Implementation of Static and Semi-Static Versions of a 24+8x8 Quad-rail NULL Convention Multiply and Accumulate Unit

This paper focuses on implementing a 2s complement 8x8 dual-rail bit-wise pipelined multiplier using the asynchronous null convention logic (NCL) paradigm. The design utilizes a Wallace tree for partial product summation, and is implemented and simulated in VHDL, the transistor level, and the physical level, using a 1.8V 0.18mum TSMC CMOS process. The multiplier is realized using both static and semi-static versions of the NCL gates; and these two implementations are compared in terms of area, power, and speed

A Framework for the Detection of Crosstalk Noise in FPGAs

In recent years, crosstalk noise has emerged a serious problem because more and more devices and wires have been packed on electronic chips. As integrated circuits are migrated to more advanced technologies, it has become clear that crosstalk noise is the important phenomenon that must be taken into account. Despite of being more immune to crosstalk noise than their ASIC (application specific integrated circuit) counterparts, the dense interconnected structures of FPGAs (field programmable gate arrays) invite more vulnerabilities with crosstalk noise. Due to the lack of electrical detail concerning FPGA devices it is quite difficult to test the faults affected by crosstalk noise. This paper proposes a new approach for detecting the effects such as glitches and delays in transition that are due to crosstalk noise in FPGAs. This approach is similar to the BIST (built-in self test) technique in that it incorporates the test pattern generator to generate the test vectors and the analyzer to analyze the crosstalk faults without any overhead for testing

Modelling and Test Generation for Crosstalk Faults in DSM Chips

In the era of deep submicron technology (DSM), many System-on-Chip (SoC) applications require the components to be operating at high clock speeds. With the shrinking feature size and ever increasing clock frequencies, the DSM technology has led to a well-known problem of Signal Integrity (SI) more especially in the connecting layout design. The increasing aspect ratios of metal wires and also the ratio of coupling capacitance over substrate capacitance result in electrical coupling of interconnects which leads to crosstalk problems. In this thesis, first the work carried out to model the crosstalk behaviour between aggressor and victim by considering the distributed RLGC parameters of interconnect and the coupling capacitance and mutual conductance between the two nets is presented. The proposed model also considers the RC linear models of the CMOS drivers and receivers. The behaviour of crosstalk in case of under etching problem has been studied and modelled by distributing and approximating the defect behaviour throughout the nets. Next, the proposed model has also been extended to model the behaviour of crosstalk in case of one victim is influenced by several aggressors by considering all aggressors have similar effect (worst-case) on victim. In all the above cases simulation experiments were also carried out and compared with well-known circuit simulation tool PSPICE. It has been proved that the generated crosstalk model is faster and the results generated are within 10% of error margin compared to latter simulation tool. Because of the accuracy and speed of the proposed model, the model is very useful for both SoC designers and test engineers to analyse the crosstalk behaviour. Each manufactured device needs to be tested thoroughly to ensure the functionality before its delivery. The test pattern generation for crosstalk faults is also necessary to test the corresponding crosstalk faults. In this thesis, the well-known PODEM algorithm for stuck-at faults is extended to generate the test patterns for crosstalk faults between single aggressor and single victim. To apply modified PODEM for crosstalk faults, the transition behaviour has been divided into two logic parts as before transition and after transition. After finding individually required test patterns for before transition and after transition, the generated logic vectors are appended to create transition test patterns for crosstalk faults. The developed algorithm is also applied for a few ISCAS 85 benchmark circuits and the fault coverage is found excellent in most circuits. With the incorporation of proposed algorithm into the ATPG tools, the efficiency of testing will be improved by generating the test patterns for crosstalk faults besides for the conventional stuck-at faults. In generating test patterns for crosstalk faults on single victim due to multiple aggressors, the modified PODEM algorithm is found to be more time consuming. The search capability of Genetic Algorithms in finding the required combination of several input factors for any optimized problem fascinated to apply GA for generating test patterns as generating the test pattern is also similar to finding the required vector out of several input transitions. Initially the GA is applied for generating test patterns for stuck-at faults and compared the results with PODEM algorithm. As the fault coverage is almost similar to the deterministic algorithm PODEM, the GA developed for stuck-at faults is extended to find test patterns for crosstalk faults between single aggressor and single victim. The elitist GA is also applied for a few ISCAS 85 benchmark circuits. Later the algorithm is extended to generate test patterns for worst-case crosstalk faults. It has been proved that elitist GA developed in this thesis is also very useful in generating test patterns for crosstalk faults especially for multiple aggressor and single victim crosstalk faults

