Gated lateral silicon p-i-n junction photodiodes

Research in silicon photonics has recently seen a significant push to develop complete silicon-based optical components for optical communications. Silicon has shown its potential to overcome the bandwidth limitations of microprocessor interconnect, whereas, the silicon platform has already displayed the benefits of low manufacturing costs and CMOS compatibility. The work on “gated lateral silicon p-i-n junction photodiodes” has demonstrated the silicon potential, to detect optical radiations, compatibility to standard CMOS process flow and tuneable spectral response. The lateral structure of gated p-i-n junction photodiodes contributes to high responsivity to short wavelength radiations in these single and dual gate devices. The final objective of this work was to develop high responsivity, CMOS-compatible silicon photodiodes, where the spectral response can be modulated. The lateral p-i-n junction architecture led to high responsivity values, whereas, the MOS gate structure became the basis for tuneable spectral response. The MOS gate structure, made the devices appear as a transistor to the surrounding circuitry and the gate structure in dual gate devices can be used to modulate the spectral response of the device. Single gate devices showed higher responsivity values and comparatively high blue and ultraviolet (UV) response as compared to conventional photodiodes. Surface depletion region in these devices is utilized by placing a MOS gate structure and by patterning an integrated metal grating to detect polarized light. Single and dual gate devices with two variations were fabricated to characterise the device response. Novel lateral architecture of p-i-n junction photodiodes provides a surface depletion region. It is generally anticipated that photodetectors with surface depletion region might produce higher noise. In these devices the surface depletion region has a lateral continuation of gate dielectric which acts as a passivation layer and thus considerably reduced the noise. Physical device modelling studies were performed to verify the experimentally obtained results, which are provided in the relevant measurement chapters. In these devices the speed of operation is a compromise over the high responsivity, CMOS compatibility and tuneable spectral response

Miniaturized Silicon Photodetectors

Silicon (Si) technologies provide an excellent platform for the design of microsystems where photonic and microelectronic functionalities are monolithically integrated on the same substrate. In recent years, a variety of passive and active Si photonic devices have been developed, and among them, photodetectors have attracted particular interest from the scientific community. Si photodiodes are typically designed to operate at visible wavelengths, but, unfortunately, their employment in the infrared (IR) range is limited due to the neglectable Si absorption over 1100 nm, even though the use of germanium (Ge) grown on Si has historically allowed operations to be extended up to 1550 nm. In recent years, significant progress has been achieved both by improving the performance of Si-based photodetectors in the visible range and by extending their operation to infrared wavelengths. Near-infrared (NIR) SiGe photodetectors have been demonstrated to have a “zero change” CMOS process flow, while the investigation of new effects and structures has shown that an all-Si approach could be a viable option to construct devices comparable with Ge technology. In addition, the capability to integrate new emerging 2D and 3D materials with Si, together with the capability of manufacturing devices at the nanometric scale, has led to the development of new device families with unexpected performance. Accordingly, this Special Issue of Micromachines seeks to showcase research papers, short communications, and review articles that show the most recent advances in the field of silicon photodetectors and their respective applications

Wide bandgap semiconductors for harsh environment imaging: temperature dependence of p-n junction detector efficiency

The majority of image detectors to date have used silicon photodiode arrays for light capture and image formation. However, as imaging is performed in increasingly harsh environments, conventional silicon arrays begin to reach their physical device limitations and fail. Harsh imaging conditions include short wavelengths, high temperatures, and/or high radiation conditions. To aid future detector development, the theoretical energy-conversion efficiency of wide-bandgap semiconductor materials, which are long known for their favorable properties in harsh environments, has been studied. It has been hypothesized, but not shown until now, that wide bandgap semiconductors have better energy-conversion efficiencies at higher temperatures than conventional semiconductor materials. The basic element of the photodiode, the p-n junction, is investigated using fundamental physical equations including the short-circuit current, open-circuit voltage, and energy-conversion efficiency, as a function of temperature and material. The results of several wide-bandgap materials (i.e. GaP, SiC, and GaN) are compared to silicon. The limitations of current silicon detector technologies (CCDs) and the potential of these wide-bandgap semiconductors as imaging and non-imaging devices (e.g. solar cells and alpha-voltaic batteries) are presented. Experimental results showing the normalized to Si energy-conversion efficiency as a function of temperature for Si, InGaP, and SiC substantiate the theoretical conclusions that wide bandgap semiconductors offer better efficiencies at higher temperatures than narrow bandgap semiconductors

