Broadband Receiver Electronic Circuits for Fiber-Optical Communication Systems

The exponential growth of internet traffic drives datacenters to constantly improve their capacity. As the copper based network infrastructure is being replaced by fiber-optical interconnects, new industrial standards for higher datarates are required. Several research and industrial organizations are aiming towards 400 Gb Ethernet and beyond, which brings new challenges to the field of high-speed broadband electronic circuit design. Replacing OOK with higher M-ary modulation formats and using higher datarates increases network capacity but at the cost of power. With datacenters rapidly becoming significant energy consumers on the global scale, the energy efficiency of the optical interconnect transceivers takes a primary role in the development of novel systems. There are several additional challenges unique in the design of a broadband shortreach fiber-optical receiver system. The sensitivity of the receiver depends on the noise performance of the PD and the electronics. The overall system noise must be optimized for the specific application, modulation scheme, PD and VCSEL characteristics. The topology of the transimpedance amplifier affects the noise and frequency response of the PD, so the system must be optimized as a whole. Most state-of-the-art receivers are built on high-end semiconductor SiGe and InP technologies. However, there are still several design decisions to be made in order to get low noise, high energy efficiency and adequate bandwidth. In order to overcome the frequency limitations of the optoelectronic components, bandwidth enhancement and channel equalization techniques are used. In this work several different blocks of a receiver system are designed and characterized. A broadband, 50 GHz bandwidth CB-based TIA and a tunable gain equalizer are designed in a 130 nm SiGe BiCMOS process. An ultra-broadband traveling wave amplifier is presented, based on a 250 nm InP DHBT technology demonstrating a 207 GHz bandwidth. Two TIA front-end topologies with 133 GHz bandwidth, a CB and a CE with shunt-shunt feedback, based on a 130 nm InP DHBT technology are designed and compared

Wideband integrated circuits for optical communication systems

The exponential growth of internet traffic drives datacenters to constantly improvetheir capacity. Several research and industrial organizations are aiming towardsTbps Ethernet and beyond, which brings new challenges to the field of high-speedbroadband electronic circuit design. With datacenters rapidly becoming significantenergy consumers on the global scale, the energy efficiency of the optical interconnecttransceivers takes a primary role in the development of novel systems. Furthermore,wideband optical links are finding application inside very high throughput satellite(V/HTS) payloads used in the ever-expanding cloud of telecommunication satellites,enabled by the maturity of the existing fiber based optical links and the hightechnology readiness level of radiation hardened integrated circuit processes. Thereare several additional challenges unique in the design of a wideband optical system.The overall system noise must be optimized for the specific application, modulationscheme, PD and laser characteristics. Most state-of-the-art wideband circuits are builton high-end semiconductor SiGe and InP technologies. However, each technologydemands specific design decisions to be made in order to get low noise, high energyefficiency and adequate bandwidth. In order to overcome the frequency limitationsof the optoelectronic components, bandwidth enhancement and channel equalizationtechniques are used. In this work various blocks of optical communication systems aredesigned attempting to tackle some of the aforementioned challenges. Two TIA front-end topologies with 133 GHz bandwidth, a CB and a CE with shunt-shunt feedback,are designed and measured, utilizing a state-of-the-art 130 nm InP DHBT technology.A modular equalizer block built in 130 nm SiGe HBT technology is presented. Threeultra-wideband traveling wave amplifiers, a 4-cell, a single cell and a matrix single-stage, are designed in a 250 nm InP DHBT process to test the limits of distributedamplification. A differential VCSEL driver circuit is designed and integrated in a4x 28 Gbps transceiver system for intra-satellite optical communications based in arad-hard 130nm SiGe process

A review of technologies and design techniques of millimeter-wave power amplifiers

his article reviews the state-of-the-art millimeter-wave (mm-wave) power amplifiers (PAs), focusing on broadband design techniques. An overview of the main solid-state technologies is provided, including Si, gallium arsenide (GaAs), GaN, and other III-V materials, and both field-effect and bipolar transistors. The most popular broadband design techniques are introduced, before critically comparing through the most relevant design examples found in the scientific literature. Given the wide breadth of applications that are foreseen to exploit the mm-wave spectrum, this contribution will represent a valuable guide for designers who need a single reference before adventuring in the challenging task of the mm-wave PA design

