Software trace cache

We explore the use of compiler optimizations, which optimize the layout of instructions in memory. The target is to enable the code to make better use of the underlying hardware resources regardless of the specific details of the processor/architecture in order to increase fetch performance. The Software Trace Cache (STC) is a code layout algorithm with a broader target than previous layout optimizations. We target not only an improvement in the instruction cache hit rate, but also an increase in the effective fetch width of the fetch engine. The STC algorithm organizes basic blocks into chains trying to make sequentially executed basic blocks reside in consecutive memory positions, then maps the basic block chains in memory to minimize conflict misses in the important sections of the program. We evaluate and analyze in detail the impact of the STC, and code layout optimizations in general, on the three main aspects of fetch performance; the instruction cache hit rate, the effective fetch width, and the branch prediction accuracy. Our results show that layout optimized, codes have some special characteristics that make them more amenable for high-performance instruction fetch. They have a very high rate of not-taken branches and execute long chains of sequential instructions; also, they make very effective use of instruction cache lines, mapping only useful instructions which will execute close in time, increasing both spatial and temporal locality.Peer ReviewedPostprint (published version

Exploiting cache locality at run-time

With the increasing gap between the speeds of the processor and memory system, memory access has become a major performance bottleneck in modern computer systems. Recently, Symmetric Multi-Processor (SMP) systems have emerged as a major class of high-performance platforms. Improving the memory performance of Parallel applications with dynamic memory-access patterns on Symmetric Multi-Processors (SMP) is a hard problem. The solution to this problem is critical to the successful use of the SMP systems because dynamic memory-access patterns occur in many real-world applications. This dissertation is aimed at solving this problem.;Based on a rigorous analysis of cache-locality optimization, we propose a memory-layout oriented run-time technique to exploit the cache locality of parallel loops. Our technique have been implemented in a run-time system. Using simulation and measurement, we have shown our run-time approach can achieve comparable performance with compiler optimizations for those regular applications, whose load balance and cache locality can be well optimized by tiling and other program transformations. However, our approach was shown to improve significantly the memory performance for applications with dynamic memory-access patterns. Such applications are usually hard to optimize with static compiler optimizations.;Several contributions are made in this dissertation. We present models to characterize the complexity and present a solution framework for optimizing cache locality. We present an effective estimation technique for memory-access patterns to support efficient locality optimizations and information integration. We present a memory-layout oriented run-time technique for locality optimization. We present efficient scheduling algorithms to trade off locality and load imbalance. We provide a detailed performance evaluation of the run-time technique

