Programmable CMOS Analog-to-Digital Converter Design and Testability

In this work, a programmable second order oversampling CMOS delta-sigma analog-to-digital converter (ADC) design in 0.5µm n-well CMOS processes is presented for integration in sensor nodes for wireless sensor networks. The digital cascaded integrator comb (CIC) decimation filter is designed to operate at three different oversampling ratios of 16, 32 and 64 to give three different resolutions of 9, 12 and 14 bits, respectively which impact the power consumption of the sensor nodes. Since the major part of power consumed in the CIC decimator is by the integrators, an alternate design is introduced by inserting coder circuits and reusing the same integrators for different resolutions and oversampling ratios to reduce power consumption. The measured peak signal-to-noise ratio (SNR) for the designed second order delta-sigma modulator is 75.6dB at an oversampling ratio of 64, 62.3dB at an oversampling ratio of 32 and 45.3dB at an oversampling ratio of 16. The implementation of a built-in current sensor (BICS) which takes into account the increased background current of defect-free circuits and the effects of process variation on ΔIDDQ testing of CMOS data converters is also presented. The BICS uses frequency as the output for fault detection in CUT. A fault is detected when the output frequency deviates more than ±10% from the reference frequency. The output frequencies of the BICS for various model parameters are simulated to check for the effect of process variation on the frequency deviation. A design for on-chip testability of CMOS ADC by linear ramp histogram technique using synchronous counter as register in code detection unit (CDU) is also presented. A brief overview of the histogram technique, the formulae used to calculate the ADC parameters, the design implemented in 0.5µm n-well CMOS process, the results and effectiveness of the design are described. Registers in this design are replaced by 6T-SRAM cells and a hardware optimized on-chip testability of CMOS ADC by linear ramp histogram technique using 6T-SRAM as register in CDU is presented. The on-chip linear ramp histogram technique can be seamlessly combined with ΔIDDQ technique for improved testability, increased fault coverage and reliable operation

On the deployment of on-chip noise sensors

The relentless technology scaling has led to significantly reduced noise margin and complicated functionalities. As such, design time techniques per se are less likely to ensure power integrity, resulting in runtime voltage emergencies. To alleviate the issue, recently several works have shed light on the possibilities of dynamic noise management systems. Most of these works rely on on-chip noise sensors to accurately capture voltage emergencies. However, they all assume that the placement of the sensors is given. It remains an open problem in the literature how to optimally place a given number of noise sensors for best voltage emergency detection. The problem of noise sensor placement is defined at first along with a novel sensing quality metric (SQM) to be maximized. The threshold voltage for noise sensors to report emergencies serves as a critical tuning knob between the system failure rate and false alarms. The problem of minimizing the system alarm rate subject to a given system failure rate constraint is formulated. It is further shown that with the help of IDDQ measurements during testing which reveal process variation information, it is possible and efficient to compute a per-chip optimal threshold voltage threshold. In the third chapter, a novel framework to predict the resonance frequency using existing on-chip noise sensors, based on the theory of 1-bit compressed sensing is proposed. The proposed framework can help to achieve the resonance frequency of individual chips so as to effectively avoid resonance noise at runtime --Abstract, page iii

Design for testability of a latch-based design

Abstract. The purpose of this thesis was to decrease the area of digital logic in a power management integrated circuit (PMIC), by replacing selected flip-flops with latches. The thesis consists of a theory part, that provides background theory for the thesis, and a practical part, that presents a latch register design and design for testability (DFT) method for achieving an acceptable level of manufacturing fault coverage for it. The total area was decreased by replacing flip-flops of read-write and one-time programmable registers with latches. One set of negative level active primary latches were shared with all the positive level active latch registers in the same register bank. Clock gating was used to select which latch register the write data was loaded to from the primary latches. The latches were made transparent during the shift operation of partial scan testing. The observability of the latch register clock gating logic was improved by leaving the first bit of each latch register as a flip-flop. The controllability was improved by inserting control points. The latch register design, developed in this thesis, resulted in a total area decrease of 5% and a register bank area decrease of 15% compared to a flip-flop-based reference design. The latch register design manages to maintain the same stuck-at fault coverage as the reference design.Salpaperäisen piirin testattavuuden suunnittelu. Tiivistelmä. Tämän opinnäytetyön tarkoituksena oli pienentää digitaalisen logiikan pinta-alaa integroidussa tehonhallintapiirissä, korvaamalla valitut kiikut salpapiireillä. Opinnäytetyö koostuu teoriaosasta, joka antaa taustatietoa opinnäytetyölle, ja käytännön osuudesta, jossa esitellään salparekisteripiiri ja testattavuussuunnittelun menetelmä, jolla saavutettiin riittävän hyvä virhekattavuus salparekisteripiirille. Kokonaispinta-alaa pienennettiin korvaamalla luku-kirjoitusrekistereiden ja kerran ohjelmoitavien rekistereiden kiikut salpapiireillä. Yhdet negatiivisella tasolla aktiiviset isäntä-salpapiirit jaettiin kaikkien samassa rekisteripankissa olevien positiivisella tasolla aktiivisten salparekistereiden kanssa. Kellon portittamisella valittiin mihin salparekisteriin kirjoitusdata ladattiin yhteisistä isäntä-salpapireistä. Osittaisessa testipolkuihin perustuvassa testauksessa salpapiirit tehtiin läpinäkyviksi siirtooperaation aikana. Salparekisterin kellon portituslogiikan havaittavuutta parannettiin jättämällä jokaisen salparekisterin ensimmäinen bitti kiikuksi. Ohjattavuutta parannettiin lisäämällä ohjauspisteitä. Salparekisteripiiri, joka suunniteltiin tässä diplomityössä, pienensi kokonaispinta-alaa 5 % ja rekisteripankin pinta-alaa 15 % verrattuna kiikkuperäiseen vertailupiiriin. Salparekisteripiiri onnistuu pitämään saman juuttumisvikamallin virhekattavuuden kuin vertailupiiri