Millimeter-Wave and Terahertz Transceivers in SiGe BiCMOS Technologies

This invited paper reviews the progress of silicon–germanium (SiGe) bipolar-complementary metal–oxide–semiconductor (BiCMOS) technology-based integrated circuits (ICs) during the last two decades. Focus is set on various transceiver (TRX) realizations in the millimeter-wave range from 60 GHz and at terahertz (THz) frequencies above 300 GHz. This article discusses the development of SiGe technologies and ICs with the latter focusing on the commercially most important applications of radar and beyond 5G wireless communications. A variety of examples ranging from 77-GHz automotive radar to THz sensing as well as the beginnings of 60-GHz wireless communication up to THz chipsets for 100-Gb/s data transmission are recapitulated. This article closes with an outlook on emerging fields of research for future advancement of SiGe TRX performance

Cryogenic performance of a 3-14 GHz bipolar SiGe low-noise amplifier

The performance of silicon-germanium (SiGe) transistors under cryogenic operation is analysed. The design and characterization of a 3–14 GHz low-noise amplifier (LNA) using SiGe transistors at 300 K and at 13 K are presented. A three stage amplifier is implemented with bipolar transistors model BFU910F from NXP commercially available with a plastic package. The amplifier exhibits 36.8 dB average gain with average noise temperature of 103 K and 42 mW DC power consumption at 300 K ambient temperature. Whereas cooled down to 13 K ambient temperature, it provides 32.4 dB average gain, 11.4 K average noise temperature with a minimum of 7.2 K at 3.5 GHz and a DC power dissipation of 5.8 mW. The presented LNA demonstrates an outstanding performance at cryogenic temperature for a commercial plastic packaged transistor.The authors would like to thank the Spanish Ministry of Economy, Industry and Competitiveness for the financial support provided under the grant ESP2015-70646-C2-2-R

