various techniques to achieve ultra-high-efficiency for Cascaded-Buck-Boost converter. A rigorous loss model with component non linearity is developed and validated experimentally. An adaptive-switching-frequency control is discussed to optimize weighted efficiency. Some soft-switching techniques are discussed. A low-profile planar-nanocrystalline inductor is developed and various design aspects of core and copper design are discussed. Finite-element-method is used to examine and visualize the inductor design. By implementing the above, a peak efficiency of over 99.2 % is achieved with a power density of 6 kW/L and a maximum profile height of 7 mm is reported. This converter finds many applications because of its versatility: allowing bidirectional power flow and the ability to step-up or step-down voltages in either direction