Smart cmos image sensor for 3d measurement

3D measurements are concerned with extracting visual information from the geometry of visible surfaces and interpreting the 3D coordinate data thus obtained, to detect or track the position or reconstruct the profile of an object, often in real time. These systems necessitate image sensors with high accuracy of position estimation and high frame rate of data processing for handling large volumes of data. A standard imager cannot address the requirements of fast image acquisition and processing, which are the two figures of merit for 3D measurements. Hence, dedicated VLSI imager architectures are indispensable for designing these high performance sensors. CMOS imaging technology provides potential to integrate image processing algorithms on the focal plane of the device, resulting in smart image sensors, capable of achieving better processing features in handling massive image data. The objective of this thesis is to present a new architecture of smart CMOS image sensor for real time 3D measurement using the sheet-beam projection methods based on active triangulation. Proposing the vision sensor as an ensemble of linear sensor arrays, all working in parallel and processing the entire image in slices, the complexity of the image-processing task shifts from O (N 2 ) to O (N). Inherent also in the design is the high level of parallelism to achieve massive parallel processing at high frame rate, required in 3D computation problems. This work demonstrates a prototype of the smart linear sensor incorporating full testability features to test and debug both at device and system levels. The salient features of this work are the asynchronous position to pulse stream conversion, multiple images binarization, high parallelism and modular architecture resulting in frame rate and sub-pixel resolution suitable for real time 3D measurements

Diseño CMOS de un sistema de visión “on-chip” para aplicaciones de muy alta velocidad

Falta palabras claveEsta Tesis presenta arquitecturas, circuitos y chips para el diseño de sensores de visión CMOS con procesamiento paralelo embebido. La Tesis reporta dos chips, en concreto: El chip Q-Eye; El chip Eye-RIS_VSoC.. Y dos sistemas de visión construidos con estos chips y otros sistemas “off-chip” adicionales, como FPGAs, en concreto: El sistema Eye-RIS_v1; El sistema Eye-RIS_v2. Estos chips y sistemas están concebidos para ejecutar tareas de visión a muy alta velocidad y con consumos de potencia moderados. Los sistemas resultantes son, además, compactos y por lo tanto ventajosos en términos del factor SWaP cuando se los compara con arquitecturas convencionales formadas por sensores de imágenes convencionales seguidos de procesadores digitales. La clave de estas ventajas en términos de SWaP y velocidad radica en el uso de sensores-procesadores, en lugar de meros sensores, en la interface de los sistemas de visión. Estos sensores-procesadores embeben procesadores programables de señal-mixta dentro del pixel y son capaces tanto de adquirir imágenes como de pre-procesarlas para extraer características, eliminar información redundante y reducir el número de datos que se transmiten fuera del sensor para su procesamiento ulterior. El núcleo de la tesis es el sensor-procesador Q-Eye, que se usa como interface en los sistemas Eye-RIS. Este sensor-procesador embebe una arquitectura de procesamiento formada por procesadores de señal-mixta distribuidos por pixel. Sus píxeles son por tanto estructuras multi-funcionales complejas. De hecho, son programables, incorporan memorias e interactúan con sus vecinos para realizar una variedad de operaciones, tales como: Convoluciones lineales con máscaras programables; Difusiones controladas por tiempo y nivel de señal, a través de un “grid” resistivo embebido en el plano focal; Aritmética de imágenes; Flujo de programación dependiente de la señal; Conversión entre los dominios de datos: imagen en escala de grises e imagen binaria; Operaciones lógicas en imágenes binarias; Operaciones morfológicas en imágenes binarias. etc. Con respecto a otros píxeles multi-función y sensores-procesadores anteriores, el Q-Eye reporta entre otras las siguientes ventajas: Mayor calidad de la imagen y mejores prestaciones de las funcionalidades embebidas en el chip; Mayor velocidad de operación y mejor gestión de la energía disponible; Mayor versatilidad para integración en sistemas de visión industrial. De hecho, los sistemas Eye-RIS son los primeros sistemas de visión industriales dotados de las siguientes características: Procesamiento paralelo distribuido y progresivo; Procesadores de señal-mixta fiables, robustos y con errores controlados; Programabilidad distribuida. La Tesis incluye descripciones detalladas de la arquitectura y los circuitos usados en el pixel del Q-Eye, del propio chip Q-Eye y de los sistemas de visión construidos en base a este chip. Se incluyen también ejemplos de los distintos chips en operaciónThis Thesis presents architectures, circuits and chips for the implementation of CMOS VISION SENSORS with embedded parallel processing. The Thesis reports two chips, namely: Q-eye chip; Eye-RIS_VSoC chip, and two vision systems realized by using these chips and some additional “off-chip” circuitry, such as FPGAs. These vision systems are: Eye-RIS_v1 system; Eye-RIS_v2 system. The chips and systems reported in the Thesis are conceived to perform vision tasks at very high speed and with moderate power consumption. The proposed vision systems are also compact and advantageous in terms of SWaP factors as compared with conventional architectures consisting of standard image sensor followed by digital processors. The key of these advantages in terms of SWaP and speed lies in the use of sensors-processors, rather than mere sensors, in the front-end interface of vision systems. These sensors-processors embed mixed-signal programmable processors inside the pixel. Therefore, they are able to acquire images and process them to extract the features, removing the redundant information and reducing the data throughput for later processing. The core of the Thesis is the sensor-processor Q-Eye, which is used as front-end in the Eye-RIS systems. This sensor-processor embeds a processing architecture composed by mixed-signal processors distributed per pixel. Then, its pixels are complex multi-functional structures. In fact, they are programmable, incorporate memories and interact with its neighbors in order to carry out a set of operations, including: Linear convolutions with programmable linear masks; Time- and signal-controlled diffusions (by means of an embedded resistive grid); Image arithmetic; Signal-dependent data scheduling; Gray-scale to binary transformation; Logic operation on binary images; Mathematical morphology on binary images, etc. As compared with previous multi-function pixels and sensors-processors, the Q-Eye brings among other the following advantages: Higher image quality and better performances of functionalities embedded on chip; Higher operation speed and better management of energy budget; More versatility for integration in industrial vision systems. In fact, the Eye-RIS systems are the first industrial vision systems equipped with the following characteristics: Parallel distributed and progressive processing; Reliable, robust mixed-signal processors with handled errors; Distributed programmability. This Thesis includes detailed descriptions of architecture and circuits used in the Q-Eye pixel, in the Q-Eye chip itself and in the vision systems developed based on this chip. Also, several examples of chips and systems in operation are presented