Maximizing Crosstalk-Induced Slowdown During Path Delay Test

Capacitive crosstalk between adjacent signal wires in integrated circuits may lead to noise or a speedup or slowdown in signal transitions. These in turn may lead to circuit failure or reduced operating speed. This thesis focuses on generating test patterns to induce crosstalk-induced signal delays, in order to determine whether the circuit can still meet its timing specification. A timing-driven test generator is developed to sensitize multiple aligned aggressors coupled to a delay-sensitive victim path to detect the combination of a delay spot defect and crosstalk-induced slowdown. The framework uses parasitic capacitance information, timing windows and crosstalk-induced delay estimates to screen out unaligned or ineffective aggressors coupled to a victim path, speeding up crosstalk pattern generation. In order to induce maximum crosstalk slowdown along a path, aggressors are prioritized based on their potential delay increase and timing alignment. The test generation engine introduces the concept of alignment-driven path sensitization to generate paths from inputs to coupled aggressor nets that meet timing alignment and direction requirements. By using path delay information obtained from circuit preprocessing, preferred paths can be chosen during aggressor path propagation processes. As the test generator sensitizes aggressors in the presence of victim path necessary assignments, the search space is effectively reduced for aggressor path generation. This helps in reducing the test generation time for aligned aggressors. In addition, two new crosstalk-driven dynamic test compaction algorithms are developed to control the increase in test pattern count. The proposed test generation algorithm is applied to ISCAS85 and ISCAS89 benchmark circuits. SPICE simulation results demonstrate the ability of the alignment-driven test generator to increase crosstalk-induced delays along victim paths

The analysis and modeling of fine pitch laminate interconnect in response to large energy fault transients

In embedded applications, the miniaturization of circuitry and functionality provides many benefits to both the producer and consumer. However, the benefits gained from miniaturization is not without penalty, as the environmental influences may be great enough to introduce system failures in new or different modes and effects;Of particular interest within this research is the effect of fault transients in reduced geometries of printed circuit card interconnect, commonly referred to as fine pitch laminate interconnect. Whereas larger geometries of conductor trace width and spacing may have been immune to circuit failure at a given fault input, the reduction of the trace geometry may introduce failures as the insulating effect of the dielectric is compromised to the point where arcing occurs;To address this concern, a circuit card was designed with fine pitch laminate features in microstrip, embedded microstrip, and stripline constructions. Various trace widths and separations were tested for structural integrity (presence of arcing or fusing) at voltage extremes defined in avionics standard. The specific trace widths in the test were 4 mils, 6 mils, 8 mils, and 12 mils, with the trace separation in each case equal to the trace widths. The results of the tests and methods to artificially improve the integrity of the interconnect are documented, providing a clear region of reliable operation to the designers and the engineering community;Finally, the construction of the interconnect and the results from the test were combined to create an empirical model for circuit analysis. Created for the Saber simulator, but readily adaptable to Spice, this model will describe high-speed operation of a propagating signal before breakdown, and uses data from the experiment to calculate threshold values for the arcing breakdown. The values for the breakdown voltages are correlated to the experimental data using statistical methods of weighted linear regression and hypothesis testing

A novel low-swing voltage driver design and the analysis of its robustness to the effects of process variation and external disturbances