Gestión de jerarquías de memoria híbridas a nivel de sistema

Tesis inédita de la Universidad Complutense de Madrid, Facultad de Informática, Departamento de Arquitectura de Computadoras y Automática y de Ku Leuven, Arenberg Doctoral School, Faculty of Engineering Science, leída el 11/05/2017.In electronics and computer science, the term ‘memory’ generally refers to devices that are used to store information that we use in various appliances ranging from our PCs to all hand-held devices, smart appliances etc. Primary/main memory is used for storage systems that function at a high speed (i.e. RAM). The primary memory is often associated with addressable semiconductor memory, i.e. integrated circuits consisting of silicon-based transistors, used for example as primary memory but also other purposes in computers and other digital electronic devices. The secondary/auxiliary memory, in comparison provides program and data storage that is slower to access but offers larger capacity. Examples include external hard drives, portable flash drives, CDs, and DVDs. These devices and media must be either plugged in or inserted into a computer in order to be accessed by the system. Since secondary storage technology is not always connected to the computer, it is commonly used for backing up data. The term storage is often used to describe secondary memory. Secondary memory stores a large amount of data at lesser cost per byte than primary memory; this makes secondary storage about two orders of magnitude less expensive than primary storage. There are two main types of semiconductor memory: volatile and nonvolatile. Examples of non-volatile memory are ‘Flash’ memory (sometimes used as secondary, sometimes primary computer memory) and ROM/PROM/EPROM/EEPROM memory (used for firmware such as boot programs). Examples of volatile memory are primary memory (typically dynamic RAM, DRAM), and fast CPU cache memory (typically static RAM, SRAM, which is fast but energy-consuming and offer lower memory capacity per are a unit than DRAM). Non-volatile memory technologies in Si-based electronics date back to the 1990s. Flash memory is widely used in consumer electronic products such as cellphones and music players and NAND Flash-based solid-state disks (SSDs) are increasingly displacing hard disk drives as the primary storage device in laptops, desktops, and even data centers. The integration limit of Flash memories is approaching, and many new types of memory to replace conventional Flash memories have been proposed. The rapid increase of leakage currents in Silicon CMOS transistors with scaling poses a big challenge for the integration of SRAM memories. There is also the case of susceptibility to read/write failure with low power schemes. As a result of this, over the past decade, there has been an extensive pooling of time, resources and effort towards developing emerging memory technologies like Resistive RAM (ReRAM/RRAM), STT-MRAM, Domain Wall Memory and Phase Change Memory(PRAM). Emerging non-volatile memory technologies promise new memories to store more data at less cost than the expensive-to build silicon chips used by popular consumer gadgets including digital cameras, cell phones and portable music players. These new memory technologies combine the speed of static random-access memory (SRAM), the density of dynamic random-access memory (DRAM), and the non-volatility of Flash memory and so become very attractive as another possibility for future memory hierarchies. The research and information on these Non-Volatile Memory (NVM) technologies has matured over the last decade. These NVMs are now being explored thoroughly nowadays as viable replacements for conventional SRAM based memories even for the higher levels of the memory hierarchy. Many other new classes of emerging memory technologies such as transparent and plastic, three-dimensional(3-D), and quantum dot memory technologies have also gained tremendous popularity in recent years...En el campo de la informática, el término ‘memoria’ se refiere generalmente a dispositivos que son usados para almacenar información que posteriormente será usada en diversos dispositivos, desde computadoras personales (PC), móviles, dispositivos inteligentes, etc. La memoria principal del sistema se utiliza para almacenar los datos e instrucciones de los procesos que se encuentre en ejecución, por lo que se requiere que funcionen a alta velocidad (por ejemplo, DRAM). La memoria principal está implementada habitualmente mediante memorias semiconductoras direccionables, siendo DRAM y SRAM los principales exponentes. Por otro lado, la memoria auxiliar o secundaria proporciona almacenaje(para ficheros, por ejemplo); es más lenta pero ofrece una mayor capacidad. Ejemplos típicos de memoria secundaria son discos duros, memorias flash portables, CDs y DVDs. Debido a que estos dispositivos no necesitan estar conectados a la computadora de forma permanente, son muy utilizados para almacenar copias de seguridad. La memoria secundaria almacena una gran cantidad de datos aun coste menor por bit que la memoria principal, siendo habitualmente dos órdenes de magnitud más barata que la memoria primaria. Existen dos tipos de memorias de tipo semiconductor: volátiles y no volátiles. Ejemplos de memorias no volátiles son las memorias Flash (algunas veces usadas como memoria secundaria y otras veces como memoria principal) y memorias ROM/PROM/EPROM/EEPROM (usadas para firmware como programas de arranque). Ejemplos de memoria volátil son las memorias DRAM (RAM dinámica), actualmente la opción predominante a la hora de implementar la memoria principal, y las memorias SRAM (RAM estática) más rápida y costosa, utilizada para los diferentes niveles de cache. Las tecnologías de memorias no volátiles basadas en electrónica de silicio se remontan a la década de1990. Una variante de memoria de almacenaje por carga denominada como memoria Flash es mundialmente usada en productos electrónicos de consumo como telefonía móvil y reproductores de música mientras NAND Flash solid state disks(SSDs) están progresivamente desplazando a los dispositivos de disco duro como principal unidad de almacenamiento en computadoras portátiles, de escritorio e incluso en centros de datos. En la actualidad, hay varios factores que amenazan la actual predominancia de memorias semiconductoras basadas en cargas (capacitivas). Por un lado, se está alcanzando el límite de integración de las memorias Flash, lo que compromete su escalado en el medio plazo. Por otra parte, el fuerte incremento de las corrientes de fuga de los transistores de silicio CMOS actuales, supone un enorme desafío para la integración de memorias SRAM. Asimismo, estas memorias son cada vez más susceptibles a fallos de lectura/escritura en diseños de bajo consumo. Como resultado de estos problemas, que se agravan con cada nueva generación tecnológica, en los últimos años se han intensificado los esfuerzos para desarrollar nuevas tecnologías que reemplacen o al menos complementen a las actuales. Los transistores de efecto campo eléctrico ferroso (FeFET en sus siglas en inglés) se consideran una de las alternativas más prometedores para sustituir tanto a Flash (por su mayor densidad) como a DRAM (por su mayor velocidad), pero aún está en una fase muy inicial de su desarrollo. Hay otras tecnologías algo más maduras, en el ámbito de las memorias RAM resistivas, entre las que cabe destacar ReRAM (o RRAM), STT-RAM, Domain Wall Memory y Phase Change Memory (PRAM)...Depto. de Arquitectura de Computadores y AutomáticaFac. de InformáticaTRUEunpu