Low-power CMOS digital-pixel Imagers for high-speed uncooled PbSe IR applications

This PhD dissertation describes the research and development of a new low-cost medium wavelength infrared MWIR monolithic imager technology for high-speed uncooled industrial applications. It takes the baton on the latest technological advances in the field of vapour phase deposition (VPD) PbSe-based medium wavelength IR (MWIR) detection accomplished by the industrial partner NIT S.L., adding fundamental knowledge on the investigation of novel VLSI analog and mixed-signal design techniques at circuit and system levels for the development of the readout integrated device attached to the detector. The work supports on the hypothesis that, by the use of the preceding design techniques, current standard inexpensive CMOS technologies fulfill all operational requirements of the VPD PbSe detector in terms of connectivity, reliability, functionality and scalability to integrate the device. The resulting monolithic PbSe-CMOS camera must consume very low power, operate at kHz frequencies, exhibit good uniformity and fit the CMOS read-out active pixels in the compact pitch of the focal plane, all while addressing the particular characteristics of the MWIR detector: high dark-to-signal ratios, large input parasitic capacitance values and remarkable mismatching in PbSe integration. In order to achieve these demands, this thesis proposes null inter-pixel crosstalk vision sensor architectures based on a digital-only focal plane array (FPA) of configurable pixel sensors. Each digital pixel sensor (DPS) cell is equipped with fast communication modules, self-biasing, offset cancellation, analog-to-digital converter (ADC) and fixed pattern noise (FPN) correction. In-pixel power consumption is minimized by the use of comprehensive MOSFET subthreshold operation. The main aim is to potentiate the integration of PbSe-based infra-red (IR)-image sensing technologies so as to widen its use, not only in distinct scenarios, but also at different stages of PbSe-CMOS integration maturity. For this purpose, we posit to investigate a comprehensive set of functional blocks distributed in two parallel approaches: • Frame-based “Smart” MWIR imaging based on new DPS circuit topologies with gain and offset FPN correction capabilities. This research line exploits the detector pitch to offer fully-digital programmability at pixel level and complete functionality with input parasitic capacitance compensation and internal frame memory. • Frame-free “Compact”-pitch MWIR vision based on a novel DPS lossless analog integrator and configurable temporal difference, combined with asynchronous communication protocols inside the focal plane. This strategy is conceived to allow extensive pitch compaction and readout speed increase by the suppression of in-pixel digital filtering, and the use of dynamic bandwidth allocation in each pixel of the FPA. In order make the electrical validation of first prototypes independent of the expensive PbSe deposition processes at wafer level, investigation is extended as well to the development of affordable sensor emulation strategies and integrated test platforms specifically oriented to image read-out integrated circuits. DPS cells, imagers and test chips have been fabricated and characterized in standard 0.15μm 1P6M, 0.35μm 2P4M and 2.5μm 2P1M CMOS technologies, all as part of research projects with industrial partnership. The research has led to the first high-speed uncooled frame-based IR quantum imager monolithically fabricated in a standard VLSI CMOS technology, and has given rise to the Tachyon series [1], a new line of commercial IR cameras used in real-time industrial, environmental and transportation control systems. The frame-free architectures investigated in this work represent a firm step forward to push further pixel pitch and system bandwidth up to the limits imposed by the evolving PbSe detector in future generations of the device.La