arket forces are continually demanding devices with increased functionality/unit area; these demands have been satisfied through aggressive technology scaling which, unfortunately, has impacted adversely on the global interconnect delay subsequently reducing system performance. Line drivers have been used to mitigate the problems with delay; however, these have a large power consumption. A solution to reducing the power dissipation of the drivers is to use lower supply voltages. However, by adopting a lower power supply voltage, the performance of the line drivers for global interconnects is impaired unless low-swing signalling techniques are implemented. Low-swing signalling techniques can provide high speed signalling with low power consumption and hence can be used to drive global on-chip interconnect. Most of the proposed low-swing signalling schemes are immune to noise as they have a good SNR. However, they tend to have a large penalty in area and complexity as they require additional circuitry such as voltage generators and low-Vth devices. Most of the schemes also incorporate multiple Vdd and reference voltages which increase the overall circuit complexity. A diode-connected driver circuit has the best attributes over other low-swing signalling techniques in terms of low power, low delay, good SNR and low area overhead. By incorporating a diode-connected configuration at the output, it can provide high speed signalling due to its high driving capability. However, this configuration also has its limitations as it has issues with its adaptability to process variations, as well as an issue with leakage currents. To address these limitations, two novel driver schemes have been designed, namely, nLVSD and mLVSD, which, additionally, have improvements in performance and power consumption. Comparisons between the proposed schemes with the existing diode-connected driver circuits (MJ and DDC) showed that the nLVSD and mLVSD drivers have approximately 46% and 50% less delay. The name MJ originates from the driver’s designer called Juan A. Montiel-Nelson, while DDC stands for dynamic diode-connected. In terms of power consumption, the nLVSD and mLVSD drivers also produce 43% and 7% improvement. Additionally, the mLVSD driver scheme is the most robust as its SNR is 14 to 44% higher compared to other diode-connected driver circuits. On the other hand, the nLVSD driver has 6% lower SNR compared to the MJ driver, even though it is 19% more robust than the DDC driver. However, since its SNR is still above 1, its improved performance and reduced power consumption, as well other advantages it has over other diode-connected driver circuits can compensate for this limitation. Regarding the robustness to external disturbances, the proposedmdriver circuits are more robust to crosstalk effects as the nLVSD and mLVSD drivers are approximately 35% and 7% more robust than other diode-connected drivers. Furthermore, the mLVSD driver is 5%, 33% and 47% more tolerant to SEUs compared to the nLVSD, MJ and DDC driver circuits respectively, whilst the MJ and DDC drivers are 26% and 40% less tolerant to SEUs iii compared to the nLVSD circuit. A comparison between the four schemes was also undertaken in the presence of ±3σ process and voltage (PV) variations. The analysis indicated that both proposed driver schemes are more robust than other diode-connected driver schemes, namely, the MJ and DDC driver circuits. The MJ driver scheme deviates approximately 18% and 35% more in delay and power consumption compared to the proposed schemes. The DDC driver has approximately 20% and 57% more variations in delay and power consumption in comparison to the proposed schemes. In order to further improve the robustness of the proposed driver circuits against process variation and environmental disturbances, they were further analysed to identify which process variables had the most impact on circuit delay and power consumption, as well as identifying several design techniques to mitigate problems with environmental disturbances. The most significant process parameters to have impact on circuit delay and power consumption were identified to be Vdd, tox, Vth, s, w and t. The impact of SEUs on the circuit can be reduced by increasing the bias currents whilst design methods such as increasing the interconnect spacing can help improve the circuit robustness against crosstalk. Overall it is considered that the proposed nLVSD and mLVSD circuits advance the state of the art in driver design for on-chip signalling applications.EThOS - Electronic Theses Online ServiceGBUnited Kingdo

Reconfigurable time interval measurement circuit incorporating a programmable gain time difference amplifier

PhD ThesisAs further advances are made in semiconductor manufacturing technology the performance of circuits is continuously increasing. Unfortunately, as the technology node descends deeper into the nanometre region, achieving the potential performance gain is becoming more of a challenge; due not only to the effects of process variation but also to the reduced timing margins between signals within the circuit creating timing problems. Production Standard Automatic Test Equipment (ATE) is incapable of performing internal timing measurements due, first to the lack of accessibility and second to the overall timing accuracy of the tester which is grossly inadequate. To address these issue ‘on-chip’ time measurement circuits have been developed in a similar way that built in self-test (BIST) evolved for ‘on-chip’ logic testing. This thesis describes the design and analysis of three time amplifier circuits. The analysis undertaken considers the operational aspects related to gain and input dynamic range, together with the robustness of the circuits to the effects of process, voltage and temperature (PVT) variations. The design which had the best overall performance was subsequently compared to a benchmark design, which used the ‘buffer delay offset’ technique for time amplification, and showed a marked 6.5 times improvement on the dynamic range extending this from 40 ps to 300ps. The new design was also more robust to the effects of PVT variations. The new time amplifier design was further developed to include an adjustable gain capability which could be varied in steps of approximately 7.5 from 4 to 117. The time amplifier was then connected to a 32-stage tapped delay line to create a reconfigurable time measurement circuit with an adjustable resolution range from 15 down to 0.5 ps and a dynamic range from 480 down to 16 ps depending upon the gain setting. The overall footprint of the measurement circuit, together with its calibration module occupies an area of 0.026 mm2 The final circuit, overall, satisfied the main design criteria for ‘on-chip’ time measurement circuitry, namely, it has a wide dynamic range, high resolution, robust to the effects of PVT and has a small area overhead.Umm Al-Qura University

