Saw-Less radio receivers in CMOS

Smartphones play an essential role in our daily life. Connected to the internet, we can easily keep in touch with family and friends, even if far away, while ever more apps serve us in numerous ways. To support all of this, higher data rates are needed for ever more wireless users, leading to a very crowded radio frequency spectrum. To achieve high spectrum efficiency while reducing unwanted interference, high-quality band-pass filters are needed. Piezo-electrical Surface Acoustic Wave (SAW) filters are conventionally used for this purpose, but such filters need a dedicated design for each new band, are relatively bulky and also costly compared to integrated circuit chips. Instead, we would like to integrate the filters as part of the entire wireless transceiver with digital smartphone hardware on CMOS chips. The research described in this thesis targets this goal. It has recently been shown that N-path filters based on passive switched-RC circuits can realize high-quality band-select filters on CMOS chips, where the center frequency of the filter is widely tunable by the switching-frequency. As CMOS downscaling following Moore’s law brings us lower clock-switching power, lower switch on-resistance and more compact metal-to-metal capacitors, N-path filters look promising. This thesis targets SAW-less wireless receiver design, exploiting N-path filters. As SAW-filters are extremely linear and selective, it is very challenging to approximate this performance with CMOS N-path filters. The research in this thesis proposes and explores several techniques for extending the linearity and enhancing the selectivity of N-path switched-RC filters and mixers, and explores their application in CMOS receiver chip designs. First the state-of-the-art in N-path filters and mixer-first receivers is reviewed. The requirements on the main receiver path are examined in case SAW-filters are removed or replaced by wideband circulators. The feasibility of a SAW-less Frequency Division Duplex (FDD) radio receiver is explored, targeting extreme linearity and compression Irequirements. A bottom-plate mixing technique with switch sharing is proposed. It improves linearity by keeping both the gate-source and gate-drain voltage swing of the MOSFET-switches rather constant, while halving the switch resistance to reduce voltage swings. A new N-path switch-RC filter stage with floating capacitors and bottom-plate mixer-switches is proposed to achieve very high linearity and a second-order voltage-domain RF-bandpass filter around the LO frequency. Extra out-of-band (OOB) rejection is implemented combined with V-I conversion and zero-IF frequency down-conversion in a second cross-coupled switch-RC N-path stage. It offers a low-ohmic high-linearity current path for out-of-band interferers. A prototype chip fabricated in a 28 nm CMOS technology achieves an in-band IIP3 of +10 dBm , IIP2 of +42 dBm, out-of-band IIP3 of +44 dBm, IIP2 of +90 dBm and blocker 1-dB gain-compression point of +13 dBm for a blocker frequency offset of 80 MHz. At this offset frequency, the measured desensitization is only 0.6 dB for a 0-dBm blocker, and 3.5 dB for a 10-dBm blocker at 0.7 GHz operating frequency (i.e. 6 and 9 dB blocker noise figure). The chip consumes 38-96 mW for operating frequencies of 0.1-2 GHz and occupies an active area of 0.49 mm2. Next, targeting to cover all frequency bands up to 6 GHz and achieving a noise figure lower than 3 dB, a mixer-first receiver with enhanced selectivity and high dynamic range is proposed. Capacitive negative feedback across the baseband amplifier serves as a blocker bypassing path, while an extra capacitive positive feedback path offers further blocker rejection. This combination of feedback paths synthesizes a complex pole pair at the input of the baseband amplifier, which is up-converted to the RF port to obtain steeper RF-bandpass filter roll-off than the conventional up-converted real pole and reduced distortion. This thesis explains the circuit principle and analyzes receiver performance. A prototype chip fabricated in 45 nm Partially Depleted Silicon on Insulator (PDSOI) technology achieves high linearity (in-band IIP3 of +3 dBm, IIP2 of +56 dBm, out-of-band IIP3 = +39 dBm, IIP2 = +88 dB) combined with sub-3 dB noise figure. Desensitization due to a 0-dBm blocker is only 2.2 dB at 1.4 GHz operating frequency. IIFinally, to demonstrate the performance of the implemented blocker-tolerant receiver chip designs, a test setup with a real mobile phone is built to verify the sensitivity of the receiver chip for different practical blocking scenarios