present tesi doctoral descriu la recerca i el desenvolupament d'una nova tecnologia monolítica d'imatgeria infraroja de longitud d'ona mitja (MWIR), no refrigerada i de baix cost, per a usos industrials d'alta velocitat. El treball pren el relleu dels últims avenços assolits pel soci industrial NIT S.L. en el camp dels detectors MWIR de PbSe depositats en fase vapor (VPD), afegint-hi coneixement fonamental en la investigació de noves tècniques de disseny de circuits VLSI analògics i mixtes pel desenvolupament del dispositiu integrat de lectura unit al detector pixelat. Es parteix de la hipòtesi que, mitjançant l'ús de les esmentades tècniques de disseny, les tecnologies CMOS estàndard satisfan tots els requeriments operacionals del detector VPD PbSe respecte a connectivitat, fiabilitat, funcionalitat i escalabilitat per integrar de forma econòmica el dispositiu. La càmera PbSe-CMOS resultant ha de consumir molt baixa potència, operar a freqüències de kHz, exhibir bona uniformitat, i encabir els píxels actius CMOS de lectura en el pitch compacte del pla focal de la imatge, tot atenent a les particulars característiques del detector: altes relacions de corrent d'obscuritat a senyal, elevats valors de capacitat paràsita a l'entrada i dispersions importants en el procés de fabricació. Amb la finalitat de complir amb els requisits previs, es proposen arquitectures de sensors de visió de molt baix acoblament interpíxel basades en l'ús d'una matriu de pla focal (FPA) de píxels actius exclusivament digitals. Cada píxel sensor digital (DPS) està equipat amb mòduls de comunicació d'alta velocitat, autopolarització, cancel·lació de l'offset, conversió analògica-digital (ADC) i correcció del soroll de patró fixe (FPN). El consum en cada cel·la es minimitza fent un ús exhaustiu del MOSFET operant en subllindar. L'objectiu últim és potenciar la integració de les tecnologies de sensat d'imatge infraroja (IR) basades en PbSe per expandir-ne el seu ús, no només a diferents escenaris, sinó també en diferents estadis de maduresa de la integració PbSe-CMOS. En aquest sentit, es proposa investigar un conjunt complet de blocs funcionals distribuïts en dos enfocs paral·lels: - Dispositius d'imatgeria MWIR "Smart" basats en frames utilitzant noves topologies de circuit DPS amb correcció de l'FPN en guany i offset. Aquesta línia de recerca exprimeix el pitch del detector per oferir una programabilitat completament digital a nivell de píxel i plena funcionalitat amb compensació de la capacitat paràsita d'entrada i memòria interna de fotograma. - Dispositius de visió MWIR "Compact"-pitch "frame-free" en base a un novedós esquema d'integració analògica en el DPS i diferenciació temporal configurable, combinats amb protocols de comunicació asíncrons dins del pla focal. Aquesta estratègia es concep per permetre una alta compactació del pitch i un increment de la velocitat de lectura, mitjançant la supressió del filtrat digital intern i l'assignació dinàmica de l'ample de banda a cada píxel de l'FPA. Per tal d'independitzar la validació elèctrica dels primers prototips respecte a costosos processos de deposició del PbSe sensor a nivell d'oblia, la recerca s'amplia també al desenvolupament de noves estratègies d'emulació del detector d'IR i plataformes de test integrades especialment orientades a circuits integrats de lectura d'imatge. Cel·les DPS, dispositius d'imatge i xips de test s'han fabricat i caracteritzat, respectivament, en tecnologies CMOS estàndard 0.15 micres 1P6M, 0.35 micres 2P4M i 2.5 micres 2P1M, tots dins el marc de projectes de recerca amb socis industrials. Aquest treball ha conduït a la fabricació del primer dispositiu quàntic d'imatgeria IR d'alta velocitat, no refrigerat, basat en frames, i monolíticament fabricat en tecnologia VLSI CMOS estàndard, i ha donat lloc a Tachyon, una nova línia de càmeres IR comercials emprades en sistemes de control industrial, mediambiental i de transport en temps real.Postprint (published version

