11 research outputs found

    CIRCUITS AND ARCHITECTURE FOR BIO-INSPIRED AI ACCELERATORS

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    Technological advances in microelectronics envisioned through Moore’s law have led to powerful processors that can handle complex and computationally intensive tasks. Nonetheless, these advancements through technology scaling have come at an unfavorable cost of significantly larger power consumption, which has posed challenges for data processing centers and computers at scale. Moreover, with the emergence of mobile computing platforms constrained by power and bandwidth for distributed computing, the necessity for more energy-efficient scalable local processing has become more significant. Unconventional Compute-in-Memory architectures such as the analog winner-takes-all associative-memory and the Charge-Injection Device processor have been proposed as alternatives. Unconventional charge-based computation has been employed for neural network accelerators in the past, where impressive energy efficiency per operation has been attained in 1-bit vector-vector multiplications, and in recent work, multi-bit vector-vector multiplications. In the latter, computation was carried out by counting quanta of charge at the thermal noise limit, using packets of about 1000 electrons. These systems are neither analog nor digital in the traditional sense but employ mixed-signal circuits to count the packets of charge and hence we call them Quasi-Digital. By amortizing the energy costs of the mixed-signal encoding/decoding over compute-vectors with many elements, high energy efficiencies can be achieved. In this dissertation, I present a design framework for AI accelerators using scalable compute-in-memory architectures. On the device level, two primitive elements are designed and characterized as target computational technologies: (i) a multilevel non-volatile cell and (ii) a pseudo Dynamic Random-Access Memory (pseudo-DRAM) bit-cell. At the level of circuit description, compute-in-memory crossbars and mixed-signal circuits were designed, allowing seamless connectivity to digital controllers. At the level of data representation, both binary and stochastic-unary coding are used to compute Vector-Vector Multiplications (VMMs) at the array level. Finally, on the architectural level, two AI accelerator for data-center processing and edge computing are discussed. Both designs are scalable multi-core Systems-on-Chip (SoCs), where vector-processor arrays are tiled on a 2-layer Network-on-Chip (NoC), enabling neighbor communication and flexible compute vs. memory trade-off. General purpose Arm/RISCV co-processors provide adequate bootstrapping and system-housekeeping and a high-speed interface fabric facilitates Input/Output to main memory

    High-Performance and Low-Power Magnetic Material Memory Based Cache Design

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    Magnetic memory technologies are very promising candidates to be universal memory due to its good scalability, zero standby power and radiation hardness. Having a cell area much smaller than SRAM, magnetic memory can be used to construct much larger cache with the same die footprint, leading to siginficant improvement of overall system performance and power consumption especially in this multi-core era. However, magnetic memories have their own drawbacks such as slow write, read disturbance and scaling limitation, making its usage as caches challenging. This dissertation comprehensively studied these two most popular magnetic memory technologies. Design exploration and optimization for the cache design from different design layers including the memory devices, peripheral circuit, memory array structure and micro-architecture are presented. By leveraging device features, two major micro-architectures -multi-retention cache hierarchy and process-variation-aware cache are presented to improve the write performance of STT-RAM. The enhancement in write performance results in the degradation of read operations, in terms of both speed and data reliability. This dissertation also presents an architecture to resolve STT-RAM read disturbance issue. Furthermore, the scaling of STT-RAM is hindered due to the required size of switching transistor. To break the cell area limitation of STT-RAM, racetrack memory is studied to achieve an even higher memory density and better performance and lower energy consumption. With dedicated elaboration, racetrack memory based cache design can achieve a siginificant area reduction and energy saving when compared to optimized STT-RAM

    Low Power Memory/Memristor Devices and Systems

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    This reprint focusses on achieving low-power computation using memristive devices. The topic was designed as a convenient reference point: it contains a mix of techniques starting from the fundamental manufacturing of memristive devices all the way to applications such as physically unclonable functions, and also covers perspectives on, e.g., in-memory computing, which is inextricably linked with emerging memory devices such as memristors. Finally, the reprint contains a few articles representing how other communities (from typical CMOS design to photonics) are fighting on their own fronts in the quest towards low-power computation, as a comparison with the memristor literature. We hope that readers will enjoy discovering the articles within

    Adiabatic quasi 6T-SRAM with shared writing and reading ports

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    Research & Technology Report Goddard Space Flight Center

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    The main theme of this edition of the annual Research and Technology Report is Mission Operations and Data Systems. Shifting from centralized to distributed mission operations, and from human interactive operations to highly automated operations is reported. The following aspects are addressed: Mission planning and operations; TDRSS, Positioning Systems, and orbit determination; hardware and software associated with Ground System and Networks; data processing and analysis; and World Wide Web. Flight projects are described along with the achievements in space sciences and earth sciences. Spacecraft subsystems, cryogenic developments, and new tools and capabilities are also discussed

    Predicting power scalability in a reconfigurable platform

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    This thesis focuses on the evolution of digital hardware systems. A reconfigurable platform is proposed and analysed based on thin-body, fully-depleted silicon-on-insulator Schottky-barrier transistors with metal gates and silicide source/drain (TBFDSBSOI). These offer the potential for simplified processing that will allow them to reach ultimate nanoscale gate dimensions. Technology CAD was used to show that the threshold voltage in TBFDSBSOI devices will be controllable by gate potentials that scale down with the channel dimensions while remaining within appropriate gate reliability limits. SPICE simulations determined that the magnitude of the threshold shift predicted by TCAD software would be sufficient to control the logic configuration of a simple, regular array of these TBFDSBSOI transistors as well as to constrain its overall subthreshold power growth. Using these devices, a reconfigurable platform is proposed based on a regular 6-input, 6-output NOR LUT block in which the logic and configuration functions of the array are mapped onto separate gates of the double-gate device. A new analytic model of the relationship between power (P), area (A) and performance (T) has been developed based on a simple VLSI complexity metric of the form ATσ = constant. As σ defines the performance “return” gained as a result of an increase in area, it also represents a bound on the architectural options available in power-scalable digital systems. This analytic model was used to determine that simple computing functions mapped to the reconfigurable platform will exhibit continuous power-area-performance scaling behavior. A number of simple arithmetic circuits were mapped to the array and their delay and subthreshold leakage analysed over a representative range of supply and threshold voltages, thus determining a worse-case range for the device/circuit-level parameters of the model. Finally, an architectural simulation was built in VHDL-AMS. The frequency scaling described by σ, combined with the device/circuit-level parameters predicts the overall power and performance scaling of parallel architectures mapped to the array

    GSI Scientific Report 2011 [GSI Report 2012-1]

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    GSI Scientific Report 2013

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    GSI Scientific Report 2007 [GSI Report 2008-1]

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    GSI Scientific Report 2006 [GSI Report 2007-1]

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