Quasi-digital low-dropout voltage regulators uses controlled pass transistors

This article presents a low quiescent current output capacitorless quasi-digital CMOS LDO regulator with controlled pass transistors according to load demands. The pass transistor of the LDO is broken up to two smaller sizes based on a breakup criterion defined here, which considers the maximum output voltage variations to different load current steps to find the suitable current boundary for breaking up. This criterion shows that low load conditions will cause more output variations and settling time if the pass transistor is used in its maximum size. Therefore, using one smaller transistor for low load currents, and another one larger for higher currents, is the best trade-off between output variations, complexity, and power dissipation. The proposed LDO regulator has been designed and post-simulated in HSPICE in a 0.35 µm CMOS process to supply a load current between 0-100 mA while consumes 7.6 µA quiescent current. The results reveal 46% and 69% improvement on the output voltage variations and settling time, respectively.Postprint (published version

Development of high-performance low-dropout regulators for SoC applications.

Or, Pui Ying."July 2010."Thesis (M.Phil.)--Chinese University of Hong Kong, 2010.Includes bibliographical references.Abstracts in English and Chinese.AcknowledgmentsTable of ContentList of FiguresList of TablesList of PublicationsChapter Chapter 1 - --- Background of LDO ResearchChapter 1.1 --- Structure of a LDO --- p.1-1Chapter 1.2 --- Principle of Operation of LDO --- p.1-2Chapter 1.3 --- Steady-State Specification of LDO --- p.1-3Chapter 1.4 --- High-Frequency Specification of LDO --- p.1-3Chapter 1.5 --- Dynamic Specification of LDO --- p.1-4Chapter 1.6 --- An Advanced LDO Structure --- p.1-4Chapter 1.7 --- Contribution and Outline of the Thesis --- p.1-5References --- p.1-6Chapter Chapter 2 - --- PSRR AnalysisChapter 2.1 --- Modeling of the PSRR of LDO --- p.2-3Chapter 2.2 --- Analysis of LDO Circuit Using Proposed Modeling --- p.2-6Chapter 2.3 --- Conclusion of Chapter --- p.2-12References --- p.2-13Chapter Chapter 3- --- An Output-Capacitorless LDO with Direct Voltage-Spike DetectionChapter 3.1 --- Analysis of Output-Capacitorless LDO --- p.3-5Chapter 3.2 --- LDO with Proposed Voltage-Spike Detection Circuit --- p.3-7Chapter 3.3 --- Experimental Results --- p.3-15Chapter 3.4 --- Conclusion of Chapter --- p.3-21References --- p.3-22Chapter Chapter 4 - --- A LDO with Impedance Adjustment and Loop-Gain Boosting TechniqueChapter 4.1 --- Proposed LDO --- p.4-3Chapter 4.2 --- Experimental Results --- p.4-7Chapter 4.3 --- Comparison --- p.4-11Chapter 4.4 --- Conclusion of Chapter --- p.4-12Reference --- p.4-13Chapter Chapter 5 - --- Conclusion and Future Wor

FVF-Based Low-Dropout Voltage Regulator with Fast Charging/Discharging Paths for Fast Line and Load Regulation

A new internally compensated low drop-out voltage regulator based on the cascoded flipped voltage follower is presented in this paper. Adaptive biasing current and fast charging/discharging paths have been added to rapidly charge and discharge the parasitic capacitance of the pass transistor gate, thus improving the transient response. The proposed regulator was designed with standard 65-nm CMOS technology. Measurements show load and line regulations of 433.80 μV/mA and 5.61 mV/V, respectively. Furthermore, the output voltage spikes are kept under 76 mV for 0.1 mA to 100 mA load variations and 0.9 V to 1.2 V line variations with rise and fall times of 1 μs. The total current consumption is 17.88 μA (for a 0.9 V supply voltage).Ministerio de Economía y Competitividad TEC2015-71072-C3-3-RConsejería de Economía, Innovación y Ciencia. Junta de Andalucía P12-TIC-186

Quasi–digital low–dropout voltage regulators uses controlled pass transistors

This article presents a low quiescent current outputcapacitorless quasi-digital CMOS LDO regulator with controlled pass transistors according to load demands. The pass transistor of the LDO is broken up to two smaller sizes based on a breakup criterion defined here, which considers the maximum output voltage variations to different load current steps to find the suitable current boundary for breaking up. This criterion shows that low load conditions will cause more output variations and settling time if the pass transistor is used in its maximum size. Therefore, using one smaller transistor for low load currents, and another one larger for higher currents, is the best trade-off between output variations, complexity, and power dissipation. The proposed LDO regulator has been designed and post-simulated in HSPICE in a 0.35 µm CMOS process to supply a load current between 0-100 mA while consumes 7.6 µA quiescent current. The results reveal 46% and 69% improvement on the output voltage variations and settling time, respectively.Postprint (published version

Output-capacitorless segmented low-dropout voltage regulator with controlled pass transistors

