414 research outputs found
Analog/RF Circuit Design Techniques for Nanometerscale IC Technologies
CMOS evolution introduces several problems in analog design. Gate-leakage mismatch exceeds conventional matching tolerances requiring active cancellation techniques or alternative architectures. One strategy to deal with the use of lower supply voltages is to operate critical parts at higher supply voltages, by exploiting combinations of thin- and thick-oxide transistors. Alternatively, low voltage circuit techniques are successfully developed. In order to benefit from nanometer scale CMOS technology, more functionality is shifted to the digital domain, including parts of the RF circuits. At the same time, analog control for digital and digital control for analog emerges to deal with current and upcoming imperfections
Thermal-Aware Networked Many-Core Systems
Advancements in IC processing technology has led to the innovation and growth happening in the consumer electronics sector and the evolution of the IT infrastructure supporting this exponential growth. One of the most difficult obstacles to this growth is the removal of large amount of heatgenerated by the processing and communicating nodes on the system. The scaling down of technology and the increase in power density is posing a direct and consequential effect on the rise in temperature. This has resulted in the increase in cooling budgets, and affects both the life-time reliability and performance of the system. Hence, reducing on-chip temperatures has become a major design concern for modern microprocessors.
This dissertation addresses the thermal challenges at different levels for both 2D planer and 3D stacked systems. It proposes a self-timed thermal monitoring strategy based on the liberal use of on-chip thermal sensors. This makes use of noise variation tolerant and leakage current based thermal sensing for monitoring purposes. In order to study thermal management issues from early design stages, accurate thermal modeling and analysis at design time is essential. In this regard, spatial temperature profile of the global Cu nanowire for on-chip interconnects has been analyzed. It presents a 3D thermal model of a multicore system in order to investigate the effects of hotspots and the placement of silicon die layers, on the thermal performance of a modern ip-chip package. For a 3D stacked system, the primary design goal is to maximise the performance within the given power and thermal envelopes. Hence, a thermally efficient routing strategy for 3D NoC-Bus hybrid architectures has been proposed to mitigate on-chip temperatures by herding most of the switching activity to the die which is closer to heat sink. Finally, an exploration of various thermal-aware placement approaches for both the 2D and 3D stacked systems has been presented. Various thermal models have been developed and thermal control metrics have been extracted. An efficient thermal-aware application mapping algorithm for a 2D NoC has been presented. It has been shown that the proposed mapping algorithm reduces the effective area reeling under high temperatures when compared to the state of the art.Siirretty Doriast
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Integrated temperature sensors in deep sub-micron CMOS technologies
textIntegrated temperature sensors play an important role in enhancing the performance of on-chip power and thermal management systems in today's highly-integrated system-on-chip (SoC) platforms, such as microprocessors. Accurate on-chip temperature measurement is essential to maximize the performance and reliability of these SoCs. However, due to non-uniform power consumption by different functional blocks, microprocessors have fairly large thermal gradient (and variation) across their chips. In the case of multi-core microprocessors for example, there are task-specific thermal gradients across different cores on the same die. As a result, multiple temperature sensors are needed to measure the temperature profile at all relevant coordinates of the chip. Subsequently, the results of the temperature measurements are used to take corrective measures to enhance the performance, or save the SoC from catastrophic over-heating situations which can cause permanent damage. Furthermore, in a large multi-core microprocessor, it is also imperative to continuously monitor potential hot-spots that are prone to thermal runaway. The locations of such hot spots depend on the operations and instruction the processor carries out at a given time. Due to practical limitations, it is an overkill to place a big size temperature sensor nearest to all possible hot spots. Thus, an ideal on-chip temperature sensor should have minimal area so that it can be placed non-invasively across the chip without drastically changing the chip floor plan. In addition, the power consumption of the sensors should be very low to reduce the power budget overhead of thermal monitoring system, and to minimize measurement inaccuracies due to self-heating. The objective of this research is to design an ultra-small size and ultra-low power temperature sensor such that it can be placed in the intimate proximity of all possible hot spots across the chip. The general idea is to use the leakage current of a reverse-bias p-n junction diode as an operand for temperature sensing. The tasks within this project are to examine the theoretical aspect of such sensors in both Silicon-On-Insulator (SOI), and bulk Complementary Metal-Oxide Semiconductor (CMOS) technologies, implement them in deep sub-micron technologies, and ultimately evaluate their performances, and compare them to existing solutions.Electrical and Computer Engineerin
Robust Circuit Design for Low-Voltage VLSI.
Voltage scaling is an effective way to reduce the overall power consumption, but the major challenges in low voltage operations include performance degradation and reliability issues due to PVT variations. This dissertation discusses three key circuit components that are critical in low-voltage VLSI.
Level converters must be a reliable interface between two voltage domains, but the reduced on/off-current ratio makes it extremely difficult to achieve robust conversions at low voltages. Two static designs are proposed: LC2 adopts a novel pulsed-operation and modulates its pull-up strength depending on its state. A 3-sigma robustness is guaranteed using a current margin plot; SLC inherently reduces the contention by diode-insertion. Improvements in performance, power, and robustness are measured from 130nm CMOS test chips.
SRAM is a major bottleneck in voltage-scaling due to its inherent ratioed-bitcell design. The proposed 7T SRAM alleviates the area overhead incurred by 8T bitcells and provides robust operation down to 0.32V in 180nm CMOS test chips with 3.35fW/bit leakage. Auto-Shut-Off provides a 6.8x READ energy reduction, and its innate Quasi-Static READ has been demonstrated which shows a much improved READ error rate. A use of PMOS Pass-Gate improves the half-select robustness by directly modulating the device strength through bitline voltage.