Analysis and Design of a Sub-THz Ultra-Wideband Phased-Array Transmitter

This thesis investigates circuits and systems for broadband high datarate transmitter systems in the millimeter-wave (mm-wave) spectrum. During the course of this dissertation, the design process and characterization of a power efficient and wideband binary phase-shift keying (BPSK) transmitter integrated circuit (IC) with local oscillator (LO) frequency multiplication and 360° phase control for beam steering is studied. All required circuit blocks are designed based on the theoretical analysis of the underlying principles, optimized, fabricated and characterized in the research laboratory targeting low power consumption, high efficiency and broadband operation. The phase-controlled push-push (PCPP) architecture enabling frequency multiplication by four in a single stage is analytically studied and characterized finding an optimum between output power and second harmonic suppression depending on the input amplitude. A PCPP based LO chain is designed. A circuit is fabricated establishing the feasibility of this architecture for operation at more than 200 GHz. Building on this, a second circuit is designed, which produces among the highest saturated output powers at 2 dBm. At less than 100 mW of direct current (DC) power consumption, this results in a power-added efficiency (PAE) of 1.6 % improving the state of the art by almost 30 %. Phase-delayed and time-delayed approaches to beam steering are analyzed, identifying and discussing design challenges like area consumption, signal attenuation and beam squint. A 60 GHz active vector-sum phase-shifter with high gain of 11.3 dB and output power of 5 dBm, improving the PAE of the state of the art by a factor of 30 achieving 6.29 %, is designed. The high gain is possible due to an optimization of the orthogonal signal creation stage enabled by studying and comparing different architectures leading to a trade off of lower signal attenuation for higher area consumption in the chosen electromagnetic coupler. By combining this with a frequency quadrupler, a phase steering enabled LO chain for operation at 220 GHz is created and characterized, confirming the preceding analysis of the phase-frequency relation during multiplication. It achieves a power gain of 21 dB, outperforming comparable designs by 25 dB. This allows the combination of phase control, frequency multiplication and pre-amplification. The radio frequency (RF) efficiency is increased 40-fold to 0.99 %, with a total power consumption of 105 mW. Motivated by the distorting effect of beam squint in phase-delayed broadband array systems, a novel analog hybrid beam steering architecture is devised, combining phase-delayed and time-delayed steering with the goal of reducing the beam squint of phase-delayed systems and large area consumption of time-delayed circuits. An analytical design procedure is presented leading to the research finding of a beam squint reduction potential of more than 83 % in an ideal system. Here, the increase in area consumption is outweighed by the reduction in beam squint. An IC with a low power consumption of 4.3 mW has been fabricated and characterized featuring the first time delay circuit operating at above 200 GHz. By producing most of the beam direction by means of time delay the beam squinting can be reduced by more than 75 % in measurements while the subsequent phase shifter ensures continuous beam direction control. Together, the required silicon area can be reduced to 43 % compared to timedelayed systems in the same frequency range. Based on studies of the optimum signal feeding and input matching of a Gilbert cell, an ultra-wideband, low-power mixer was designed. A bandwidth of more than 100 GHz was achieved exceeding the state of the art by 23 %. With a conversion gain of –13 dB, this enables datarates of more than 100 Gbps in BPSK operation. The findings are consolidated in an integrated transmitter operating around 246 GHz doubling the highest published measured datarates of transmitters with LO chain and power amplifier in BPSK operation to 56 Gbps. The resulting transmitter efficiency of 7.4 pJ/bit improves the state of the art by 70 % and 50 % over BPSK and quadrature phaseshift keying (QPSK) systems, respectively. Together, the results of this work form the basis for low-power and efficient next-generation wireless applications operating at many times the datarates available today.:Abstract 3 Zusammenfassung 5 List of Symbols 11 List of Acronyms 17 Prior Publications 19 1. Introduction 21 1.1. Motivation........................... 21 1.2. Objective of this Thesis ................... 25 1.3. Structure of this Thesis ................... 27 2. Overview of Employed Technologies and Techniques 29 2.1. IntegratedCircuitTechnology................ 29 2.2. Transmission Lines and Passive Structures . . . . . . . . 35 2.3. DigitalModulation ...................... 41 3. Frequency Quadrupler 45 3.1. Theoretical Analysis of Frequency Multiplication Circuits 45 3.2. Phase-Controlled Push-Push Principle for Frequency Quadrupling.......................... 49 3.3. Stand-alone Phase-Controlled Push-Push Quadrupler . 60 3.4. Phase-Controlled Push-Push Quadrupler based LO-chain with High Output Power ............... 72 9 4. Array Systems and Dynamic Beam Steering 91 4.1. Theoretical Analysis of BeamSteering. . . . . . . . . . . 95 4.2. Local Oscillator Phase Shifting with Vector-Modulator PhaseShifters......................... 107 4.3. Hybrid True-Time and Phase-Delayed Beam Steering . 131 5. Ultra-Wide Band Modulator for BPSK Operation 155 6. Broadband BPSK Transmitter System for Datarates up to 56 Gbps 167 6.1. System Architecture ..................... 168 6.2. Measurement Technique and Results . . . . . . . . . . . 171 6.3. Summary and performance comparison . . . . . . . . . 