Using temperature as observable of the frequency response of RF CMOS amplifiers

The power dissipated by the devices of an integrated circuit can be considered a signature of the circuit's performance. Without disturbing the circuit operation, this power consumption can be monitored by temperature measurements on the silicon surface. In this paper, the frequency response of a RF LNA is observed by measuring spectral components of the sensed temperature. Results prove that temperature can be used to debug and observe figures of merit of analog blocks in a RFIC. Experimental measurements have been done in a 0.25 mum CMOS process. Laser probing techniques have been used as temperature sensors; specifically, a thermoreflectometer and a Michaelson interferometer.Peer ReviewedPostprint (author's final draft

Concepts for Short Range Millimeter-wave Miniaturized Radar Systems with Built-in Self-Test

This work explores short-range millimeter wave radar systems, with emphasis on miniaturization and overall system cost reduction. The designing and implementation processes, starting from the system level design considerations and characterization of the individual components to final implementation of the proposed architecture are described briefly. Several D-band radar systems are developed and their functionality and performances are demonstrated

Built-in self test of RF subsystems

textWith the rapid development of wireless and wireline communications, a variety of new standards and applications are emerging in the marketplace. In order to achieve higher levels of integration, RF circuits are frequently embedded into System on Chip (SoC) or System in Package (SiP) products. These developments, however, lead to new challenges in manufacturing test time and cost. Use of traditional RF test techniques requires expensive high frequency test instruments and long test time, which makes test one of the bottlenecks for reducing IC costs. This research is in the area of built-in self test technique for RF subsystems. In the test approach followed in this research, on-chip detectors are used to calculate circuits specifications, and data converters are used to collect the data for analysis by an on-chip processor. A novel on-chip amplitude detector has been designed and optimized for RF circuit specification test. By using on-chip detectors, both the system performance and specifications of the individual components can be accurately measured. On-chip measurement results need to be collected by Analog to Digital Converters (ADCs). A novel time domain, low power ADC has been designed for this purpose. The ADC architecture is based on a linear voltage controlled delay line. Using this structure results in a linear transfer function for the input dependent delay. The time delay difference is then compared to a reference to generate a digital code. Two prototype test chips were fabricated in commercial CMOS processes. One is for the RF transceiver front end with on-chip detectors; the other is for the test ADC. The 940MHz RF transceiver front-end was implemented with on-chip detectors in a 0.18 [micrometer] CMOS technology. The chips were mounted onto RF Printed Circuit Boards (PCBs), with tunable power supply and biasing knobs. The detector was characterized with measurements which show that the detector keeps linear performance over a wide input amplitude range of 500mV. Preliminary simulation and measurements show accurate transceiver performance prediction under process variations. A 300MS/s 6 bit ADC was designed using the novel time domain architecture in a 0.13 [micrometer] standard digital CMOS process. The simulation results show 36.6dB Signal to Noise Ratio (SNR), 34.1dB Signal to Noise and Distortion Ratio (SNDR) for 99MHz input, Differential Non-Linearity (DNL)<0.2 Least Significant Bit (LSB), and Integral Non-Linearity (INL)<0.5LSB. Overall chip power is 2.7mW with a 1.2V power supply. The built-in detector RF test was extended to a full transceiver RF front end test with a loop-back setup, so that measurements can be made to verify the benefits of the technique. The application of the approach to testing gain, linearity and noise figure was investigated. New detector types are also evaluated. In addition, the low-power delay-line based ADC was characterized and improved to facilitate gathering of data from the detector. Several improved ADC structures at the system level are also analyzed. The built-in detector based RF test technique enables the cost-efficient test for SoCs.Electrical and Computer Engineerin