This article presents a low quiescent current output-capacitorless quasi-digital complementary metal-oxide-semiconductor (CMOS) low-dropout (LDO) voltage regulator with controlled pass transistors according to load demands. The pass transistor of the LDO is segmented into two smaller sizes based on a proposed segmentation criterion, which considers the maximum output voltage transient variations due to the load transient to different load current steps to find the suitable current boundary for segmentation. This criterion shows that low load conditions will cause more output variations and settling time if the pass transistor is used in its maximum size. Furthermore, this situation is the worst case for stability requirements of the LDO. Therefore, using one smaller transistor for low load currents and another one larger for higher currents, a proper trade-off between output variations, complexity, and power dissipation is achieved. The proposed LDO regulator has been designed and post-simulated in HSPICE in a 0.18¿µm CMOS process to supply a stable load current between 0 and 100¿mA with a 40¿pF on-chip output capacitor, while consuming 4.8¿µA quiescent current. The dropout voltage of the LDO is set to 200¿mV for 1.8¿V input voltage. The results reveal an improvement of approximately 53% and 25% on the output voltage variations and settling time, respectively.Peer ReviewedPostprint (author's final draft

Design of low-dropout regulator for ultra low power on-chip applications

Low Drop Out (LDO) voltage regulators are commonly used to supply low-voltage digital circuits such as microprocessor cores. These digital circuits normally are continuously changing from one mode of operation to another. Therefore, the load demand can change rapidly resulting in large voltage transients at the output of the regulator which can adversely affect the digital circuitry. In this Master's Thesis, design topologies and challenges of very low-power fully integrated On-Chip Low-Dropout (LDO) regulators have been analyzed. Instead of conventional LDO which makes use of a large external capacitor to have better dynamic response and stability, a CapacitorLess LDO (CL-LDO) is chosen on considerations of smaller area. The most challenging part of designing this kind of regulator is achieving high current efficiency by reducing the quiescent current while ensuring good stability response as well as good regulation performance. Thus, different circuit techniques must be carefully added in order to balance the lack of the large external capacitor having the minimum impact on system efficiency. This work focuses on designing a fully integrated low-dropout regulator with good dynamic performance, high regulation performance and ultra-low power consumption. The stability is achieved by the use of two pole-splitting techniques, namely Cascode and Nested-Miller compensation. The good dynamic response with low quiescent current are achieved by the use of an adaptive biasing circuit, a gm-boost circuit and adaptive power transistor architecture

Ultra-low Quiescent Current NMOS Low Dropout Regulator With Fast Transient response for Always-On Internet-of-Things Applications

abstract: The increased adoption of Internet-of-Things (IoT) for various applications like smart home, industrial automation, connected vehicles, medical instrumentation, etc. has resulted in a large scale distributed network of sensors, accompanied by their power supply regulator modules, control and data transfer circuitry. Depending on the application, the sensor location can be virtually anywhere and therefore they are typically powered by a localized battery. To ensure long battery-life without replacement, the power consumption of the sensor nodes, the supply regulator and, control and data transmission unit, needs to be very low. Reduction in power consumption in the sensor, control and data transmission is typically done by duty-cycled operation such that they are on periodically only for short bursts of time or turn on only based on a trigger event and are otherwise powered down. These approaches reduce their power consumption significantly and therefore the overall system power is dominated by the consumption in the always-on supply regulator. Besides having low power consumption, supply regulators for such IoT systems also need to have fast transient response to load current changes during a duty-cycled operation. Supply regulation using low quiescent current low dropout (LDO) regulators helps in extending the battery life of such power aware always-on applications with very long standby time. To serve as a supply regulator for such applications, a 1.24 µA quiescent current NMOS low dropout (LDO) is presented in this dissertation. This LDO uses a hybrid bias current generator (HBCG) to boost its bias current and improve the transient response. A scalable bias-current error amplifier with an on-demand buffer drives the NMOS pass device. The error amplifier is powered with an integrated dynamic frequency charge pump to ensure low dropout voltage. A low-power relaxation oscillator (LPRO) generates the charge pump clocks. Switched-capacitor pole tracking (SCPT) compensation scheme is proposed to ensure stability up to maximum load current of 150 mA for a low-ESR output capacitor range of 1 - 47µF. Designed in a 0.25 µm CMOS process, the LDO has an output voltage range of 1V – 3V, a dropout voltage of 240 mV, and a core area of 0.11 mm2.Dissertation/ThesisDoctoral Dissertation Electrical Engineering 201

An external capacitor-less low-dropout voltage regulator using a transconductance amplifier

This paper presents an external capacitor-less NMOS low-dropout (LDO) voltage regulator integrated with a standard CSMC 0.6 μm BiCMOS technology. Over a -55 ∘C to +125 ∘C temperature range, the fabricated LDO provides a stable and considerable amount of 3 A output current over wide ranges of output capacitance COUT (from zero to hundreds of μF ) and effective-series-resistance (ESR) (from tens of milliohms to several ohms). A low dropout voltage of 200 mV has been realised by accurate modelling. Operating with an input voltage ranging from 2.2 V to 5.5 V provides a scalable output voltage from 0.8 V to 3.6 V. When the load current jumps from 100 mA to 3 A within 3 μs, the output voltage overshoot remains as low as 50 mV without output capacitance, COUT. The system bandwidth is about 2 MHz, and hardly changes with load altering to ensure system stability. To improve the load transient response and driving capacity of the NMOS power transistor, a buffer with high input impedance and low output impedance is applied between the transconductance amplifier and the NMOS power transistor. The total area of fabricated LDO voltage regulator chip including pads is 2.1 mm×2.2 mm