Performance Improvements Using Dynamic Performance Stubs

This thesis proposes a new methodology to extend the software performance engineering process. Common performance measurement and tuning principles mainly target to improve the software function itself. Hereby, the application source code is studied and improved independently of the overall system performance behavior. Moreover, the optimization of the software function has to be done without an estimation of the expected optimization gain. This often leads to an under- or overoptimization, and hence, does not utilize the system sufficiently. The proposed performance improvement methodology and framework, called dynamic performance stubs, improves the before mentioned insufficiencies by evaluating the overall system performance improvement. This is achieved by simulating the performance behavior of the original software functionality depending on an adjustable optimization level prior to the real optimization. So, it enables the software performance analyst to determine the systems’ overall performance behavior considering possible outcomes of different improvement approaches. Moreover, by using the dynamic performance stubs methodology, a cost-benefit analysis of different optimizations regarding the performance behavior can be done. The approach of the dynamic performance stubs is to replace the software bottleneck by a stub. This stub combines the simulation of the software functionality with the possibility to adjust the performance behavior depending on one or more different performance aspects of the replaced software function. A general methodology for using dynamic performance stubs as well as several methodologies for simulating different performance aspects is discussed. Finally, several case studies to show the application and usability of the dynamic performance stubs approach are presented

FRAM based low power systems for low duty cycle applications

Thesis (M.S.) University of Alaska Fairbanks, 2019Ferro-Electric Random Access Memory (FRAM) is a leap forward in non-volatile data storage technology for embedded systems. It allows for persistent storage without any power consumption, fulfilling the same role as flash memory. FRAM, however, provides several major advantages over flash memory, which can be leveraged to substantially reduce sleep current in a device. In applications where most of the time is spent sleeping these reductions can have a large impact on the average current. With careful design sleep currents as low as 72 nA have been demonstrated. A lower current consumption allows for more flexibility in deploying the device; smaller batteries or alternative power sources can be considered, and operating life can be extended. FRAM is not appropriate for every situation and there are some considerations to obtain the maximum benefit from its use. An MSP430FR2311 microcontroller is used to measure the performance of the FRAM and how to structure a program to achieve the lowest power consumption. Clock speed and instruction caching in particular have a large effect on the power consumption and tests are performed to quantify their effect. Two case studies are considered, a feedback control system and a data logger. Both cases involve large amounts of data writes and allow for the effects of the FRAM to be easily observed. Expected battery life is determined for each case when the sample rate is varied, suggesting that average operating current for the two solutions will nearly converge when the sampling period exceeds 1000 s. For sampling periods on the order of one second operating current can be reduced from 15.4 μA to 730 nA by utilizing FRAM in lieu of flash

AutoAccel: Automated Accelerator Generation and Optimization with Composable, Parallel and Pipeline Architecture

CPU-FPGA heterogeneous architectures are attracting ever-increasing attention in an attempt to advance computational capabilities and energy efficiency in today's datacenters. These architectures provide programmers with the ability to reprogram the FPGAs for flexible acceleration of many workloads. Nonetheless, this advantage is often overshadowed by the poor programmability of FPGAs whose programming is conventionally a RTL design practice. Although recent advances in high-level synthesis (HLS) significantly improve the FPGA programmability, it still leaves programmers facing the challenge of identifying the optimal design configuration in a tremendous design space. This paper aims to address this challenge and pave the path from software programs towards high-quality FPGA accelerators. Specifically, we first propose the composable, parallel and pipeline (CPP) microarchitecture as a template of accelerator designs. Such a well-defined template is able to support efficient accelerator designs for a broad class of computation kernels, and more importantly, drastically reduce the design space. Also, we introduce an analytical model to capture the performance and resource trade-offs among different design configurations of the CPP microarchitecture, which lays the foundation for fast design space exploration. On top of the CPP microarchitecture and its analytical model, we develop the AutoAccel framework to make the entire accelerator generation automated. AutoAccel accepts a software program as an input and performs a series of code transformations based on the result of the analytical-model-based design space exploration to construct the desired CPP microarchitecture. Our experiments show that the AutoAccel-generated accelerators outperform their corresponding software implementations by an average of 72x for a broad class of computation kernels