Terahertz Monolithic Integrated Circuits (TMICs) Array Antenna Technology On GaN-on-Low Resistivity Silicon Substrates

In this paper, we have demonstrated a viable microstrip array patch antenna technology for the first time on GaN-on-low resistivity silicon (LR-Si) substrates (ρ <; 40 Ω.cm) at H-band frequencies (220-325 GHz). The developed technology is compatible with standard MMIC technology with no requirement for high temperature processes. To mitigate the losses presented by the substrate and to enhance the performance of the integrated array antenna at THz frequencies, the driven patch is shielded by silicon nitride and gold layer in addition to a layer of benzocyclobutene (BCB). The demonstrated 4×1 array integrated antenna showed a measured resonance frequency in agreement with our simulation at 0.27 THz; a measured S11 as low as -41 dB was obtained. A directivity, gain and radiation efficiency of 11.2 dB, 5.2 dB, and 20% respectively was observed from the 3D EM model for a 5 μm BCB inset. To the authors' knowledge, this is the first demonstration of a THz integrated microstrip array antenna for TMIC technology; this developed technology is promising for high performance III-V electronic material on low resistivity/high dielectric substrates

Passive Components Technology for THz-Monolithic Integrated Circuits (THz-MIC)

In this work, a viable passive components and transmission media technology is presented for THz-Monolithic Integrated Circuits (THz-MIC). The developed technology is based on shielded microstrip (S-MS) employing a standard monolithic microwave integrated circuit compatible process. The S-MS transmission media uses a 5-μm layer of benzocyclobutene (BCB) on shielded metalized ground plates avoiding any substrate coupling effects. An insertion loss of less than 3 dB/mm was achieved for frequencies up to 750 GHz. To prove the effectiveness of the technology, a variety of test structures, passive components and antennas have been design, fabricated and characterized. High Q performance was demonstrated making such technology a strong candidate for future THz-MIC technology for many applications such as radar, communications, imaging and sensing

Focal plane arrays for submillimeter waves using two-dimensional electron gas elements: A grant under the Innovative Research Program

This final report describes a three-year research effort, aimed at developing new types of THz low noise receivers, based on bulk effect ('hot electron') nonlinearities in the Two-Dimensional Electron Gas (2DEG) Medium, and the inclusion of such receivers in focal plane arrays. 2DEG hot electron mixers have been demonstrated at 35 and 94 GHz with three orders of magnitude wider bandwidth than previous hot electron mixers, which use bulk InSb. The 2DEG mixers employ a new mode of operation, which was invented during this program. Only moderate cooling is required for this mode, to temperatures in the range 20-77 K. Based on the results of this research, it is now possible to design a hot electron mixer focal plane array for the THz range, which is anticipated to have a DSB receiver noise temperature of 500-1000K. In our work on this grant, we have found similar results the the Cronin group (resident at the University of Bath, UK). Neither group has so far demonstrated heterodyne detection in this mode, however. We discovered and explored some new effects in the magnetic field mode, and these are described in the report. In particular, detection of 94 GHz and 238 GHz, respectively, by a new effect, 'Shubnikov de Haas detection', was found to be considerably stronger in our materials than the cyclotron resonance detection. All experiments utilized devices with an active 2DEG region of size of the order of 10-40 micrometers long, and 20-200 micrometers wide, formed at the heterojunction between AlGaAs and GaAs. All device fabrication was performed in-house. The materials for the devices were also grown in-house, utilizing OMCVD (Organo Metallic Chemical Vapor Deposition). In the course of this grant, we developed new techniques for growing AlGaAs/GaAs with mobilities equalling the highest values published by any laboratory. We believe that the field of hot electron mixers and detectors will grow substantially in importance in the next few years, partly as a result of the opportunity given us through this grant, which represents the major effort in the US so far. We note, however, that parallel research on hot electron mixers in thin film superconductors in Russia, and recently in Sweden, have demonstrated mixing up to 1 THz, with the potential for low-noise receivers for frequencies up to many THz. The three groups recently assessed the relative adtantages of 2DEG and superconducting film mixers in a joint paper (Kollberg et al., 1992; see Appendix II)

A review on the Surface Integrated Waveguide (SIW): integrating a rectangular waveguide in a planar (M)MIC

The paper provides a review on the Surface Integrated Waveguide approach to microwave and millimeter wave circuits. Although the history of SIWs is comparatively recent, this guiding structure has proven the capability to integrate within a (M)MIC approach a rectangular waveguide, allowing for the development of high Q and low-loss component that cannot be implemented in quasi-TEM transmissive media, like the stripline, the microstrip and coplanar waveguide. During the last few years SIW components and circuits have shown excellent capabilities in microwave and millimeter wave applications, providing low-cost, miniaturized implementations for a variety of passive components, such as filters, directional couplers, resonators, and antenna feeding systems. Micromachining has demonstrated the capabilities of the SIW approach within the framework of monolithic integrated passive components, while SIW implementations in flexible substrates will pave the way to low-cost, consumer electronic products that could not be realized in conventional quasi-TEM transmission lines

Monolithic Millimeter-ware Frequency Multipliers

l'obbiettivo di questa tesi è la progettazione di moltiplicatori di frequenza monolitici in tecnologia INFINEON SiGe bipolare. I moltiplicatori progettati sono frequency octuplers basati su tre frequency doublers in cascata seguiti da un buffer d'uscita.Due differenti frequency octuplers sono stati progettati. Ciascun frequency doubler è basato sulla cella di GilbertopenEmbargo temporane

Millimetre-wave and Terahertz Electronics

Overview: The basic thesis for the advancement of millimetre-wave and terahertz electronics is represented in four sections: Signal Processing, Component Design and Realization, Modelling and Materials, and Paradigm Shift. The first section is at system and circuit levels and reports on complex signal process functions that have been performed directly on the millimetre-wave carrier signal, intended for realizing low-cost and adaptive communications and radar systems architectures. The second section is at circuit and component levels and reports on techniques for the design and realization of low-loss passives for use at millimetrewave frequencies. The third section is at component and material levels and reports on modelling techniques for passives for use at both millimetre-wave and terahertz frequencies. Finally, the fourth section introduces a revolutionary new technology that represents a paradigm shift in the way millimetre-wave and terahertz electronics (i.e. components, circuits and systems) can be implemented. As found with the new generation of mobile phone handsets, a fusion of two extreme technologies can take place; here, complex signal processing operations could be performed both directly on the carrier signal and with the use of a spatial light modulator. Based on a selection of 20 papers (co-)authored by the candidate †b, and published over a period of 15 years, it will be seen that a coherent theme runs throughout this body of work, for the advancement of knowledge in millimetre-wave and terahertz electronics

iBROW – innovative ultra-BROadband ubiquitous wireless communications through terahertz transceivers

No abstract available