Built-in-self-test of RF front-end circuitry

Fuelled by the ever increasing demand for wireless products and the advent of deep submicron CMOS, RF ICs have become fairly commonplace in the semiconductor market. This has given rise to a new breed of Systems-On-Chip (SOCs) with RF front-ends tightly integrated along with digital, analog and mixed signal circuitry. However, the reliability of the integrated RF front-end continues to be a matter of significant concern and considerable research. A major challenge to the reliability of RF ICs is the fact that their performance is also severely degraded by wide tolerances in on-chip passives and package parasitics, in addition to process related faults. Due to the absence of contact based testing solutions in embedded RF SOCs (because the very act of probing may affect the performance of the RF circuit), coupled with the presence of very few test access nodes, a Built In Self Test approach (BiST) may prove to be the most efficient test scheme. However due to the associated challenges, a comprehensive and low-overhead BiST methodology for on-chip testing of RF ICs has not yet been reported in literature. In the current work, an approach to RF self-test that has hitherto been unexplored both in literature and in the commercial arena is proposed. A sensitive current monitor has been used to extract variations in the supply current drawn by the circuit-under-test (CUT). These variations are then processed in time and frequency domain to develop signatures. The acquired signatures can then be mapped to specific behavioral anomalies and the locations of these anomalies. The CUT is first excited by simple test inputs that can be generated on-chip. The current monitor extracts the corresponding variations in the supply current of the CUT, thereby creating signatures that map to various performance metrics of the circuit. These signatures can then be post-processed by low overhead on-chip circuitry and converted into an accessible form. To be successful in the RF domain any BIST architecture must be minimally invasive, reliable, offer good fault coverage and present low real estate and power overheads. The current-based self-test approach successfully addresses all these concerns. The technique has been applied to RF Low Noise Amplifiers, Mixers and Voltage Controlled Oscillators. The circuitry and post-processing techniques have also been demonstrated in silicon (using the IBM 0.25 micron RF CMOS process). The entire self-test of the RF front-end can be accomplished with a total test time of approximately 30µs, which is several orders of magnitude better than existing commercial test schemes

Fault-tolerant design of RF front-end circuits

The continuing trends of scaling in the CMOS industry have, inevitably, been accompanied by an ever-increasing array of process faults and fabrication complexities. The relentless march towards miniaturization and massive integration, in addition to increasing operating frequencies has resulted in increasing concerns about the reliability of integrated RF front-ends. Coupled with rising cost per chip, the fault-tolerant paradigm has become pertinent in the RFIC domain. Two main reasons have contributed to the fact that fault-tolerant solutions for circuits that operate in the GHz domain have not been realized so far. First, GHz signals are extremely sensitive to higher-order effects such as stray pick-ups, interference, package & on-chip parasitics, etc. Secondly, the use of passives, especially inductors, in the feedback path poses huge area overheads, in addition to a slew of instability problems due to wide variations and soft faults. Hence traditional fault-tolerance methods used in digital and low frequency analog circuits cannot be applied in the RF domain. This work presents a unique methodology to achieve fault-tolerance in RF circuits through dynamic sensing and on-chip self-correction, along with the development of robust algorithms. This technique is minimally intrusive and is transparent during \u27normal\u27 use of the circuit. It is characterized by low area and power overheads, does not need any off-chip computing or DSP cores, and is characterized by self-correction times in the range of a few hundreds of microseconds. It compares very well with existing commercial RF test solutions that use DSP cores and require hundreds of milliseconds. The methodology is demonstrated on a LNA, since it is critical for the performance of the entire front-end. It is validated with simulation and fabrication results of the system designed in IBM 0.25 µm CMOS 6RF process

System-level design and RF front-end implementation for a 3-10ghz multiband-ofdm ultrawideband receiver and built-in testing techniques for analog and rf integrated circuits

This work consists of two main parts: a) Design of a 3-10GHz UltraWideBand (UWB) Receiver and b) Built-In Testing Techniques (BIT) for Analog and RF circuits. The MultiBand OFDM (MB-OFDM) proposal for UWB communications has received significant attention for the implementation of very high data rate (up to 480Mb/s) wireless devices. A wideband LNA with a tunable notch filter, a downconversion quadrature mixer, and the overall radio system-level design are proposed for an 11-band 3.4-10.3GHz direct conversion receiver for MB-OFDM UWB implemented in a 0.25mm BiCMOS process. The packaged IC includes an RF front-end with interference rejection at 5.25GHz, a frequency synthesizer generating 11 carrier tones in quadrature with fast hopping, and a linear phase baseband section with 42dB of gain programmability. The receiver IC mounted on a FR-4 substrate provides a maximum gain of 67-78dB and NF of 5-10dB across all bands while consuming 114mA from a 2.5V supply. Two BIT techniques for analog and RF circuits are developed. The goal is to reduce the test cost by reducing the use of analog instrumentation. An integrated frequency response characterization system with a digital interface is proposed to test the magnitude and phase responses at different nodes of an analog circuit. A complete prototype in CMOS 0.35mm technology employs only 0.3mm2 of area. Its operation is demonstrated by performing frequency response measurements in a range of 1 to 130MHz on 2 analog filters integrated on the same chip. A very compact CMOS RF RMS Detector and a methodology for its use in the built-in measurement of the gain and 1dB compression point of RF circuits are proposed to address the problem of on-chip testing at RF frequencies. The proposed device generates a DC voltage proportional to the RMS voltage amplitude of an RF signal. A design in CMOS 0.35mm technology presents and input capacitance <15fF and occupies and area of 0.03mm2. The application of these two techniques in combination with a loop-back test architecture significantly enhances the testability of a wireless transceiver system

