74,401 research outputs found

    Development of mirror coatings for gravitational-wave detectors

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    Gravitational waves are detected by measuring length changes between mirrors in the arms of kilometrelong Michelson interferometers. Brownian thermal noise arising from thermal vibrations of the mirrors can limit the sensitivity to distance changes between the mirrors, and, therefore, the ability to measure gravitational-wave signals. Thermal noise arising from the highly reflective mirror coatings will limit the sensitivity both of current detectors (when they reach design performance) and of planned future detectors. Therefore, the development of coatings with low thermal noise, which at the same time meet strict optical requirements, is of great importance. This article gives an overview of the current status of coatings and of the different approaches for coating improvement. This article is part of a discussion meeting issue ‘The promises of gravitational-wave astronomy’

    A high-Tc 4-bit periodic threshold analog-to-digital converter

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    Using ramp-type Josephson junctions a 4-bit periodic threshold ADC has been designed, fabricated and tested. Practical design constraints will be discussed in terms of noise immunity, flux flow, available technology, switching speed etc. In a period of four years we fabricated about 100 chips in order to bring the technology to an acceptable level and to test various designs and circuit layouts. This resulted in a basic comparator that is rather insensitive to the stray field generated by the analog input signal or variations in mask alignment during fabrication. The input signal is fed into the comparators using a resistive divider network. Full functionality at low frequencies has been demonstrate

    Overview of CMOS process and design options for image sensor dedicated to space applications

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    With the growth of huge volume markets (mobile phones, digital cameras…) CMOS technologies for image sensor improve significantly. New process flows appear in order to optimize some parameters such as quantum efficiency, dark current, and conversion gain. Space applications can of course benefit from these improvements. To illustrate this evolution, this paper reports results from three technologies that have been evaluated with test vehicles composed of several sub arrays designed with some space applications as target. These three technologies are CMOS standard, improved and sensor optimized process in 0.35µm generation. Measurements are focussed on quantum efficiency, dark current, conversion gain and noise. Other measurements such as Modulation Transfer Function (MTF) and crosstalk are depicted in [1]. A comparison between results has been done and three categories of CMOS process for image sensors have been listed. Radiation tolerance has been also studied for the CMOS improved process in the way of hardening the imager by design. Results at 4, 15, 25 and 50 krad prove a good ionizing dose radiation tolerance applying specific techniques

    Proceedings of the Cold Electronics Workshop

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    The benefits and problems of the use of cold semiconductor electronics and the research and development effort required to bring cold electronics into more widespread use were examined

    Ultra-Thin Chip Package (UTCP) and stretchable circuit technologies for wearable ECG system

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    A comfortable, wearable wireless ECG monitoring system is proposed. The device is realized using the combination of two proprietary advanced technologies for electronic packaging and interconnection : the UTCP (Ultra-Thin Chip Package) technology and the SMI (Stretchable Mould Interconnect) technology for elastic and stretchable circuits. Introduction of these technologies results in small fully functional devices, exhibiting a significant increase in user comfort compared to devices fabricated with more conventional packaging and interconnection technologies

    An Extended CMOS ISFET Model Incorporating the Physical Design Geometry and the Effects on Performance and Offset Variation

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    This paper presents an extended model for the CMOS-based ion-sensitive field-effect transistor, incorporating design parameters associated with the physical geometry of the device. This can, for the first time, provide a good match between calculated and measured characteristics by taking into account the effects of nonidealities such as threshold voltage variation and sensor noise. The model is evaluated through a number of devices with varying design parameters (chemical sensing area and MOSFET dimensions) fabricated in a commercially available 0.35-µm CMOS technology. Threshold voltage, subthreshold slope, chemical sensitivity, drift, and noise were measured and compared with the simulated results. The first- and second-order effects are analyzed in detail, and it is shown that the sensors' performance was in agreement with the proposed model

    Sensitivity Studies for Third-Generation Gravitational Wave Observatories

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    Advanced gravitational wave detectors, currently under construction, are expected to directly observe gravitational wave signals of astrophysical origin. The Einstein Telescope, a third-generation gravitational wave detector, has been proposed in order to fully open up the emerging field of gravitational wave astronomy. In this article we describe sensitivity models for the Einstein Telescope and investigate potential limits imposed by fundamental noise sources. A special focus is set on evaluating the frequency band below 10Hz where a complex mixture of seismic, gravity gradient, suspension thermal and radiation pressure noise dominates. We develop the most accurate sensitivity model, referred to as ET-D, for a third-generation detector so far, including the most relevant fundamental noise contributions.Comment: 13 pages, 7 picture
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