Reliability Modeling and Analysis of Clockless Wave Pipeline Core for Embedded Combinational Logic Design

This paper presents a model for analyzing the reliability of a clockless wave pipeline as an intellectual property (IP) core for embedded design. This design requires different clocking requirements by each embedded IP core during integration. Therefore, either partial or global lack of synchronization of the embedded clocking is considered for the data flow. The clockless wave pipeline represents an alternative to a traditional pipeline scheme; it requires an innovative computing model that is readily suitable for high-throughput computing by heterogeneous IP logic cores embedded in system-on-chip (SoC). A clockless wave pipeline technique relies on local asynchronous operation for seamless integration of a combinational core into an SoC. The basic computational components of a clockless wave pipeline are the datawaves, together with the request signals and switches. The coordination of the processing of the datawaves throughout the pipeline by the request signals is accomplished with no intermediate access in the clock control. Furthermore, the reliability of clockless-wave-pipeline-based cores is of importance when designing a reliable SOC. In this paper, the reliability in the clockless operations of the wave pipeline is analyzed by considering the datawaves and the request signals. The effect of the so-called out-of-orchestration between the datawaves and the request signals (which is referred to as a datawave fault) is proposed in the reliability analysis. A clockless-induced datawave fault model is proposed for clockless fault-tolerant design

Reliability analysis of planar and symmetrical & asymmetrical trench discrete SiC Power MOSFETs

Silicon Carbide MOSFETs are shown in research to outperform Silicon counterparts on many performance metrics, including switching rates and power losses. To further improve their performance, trench and double-trench structures have recently been developed. To replace conventional planar SiC MOSFETs, besides the performance parameters which are mostly stated in datasheets, reliability studies under stress are also needed. This thesis presents a comprehensive comparison between 3rd generation trench SiC power MOSFETs, namely symmetrical double-trench and asymmetrical trench with planar SiC power MOSFETs on four aspects of: switching slew rates (dI/dt & dV/dt), crosstalk characteristics, bias temperature instability and power cycling stability.First, the dynamic performance in both 1st quadrant and 3rd quadrant has been eval- uated on the differences in stress by dI/dt & dV/dt and resultant losses. This is key in understanding many other reliability criterions, i.e. severity of crosstalk induced switchings. In the 1st quadrant, the source current and drain-source voltage switching rates at both turn-ON and turn-OFF are measured under a range of test conditions. Both the symmetrical and asymmetrical trench MOSFETs have up to 2 times faster voltage and current slew rates compared with the planar one. They also indicate only slight changes in switching rate with junction temperature. In the 3rd quadrant, the reverse recovery peak current and total reverse recovery charge are measured with respect to junction temper- ature and load current level. Both the symmetrical and asymmetrical trench MOSFETs have less than half of the reverse recovery charge of that of the planar SiC MOSFET.In the evaluation of crosstalk characteristics, peak shoot-through current and induced gate voltage at crosstalk are measured with respect to junction temperature and external gate resistance. With particularly large external gate resistances connected to intentionally induce parasitic turn-ON, the symmetrical double-trench MOSFET is shown to be more prone to crosstalk with 23 A peak shoot-through current measured while it is only 10 A for asymmetrical trench and 4 A for planar MOSFET under similar test conditions. As the temperature increase, the peak shoot-through current drops for the symmetrical double-trench, while constant for the asymmetrical trench and rising for the planar device.Threshold voltage drift is also measured to reflect the degradation happened with bias temperature instability at various junction temperatures, stressing voltages and time periods. Under low-magnitude gate stress (within the range of datasheets) in both positive and negative bias cases, there is more threshold drift observed on the two trench MOSFETs at all junction temperatures than the planar MOSFET. When the stress magnitude is raised, there is less threshold drift observed on the two trench MOSFETs.To evaluate the ruggedness in continuous switchings, the devices are placed under repetitive turn-ON events. The thermal performance under such operation are compared. The asymmetrical trench MOSFET experiences the highest case temperature rise while the least is observed for the planar MOSFET. With an external heatsink equipped to achieve more efficient cooling, the repetitive turn-ON test transforms into the conventional power cycling. In this condition, both the symmetrical and asymmetrical trench MOSFETs fail earlier than the degraded (but not failed) planar MOSFET