High-speed Time-interleaved Digital-to-Analog Converter (TI-DAC) for Self-Interference Cancellation Applications

Nowadays, the need for higher data-rate is constantly growing to enhance the quality of the daily communication services. The full-duplex (FD) communication is exemplary method doubling the data-rate compared to half-duplex one. However, part of the strong output signal of the transmitter interferes to the receiver-side because they share the same antenna with limited attenuation and, as a result, the receiver’s performance is corrupted. Hence, it is critical to remove the leakage signal from the receiver’s path by designing another block called self-interference cancellation (SIC). The main goal of this dissertation is to develop the SIC block embedded in the current-mode FD receivers. To this end, the regenerated cancellation current signal is fed to the inputs of the base-band filter and after the mixer of a (direct-conversion) current-mode FD receiver. Since the pattern of the transmitter (the digital signal generated by DSP) is known, a high-speed digital-to-Analog converter (DAC) with medium-resolution can perfectly suppress main part of the leakage on the receiver path. A capacitive DAC (CDAC) is chosen among the available solutions because it is compatible with advanced CMOS technology for high-speed application and the medium-resolution designs. Although the main application of the design is to perform the cancellation, it can also be employed as a stand-alone DAC in the Analog (I/Q) transmitter. The SIC circuitry includes a trans-impedance amplifier (TIA), two DACs, high-speed digital circuits, and built-in-self-test section (BIST). According to the available specification for full-duplex communication system, the resolution and working frequency of the CDAC are calculated (designed) equal to 10-bit (3 binary+ 2 binary + 5 thermometric) and 1GHz, respectively. In order to relax the design of the TIA (settling time of the DAC), the CDAC implements using 2-way time-interleaved (TI) manner (the effective SIC frequency equals 2GHz) without using any calibration technique. The CDAC is also developed with the split-capacitor technique to lower the negative effects of the conventional binary-weighted DAC. By adding one extra capacitor on the left-side of the split-capacitor, LSB-side, the value of the split-capacitor can be chosen as an integer value of the unit capacitor. As a result, it largely enhances the linearity of the CADC and cancellation performance. If the block works as a stand-alone DAC with non-TI mode, the digital input code representing a Sinus waveform with an amplitude 1dB less than full-scale and output frequency around 10.74MHz, chosen by coherent sampling rule, then the ENOB, SINAD, SFDR, and output signal are 9.4-bit, 58.2 dB, 68.4dBc, and -9dBV. The simulated value of the |DNL| (static linearity) is also less than 0.7. The similar simulation was done in the SIC mode while the capacitive-array woks in the TI mode and cancellation current is set to the full-scale. Hence, the amount of cancelling the SI signal at the output of the TIA, SNDR, SFDR, SNDRequ. equals 51.3dB, 15.1 dB, 24dBc, 66.4 dB. The designed SIC cannot work as a closed-loop design. The layout was optimally drawn in order to minimize non-linearity, the power-consumption of the decoders, and reduce the complexity of the DAC. By distributing the thermometric cells across the array and using symmetrical switching scheme, the DAC is less subjected to the linear and gradient effect of the oxide. Based on the post-layout simulation results, the deviation of the design after drawing the layout is studied. To compare the results of the schematic and post-layout designs, the exact conditions of simulation above (schematic simulations) are used. When the block works as a stand-alone CDAC, the ENOB, SINAD, SFDR are 8.5-bit, 52.6 dB, 61.3 dBc. The simulated value of the |DNL| (static linearity) is also limited to 1.3. Likewise, the SI signal at the output of the TIA, SNDR, SFDR, SNDRequ. are equal to 44dB, 11.7 dB, 19 dBc, 55.7 dB

