834 research outputs found

    A 120nW 18.5kHz RC oscillator with comparator offset cancellation for ±0.25% temperature stability

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    Integrated low-frequency oscillators can replace crystal oscillators as sleep-mode timers to reduce the size and cost of wireless sensors [1]. Since the timer is one of the few continuously functioning circuits, minimizing its power consumption can greatly reduce sleep-mode power of highly duty-cycled systems. Temperature stability of the oscillator is important in order to minimize timing uncertainly and guard time for the radios, and thus maximizing sleep time. The voltage-averaging feedback method described in [2] achieves high stability in the MHz frequencies, but when scaled to the kHz range, requires very large filters. On the other extreme, gate leakage-based timers have been designed for sub-nW power consumption, but operate in the sub-Hz frequencies [3]. In the past, high accuracy RC oscillators in the kHz range have been designed with feed-forward correction [1] and self-chopped operation [4]. In this work, an offset cancellation architecture achieves long-term frequency stability and temperature stability while operating at lower power

    Efficient start-up of crystal oscillators

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    Techniques for Wideband All Digital Polar Transmission

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    abstract: Modern Communication systems are progressively moving towards all-digital transmitters (ADTs) due to their high efficiency and potentially large frequency range. While significant work has been done on individual blocks within the ADT, there are few to no full systems designs at this point in time. The goal of this work is to provide a set of multiple novel block architectures which will allow for greater cohesion between the various ADT blocks. Furthermore, the design of these architectures are expected to focus on the practicalities of system design, such as regulatory compliance, which here to date has largely been neglected by the academic community. Amongst these techniques are a novel upconverted phase modulation, polyphase harmonic cancellation, and process voltage and temperature (PVT) invariant Delta Sigma phase interpolation. It will be shown in this work that the implementation of the aforementioned architectures allows ADTs to be designed with state of the art size, power, and accuracy levels, all while maintaining PVT insensitivity. Due to the significant performance enhancement over previously published works, this work presents the first feasible ADT architecture suitable for widespread commercial deployment.Dissertation/ThesisDoctoral Dissertation Electrical Engineering 201

    Study of Single-Event Transient Effects on Analog Circuits

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    Radiation in space is potentially hazardous to microelectronic circuits and systems such as spacecraft electronics. Transient effects on circuits and systems from high energetic particles can interrupt electronics operation or crash the systems. This phenomenon is particularly serious in complementary metal-oxide-semiconductor (CMOS) integrated circuits (ICs) since most of modern ICs are implemented with CMOS technologies. The problem is getting worse with the technology scaling down. Radiation-hardening-by-design (RHBD) is a popular method to build CMOS devices and systems meeting performance criteria in radiation environment. Single-event transient (SET) effects in digital circuits have been studied extensively in the radiation effect community. In recent years analog RHBD has been received increasing attention since analog circuits start showing the vulnerability to the SETs due to the dramatic process scaling. Analog RHBD is still in the research stage. This study is to further study the effects of SET on analog CMOS circuits and introduces cost-effective RHBD approaches to mitigate these effects. The analog circuits concerned in this study include operational amplifiers (op amps), comparators, voltage-controlled oscillators (VCOs), and phase-locked loops (PLLs). Op amp is used to study SET effects on signal amplitude while the comparator, the VCO, and the PLL are used to study SET effects on signal state during transition time. In this work, approaches based on multi-level from transistor, circuit, to system are presented to mitigate the SET effects on the aforementioned circuits. Specifically, RHBD approach based on the circuit level, such as the op amp, adapts the auto-zeroing cancellation technique. The RHBD comparator implemented with dual-well and triple-well is studied and compared at the transistor level. SET effects are mitigated in a LC-tank oscillator by inserting a decoupling resistor. The RHBD PLL is implemented on the system level using triple modular redundancy (TMR) approach. It demonstrates that RHBD at multi-level can be cost-effective to mitigate the SEEs in analog circuits. In addition, SETs detection approaches are provided in this dissertation so that various mitigation approaches can be implemented more effectively. Performances and effectiveness of the proposed RHBD are validated through SPICE simulations on the schematic and pulsed-laser experiments on the fabricated circuits. The proposed and tested RHBD techniques can be applied to other relevant analog circuits in the industry to achieve radiation-tolerance

    Time-Domain/Digital Frequency Synchronized Hysteresis Based Fully Integrated Voltage Regulator

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    abstract: Power management integrated circuit (PMIC) design is a key module in almost all electronics around us such as Phones, Tablets, Computers, Laptop, Electric vehicles, etc. The on-chip loads such as microprocessors cores, memories, Analog/RF, etc. requires multiple supply voltage domains. Providing these supply voltages from off-chip voltage regulators will increase the overall system cost and limits the performance due to the board and package parasitics. Therefore, an on-chip fully integrated voltage regulator (FIVR) is required. The dissertation presents a topology for a fully integrated power stage in a DC-DC buck converter achieving a high-power density and a time-domain hysteresis based highly integrated buck converter. A multi-phase time-domain comparator is proposed in this work for implementing the hysteresis control, thereby achieving a process scaling friendly highly digital design. A higher-order LC notch filter along with a flying capacitor which couples the input and output voltage ripple is implemented. The power stage operates at 500 MHz and can deliver a maximum power of 1.0 W and load current of 1.67 A, while occupying 1.21 mm2 active die area. Thus achieving a power density of 0.867 W/mm2 and current density of 1.377 A/mm2. The peak efficiency obtained is 71% at 780 mA of load current. The power stage with the additional off-chip LC is utilized to design a highly integrated current mode hysteretic buck converter operating at 180 MHz. It achieves 20 ns of settling and 2-5 ns of rise/fall time for reference tracking. The second part of the dissertation discusses an integrated low voltage switched-capacitor based power sensor, to measure the output power of a DC-DC boost converter. This approach results in a lower complexity, area, power consumption, and a lower component count for the overall PV MPPT system. Designed in a 180 nm CMOS process, the circuit can operate with a supply voltage of 1.8 V. It achieves a power sense accuracy of 7.6%, occupies a die area of 0.0519 mm2, and consumes 0.748 mW of power.Dissertation/ThesisDoctoral Dissertation Electrical Engineering 201