Low-power, 10-Gbps 1.5-Vpp differential CMOS driver for a silicon electro-optic ring modulator

We present a novel driver circuit enabling electro-optic modulation with high extinction ratio from a co-designed silicon ring modulator. The driver circuit provides an asymmetric differential output at 10Gbps with a voltage swing up to 1.5V(pp) from a single 1.0V supply, maximizing the resonance-wavelength shift of depletion-type ring modulators while avoiding carrier injection. A test chip containing 4 reconfigurable driver circuits was fabricated in 40nm CMOS technology. The measured energy consumption for driving a 100fF capacitive load at 10Gbps was as low as 125fJ/bit and 220fJ/bit at 1V(pp) and 1.5V(pp) respectively. After flip-chip integration with ring modulators on a silicon-photonics chip, the power consumption was measured to be 210fJ/bit and 350fJ/bit respectively

Iddq testing of a CMOS 10-bit charge scaling digital-to-analog converter

This work presents an effective built-in current sensor (BICS), which has a very small impact on the performance of the circuit under test (CUT). The proposed BICS works in two-modes the normal mode and the test mode. In the normal mode the BICS is isolated from the CUT due to which there is no performance degradation of the CUT. In the testing mode, our BICS detects the abnormal current caused by permanent manufacturing defects. Further more our BICS can also distinguish the type of defect induced (Gate-source short, source-drain short and drain-gate short). Our BICS requires neither an external voltage source nor current source. Hence the BICS requires less area and is more efficient than the conventional current sensors. The circuit under test is a 10-bit digital to analog converter using charge-scaling architecture

Memory Module Design for High-Temperature Applications in SiC CMOS Technology

The wide bandgap (WBG) characteristics of SiC play a significant and disruptive role in the power electronics industry. The same characteristics make this material a viable choice for high-temperature electronics systems. Leveraging the high-temperature capability of SiC is crucial to automotive, space exploration, aerospace, deep well drilling, and gas turbines. A significant issue with the high-temperature operation is the exponential increase in leakage current. The lower intrinsic carrier concentration of SiC (10-9 cm-3) compared to Si (1010 cm-3) leads to lower leakage over temperature. Several researchers have demonstrated analog and digital circuits designed in SiC. However, a memory module is required to realize a complete electronic system in SiC that bridges the gap between data processing and data storage. Designing memory that can process massive amounts of data in harsh environments while consuming low power opens doors for future electronics. A novel static random-access memory (SRAM) cell is designed and implemented in a SiC 1 µm triple well CMOS process for high-temperature applications in this work. The prevalent issues encountered during SiC fabrication and the uncertainties in device performance led to 6T SRAM cell design modifications that enable adaptability to the worst and the best cases. However, design trade-offs are made in the design size, the number of transistors, number of I/Os, and the cell\u27s power consumption. The novel SRAM cell design mitigates the effect of poor p-type contacts after the device fabrication by controlling the cell\u27s drive strength via an additional pull-up network. The design also includes two parallel access transistors and separate wordlines that control both access transistors. This individual control enables post-fabrication tunability in the cell ratio (CR) and the pull-up (PR) ratio of the cell. It also allows tuning the access transistors\u27 effective width during a data read operation, and a data write operation, independently. Along with the SRAM cell design, the conventional latch-based sense amplifier is also designed in the SiC CMOS process to realize the monolithic memory IC modules. The SRAM cell performance is evaluated on the basis of static noise margin (SNM), write SNM (WSNM), read SNM (RSNM), leakage current, and read access time over a wide temperature range (25ºC to 500ºC) on three uniquely processed wafers. The noise margins measured on Wafer #2 show a lower leakage current of ~500 nA at 500ºC with the supply voltage of 10 V. The SNM of 6.07 V is measured at 500ºC with a 10 V of power supply. The read access time at 400ºC is ~7.5 µs at a supply voltage of 10 V