Clocked sequential elements, flip-flops in short, are ubiquitous in today’s digital systems. The proposed S2CFF is static, single-phase, contention-free, and has the same number of devices as in TGFF. It shows a 40% power reduction as well as robust low-voltage operations in fabricated 45nm SOI test chips. Its simple hold-time path and the 3.4x improvement in 3-sigma hold-time is presented. A new on-chip flip-flop testing harness is also proposed, and measured hold-time variations of flip-flops are presented.PhDElectrical EngineeringUniversity of Michigan, Horace H. Rackham School of Graduate Studieshttp://deepblue.lib.umich.edu/bitstream/2027.42/111525/1/yejoong_1.pd
Integrated Circuit Design in US High-Energy Physics
This whitepaper summarizes the status, plans, and challenges in the area of
integrated circuit design in the United States for future High Energy Physics
(HEP) experiments. It has been submitted to CPAD (Coordinating Panel for
Advanced Detectors) and the HEP Community Summer Study 2013(Snowmass on the
Mississippi) held in Minnesota July 29 to August 6, 2013. A workshop titled: US
Workshop on IC Design for High Energy Physics, HEPIC2013 was held May 30 to
June 1, 2013 at Lawrence Berkeley National Laboratory (LBNL). A draft of the
whitepaper was distributed to the attendees before the workshop, the content
was discussed at the meeting, and this document is the resulting final product.
The scope of the whitepaper includes the following topics: Needs for IC
technologies to enable future experiments in the three HEP frontiers Energy,
Cosmic and Intensity Frontiers; Challenges in the different technology and
circuit design areas and the related R&D needs; Motivation for using different
fabrication technologies; Outlook of future technologies including 2.5D and 3D;
Survey of ICs used in current experiments and ICs targeted for approved or
proposed experiments; IC design at US institutes and recommendations for
collaboration in the future
Wide-Dynamic Range Image Sensor Prototype Based On Digital Readout Integrated Circuit
Emerging infrared and visible imaging applications require higher sensitivity, larger pixel array, larger contrast ratio (dynamic range), very low power consumption and faster data readout rate operations all at the same time. Some of these applications are camera surveillance used both in day/night (very bright and dark conditions), medical diagnostics, weather forecasting, and aerial search & rescue operations etc. The digital-pixel focal plane array (DFPA) implemented in this thesis has the capabilities to capture a wide dynamic range of more than 120dB in a single global shutter without saturating the pixels at a huge frame rate of more than 500Hz. An adaptive Integration Window technique has been developed which ensures that we are able to measure such a huge dynamic range using a counter of only 10 bits (this helps us lower the power consumption of the design). This proposed image sensor has been designed, fabricated and tested in 65nm CMOS technology. It has 16 x 16-pixel array with 16 x 9 pixels with an inbuilt Silicon APD for optical testing and 16 x 7 dummy pixels for electrical testing. Our design proposes an off-chip digital calibration technique to cut down the burden on the analog circuitry. The sensor design achieved more than 128dB+ of dynamic range with a DNL/INL of 0.65/1.65 respectively with a power consumption of only 0.58 uW/pixel. The digital calibration scheme successfully cuts down the pixel-pixel variation standard deviations by a factor of 4. The proposed image sensor design should be able to address most of the short-comings of conventional FPAs and provides a one-shot solution to the design of high performance CMOS image sensors
ULTRA ENERGY-EFFICIENT SUB-/NEAR-THRESHOLD COMPUTING: PLATFORM AND METHODOLOGY
Ph.DDOCTOR OF PHILOSOPH
Bioelectronic Sensor Nodes for Internet of Bodies
Energy-efficient sensing with Physically-secure communication for bio-sensors
on, around and within the Human Body is a major area of research today for
development of low-cost healthcare, enabling continuous monitoring and/or
secure, perpetual operation. These devices, when used as a network of nodes
form the Internet of Bodies (IoB), which poses certain challenges including
stringent resource constraints (power/area/computation/memory), simultaneous
sensing and communication, and security vulnerabilities as evidenced by the DHS
and FDA advisories. One other major challenge is to find an efficient on-body
energy harvesting method to support the sensing, communication, and security
sub-modules. Due to the limitations in the harvested amount of energy, we
require reduction of energy consumed per unit information, making the use of
in-sensor analytics/processing imperative. In this paper, we review the
challenges and opportunities in low-power sensing, processing and
communication, with possible powering modalities for future bio-sensor nodes.
Specifically, we analyze, compare and contrast (a) different sensing mechanisms
such as voltage/current domain vs time-domain, (b) low-power, secure
communication modalities including wireless techniques and human-body
communication, and (c) different powering techniques for both wearable devices
and implants.Comment: 30 pages, 5 Figures. This is a pre-print version of the article which
has been accepted for Publication in Volume 25 of the Annual Review of
Biomedical Engineering (2023). Only Personal Use is Permitte
Energy autonomous systems : future trends in devices, technology, and systems
The rapid evolution of electronic devices since the beginning of the nanoelectronics era has brought about exceptional computational power in an ever shrinking system footprint. This has enabled among others the wealth of nomadic battery powered wireless systems (smart phones, mp3 players, GPS, …) that society currently enjoys. Emerging integration technologies enabling even smaller volumes and the associated increased functional density may bring about a new revolution in systems targeting wearable healthcare, wellness, lifestyle and industrial monitoring applications
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