Quantized circular photogalvanic effect in Weyl semimetals

The circular photogalvanic effect (CPGE) is the part of a photocurrent that switches depending on the sense of circular polarization of the incident light. It has been consistently observed in systems without inversion symmetry and depends on non-universal material details. Here we find that in a class of Weyl semimetals (e.g. SrSi$_2$) and three-dimensional Rashba materials (e.g. doped Te) without inversion and mirror symmetries, the injection contribution to the CPGE trace is effectively quantized in terms of the fundamental constants $e, h, c$ and $\epsilon_0$ with no material-dependent parameters. This is so because the CPGE directly measures the topological charge of Weyl points, and non-quantized corrections from disorder and additional bands can be small over a significant range of incident frequencies. Moreover, the magnitude of the CPGE induced by a Weyl node is relatively large, which enables the direct detection of the monopole charge with current techniques.Comment: 4+5 pages, 3 figures, published versio

Universal Rashba Spin Precession of Two-Dimensional Electrons and Holes

We study spin precession due to Rashba spin splitting of electrons and holes in semiconductor quantum wells. Based on a simple analytical expression that we derive for the current modulation in a broad class of experimental situations of ferromagnet/nonmagnetic semiconductor/ferromagnet hybrid structures, we conclude that the Datta-Das spin transistor (i) is feasible with holes and (ii) its functionality is not affected by integration over injection angles. The current modulation shows a universal oscillation period, irrespective of the different forms of the Rashba Hamiltonian for electrons and holes. The analytic formulas approximate extremely well exact numerical calculations of a more elaborate Kohn--Luttinger model.Comment: 7 pages, 2 eps figures included, minor change

Energy relaxation dynamics and universal scaling laws in organic light emitting diodes

Electron-hole (e-h) capture in luminescent conjugated polymers (LCPs) is modeled by the dissipative dynamics of a multilevel electronic system coupled to a phonon bath. Electroinjected e-h pairs are simulated by a mixed quantum state, which relaxes via phonon-driven internal conversions to low-lying charge-transfer (CT) and excitonic (XT) states. The underlying two-band polymer model reflects PPV and spans monoexcited configuration interaction singlets (S) and triplets (T), coupled to Franck-Condon active C=C stretches and ring-torsions. Focusing entirely upon long PPV chains, we consider the recombination kinetics of an initially separated CT pair. Our model calculations indicated that S and T recombination proceeds according to a branched, two-step mechanism dictated by near e-h symmetry. The initial relaxation occurs rapidly with nearly half of the population going into excitons ($S_{XT}$ or $T_{XT}$), while the remaining portion remains locked in metastable CT states. While formation rates of $S_{CT}$ and $T_{CT}$ are nearly equal, $S_{XT}$ is formed about twice as fast $T_{XT}$ in concurrence with experimental observations of these systems. Furthermore, breaking e-h symmetry suppresses the XT to CT branching ratio for triplets and opens a slow CT$\to$ XT conversion channel exclusively for singlets due to dipole-dipole interactions between geminate and non-geminate configurations. Finally, our calculations yield a remarkable linear relation between chain length and singlet/triplet branching ratio which can be explained in terms of the binding energies of the respective final excitonic states and the scaling of singlet-triplet energy gap with chain length.Comment: For IJQC-Sanibel Quantum Chemistry Symposium, 200

Truncated Levy statistics for transport in disordered semiconductors

Probabilistic interpretation of transition from the dispersive transport regime to the quasi-Gaussian one in disordered semiconductors is given in terms of truncated Levy distributions. Corresponding transport equations with fractional order derivatives are derived. We discuss physical causes leading to truncated waiting time distributions in the process and describe influence of truncation on carrier packet form, transient current curves and frequency dependence of conductivity. Theoretical results are in a good agreement with experimental facts.Comment: 6 pages, 4 figures, presented in "Nonlinear Science and Complexity - 2010" (Turkey, Ankara