744 research outputs found

    Systematics of molecular self-assembled networks at topological insulators surfaces

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    The success of topological insulators (TI) in creating devices with unique functionalities is directly connected to the ability of coupling their helical spin states to well defined perturbations. However, up to now, TI-based heterostructures always resulted in very disordered interfaces, characterized by strong mesoscopic fluctuations of the chemical potential which make the spin-momentum locking ill-defined over length scales of few nanometers or even completely destroy topological states. These limitations call for the ability to control topological interfaces with atomic precision. Here, we demonstrate that molecular self-assembly processes driven by inherent interactions among the constituents offer the opportunity to create well-defined networks at TIs surfaces. Even more remarkably, we show that the symmetry of the overlayer can be finely controlled by appropriate chemical modifications. By analyzing the influence of the molecules on the TI electronic properties, we rationalize our results in terms of the charge redistribution taking place at the interface. Overall, our approach offers a precise and fast way to produce tailor-made nanoscale surface landscapes. In particular, our findings make organic materials ideal TIs counterparts, since they offer the possibility to chemically tune both electronic and magnetic properties within the same family of molecules, thereby bringing us a significant step closer towards an application of this fascinating class of materials.Comment: Nano Letters (2015

    Unoccupied topological surface state in Bi2_{2}Te2_{2}Se

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    Bias voltage dependent scattering of the topological surface state is studied by scanning tunneling microscopy/spectroscopy for a clean surface of the topological insulator Bi2_2Te2_2Se. A strong warping of constant energy contours in the unoccupied part of the spectrum is found to lead to a spin-selective scattering. The topological surface state persists to higher energies in the unoccupied range far beyond the Dirac point, where it coexists with the bulk conduction band. This finding sheds light on the spin and charge dynamics over the wide energy range and opens a way to designing opto-spintronic devices.Comment: 5 pages, 4 figure

    Development of laboratory information management system

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    Results of the actual direction of work of Scientific Research Institute of HV on development of the program complex LIS/LIMS «Chemist - analysts» for automatization of activity of analytical laboratories are presented. Functions of the complex and methodological principles of its development are considered, comparison with foreign analogues is carried out. The model of the industrial analytical control with use of concepts of a life cycle of a laboratory, technique and test is described

    The fundamental parameters of the roAp star γ\gamma Equulei

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    Physical processes working in the stellar interiors as well as the evolution of stars depend on some fundamental stellar properties, such as mass, radius, luminosity, and chemical abundances. A classical way to test stellar interior models is to compare the predicted and observed location of a star on theoretical evolutionary tracks in a H-R diagram. This requires the best possible determinations of stellar mass, radius, luminosity and abundances. To derive its fundamental parameters, we observed the well-known rapidly oscillating Ap star, γ\gamma Equ, using the visible spectro-interferometer VEGA installed on the optical CHARA array. We computed the calibrated squared visibility and derived the limb-darkened diameter. We used the whole energy flux distribution, the parallax and this angular diameter to determine the luminosity and the effective temperature of the star. We obtained a limb-darkened angular diameter of 0.564~±\pm~0.017~mas and deduced a radius of RR~=~2.20~±\pm~0.12~R{\rm R_{\odot}}. Without considering the multiple nature of the system, we derived a bolometric flux of (3.12±0.21)×107(3.12\pm 0.21)\times 10^{-7} erg~cm2^{-2}~s1^{-1} and an effective temperature of 7364~±\pm~235~K, which is below the effective temperature that has been previously determined. Under the same conditions we found a luminosity of LL~=~12.8~±\pm~1.4~L{\rm L_{\odot}}. When the contribution of the closest companion to the bolometric flux is considered, we found that the effective temperature and luminosity of the primary star can be, respectively, up to \sim~100~K and up to \sim~0.8~L_\odot smaller than the values mentioned above.These new values of the radius and effective temperature should bring further constraints on the asteroseismic modelling of the star.Comment: Accepted by A&

    Role of oxygen and fluorine in passivation of the GaSb(111) surface depending on its termination

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    The mechanism of the chemical bonding of oxygen and fluorine on the GaSb(111) surface depending on its termination is studied by the projector augmented-waves method within density functional theory. It is shown that on an unreconstructed (111) surface with a cation termination, the adsorption of fluorine leads to the removal of surface states from the band gap. The binding energy of fluorine on the cation-terminated surface in the most preferable Ga-T position is lower by ~0.4 eV than that of oxygen, but it is significantly lower (by ~0.8 eV) on the anion-terminated surface. We demonstrate that the mechanism of chemical bonding of electronegative adsorbates with the surface has an ionic–covalent character. The covalence of the O–Sb bond is higher than the F–Sb one, and it is higher than both O–Ga and F–Ga bonds. Trends in the change in the electronic structure of the GaSb(111) surface upon adsorption of fluorine and oxygen are discussed. It is found that an increase in the oxygen concentration on the Sb-terminated GaSb(111) surface promotes a decrease in the density of surface states in the band gap

    Investigation of the Ga-rich GaAs(001) Surface Reconstructions Stability and Interaction with Halogens

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    Atomic and electronic structures for a number of GaAs(001) surface geometries were studied within the density functional theory in order to re-examine the energy stability of surface reconstructions in the Ga-rich limit. It was shown that among geometries with (42) symmetry so-called ζ-model is most stable but the energetically favored Ga-rich (24) reconstructions are stabilized by dimerized Ga and As atoms. Our calculations predict the coexistence of (24) and (44) reconstructions on GaAs(001) in the Ga-rich limit. Comparative study of the halogens (F, Cl, I) adsorption on the -GaAs(001)-(42) surface were performed. The energetically preferable positions for all considered halogens are found on-top sites above dimerized and nondimerized Ga atoms. The electronic properties of the semiconductor surface and its change upon halogen adsorption are discussed. It was shown that the interaction of halogen with the Ga dimerized at-oms leads to the weakening of the chemical bonds between surface atoms that determines the initial stage of surface etching. When you are citing the document, use the following link http://essuir.sumdu.edu.ua/handle/123456789/3531

    Universal response of the type-II Weyl semimetals phase diagram

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    The discovery of Weyl semimetals represents a significant advance in topological band theory. They paradigmatically enlarged the classification of topological materials to gapless systems while simultaneously providing experimental evidence for the long-sought Weyl fermions. Beyond fundamental relevance, their high mobility, strong magnetoresistance, and the possible existence of even more exotic effects, such as the chiral anomaly, make Weyl semimetals a promising platform to develop radically new technology. Fully exploiting their potential requires going beyond the mere identification of materials and calls for a detailed characterization of their functional response, which is severely complicated by the coexistence of surface- and bulk-derived topologically protected quasiparticles, i.e., Fermi arcs and Weyl points, respectively. Here, we focus on the type-II Weyl semimetal class where we find a stoichiometry-dependent phase transition from a trivial to a non-trivial regime. By exploring the two extreme cases of the phase diagram, we demonstrate the existence of a universal response of both surface and bulk states to perturbations. We show that quasi-particle interference patterns originate from scattering events among surface arcs. Analysis reveals that topologically non-trivial contributions are strongly suppressed by spin texture. We also show that scattering at localized impurities generate defect-induced quasiparticles sitting close to the Weyl point energy. These give rise to strong peaks in the local density of states, which lift the Weyl node significantly altering the pristine low-energy Weyl spectrum. Visualizing the microscopic response to scattering has important consequences for understanding the unusual transport properties of this class of materials. Overall, our observations provide a unifying picture of the Weyl phase diagram
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