Constraint-driven RF test stimulus generation and built-in test

With the explosive growth in wireless applications, the last decade witnessed an ever-increasing test challenge for radio frequency (RF) circuits. While the design community has pushed the envelope far into the future, by expanding CMOS process to be used with high-frequency wireless devices, test methodology has not advanced at the same pace. Consequently, testing such devices has become a major bottleneck in high-volume production, further driven by the growing need for tighter quality control. RF devices undergo testing during the prototype phase and during high-volume manufacturing (HVM). The benchtop test equipment used throughout prototyping is very precise yet specialized for a subset of functionalities. HVM calls for a different kind of test paradigm that emphasizes throughput and sufficiency, during which the projected performance parameters are measured one by one for each device by automated test equipment (ATE) and compared against defined limits called specifications. The set of tests required for each product differs greatly in terms of the equipment required and the time taken to test individual devices. Together with signal integrity, precision, and repeatability concerns, the initial cost of RF ATE is prohibitively high. As more functionality and protocols are integrated into a single RF device, the required number of specifications to be tested also increases, adding to the overall cost of testing, both in terms of the initial and recurring operating costs. In addition to the cost problem, RF testing proposes another challenge when these components are integrated into package-level system solutions. In systems-on-packages (SOP), the test problems resulting from signal integrity, input/output bandwidth (IO), and limited controllability and observability have initiated a paradigm shift in high-speed analog testing, favoring alternative approaches such as built-in tests (BIT) where the test functionality is brought into the package. This scheme can make use of a low-cost external tester connected through a low-bandwidth link in order to perform demanding response evaluations, as well as make use of the analog-to-digital converters and the digital signal processors available in the package to facilitate testing. Although research on analog built-in test has demonstrated hardware solutions for single specifications, the paradigm shift calls for a rather general approach in which a single methodology can be applied across different devices, and multiple specifications can be verified through a single test hardware unit, minimizing the area overhead. Specification-based alternate test methodology provides a suitable and flexible platform for handling the challenges addressed above. In this thesis, a framework that integrates ATE and system constraints into test stimulus generation and test response extraction is presented for the efficient production testing of high-performance RF devices using specification-based alternate tests. The main components of the presented framework are as follows: Constraint-driven RF alternate test stimulus generation: An automated test stimulus generation algorithm for RF devices that are evaluated by a specification-based alternate test solution is developed. The high-level models of the test signal path define constraints in the search space of the optimized test stimulus. These models are generated in enough detail such that they inherently define limitations of the low-cost ATE and the I/O restrictions of the device under test (DUT), yet they are simple enough that the non-linear optimization problem can be solved empirically in a reasonable amount of time. Feature extractors for BIT: A methodology for the built-in testing of RF devices integrated into SOPs is developed using additional hardware components. These hardware components correlate the high-bandwidth test response to low bandwidth signatures while extracting the test-critical features of the DUT. Supervised learning is used to map these extracted features, which otherwise are too complicated to decipher by plain mathematical analysis, into the specifications under test. Defect-based alternate testing of RF circuits: A methodology for the efficient testing of RF devices with low-cost defect-based alternate tests is developed. The signature of the DUT is probabilistically compared with a class of defect-free device signatures to explore possible corners under acceptable levels of process parameter variations. Such a defect filter applies discrimination rules generated by a supervised classifier and eliminates the need for a library of possible catastrophic defects.Ph.D.Committee Chair: Chatterjee, Abhijit; Committee Member: Durgin, Greg; Committee Member: Keezer, David; Committee Member: Milor, Linda; Committee Member: Sitaraman, Sures

