The impact of CMOS scaling projected on a 6b full-Nyquist non-calibrated flash ADC

A 6-bit 1.2 Gs/s non-calibrated flash ADC in a standard 45nm CMOS process, that achieves 0.45pJ/conv-step at full Nyquist bandwidth, is presented. Power efficient operation is achieved by a full optimization of amplifier blocks, and by innovations in the comparator and encoding stage. The performance of a non-calibrated flash ADC is directly related to device properties; a scaling analysis of our ADC in and across CMOS technologies gives insight into the excellent usability of 45nm technology for AD converter design

Electronics for Calorimeters at LHC

Some principal design features of front-end electronics for calorimeters in experiments at the LHC will be highlighted. Some concerns arising in the transition from the research and development and design phase to the construction will be discussed. Future challenges will be indicated. (4 refs)

A 12-bit, 40 msamples/s, low-power, low-area pipeline analog-to-digital converter in CMOS 0.18 mum technology.

With advancements in digital signal processing in recent years, the need for high-speed, high-resolution analog-to-digital converters (ADCs) which can be used in the analog front-end has been increasing. Some examples of these applications are image and video signal processing, wireless communications and asymmetrical digital subscriber line (ADSL). In CMOS integrated circuit design, it is desirable to integrate the digital circuit and the ADC in one microchip to reduce the cost of fabrication. Consequently the power dissipation and area of the ADCs are important design factors. The original contributions in this thesis are as follows. Since the performance of pipeline ADCs significantly depends on the op-amps and comparators circuits, the performance of various comparators is analyzed and the effect of op-amp topology on the performance of pipeline ADCs is investigated. This thesis also presents a novel architecture for design of low-power and low-area pipelined ADCs which will be more useful for very low voltage applications in the future. At the schematic level, a low-power CMOS implementation of the current-mode MDAC is presented and an improved voltage comparator is designed. With the proposed design and the optimization methodology it is possible to reduce power dissipation and area compared with conventional fully differential schemes.Dept. of Electrical and Computer Engineering. Paper copy at Leddy Library: Theses & Major Papers - Basement, West Bldg. / Call Number: Thesis2004 .M64. Source: Masters Abstracts International, Volume: 43-01, page: 0281. Adviser: C. Chen. Thesis (M.A.Sc.)--University of Windsor (Canada), 2004

A \u3cem\u3eK\u3c/em\u3e-Delta-1-Sigma Modulator for Wideband Analog to Digital Conversion

As CMOS technology shrinks, the transistor speed K-quantizing paths and can achieve significantly higher conversion bandwidths when compared to the traditional deltasigma ADCs. The 8-path KD1S modulator achieves an SNR of 58 dB (or 9.4-bits resolution) when clocked at 100 MHz for a conversion bandwidth of 6.25 MHz and an effective sampling rate equal to 800 MHz. The KD1S modulator has been fabricated in a 500 nm CMOS process and the experimental results are reported. Deficiencies in the first test chip performance are discussed along with their alleviation to achieve theoretical performance

Design and Analysis of a Low-Power 8-Bit 500 KS/S SAR ADC for Bio-Medical Implant Devices

This thesis project involves the design and analysis of an 8-bit Successive Approximation Register (SAR) Analog to Digital Convertor (ADC), designed for low- power applications such as bio-medical implants. The sampling rate for this ADC is 500 KS/s. The power consumption for the whole SAR ADC system was measured to be 2.1 uW. The novelty of this project is the proposal of an extremely energy efficient comparator architecture. The result is the design of a final ADC with reasonable sampling speed, accuracy and low power consumption. In this project, all the different subsystems have been designed at the transistor level with 45 nm CMOS technology. The logical circuit was designed using Verilog language. It was then synthesized and integrated in the overall system