The Fifth NASA Symposium on VLSI Design

The fifth annual NASA Symposium on VLSI Design had 13 sessions including Radiation Effects, Architectures, Mixed Signal, Design Techniques, Fault Testing, Synthesis, Signal Processing, and other Featured Presentations. The symposium provides insights into developments in VLSI and digital systems which can be used to increase data systems performance. The presentations share insights into next generation advances that will serve as a basis for future VLSI design

Constraint-driven RF test stimulus generation and built-in test

With the explosive growth in wireless applications, the last decade witnessed an ever-increasing test challenge for radio frequency (RF) circuits. While the design community has pushed the envelope far into the future, by expanding CMOS process to be used with high-frequency wireless devices, test methodology has not advanced at the same pace. Consequently, testing such devices has become a major bottleneck in high-volume production, further driven by the growing need for tighter quality control. RF devices undergo testing during the prototype phase and during high-volume manufacturing (HVM). The benchtop test equipment used throughout prototyping is very precise yet specialized for a subset of functionalities. HVM calls for a different kind of test paradigm that emphasizes throughput and sufficiency, during which the projected performance parameters are measured one by one for each device by automated test equipment (ATE) and compared against defined limits called specifications. The set of tests required for each product differs greatly in terms of the equipment required and the time taken to test individual devices. Together with signal integrity, precision, and repeatability concerns, the initial cost of RF ATE is prohibitively high. As more functionality and protocols are integrated into a single RF device, the required number of specifications to be tested also increases, adding to the overall cost of testing, both in terms of the initial and recurring operating costs. In addition to the cost problem, RF testing proposes another challenge when these components are integrated into package-level system solutions. In systems-on-packages (SOP), the test problems resulting from signal integrity, input/output bandwidth (IO), and limited controllability and observability have initiated a paradigm shift in high-speed analog testing, favoring alternative approaches such as built-in tests (BIT) where the test functionality is brought into the package. This scheme can make use of a low-cost external tester connected through a low-bandwidth link in order to perform demanding response evaluations, as well as make use of the analog-to-digital converters and the digital signal processors available in the package to facilitate testing. Although research on analog built-in test has demonstrated hardware solutions for single specifications, the paradigm shift calls for a rather general approach in which a single methodology can be applied across different devices, and multiple specifications can be verified through a single test hardware unit, minimizing the area overhead. Specification-based alternate test methodology provides a suitable and flexible platform for handling the challenges addressed above. In this thesis, a framework that integrates ATE and system constraints into test stimulus generation and test response extraction is presented for the efficient production testing of high-performance RF devices using specification-based alternate tests. The main components of the presented framework are as follows: Constraint-driven RF alternate test stimulus generation: An automated test stimulus generation algorithm for RF devices that are evaluated by a specification-based alternate test solution is developed. The high-level models of the test signal path define constraints in the search space of the optimized test stimulus. These models are generated in enough detail such that they inherently define limitations of the low-cost ATE and the I/O restrictions of the device under test (DUT), yet they are simple enough that the non-linear optimization problem can be solved empirically in a reasonable amount of time. Feature extractors for BIT: A methodology for the built-in testing of RF devices integrated into SOPs is developed using additional hardware components. These hardware components correlate the high-bandwidth test response to low bandwidth signatures while extracting the test-critical features of the DUT. Supervised learning is used to map these extracted features, which otherwise are too complicated to decipher by plain mathematical analysis, into the specifications under test. Defect-based alternate testing of RF circuits: A methodology for the efficient testing of RF devices with low-cost defect-based alternate tests is developed. The signature of the DUT is probabilistically compared with a class of defect-free device signatures to explore possible corners under acceptable levels of process parameter variations. Such a defect filter applies discrimination rules generated by a supervised classifier and eliminates the need for a library of possible catastrophic defects.Ph.D.Committee Chair: Chatterjee, Abhijit; Committee Member: Durgin, Greg; Committee Member: Keezer, David; Committee Member: Milor, Linda; Committee Member: Sitaraman, Sures

Low Cost NBTI Degradation Detection and Masking Approaches

Performance degradation of integrated circuits due to aging effects, such as Negative Bias Temperature Instability (NBTI), is becoming a great concern for current and future CMOS technology. In this paper, we propose two monitoring and masking approaches that detect late transitions due to NBTI degradation in the combinational part of critical data paths and guarantee the correctness of the provided output data by adapting the clock frequency. Compared to recently proposed alternative solutions, one of our approaches (denoted as Low Area and Power (LAP) approach) requires lower area overhead and lower, or comparable, power consumption, while exhibiting the same impact on system performance, while the other proposed approach (denoted as High Performance (HP) approach) allows us to reduce the impact on system performance, at the cost of some increase in area and power consumption