71,294 research outputs found

    Semiconductor quantum dots devices: Recent advances and application prospects

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    In this paper, a brief review will be given on recent advances in semiconductor quantum dots based optoelectronic devices. The focus will be on two major application areas, i.e., telecom devices and high power light sources, where some device examples will be discussed on the current status and for the future prospect

    Control of threshold voltage in E-mode and D-mode GaN-on-Si metal-insulator-semiconductor heterostructure field effect transistors by in-situ fluorine doping of atomic layer deposition Al2O3 gate dielectrics

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    We report the modification and control of threshold voltage in enhancement and depletion mode AlGaN/GaN metal-insulator-semiconductor heterostructure field effect transistors through the use of in-situ fluorine doping of atomic layer deposition Al2O3. Uniform distribution of F ions throughout the oxide thickness are achievable, with a doping level of up to 5.5 × 1019 cm−3 as quantified by secondary ion mass spectrometry. This fluorine doping level reduces capacitive hysteretic effects when exploited in GaN metal-oxide-semiconductor capacitors. The fluorine doping and forming gas anneal also induces an average positive threshold voltage shift of between 0.75 and 1.36 V in both enhancement mode and depletion mode GaN-based transistors compared with the undoped gate oxide via a reduction of positive fixed charge in the gate oxide from +4.67 × 1012 cm−2 to −6.60 × 1012 cm−2. The application of this process in GaN based power transistors advances the realisation of normally off, high power, high speed devices

    Two decades of condition monitoring methods for power devices

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    Condition monitoring (CM) of power semiconductor devices enhances converter reliability and customer service. Many studies have investigated the semiconductor devices failure modes, the sensor technologies, and the signal processing techniques to optimize the CM. Furthermore, the improvement of power devices’ CM thanks to the use of the Internet of Things and artificial intelligence technologies is rising in smart grids, transportation electrification, and so on. These technologies will be widespread in the future, where more and more smart techniques and smart sensors will enable a better estimation of the state of the health (SOH) of the devices. Considering the increasing use of power converters, CM is essential as the analysis of the data obtained from multiple sensors enables the prediction of the SOH, which, in turn, enables to properly schedule the maintenance, i.e., accounting for the trade-off between the maintenance cost and the cost and issues due to the device failure. From this perspective, this review paper summarizes past developments and recent advances of the various methods with the aim of describing the current state-of-the-art in CM research

    Ultra-efficient frequency comb generation in AlGaAs-on-insulator microresonators

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    Recent advances in nonlinear optics have revolutionized integrated photonics, providing on-chip solutions to a wide range of new applications. Currently, state of the art integrated nonlinear photonic devices are mainly based on dielectric material platforms, such as Si₃N₄ and SiO₂. While semiconductor materials feature much higher nonlinear coefficients and convenience in active integration, they have suffered from high waveguide losses that prevent the realization of efficient nonlinear processes on-chip. Here, we challenge this status quo and demonstrate a low loss AlGaAs-on-insulator platform with anomalous dispersion and quality (Q) factors beyond 1.5 × 10⁶. Such a high quality factor, combined with high nonlinear coefficient and small mode volume, enabled us to demonstrate a Kerr frequency comb threshold of only ∌36 ”W in a resonator with a 1 THz free spectral range, ∌100 times lower compared to that in previous semiconductor platforms. Moreover, combs with broad spans (>250 nm) have been generated with a pump power of ∌300 ”W, which is lower than the threshold power of state-of the-art dielectric micro combs. A soliton-step transition has also been observed for the first time in an AlGaAs resonator

    Nonlinear Dynamics of Semiconductor Lasers and Their Applications

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    Semiconductor lasers are key components in many optical systems due to their advantages, including their small size, low cost, high efficiency, and low power consumption. It is well-known that semiconductor lasers under external perturbations, such as optical injection, optical feedback, or delayed coupling can exhibit a large variety of complex dynamical behaviors. Nowadays, cutting-edge engineering applications based on the complex dynamics of diode lasers are being conducted in areas, such as optical communications, optical signal processing, encoded communications, neuro-inspired ultra-fast optical computing devices, microwave signal generation, RADAR and LIDAR applications, biomedical imaging, and broadband spectroscopy. The prospects for these applications are even more exciting with the advent of photonic integrated circuits. This Special Issue focuses on theoretical and experimental advances in the nonlinear dynamics of semiconductor lasers subject to different types of external perturbations

    Roadmap on semiconductor-cell biointerfaces.