Design and debugging of multi-step analog to digital converters

With the fast advancement of CMOS fabrication technology, more and more signal-processing functions are implemented in the digital domain for a lower cost, lower power consumption, higher yield, and higher re-configurability. The trend of increasing integration level for integrated circuits has forced the A/D converter interface to reside on the same silicon in complex mixed-signal ICs containing mostly digital blocks for DSP and control. However, specifications of the converters in various applications emphasize high dynamic range and low spurious spectral performance. It is nontrivial to achieve this level of linearity in a monolithic environment where post-fabrication component trimming or calibration is cumbersome to implement for certain applications or/and for cost and manufacturability reasons. Additionally, as CMOS integrated circuits are accomplishing unprecedented integration levels, potential problems associated with device scaling – the short-channel effects – are also looming large as technology strides into the deep-submicron regime. The A/D conversion process involves sampling the applied analog input signal and quantizing it to its digital representation by comparing it to reference voltages before further signal processing in subsequent digital systems. Depending on how these functions are combined, different A/D converter architectures can be implemented with different requirements on each function. Practical realizations show the trend that to a first order, converter power is directly proportional to sampling rate. However, power dissipation required becomes nonlinear as the speed capabilities of a process technology are pushed to the limit. Pipeline and two-step/multi-step converters tend to be the most efficient at achieving a given resolution and sampling rate specification. This thesis is in a sense unique work as it covers the whole spectrum of design, test, debugging and calibration of multi-step A/D converters; it incorporates development of circuit techniques and algorithms to enhance the resolution and attainable sample rate of an A/D converter and to enhance testing and debugging potential to detect errors dynamically, to isolate and confine faults, and to recover and compensate for the errors continuously. The power proficiency for high resolution of multi-step converter by combining parallelism and calibration and exploiting low-voltage circuit techniques is demonstrated with a 1.8 V, 12-bit, 80 MS/s, 100 mW analog to-digital converter fabricated in five-metal layers 0.18-µm CMOS process. Lower power supply voltages significantly reduce noise margins and increase variations in process, device and design parameters. Consequently, it is steadily more difficult to control the fabrication process precisely enough to maintain uniformity. Microscopic particles present in the manufacturing environment and slight variations in the parameters of manufacturing steps can all lead to the geometrical and electrical properties of an IC to deviate from those generated at the end of the design process. Those defects can cause various types of malfunctioning, depending on the IC topology and the nature of the defect. To relive the burden placed on IC design and manufacturing originated with ever-increasing costs associated with testing and debugging of complex mixed-signal electronic systems, several circuit techniques and algorithms are developed and incorporated in proposed ATPG, DfT and BIST methodologies. Process variation cannot be solved by improving manufacturing tolerances; variability must be reduced by new device technology or managed by design in order for scaling to continue. Similarly, within-die performance variation also imposes new challenges for test methods. With the use of dedicated sensors, which exploit knowledge of the circuit structure and the specific defect mechanisms, the method described in this thesis facilitates early and fast identification of excessive process parameter variation effects. The expectation-maximization algorithm makes the estimation problem more tractable and also yields good estimates of the parameters for small sample sizes. To allow the test guidance with the information obtained through monitoring process variations implemented adjusted support vector machine classifier simultaneously minimize the empirical classification error and maximize the geometric margin. On a positive note, the use of digital enhancing calibration techniques reduces the need for expensive technologies with special fabrication steps. Indeed, the extra cost of digital processing is normally affordable as the use of submicron mixed signal technologies allows for efficient usage of silicon area even for relatively complex algorithms. Employed adaptive filtering algorithm for error estimation offers the small number of operations per iteration and does not require correlation function calculation nor matrix inversions. The presented foreground calibration algorithm does not need any dedicated test signal and does not require a part of the conversion time. It works continuously and with every signal applied to the A/D converter. The feasibility of the method for on-line and off-line debugging and calibration has been verified by experimental measurements from the silicon prototype fabricated in standard single poly, six metal 0.09-µm CMOS process

A self-calibrated, reconfigurable RF LNA

Modern wireless System-on-Chips (SoCs), such as mobile handsets, sensor networks, and mm-wave systems, integrate an entire RF system on a single CMOS chip. Such highly complex systems require significant on-chip digital signal processing to help improve the performance of highly sensitive analog/RF components. The IC market being competitive, the ability to achieve first pass silicon success is crucial, due to very high processing and testing time cost. Unfortunately, the ability to achieve first-pass silicon success is becoming increasingly more difficult, due to higher system complexity, higher frequency of operation, increased performance requirements, and higher process skews. This thesis presents a 2.4 GHz, reconfigurable RF Low Noise Amplifier (LNA) using on-chip peak detection and calibration, to mitigate the deleterious effects of process, voltage and temperature (PVT) variations. The LNA can reconfigure its input impedance matching, as well as its gain. On-chip detection of optimal input/output impedance matching is performed using an amplitude peak detector. A low power, robust maximum peak point calibration scheme is proposed that calibrates the LNA to the resonant frequency of interest. Measurement results show that the calibration of the LNA improves the input matching (S₁₁) by a maximum of 5 dB , and power gain (S₂₁) by 3dB, while not significantly degrading the Noise Figure (NF)