185 7. Conclusion and Outlook 189 A. Appendix 195 Bibliography 199 List of Figures 227 Note of Thanks 239 Curriculum Vitae 241Diese Dissertation untersucht Schaltungen und Systeme für breitbandige Transmittersysteme mit hoher Datenrate im Millimeterwellen (mm-wave) Spektrum. Im Rahmen dieser Arbeit werden der Entwurfsprozess und die Charakterisierung eines leistungseffizienten und breitbandigen integrierten Senders basierend auf binärer Phasenumtastung (BPSK) mit Frequenzvervielfachung des Lokaloszillatorsignals und 360°-Phasenkontrolle zur Strahlsteuerung untersucht. Alle erforderlichen Schaltungsblöcke werden auf Grundlage von theoretischen Analysen der zugrundeliegenden Prinzipien entworfen, optimiert, hergestellt und im Forschungslabor charakterisiert, mit den Zielen einer niedrigen Leistungsaufnahme, eines hohen Wirkungsgrades und einer möglichst großen Bandbreite. Die phasengesteuerte Push-Push (PCPP)-Architektur, welche eine Frequenzvervierfachung in einer einzigen Stufe ermöglicht, wird analytisch untersucht und charakterisiert. Dabei wird ein Optimum zwischen Ausgangsleistung und Unterdrückung der zweiten Harmonischen des Eingangssignals in Abhängigkeit von der Eingangsamplitude gefunden. Es wird eine LO-Kette auf PCPP-Basis entworfen. Eine Schaltung wird präsentiert, die die Machbarkeit dieser Architektur für den Betrieb bei mehr als 200 GHz nachweist. Darauf aufbauend wird eine zweite Schaltung entworfen, die mit 2 dBm eine der höchsten publizierten gesättigten Ausgangsleistungen erzeugt. Mit einer Leistungsaufnahme von weniger als 100mW ergibt sich ein Leistungswirkungsgrad (PAE) von 1.6 %, was den Stand der Technik um fast 30 % verbessert. Es werden phasenverzögerte und zeitverzögerte Ansätze zur Steuerung der Strahlrichtung analysiert, wobei Entwicklungsherausforderungen wie Flächenverbrauch, Signaldämpfung und Strahlschielen identifiziert und diskutiert werden. Ein aktiver Vektorsummen-Phasenschieber mit hoher Verstärkung von 11.3 dB und einer Ausgangsleistung von 5 dBm, der mit einer PAE von 6.29 % den Stand der Technik um den Faktor 30 verbessert, wird entworfen. Die hohe Verstärkung ist zum Teil auf eine Optimierung der orthogonalen Signalerzeugungsstufe zurückzuführen, die durch die Untersuchung und den Vergleich verschiedener Architekturen ermöglicht wird. Bei der Entscheidung für einen elektromagnetischen Koppler rechtfertigt die geringere Signaldämpfung einen höheren Flächenverbrauch. Durch die Kombination mit einem Frequenzvervierfacher wird eine LO-Kette mit Phasensteuerung für den Betrieb bei 220 GHz geschaffen und charakterisiert, was die vorangegangene Analyse der Phasen-FrequenzBeziehung während der Multiplikation bestätigt. Sie erreicht einen Leistungsgewinn von 21 dB und übertrifft damit vergleichbare Designs um 25dB. Dies ermöglicht die Kombination von Phasensteuerung, Frequenzvervielfachung und Vorverstärkung. Der HochfrequenzWirkungsgrad wird um das 40-fache auf 0.99 % bei einer Gesamtleistungsaufnahme von 105 mW gesteigert. Motiviert durch den verzerrenden Effekt des Strahlenschielens in phasengesteuerten Breitbandarraysystemen, wird eine neuartige analoge hybride Strahlsteuerungsarchitektur untersucht, die phasenverzögerte und zeitverzögerte Steuerung kombiniert. Damit wird sowohl das Strahlenschielen phasenverzögerter Systeme als auch der große Flächenverbrauch zeitverzögerter Schaltungen reduziert. Es wird ein analytisches Entwurfsverfahren vorgestellt, das zu dem Forschungsergebnis führt, dass in einem idealen System ein Potenzial zur Reduktion des Strahlenschielens von mehr als 83 % besteht. Dabei wird die Zunahme des Flächenverbrauchs durch die Verringerung des Strahlenschielens aufgewogen. Es wird ein IC mit einer geringen Leistungsaufnahme von 4.3mW hergestellt und charakterisiert. Dabei wird die erste Zeitverzögerungsschaltung entworfen, die bei über 200 GHz arbeitet. Durch die Erzeugung eines Großteils der Strahlrichtung mittels Zeitverzögerung kann das Schielen des Strahls bei Messungen um mehr als 75% reduziert werden, während der nachfolgende Phasenschieber eine kontinuierliche Steuerung der Strahlrichtung gewährleistet. Insgesamt kann die benötigte Siliziumfläche im Vergleich zu zeitverzögerten Systemen im gleichen Frequenzbereich auf 43 % reduziert werden. Auf der Grundlage von Studien zur optimalen Signaleinspeisung und Eingangsanpassung einer Gilbert-Zelle wird ein Ultrabreitband-Mischer mit geringem Stromverbrauch entworfen. Dieser erreicht eine Ausgangsbandbreite von mehr als 100 GHz, die den Stand der Technik um 23% übertrifft. Bei einer Wandlungsverstärkung von –13dB ermöglicht dies Datenraten von mehr als 100 Gbps im BPSK-Betrieb. Die Erkenntnisse werden in einem integrierten, breitbandigen Sender konsolidiert, der um 246 GHz arbeitet und die höchsten veröffentlichten gemessenen Datenraten für Sender mit LO-Signalkette und Leistungsverstärker im BPSK-Betrieb auf 56 Gbps verdoppelt. Die daraus resultierende Transmitter-Effizienz von 7.4 pJ/bit verbessert den Stand der Technik um 70 % bzw. 50 % gegenüber BPSKund Quadratur Phasenumtastung (QPSK)-Systemen. Zusammen bilden die Ergebnisse dieser Arbeit die Grundlage für stromsparende, effiziente, mobile Funkanwendungen der nächsten Generation mit einem Vielfachen der heute verfügbaren Datenraten.:Abstract 3 Zusammenfassung 5 List of Symbols 11 List of Acronyms 17 Prior Publications 19 1. Introduction 21 1.1. Motivation........................... 21 1.2. Objective of this Thesis ................... 25 1.3. Structure of this Thesis ................... 27 2. Overview of Employed Technologies and Techniques 29 2.1. IntegratedCircuitTechnology................ 29 2.2. Transmission Lines and Passive Structures . . . . . . . . 35 2.3. DigitalModulation ...................... 41 3. Frequency Quadrupler 45 3.1. Theoretical Analysis of Frequency Multiplication Circuits 45 3.2. Phase-Controlled Push-Push Principle for Frequency Quadrupling.......................... 49 3.3. Stand-alone Phase-Controlled Push-Push Quadrupler . 60 3.4. Phase-Controlled Push-Push Quadrupler based LO-chain with High Output Power ............... 72 9 4. Array Systems and Dynamic Beam Steering 91 4.1. Theoretical Analysis of BeamSteering. . . . . . . . . . . 95 4.2. Local Oscillator Phase Shifting with Vector-Modulator PhaseShifters......................... 107 4.3. Hybrid True-Time and Phase-Delayed Beam Steering . 131 5. Ultra-Wide Band Modulator for BPSK Operation 155 6. Broadband BPSK Transmitter System for Datarates up to 56 Gbps 167 6.1. System Architecture ..................... 168 6.2. Measurement Technique and Results . . . . . . . . . . . 171 6.3. Summary and performance comparison . . . . . . . . . 185 7. Conclusion and Outlook 189 A. Appendix 195 Bibliography 199 List of Figures 227 Note of Thanks 239 Curriculum Vitae 24

