Fast, non-monte-carlo estimation of transient performance variation due to device mismatch

This paper describes an efficient way of simulating the effects of device random mismatch on circuit transient characteristics, such as variations in delay or in frequency. The proposed method models DC random offsets as equivalent AC pseudo-noises and leverages the fast, linear periodically time-varying (LPTV) noise analysis available from RF circuit simulators. Therefore, the method can be considered as an extension to DC match analysis and offers a large speed-up compared to the traditional Monte-Carlo analysis. Although the assumed linear perturbation model is valid only for small variations, it enables easy ways to estimate correlations among variations and identify the most sensitive design parameters to mismatch, all at no additional simulation cost. Three benchmarks measuring the variations in the input offset voltage of a clocked comparator, the delay of a logic path, and the frequency of an oscillator demonstrate the speed improvement of about 100-1000x compared to a 1000-point Monte-Carlo method

A parallel algorithm for switch-level timing simulation on a hypercube multiprocessor

The parallel approach to speeding up simulation is studied, specifically the simulation of digital LSI MOS circuitry on the Intel iPSC/2 hypercube. The simulation algorithm is based on RSIM, an event driven switch-level simulator that incorporates a linear transistor model for simulating digital MOS circuits. Parallel processing techniques based on the concepts of Virtual Time and rollback are utilized so that portions of the circuit may be simulated on separate processors, in parallel for as large an increase in speed as possible. A partitioning algorithm is also developed in order to subdivide the circuit for parallel processing

Calculation of Generalized Polynomial-Chaos Basis Functions and Gauss Quadrature Rules in Hierarchical Uncertainty Quantification

Stochastic spectral methods are efficient techniques for uncertainty quantification. Recently they have shown excellent performance in the statistical analysis of integrated circuits. In stochastic spectral methods, one needs to determine a set of orthonormal polynomials and a proper numerical quadrature rule. The former are used as the basis functions in a generalized polynomial chaos expansion. The latter is used to compute the integrals involved in stochastic spectral methods. Obtaining such information requires knowing the density function of the random input {\it a-priori}. However, individual system components are often described by surrogate models rather than density functions. In order to apply stochastic spectral methods in hierarchical uncertainty quantification, we first propose to construct physically consistent closed-form density functions by two monotone interpolation schemes. Then, by exploiting the special forms of the obtained density functions, we determine the generalized polynomial-chaos basis functions and the Gauss quadrature rules that are required by a stochastic spectral simulator. The effectiveness of our proposed algorithm is verified by both synthetic and practical circuit examples.Comment: Published by IEEE Trans CAD in May 201

Yield-driven power-delay-optimal CMOS full-adder design complying with automotive product specifications of PVT variations and NBTI degradations

We present the detailed results of the application of mathematical optimization algorithms to transistor sizing in a full-adder cell design, to obtain the maximum expected fabrication yield. The approach takes into account all the fabrication process parameter variations specified in an industrial PDK, in addition to operating condition range and NBTI aging. The final design solutions present transistor sizing, which depart from intuitive transistor sizing criteria and show dramatic yield improvements, which have been verified by Monte Carlo SPICE analysis

Nano-Sim: A Step Wise Equivalent Conductance based Statistical Simulator for Nanotechnology Circuit Design

New nanotechnology based devices are replacing CMOS devices to overcome CMOS technology's scaling limitations. However, many such devices exhibit non-monotonic I-V characteristics and uncertain properties which lead to the negative differential resistance (NDR) problem and the chaotic performance. This paper proposes a new circuit simulation approach that can effectively simulate nanotechnology devices with uncertain input sources and negative differential resistance (NDR) problem. The experimental results show a 20-30 times speedup comparing with existing simulators.Comment: Submitted on behalf of EDAA (http://www.edaa.com/

Design of A Low Power Low Voltage CMOS Opamp

In this paper a CMOS operational amplifier is presented which operates at 2V power supply and 1microA input bias current at 0.8 micron technology using non conventional mode of operation of MOS transistors and whose input is depended on bias current. The unique behaviour of the MOS transistors in subthreshold region not only allows a designer to work at low input bias current but also at low voltage. While operating the device at weak inversion results low power dissipation but dynamic range is degraded. Optimum balance between power dissipation and dynamic range results when the MOS transistors are operated at moderate inversion. Power is again minimised by the application of input dependant bias current using feedback loops in the input transistors of the differential pair with two current substractors. In comparison with the reported low power low voltage opamps at 0.8 micron technology, this opamp has very low standby power consumption with a high driving capability and operates at low voltage. The opamp is fairly small (0.0084 mm 2) and slew rate is more than other low power low voltage opamps reported at 0.8 um technology [1,2]. Vittoz at al [3] reported that slew rate can be improved by adaptive biasing technique and power dissipation can be reduced by operating the device in weak inversion. Though lower power dissipation is achieved the area required by the circuit is very large and speed is too small. So, operating the device in moderate inversion is a good solution. Also operating the device in subthreshold region not only allows lower power dissipation but also a lower voltage operation is achieved.Comment: 8 Pages, VLSICS Journa

Implementation of Large Scale Integrated (LSI) circuit design software

Portions of the Computer Aided Design and Test system, a collection of Large Scale Integrated (LSI) circuit design programs were modified and upgraded. Major modifications were made to the Mask Analysis Program in the form of additional operating commands and file processing options. Modifications were also made to the Artwork Interactive Design System to correct some deficiencies in the original program as well as to add several new command features related to improving the response of AIDS when dealing with large files. The remaining work was concerned with updating various programs within CADAT to incorporate the silicon on sapphire silicon gate technology

A new nonlinear time-domain op-amp macromodel using threshold functions and digitally controlled network elements

A general-purpose nonlinear macromodel for the time-domain simulation of integrated circuit operational amplifiers (op amps), either bipolar or MOS, is presented. Three main differences exist between the macromodel and those previously reported in the literature for the time domain. First, all the op-amp nonlinearities are simulated using threshold elements and digital components, thus making them well suited for a mixed electrical/logical simulator. Secondly, the macromodel exhibits a superior performance in those cases where the op amp is driven by a large signal. Finally, the macromodel is advantageous in terms of CPU time. Several examples are included illustrating all of these advantages. The main application of this macromodel is for the accurate simulation of the analog part of a combined analog/digital integrated circui

Testability enhancement of a basic set of CMOS cells

Testing should be evaluated as the ability of the test patterns to cover realistic faults, and high quality IC products demand high quality testing. We use a test strategy based on physical design for testability (to discover both open and short faults, which are difficult or even impossible to detect). Consequentially, layout level design for testability (LLDFT) rules have been developed, which prevent the faults, or at least reduce the chance of their appearing. The main purpose of this work is to apply a practical set of LLDFT rules to the library cells designed by the Centre Nacional de Microelectrònica (CNM) and obtain a highly testable cell library. The main results of the application of the LLDFT rules (area overheads and performance degradation) are summarized and the results are significant since IC design is highly repetitive; a small effort to improve cell layout can bring about great improvement in design