FVF-Based Low-Dropout Voltage Regulator with Fast Charging/Discharging Paths for Fast Line and Load Regulation

A new internally compensated low drop-out voltage regulator based on the cascoded flipped voltage follower is presented in this paper. Adaptive biasing current and fast charging/discharging paths have been added to rapidly charge and discharge the parasitic capacitance of the pass transistor gate, thus improving the transient response. The proposed regulator was designed with standard 65-nm CMOS technology. Measurements show load and line regulations of 433.80 μV/mA and 5.61 mV/V, respectively. Furthermore, the output voltage spikes are kept under 76 mV for 0.1 mA to 100 mA load variations and 0.9 V to 1.2 V line variations with rise and fall times of 1 μs. The total current consumption is 17.88 μA (for a 0.9 V supply voltage).Ministerio de Economía y Competitividad TEC2015-71072-C3-3-RConsejería de Economía, Innovación y Ciencia. Junta de Andalucía P12-TIC-186

Quasi–digital low–dropout voltage regulators uses controlled pass transistors

This article presents a low quiescent current outputcapacitorless quasi-digital CMOS LDO regulator with controlled pass transistors according to load demands. The pass transistor of the LDO is broken up to two smaller sizes based on a breakup criterion defined here, which considers the maximum output voltage variations to different load current steps to find the suitable current boundary for breaking up. This criterion shows that low load conditions will cause more output variations and settling time if the pass transistor is used in its maximum size. Therefore, using one smaller transistor for low load currents, and another one larger for higher currents, is the best trade-off between output variations, complexity, and power dissipation. The proposed LDO regulator has been designed and post-simulated in HSPICE in a 0.35 µm CMOS process to supply a load current between 0-100 mA while consumes 7.6 µA quiescent current. The results reveal 46% and 69% improvement on the output voltage variations and settling time, respectively.Postprint (published version

Output-Capacitorless CMOS LDO Regulator Based on High Slew-Rate Current-Mode Transconductance Amplifier

A low quiescent current output-capacitorless CMOS LDO regulator based on a high slew-rate current-mode transconductance amplifier (CTA) as an error amplifier is presented. Load transient characteristic of the proposed LDO is improved even at low quiescent currents, by using a local common-mode feedback (LCMFB) in the proposed CTA. This provides an increase in the order of transfer characteristic of the circuit, thereby enhancing the slew-rate at the gate of pass transistor. The proposed CTA-based LDO topology has been designed and post-layout simulated in HSPICE, in a 0.18 μm CMOS process to supply a load current between 0-100 mA. Postlayout simulation results reveal that the proposed LDO is stable without any internal compensation strategy and with on-chip output capacitor or lumped parasitic capacitances at the output node between 10-100 pF.Postprint (published version

A low quiescent current low dropout voltage regulator with self-compensation

This paper proposed a low quiescent current low-dropout voltage regulator (LDO) with self-compensation loop stability. This LDO is designed for Silicon-on-Chip (SoC) application without off-chip compensation capacitor. Worst case loop stability phenomenon happen when LDO output load current (Iload) is zero. The second pole frequency decreased tremendously towards unity-gain frequency (UGF) and compromise loop stability. To prevent this, additional current is needed to keep the output in low impedance in order to maintain second pole frequency. As Iload slowly increases, the unneeded additional current can be further reduced. This paper presents a circuit which performed self-reduction on this current by sensing the Iload. On top of that, a self-compensation circuit technique is proposed where loop stability is self-attained when Iload reduced below 100μA. In this technique, unity-gain frequency (UGF) will be decreaed and move away from second pole in order to attain loop stability. The decreased of UGF is done by reducing the total gain while maintaining the dominant pole frequency. This technique has also further reduced the total quiescent current and improved the LDO’s efficiency. The proposed LDO exhibits low quiescent current 9.4μA and 17.7μA, at Iload zero and full load 100mA respectively. The supply voltage for this LDO is 1.2V with 200mV drop-out voltage. The design is validated using 0.13μm CMOS process technology

Output-capacitorless segmented low-dropout voltage regulator with controlled pass transistors

This article presents a low quiescent current output-capacitorless quasi-digital complementary metal-oxide-semiconductor (CMOS) low-dropout (LDO) voltage regulator with controlled pass transistors according to load demands. The pass transistor of the LDO is segmented into two smaller sizes based on a proposed segmentation criterion, which considers the maximum output voltage transient variations due to the load transient to different load current steps to find the suitable current boundary for segmentation. This criterion shows that low load conditions will cause more output variations and settling time if the pass transistor is used in its maximum size. Furthermore, this situation is the worst case for stability requirements of the LDO. Therefore, using one smaller transistor for low load currents and another one larger for higher currents, a proper trade-off between output variations, complexity, and power dissipation is achieved. The proposed LDO regulator has been designed and post-simulated in HSPICE in a 0.18¿µm CMOS process to supply a stable load current between 0 and 100¿mA with a 40¿pF on-chip output capacitor, while consuming 4.8¿µA quiescent current. The dropout voltage of the LDO is set to 200¿mV for 1.8¿V input voltage. The results reveal an improvement of approximately 53% and 25% on the output voltage variations and settling time, respectively.Peer ReviewedPostprint (author's final draft

Design consideration in low dropout voltage regulator for batteryless power management unit

Harvesting energy from ambient Radio Frequency (RF) source is a great deal toward batteryless Internet of Thing (IoT) System on Chip (SoC) application as green technology has become a future interest. However, the harvested energy is unregulated thus it is highly susceptible to noise and cannot be used efficiently. Therefore, a dedicated low noise and high Power Supply Ripple Rejection (PSRR) of Low Dropout (LDO) voltage regulator are needed in the later stages of system development to supply the desired load voltage. Detailed analysis of the noise and PSRR of an LDO is not sufficient. This work presents a design of LDO to generate a regulated output voltage of 1.8V from 3.3V input supply targeted for 120mA load application. The performance of LDO is evaluated and analyzed. The PSRR and noise in LDO have been investigated by applying a low-pass filter. The proposed design achieves the design specification through the simulation results by obtaining 90.85dB of open-loop gain, 76.39º of phase margin and 63.46dB of PSRR respectively. The post-layout simulation shows degradation of gain and maximum load current due to parasitic issue. The measurement of maximum load regulation is dropped to 96mA compared 140mA from post-layout. The proposed LDO is designed using 180nm Silterra CMOS process technology