    Design of an RC Oscillator for Automotive Applications

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    Tato práce je zaměřena na návrh integrovaného relaxačního oscilátoru pro automobilové aplikace, které jsou charakteristické extrémními provozními podmínkami a vysokými požadavky na robustnost. Z dostupné literatury byla provedena rešerše, která umožnila postihnout nezbytný teoretický základ pro komparativní studii nedávno představených designů integrovaných oscilátorů a také pomohla navrhnout architekturu oscilátoru, která v implementaci zahrnuje princip IEF. Za účelem předpovězení negativních vlivů na výkon systému a optimálních parametrů bloků byly provedeny simulace vysokoúrovňového modelu. V práci je diskutována implementace jednotlivých bloků a prezentovány výsledky simulace kritických parametrů. Simulace navrženého oscilátoru prokázaly konzistenci konceptu IEF pro praktickou realizaci. Realizovaný systém však potřebuje další vylepšení.The thesis is aimed on the integrated relaxation oscillator design for automotive applications, that are characterized by harsh operation conditions and high robustness requirements. Literature research was conducted to acquire necessary theoretical basis for comparative study of the recently proposed integrated oscillator designs to choose the oscillator architecture utilizing integrated-error feedback for the implementation. High-level model simulations were conducted to predict negative influences on the system performance and to suggest blocks optimal parameters for the design. The implementation of the designed blocks was discussed, and simulation results of the critical parameters were presented. The designed oscillator simulations proved the consistency of the integrated-error feedback concept for practical realization. However, the designed system needs further improvements

    Towards minimum achievable phase noise of relaxation oscillators

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    A relaxation oscillator design is described, which has a phase noise rivaling ring oscillators, while also featuring linear frequency tuning. We show that the comparator in a relaxation-oscillator loop can be prevented from contributing to 1/f2 colored phase noise and degrading control linearity. The resulting oscillator is implemented in a power efficient way with a switched-capacitor circuit. The design results from a thorough analysis of the fundamental phase noise contributions. Simple expressions modeling the theoretical phase noise performance limit are presented, as well as a design strategy to approach this limit. To verify theoretical predictions, a relaxation oscillator is implemented in a baseline 65 nm CMOS process, occupying 200 µm × 150 µm. Its frequency tuning range is 1–12 MHz, and its phase noise is L(100kHz) = −109dBc/Hz at fosc = 12MHz, while consuming 90 μW. A figure of merit of −161dBc/Hz is achieved, which is only 4 dB from the theoretical limit

    Circuits and Systems for On-Chip RF Chemical Sensors and RF FDD Duplexers

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    Integrating RF bio-chemical sensors and RF duplexers helps to reduce cost and area in the current applications. Furthermore, new applications can exist based on the large scale integration of these crucial blocks. This dissertation addresses the integration of RF bio-chemical sensors and RF duplexers by proposing these initiatives. A low power integrated LC-oscillator-based broadband dielectric spectroscopy (BDS) system is presented. The real relative permittivity ε’r is measured as a shift in the oscillator frequency using an on-chip frequency-to-digital converter (FDC). The imaginary relative permittivity ε”r increases the losses of the oscillator tank which mandates a higher dc biasing current to preserve the same oscillation amplitude. An amplitude-locked loop (ALL) is used to fix the amplitude and linearize the relation between the oscillator bias current and ε”r. The proposed BDS system employs a sensing oscillator and a reference oscillator where correlated double sampling (CDS) is used to mitigate the impact of flicker noise, temperature variations and frequency drifts. A prototype is implemented in 0.18 µm CMOS process with total chip area of 6.24 mm^2 to operate in 1-6 GHz range using three dual bands LC oscillators. The achieved standard deviation in the air is 2.1 ppm for frequency reading and 110 ppm for current reading. A tunable integrated electrical balanced duplexer (EBD) is presented as a compact alternative to multiple bulky SAW and BAW duplexers in 3G/4G cellular transceivers. A balancing network creates a replica of the transmitter signal for cancellation at the input of a single-ended low noise amplifier (LNA) to isolate the receive path from the transmitter. The proposed passive EBD is based on a cross-connected transformer topology without the need of any extra balun at the antenna side. The duplexer achieves around 50 dB TX-RX isolation within 1.6-2.2 GHz range up to 22 dBm. The cascaded noise figure of the duplexer and LNA is 6.5 dB, and TX insertion loss (TXIL) of the duplexer is about 3.2 dB. The duplexer and LNA are implemented in 0.18 µm CMOS process and occupy an active area of 0.35 mm^2
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