CMOS SINGLE-PHOTON AVALANCHE DIODES AND MICROMACHINED OPTICAL FILTERS FOR INTEGRATED FLUORESCENCE SENSING

This dissertation presents a body of work that addresses the two most pressing challenges in the field of integrated fluorescence sensing, namely, the design of integrated optical sensors and the fabrication of high-rejection micro-scale optical filters. Two novel enabling technologies were introduced. They are: the perimeter-gated single-photon avalanche diode (PGSPAD), for on-chip photon counting, and the benzotriazole (BTA)-doped thin-film polymer filter, for on-chip ultraviolet light rejection. Experimental results revealed that the PGSPAD front-end, fabricated in a 0.5 μm standard mixed-signal CMOS process, had the capability of counting photons in the MHz regime. In addition, it was found that a perimeter gate, a structural feature used to suppress edge breakdown in the diode, also maximized the signal-to-noise-ratio in the high-count rate regime whereas it maximized sensitivity at low count rates. On the other hand, BTA-doped filters were demonstrated utilizing three commonly used polymers as hosts. The filters were patternable, utilizing the same procedures traditionally used to pattern the undoped polymer hosts, a key advantage for integration into microsystems. Filter performance was analyzed using a set of metrics developed for optoelectronic characterization of integrated fluorescence sensors; high rejection levels (nearing -40 dB) of UV light were observed in films of only 5 μm in thickness. Ultimately, BTA-doped filters were integrated into a portable sensor, and their use was demonstrated in two types of bioassays

Gated lateral silicon p-i-n junction photodiodes

Research in silicon photonics has recently seen a significant push to develop complete silicon-based optical components for optical communications. Silicon has shown its potential to overcome the bandwidth limitations of microprocessor interconnect, whereas, the silicon platform has already displayed the benefits of low manufacturing costs and CMOS compatibility. The work on “gated lateral silicon p-i-n junction photodiodes” has demonstrated the silicon potential, to detect optical radiations, compatibility to standard CMOS process flow and tuneable spectral response. The lateral structure of gated p-i-n junction photodiodes contributes to high responsivity to short wavelength radiations in these single and dual gate devices. The final objective of this work was to develop high responsivity, CMOS-compatible silicon photodiodes, where the spectral response can be modulated. The lateral p-i-n junction architecture led to high responsivity values, whereas, the MOS gate structure became the basis for tuneable spectral response. The MOS gate structure, made the devices appear as a transistor to the surrounding circuitry and the gate structure in dual gate devices can be used to modulate the spectral response of the device. Single gate devices showed higher responsivity values and comparatively high blue and ultraviolet (UV) response as compared to conventional photodiodes. Surface depletion region in these devices is utilized by placing a MOS gate structure and by patterning an integrated metal grating to detect polarized light. Single and dual gate devices with two variations were fabricated to characterise the device response. Novel lateral architecture of p-i-n junction photodiodes provides a surface depletion region. It is generally anticipated that photodetectors with surface depletion region might produce higher noise. In these devices the surface depletion region has a lateral continuation of gate dielectric which acts as a passivation layer and thus considerably reduced the noise. Physical device modelling studies were performed to verify the experimentally obtained results, which are provided in the relevant measurement chapters. In these devices the speed of operation is a compromise over the high responsivity, CMOS compatibility and tuneable spectral response.EThOS - Electronic Theses Online ServiceGBUnited Kingdo

PA-MBE GaN-Based Optoelectronics on Silicon Substrates

Dalam penyelidikan ini, epitaksi alur molekul berbantukan plasma nitrogen frekuensi radio (RF) digunakan untuk menumbuhkan bahan galium nitrid (GaN) di atas substrat Si(111) dengan penggunaan aluminium nitrid (AlN) yang ditumbuhkan pada suhu tinggi sebagai lapisan penimbal. In this project, radio-frequency (RF) nitrogen plasma-assisted molecular beam epitaxy (PA-MBE) technique was used to grow GaN-based layers on Si(111) substrate using high temperature grown AlN as buffer layer

Flexible Graphene Transistor Architecture for Optical Sensor Technology.

Ph.D. Thesis. University of Hawaiʻi at Mānoa 2017

Flight Avionics Hardware Roadmap

As part of NASA's Avionics Steering Committee's stated goal to advance the avionics discipline ahead of program and project needs, the committee initiated a multi-Center technology roadmapping activity to create a comprehensive avionics roadmap. The roadmap is intended to strategically guide avionics technology development to effectively meet future NASA missions needs. The scope of the roadmap aligns with the twelve avionics elements defined in the ASC charter, but is subdivided into the following five areas: Foundational Technology (including devices and components), Command and Data Handling, Spaceflight Instrumentation, Communication and Tracking, and Human Interfaces

GaN-based modulation doped FETs and UV detectors

Abstract GaN based modulation doped field effect transistors (MODFETs) and ultraviolet detectors are critically reviewed. AlGaN/GaN MODFETs with CW power levels of about 6 W (in devices with 1 mm gate periphery) and a minimum noise figure of 0.85 dB with an associated gain of 11 dB have been obtained at 10 GHz. As a precursor to solar-blind detectors that will be operative around 280 nm, where the solar radiation is absorbed by the ozone layer surrounding the earth, detector arrays with pixel sizes of 32×32 operative near the solar-blind region have been achieved. One does not have to rely on imagination to predict that devices with much improved performance will continue to be developed