Distributed Circuit Analysis and Design for Ultra-wideband Communication and sub-mm Wave Applications

This thesis explores research into new distributed circuit design techniques and topologies, developed to extend the bandwidth of amplifiers operating in the mm and sub-mm wave regimes, and in optical and visible light communication systems. Theoretical, mathematical modelling and simulation-based studies are presented, with detailed designs of new circuits based on distributed amplifier (DA) principles, and constructed using a double heterojunction bipolar transistor (DHBT) indium phosphide (InP) process with fT =fmax of 350/600 GHz. A single stage DA (SSDA) with bandwidth of 345 GHz and 8 dB gain, based on novel techniques developed in this work, shows 140% bandwidth improvement over the conventional DA design. Furthermore, the matrix-single stage DA (M-SSDA) is proposed for higher gain than both the conventional DA and matrix amplifier. A two-tier M-SSDA with 14 dB gain at 300 GHz bandwidth, and a three-tier M-SSDA with a gain of 20 dB at 324 GHz bandwidth, based on a cascode gain cell and optimized for bandwidth and gain flatness, are presented based on full foundry simulation tests. Analytical and simulation-based studies of the noise performance peculiarities of the SSDA and its multiplicative derivatives are also presented. The newly proposed circuits are fabricated as monolithic microwave integrated circuits (MMICs), with measurements showing 7.1 dB gain and 200 GHz bandwidth for the SSDA and 12 dB gain at 170 GHz bandwidth for the three-tier M-SSDA. Details of layout, fabrication and testing; and discussion of performance limiting factors and layout optimization considerations are presented. Drawing on the concept of artificial transmission line synthesis in distributed amplification, a new technique to achieve up to three-fold improvement in the modulation bandwidth of light emitting diodes (LEDs) for visible light communication (VLC) is introduced. The thesis also describes the design and application of analogue pre-emphasis to improve signal-to-noise ratio in bandwidth limited optical transceivers