29,308 research outputs found

    Investigating reciprocity failure in 1.7-micron cut-off HgCdTe detectors

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    Flux dependent non-linearity (reciprocity failure) in HgCdTe NIR detectors with 1.7 micron cut-off was investigated. A dedicated test station was designed and built to measure reciprocity failure over the full dynamic range of near infrared detectors. For flux levels between 1 and 100,000 photons/sec a limiting sensitivity to reciprocity failure of 0.3%/decade was achieved. First measurements on several engineering grade 1.7 micron cut-off HgCdTe detectors show a wide range of reciprocity failure, from less than 0.5%/decade to about 10%/decade. For at least two of the tested detectors, significant spatial variation in the effect was observed. No indication for wavelength dependency was found. The origin of reciprocity failure is currently not well understood. In this paper we present details of our experimental set-up and show the results of measurements for several detectors.Comment: 11 pages, 10 figures, to appear in " Astronomical Telescopes and Instrumentation: High Energy, Optical, and Infrared Detectors for Astronomy IV", Proceedings of SPIE Vol. 774

    On evolution of CMOS image sensors

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    CMOS Image Sensors have become the principal technology in majority of digital cameras. They started replacing the film and Charge Coupled Devices in the last decade with the promise of lower cost, lower power requirement, higher integration and the potential of focal plane processing. However, the principal factor behind their success has been the ability to utilise the shrinkage in CMOS technology to make smaller pixels, and thereby have more resolution without increasing the cost. With the market of image sensors exploding courtesy their inte- gration with communication and computation devices, technology developers improved the CMOS processes to have better optical performance. Nevertheless, the promises of focal plane processing as well as on-chip integration have not been fulfilled. The market is still being pushed by the desire of having higher number of pixels and better image quality, however, differentiation is being difficult for any image sensor manufacturer. In the paper, we will explore potential disruptive growth directions for CMOS Image sensors and ways to achieve the same

    Optimizing floating guard ring designs for FASPAX N-in-P silicon sensors

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    FASPAX (Fermi-Argonne Semiconducting Pixel Array X-ray detector) is being developed as a fast integrating area detector with wide dynamic range for time resolved applications at the upgraded Advanced Photon Source (APS.) A burst mode detector with intended \mbox{13 MHz} image rate, FASPAX will also incorporate a novel integration circuit to achieve wide dynamic range, from single photon sensitivity to 10510^{\text{5}} x-rays/pixel/pulse. To achieve these ambitious goals, a novel silicon sensor design is required. This paper will detail early design of the FASPAX sensor. Results from TCAD optimization studies, and characterization of prototype sensors will be presented.Comment: IEEE NSS-MIC 2015 Conference recor

    Photosensor Characterization for the Cherenkov Telescope Array: Silicon Photomultiplier versus Multi-Anode Photomultiplier Tube

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    Photomultiplier tube technology has been the photodetector of choice for the technique of imaging atmospheric Cherenkov telescopes since its birth more than 50 years ago. Recently, new types of photosensors are being contemplated for the next generation Cherenkov Telescope Array. It is envisioned that the array will be partly composed of telescopes using a Schwarzschild-Couder two mirror design never built before which has significantly improved optics. The camera of this novel optical design has a small plate scale which enables the use of compact photosensors. We present an extensive and detailed study of the two most promising devices being considered for this telescope design: the silicon photomultiplier and the multi-anode photomultiplier tube. We evaluated their most critical performance characteristics for imaging gamma-ray showers, and we present our results in a cohesive manner to clearly evaluate the advantages and disadvantages that both types of device have to offer in the context of GeV-TeV gamma-ray astronomy.Comment: submitted to SPIE Optics+Photonics proceeding

    High dynamic range perception with spatially variant exposure

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    In this paper we present a method capable of perceiving high dynamic range scene. The special feature of the method is that it changes the integration time of the imager on the pixel level. Using CNN-UM we can calculate the integration time for the pixels, and hence low dynamic range integration type CMOS sensors will be able to perceive high dynamic range scenes. The method yields high contrast without introducing non-existing edges

    Neuronal imaging with ultrahigh dynamic range multiphoton microscopy

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    Multiphoton microscopes are hampered by limited dynamic range, preventing weak sample features from being detected in the presence of strong features, or preventing the capture of unpredictable bursts in sample strength. We present a digital electronic add-on technique that vastly improves the dynamic range of a multiphoton microscope while limiting potential photodamage. The add-on provides real-time negative feedback to regulate the laser power delivered to the sample, and a log representation of the sample strength to accommodate ultrahigh dynamic range without loss of information. No microscope hardware modifications are required, making the technique readily compatible with commercial instruments. Benefits are shown in both structural and in-vivo functional mouse brain imaging applications.R21 EY027549 - NEI NIH HH
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