Analyses and design strategies for fundamental enabling building blocks: Dynamic comparators, voltage references and on-die temperature sensors

Dynamic comparators and voltage references are among the most widely used fundamental building blocks for various types of circuits and systems, such as data converters, PLLs, switching regulators, memories, and CPUs. As thermal constraints quickly emerged as a dominant performance limiter, on-die temperature sensors will be critical to the reliable operation of future integrated circuits. This dissertation investigates characteristics of these three enabling circuits and design strategies for improving their performances. One of the most critical specifications of a dynamic comparator is its input referred offset voltage, which is pivotal to achieving overall system performance requirements of many mixed-signal circuits and systems. Unlike offset voltages in other circuits such as amplifiers, the offset voltage in a dynamic comparator is extremely challenging to analyze and predict analytically due to its dependence on transient response and due to internal positive feedback and time-varying operating points in the comparator. In this work, a novel balanced method is proposed to facilitate the evaluation of time-varying operating points of transistors in a dynamic comparator. Two types of offsets are studied in the model: (1) static offset voltage caused by mismatches in mobilities, transistor sizes, and threshold voltages, and (2) dynamic offset voltage caused by mismatches in parasitic capacitors or loading capacitors. To validate the proposed method, dynamic comparators in two prevalent topologies are implemented in 0.25 μm and 40 nm CMOS technologies. Agreement between predicted results and simulated results verifies the effectiveness of the proposed method. The new method and the analytical models enable designers to identify the most dominant contributors to offset and to optimize the dynamic comparators\u27 performances. As an illustrating example, the Lewis-Gray dynamic comparator was analyzed using the balanced method and redesigned to minimize its offset voltage. Simulation results show that the offset voltage was easily reduced by 41% while maintaining the same silicon area. A bandgap voltage reference is one of the core functional blocks in both analog and digital systems. Despite the reported improvements in performance of voltage references, little attention has been focused on theoretical characterizations of non-ideal effects on the value of the output voltage, on the inflection point location and on the curvature of the reference voltage. In this work, a systematic approach is proposed to analytically determine the effects of two non-ideal elements: the temperature dependent gain-determining resistors and the amplifier offset voltage. The effectiveness of the analytical models is validated by comparing analytical results against Spectre simulation results. Research on on-die temperature sensor design has received rapidly increasing attention since component and power density induced thermal stress has become a critical factor in the reliable operation of integrated circuits. For effective power and thermal management of future multi-core systems, hundreds of sensors with sufficient accuracy, small area and low power are required on a single chip. This work introduces a new family of highly linear on chip temperature sensors. The proposed family of temperature sensors expresses CMOS threshold voltage as an output. The sensor output is independent of power supply voltage and independent of mobility values. It can achieve very high temperature linearity, with maximum nonlinearity around +/- 0.05oC over a temperature range of -20oC to 100oC. A sizing strategy based on combined analytical analysis and numerical optimization has been presented. Following this method, three circuits A, B and C have been designed in standard 0.18 ym CMOS technology, all achieving excellent linearity as demonstrated by Cadence Spectre simulations. Circuits B and C are the modified versions of circuit A, and have improved performance at the worst corner-low voltage supply and high threshold voltage corner. Finally, a direct temperature-to-digital converter architecture is proposed as a master-slave hybrid temperature-to-digital converter. It does not require any traditional constant reference voltage or reference current, it does not attempt to make any node voltage or branch current constant or precisely linear to temperature, yet it generates a digital output code that is very linear with temperature