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    This roadmap outlines the role semiconductor-based materials play in understanding the complex biophysical dynamics at multiple length scales, as well as the design and implementation of next-generation electronic, optoelectronic, and mechanical devices for biointerfaces. The roadmap emphasizes the advantages of semiconductor building blocks in interfacing, monitoring, and manipulating the activity of biological components, and discusses the possibility of using active semiconductor-cell interfaces for discovering new signaling processes in the biological world

    Advances in small lasers

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    M.T.H was supported by an Australian Research council Future Fellowship research grant for this work. M.C.G. is grateful to the Scottish Funding Council (via SUPA) for financial support.Small lasers have dimensions or modes sizes close to or smaller than the wavelength of emitted light. In recent years there has been significant progress towards reducing the size and improving the characteristics of these devices. This work has been led primarily by the innovative use of new materials and cavity designs. This Review summarizes some of the latest developments, particularly in metallic and plasmonic lasers, improvements in small dielectric lasers, and the emerging area of small bio-compatible or bio-derived lasers. We examine the different approaches employed to reduce size and how they result in significant differences in the final device, particularly between metal- and dielectric-cavity lasers. We also present potential applications for the various forms of small lasers, and indicate where further developments are required.PostprintPeer reviewe

    Van der Waals Materials for Atomically-Thin Photovoltaics: Promise and Outlook

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    Two-dimensional (2D) semiconductors provide a unique opportunity for optoelectronics due to their layered atomic structure, electronic and optical properties. To date, a majority of the application-oriented research in this field has been focused on field-effect electronics as well as photodetectors and light emitting diodes. Here we present a perspective on the use of 2D semiconductors for photovoltaic applications. We discuss photonic device designs that enable light trapping in nanometer-thickness absorber layers, and we also outline schemes for efficient carrier transport and collection. We further provide theoretical estimates of efficiency indicating that 2D semiconductors can indeed be competitive with and complementary to conventional photovoltaics, based on favorable energy bandgap, absorption, external radiative efficiency, along with recent experimental demonstrations. Photonic and electronic design of 2D semiconductor photovoltaics represents a new direction for realizing ultrathin, efficient solar cells with applications ranging from conventional power generation to portable and ultralight solar power.Comment: 4 figure

    Semiconductor Memory Devices for Hardware-Driven Neuromorphic Systems

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    This book aims to convey the most recent progress in hardware-driven neuromorphic systems based on semiconductor memory technologies. Machine learning systems and various types of artificial neural networks to realize the learning process have mainly focused on software technologies. Tremendous advances have been made, particularly in the area of data inference and recognition, in which humans have great superiority compared to conventional computers. In order to more effectively mimic our way of thinking in a further hardware sense, more synapse-like components in terms of integration density, completeness in realizing biological synaptic behaviors, and most importantly, energy-efficient operation capability, should be prepared. For higher resemblance with the biological nervous system, future developments ought to take power consumption into account and foster revolutions at the device level, which can be realized by memory technologies. This book consists of seven articles in which most recent research findings on neuromorphic systems are reported in the highlights of various memory devices and architectures. Synaptic devices and their behaviors, many-core neuromorphic platforms in close relation with memory, novel materials enabling the low-power synaptic operations based on memory devices are studied, along with evaluations and applications. Some of them can be practically realized due to high Si processing and structure compatibility with contemporary semiconductor memory technologies in production, which provides perspectives of neuromorphic chips for mass production
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