Compact modeling of gate tunneling leakage current in advanced nanoscale soi mosfets

En esta tesis se han desarrollado modelos compactos de corriente de fuga por túnel de puerta en SOI MOSFET (de simple y doble puerta) avanzados basados en una aproximación WKB de la probabilidad de túnel. Se han estudiado los materiales dieléctricos high-k más prometedores para los diferentes requisitos de nodos tecnológicos de acuerdo ala hoja de ruta ITRS de miniaturización de dispositivos electrónicos. Hemos presentado un modelo compacto de particionamiento de la corriente de fuga de puerta para un MOSFET nanométrico de doble puerta (DG MOSFET), utilizando modelos analíticos de la corriente de fuga por el túnel directo de puerta. Se desarrollaron también Los modelos analíticos dependientes de la temperatura de la corriente de túnel en la región de inversión y de la corriente túnel asistido por trampas en régimen subumbral. Finalmente, se desarrolló una técnica de extracción automática de parámetros de nuestro modelo compacto en DG MOSFET incluyendo efectos de canal corto. La corriente de la puerta por túnel directo y asistido por trampas modelada mediante los parámetros extraídos se verificó exitosamente mediante comparación con medidas experimentales

The interrelation of process techniques and space radiation effects in metal-insulator-semiconductor structures Final report, 21 Apr. 1966 - 31 Jul. 1967

Interrelation of process techniques and space radiation effects in metal oxide semiconductor

Crystal growth of device quality GaAs in space

The apparatus and techniques used in effort to determine the relationships between crystal growth and electronic properties are described with emphasis on electroepitaxy and melt-grown gallium aresenide crystal. Applications of deep level transient spectroscopy, derivative photocapitance spectroscopy, and SEM-cathodoluminescene in characterizing wide bandgap semiconductors; determining photoionization in MOS, Schottky barriers, and p-n junctions; and for identifying inhomogeneities are examined, as well as the compensation of indium phosphide

PtSi Clustering In Silicon Probed by Transport Spectroscopy

Metal silicides formed by means of thermal annealing processes are employed as contact materials in microelectronics. Control of the structure of silicide/silicon interfaces becomes a critical issue when the device characteristic size is reduced below a few tens of nanometers. Here we report on silicide clustering occurring within the channel of PtSi/Si/PtSi Schottky barrier transistors. This phenomenon is investigated through atomistic simulations and low-temperature resonant tunneling spectroscopy. Our results provide evidence for the segregation of a PtSi cluster with a diameter of a few nanometers from the silicide contact. The cluster acts as metallic quantum dot giving rise to distinct signatures of quantum transport through its discrete energy states

Studies of silicon pn junction solar cells

Modifications of the basic Shockley equations that result from the random and nonrandom spatial variations of the chemical composition of a semiconductor were developed. These modifications underlie the existence of the extensive emitter recombination current that limits the voltage over the open circuit of solar cells. The measurement of parameters, series resistance and the base diffusion length is discussed. Two methods are presented for establishing the energy bandgap narrowing in the heavily-doped emitter region. Corrections that can be important in the application of one of these methods to small test cells are examined. Oxide-charge-induced high-low-junction emitter (OCI-HLE) test cells which exhibit considerably higher voltage over the open circuit than was previously seen in n-on-p solar cells are described

Influence of cases on the electrical properties of mis devices

This thesis studies the effects of gas ambients on the electrical properties of the insulator-semiconductor interface of a MIS capacitor. A microcomputer-controlled instrumentation system has been developed to extract this information from measurement of the a.c. admittance of MOS or MIS devices. The system incorporates several novel developments in circuitry and software which enable these admittance data to be automatically collected and processed in the frequency domain by remote recalibration of the instrumentation. This advancement permits interface state density information to be calculated more quickly and accurately than has been previously possible using manually-operated equipment. The system has been used to investigate the influence of gases on the density of interface states in a MIS capacitor, in particular the palladium/silicon dioxide/silicon structure which is sensitive to hydrogen gas. A distinct change in the distribution of surface state density across the silicon bandgap has been observed upon exposure to a hydrogen ambient. An alternative insulating layer, an organic Langmuir-Blodgett film multilayer of ω-tricosenoic acid, has been characterised and examined, and increased sensitivity of this structure to hydrogen gas has been indicated