Transport behavior of holes in boron delta-doped diamond structures

Boron delta-doped diamond structures have been synthesized using microwave plasma chemical vapor deposition and fabricated into FET and gated Hall bar devices for assessment of the electrical characteristics. A detailed study of variable temperature Hall, conductivity, and field-effect mobility measurements was completed. This was supported by Schr€dinger-Poisson and relaxation time o calculations based upon application of Fermi’s golden rule. A two carrier-type model was developed with an activation energy of $0.2 eV between the delta layer lowest subband with mobility$1 cm2/Vs and the bulk valence band with high mobility. This new understanding of the transport of holes in such boron delta-doped structures has shown that although Hall mobility as high as 900 cm2/Vs was measured at room temperature, this dramatically overstates the actual useful performance of the device

Electronic Spin Transport in Dual-Gated Bilayer Graphene

The elimination of extrinsic sources of spin relaxation is key in realizing the exceptional intrinsic spin transport performance of graphene. Towards this, we study charge and spin transport in bilayer graphene-based spin valve devices fabricated in a new device architecture which allows us to make a comparative study by separately investigating the roles of substrate and polymer residues on spin relaxation. First, the comparison between spin valves fabricated on SiO2 and BN substrates suggests that substrate-related charged impurities, phonons and roughness do not limit the spin transport in current devices. Next, the observation of a 5-fold enhancement in spin relaxation time in the encapsulated device highlights the significance of polymer residues on spin relaxation. We observe a spin relaxation length of ~ 10 um in the encapsulated bilayer with a charge mobility of 24000 cm2/Vs. The carrier density dependence of spin relaxation time has two distinct regimes; n<4 x 1012 cm-2, where spin relaxation time decreases monotonically as carrier concentration increases, and n>4 x 1012 cm-2, where spin relaxation time exhibits a sudden increase. The sudden increase in the spin relaxation time with no corresponding signature in the charge transport suggests the presence of a magnetic resonance close to the charge neutrality point. We also demonstrate, for the first time, spin transport across bipolar p-n junctions in our dual-gated device architecture that fully integrates a sequence of encapsulated regions in its design. At low temperatures, strong suppression of the spin signal was observed while a transport gap was induced, which is interpreted as a novel manifestation of impedance mismatch within the spin channel

Is it possible for a perovskite p-n homojunction to persist in the presence of mobile ionic charge?

Recently Cui et al. reported on the fabrication a p-n homojunction perovskite solar cell (PSC) using stoichiometric control of sequentially-deposited perovskite layers. The authors propose that the junction leads to an enhanced electric field in the perovskite absorber resulting in improved charge separation. In this response to Cui et al. 2019 we show that the experimental data presented in the paper does not directly support this claim. Furthermore, Cui et al.'s thesis is not compatible with the large body of existing literature showing that mobile ionic defects present in methyl-ammonium lead iodide (MAPI) and its derivatives are highly mobile at room temperature. Using drift diffusion device simulations we show that large densities of mobile ionic charge in the system are likely to the screen any beneficial effects of a p-n homojunction.Comment: 17 pages, 5 figures, Response to a published article by Cui et a

Roaming Real-Time Applications - Mobility Services in IPv6 Networks

Emerging mobility standards within the next generation Internet Protocol, IPv6, promise to continuously operate devices roaming between IP networks. Associated with the paradigm of ubiquitous computing and communication, network technology is on the spot to deliver voice and videoconferencing as a standard internet solution. However, current roaming procedures are too slow, to remain seamless for real-time applications. Multicast mobility still waits for a convincing design. This paper investigates the temporal behaviour of mobile IPv6 with dedicated focus on topological impacts. Extending the hierarchical mobile IPv6 approach we suggest protocol improvements for a continuous handover, which may serve bidirectional multicast communication, as well. Along this line a multicast mobility concept is introduced as a service for clients and sources, as they are of dedicated importance in multipoint conferencing applications. The mechanisms introduced do not rely on assumptions of any specific multicast routing protocol in use.Comment: 15 pages, 5 figure

Strong interfacial exchange field in the graphene/EuS heterostructure

Exploiting 2D materials for spintronic applications can potentially realize next-generation devices featuring low-power consumption and quantum operation capability. The magnetic exchange field (MEF) induced by an adjacent magnetic insulator enables efficient control of local spin generation and spin modulation in 2D devices without compromising the delicate material structures. Using graphene as a prototypical 2D system, we demonstrate that its coupling to the model magnetic insulator (EuS) produces a substantial MEF (> 14 T) with potential to reach hundreds of Tesla, which leads to orders-of-magnitude enhancement in the spin signal originated from Zeeman spin-Hall effect. Furthermore, the new ferromagnetic ground state of Dirac electrons resulting from the strong MEF may give rise to quantized spin-polarized edge transport. The MEF effect shown in our graphene/EuS devices therefore provides a key functionality for future spin logic and memory devices based on emerging 2D materials in classical and quantum information processing