1,911 research outputs found

    Fault-tolerance techniques for hybrid CMOS/nanoarchitecture

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    The authors propose two fault-tolerance techniques for hybrid CMOS/nanoarchitecture implementing logic functions as look-up tables. The authors compare the efficiency of the proposed techniques with recently reported methods that use single coding schemes in tolerating high fault rates in nanoscale fabrics. Both proposed techniques are based on error correcting codes to tackle different fault rates. In the first technique, the authors implement a combined two-dimensional coding scheme using Hamming and Bose-Chaudhuri-Hocquenghem (BCH) codes to address fault rates greater than 5. In the second technique, Hamming coding is complemented with bad line exclusion technique to tolerate fault rates higher than the first proposed technique (up to 20). The authors have also estimated the improvement that can be achieved in the circuit reliability in the presence of Don-t Care Conditions. The area, latency and energy costs of the proposed techniques were also estimated in the CMOS domain

    Memory built-in self-repair and correction for improving yield: a review

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    Nanometer memories are highly prone to defects due to dense structure, necessitating memory built-in self-repair as a must-have feature to improve yield. Today’s system-on-chips contain memories occupying an area as high as 90% of the chip area. Shrinking technology uses stricter design rules for memories, making them more prone to manufacturing defects. Further, using 3D-stacked memories makes the system vulnerable to newer defects such as those coming from through-silicon-vias (TSV) and micro bumps. The increased memory size is also resulting in an increase in soft errors during system operation. Multiple memory repair techniques based on redundancy and correction codes have been presented to recover from such defects and prevent system failures. This paper reviews recently published memory repair methodologies, including various built-in self-repair (BISR) architectures, repair analysis algorithms, in-system repair, and soft repair handling using error correcting codes (ECC). It provides a classification of these techniques based on method and usage. Finally, it reviews evaluation methods used to determine the effectiveness of the repair algorithms. The paper aims to present a survey of these methodologies and prepare a platform for developing repair methods for upcoming-generation memories

    Conceptual design and feasibility evaluation model of a 10 to the 8th power bit oligatomic mass memory. Volume 1: Conceptual design

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    The oligatomic (mirror) thin film memory technology is a suitable candidate for general purpose spaceborne applications in the post-1975 time frame. Capacities of around 10 to the 8th power bits can be reliably implemented with systems designed around a 335 million bit module. The recommended mode was determined following an investigation of implementation sizes ranging from an 8,000,000 to 100,000,000 bits per module. Cost, power, weight, volume, reliability, maintainability and speed were investigated. The memory includes random access, NDRO, SEC-DED, nonvolatility, and dual interface characteristics. The applications most suitable for the technology are those involving a large capacity with high speed (no latency), nonvolatility, and random accessing

    A machine learning-based approach to optimize repair and increase yield of embedded flash memories in automotive systems-on-chip

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    Nowadays, Embedded Flash Memory cores occupy a significant portion of Automotive Systems-on-Chip area, therefore strongly contributing to the final yield of the devices. Redundancy strategies play a key role in this context; in case of memory failures, a set of spare word- and bit-lines are allocated by a replacement algorithm that complements the memory testing procedure. In this work, we show that replacement algorithms, which are heavily constrained in terms of execution time, may be slightly inaccurate and lead to classify a repairable memory core as unrepairable. We denote this situation as Flash memory false fail. The proposed approach aims at identifying false fails by using a Machine Learning approach that exploits a feature extraction strategy based on shape recognition. Experimental results carried out on the manufacturing data show a high capability of predicting false fails

    Fault-tolerant computer study

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    A set of building block circuits is described which can be used with commercially available microprocessors and memories to implement fault tolerant distributed computer systems. Each building block circuit is intended for VLSI implementation as a single chip. Several building blocks and associated processor and memory chips form a self checking computer module with self contained input output and interfaces to redundant communications buses. Fault tolerance is achieved by connecting self checking computer modules into a redundant network in which backup buses and computer modules are provided to circumvent failures. The requirements and design methodology which led to the definition of the building block circuits are discussed

    Toward Biologically-Inspired Self-Healing, Resilient Architectures for Digital Instrumentation and Control Systems and Embedded Devices

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    Digital Instrumentation and Control (I&C) systems in safety-related applications of next generation industrial automation systems require high levels of resilience against different fault classes. One of the more essential concepts for achieving this goal is the notion of resilient and survivable digital I&C systems. In recent years, self-healing concepts based on biological physiology have received attention for the design of robust digital systems. However, many of these approaches have not been architected from the outset with safety in mind, nor have they been targeted for the automation community where a significant need exists. This dissertation presents a new self-healing digital I&C architecture called BioSymPLe, inspired from the way nature responds, defends and heals: the stem cells in the immune system of living organisms, the life cycle of the living cell, and the pathway from Deoxyribonucleic acid (DNA) to protein. The BioSymPLe architecture is integrating biological concepts, fault tolerance techniques, and operational schematics for the international standard IEC 61131-3 to facilitate adoption in the automation industry. BioSymPLe is organized into three hierarchical levels: the local function migration layer from the top side, the critical service layer in the middle, and the global function migration layer from the bottom side. The local layer is used to monitor the correct execution of functions at the cellular level and to activate healing mechanisms at the critical service level. The critical layer is allocating a group of functional B cells which represent the building block that executes the intended functionality of critical application based on the expression for DNA genetic codes stored inside each cell. The global layer uses a concept of embryonic stem cells by differentiating these type of cells to repair the faulty T cells and supervising all repair mechanisms. Finally, two industrial applications have been mapped on the proposed architecture, which are capable of tolerating a significant number of faults (transient, permanent, and hardware common cause failures CCFs) that can stem from environmental disturbances and we believe the nexus of its concepts can positively impact the next generation of critical systems in the automation industry

    Design and Implementation of Repair-aware Test Flow for Multi-Memory

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    ABSTRAC

    System-on-Chip design for reliability

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    Strategies for Optimising DRAM Repair

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    Dynamic Random Access Memories (DRAM) are large complex devices, prone to defects during manufacture. Yield is improved by the provision of redundant structures used to repair these defects. This redundancy is often implemented by the provision of excess memory capacity and programmable address logic allowing the replacement of faulty cells within the memory array. As the memory capacity of DRAM devices has increased, so has the complexity of their redundant structures, introducing increasingly complex restrictions and interdependencies upon the use of this redundant capacity. Currently redundancy analysis algorithms solving the problem of optimally allocating this redundant capacity must be manually customised for each new device. Compromises made to reduce the complexity, and human error, reduce the efficacy of these algorithms. This thesis develops a methodology for automating the customisation of these redundancy analysis algorithms. Included are: a modelling language describing the redundant structures (including the restrictions and interdependencies placed upon their use), algorithms manipulating this model to generate redundancy analysis algorithms, and methods for translating those algorithms into executable code. Finally these concepts are used to develop a prototype software tool capable of generating redundancy analysis algorithms customised for a specified device
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