Discrete-Time Mixing Receiver Architecture for RF-Sampling Software-Defined Radio

A discrete-time (DT) mixing architecture for RF-sampling receivers is presented. This architecture makes RF sampling more suitable for software-defined radio (SDR) as it achieves wideband quadrature demodulation and wideband harmonic rejection. The paper consists of two parts. In the first part, different downconversion techniques are classified and compared, leading to the definition of a DT mixing concept. The suitability of CT-mixing and RF-sampling receivers to SDR is also discussed. In the second part, we elaborate the DT-mixing architecture, which can be realized by de-multiplexing. Simulation shows a wideband 90° phase shift between I and Q outputs without systematic channel bandwidth limitation. Oversampling and harmonic rejection relaxes RF pre-filtering and reduces noise and interference folding. A proof-of-concept DT-mixing downconverter has been built in 65 nm CMOS, for 0.2 to 0.9 GHz RF band employing 8-times oversampling. It can reject 2nd to 6th harmonics by 40 dB typically and without systematic channel bandwidth limitation. Without an LNA, it achieves a gain of -0.5 to 2.5 dB, a DSB noise figure of 18 to 20 dB, an IIP3 = +10 dBm, and an IIP2 = +53 dBm, while consuming less than 19 mW including multiphase clock generation

Analog FIR Filter Used for Range-Optimal Pulsed Radar Applications

Matched filter is one of the most critical block in radar applications. With different measured range and relative velocity of a target we will need different bandwidth of the matched filter to maximize the radar signal to noise ratio (SNR). Conventional matched filter designs incorporate surface acoustic wave (SAW) filters. However, it is not inherently tunable and will need multiple SAW filters with to change the bandwidth resulting in costly solutions. In this work, a novel method of implementing the matched filter with an analog FIR filter is proposed. The FIR filter provides a linear phase response which is suitable for radar applications. Analog FIR filters can be implemented in the discrete domain, requiring operational amplifiers, switches and capacitors. In this work, the FIR filter is implemented using a highly programmable operational transconductance amplifier with tunable transconductance gain. The operational amplifiers designed for the filter uses a fully differential source degeneration topology to increase the linearity; also capacitive degeneration was placed to compensate its high frequency response. An active continuous-time common mode feedback (CMFB) circuit is also presented. This circuit presents a much smaller load capacitance to the output of the amplifier, yielding a higher frequency response. To satisfy system specifications a 128-tap FIR system is implemented, which require over 128 amplifiers, 136 unity capacitors of 1pF each and 4760 switches. The functionality of the proposed architecture has been verified through schematic and behavior model simulations. In the simulation, the robustness of the FIR filter to process and temperature variation is also verified. The circuits were designed in the TowerJazz 180nm CMOS technology and fabricated on November 2013

縦型ボディチャネルMOS Field-Effect Transistorを用いたマイクロプロセッサ向け高効率・高集積DC-DCコンバータとそのパワーマネジメントに関する研究

Tohoku University遠藤哲郎課

A wide dynamic range high-q high-frequency bandpass filter with an automatic quality factor tuning scheme

An 80 MHz bandpass filter with a tunable quality factor of 16∼44 using an improved transconductor circuit is presented. A noise optimized biquad structure for high-Q, high- frequency bandpass filter is proposed. The quality factor of the filter is tuned using a new quality factor locked loop algorithm. It was shown that a second-order quality factor locked loop is necessary and sufficient to tune the quality factor of a bandpass filter with zero steady state error. The accuracy, mismatch, and sensitivty analysis of the new tuning scheme was performed and analyzed. Based on the proposed noise optimized filter structure and new quality factor tuning scheme, a biquad filter was designed and fabricated in 0.25 μm BiCMOS process. The measured results show that the biquad filter achieves a SNR of 45 dB at IMD of 40 dB. The P-1dB compression point and IIP3 of the filter are -10 dBm and -2.68 dBm, respectively. The proposed biquad filter and quality factor tuning scheme consumes 58mW and 13 mW of power at 3.3 V supply.Ph.D.Committee Chair: Allen Phillip; Committee Member: Hasler Paul; Committee Member: Keezer David; Committee Member: Kenny James; Committee Member: Pan Ronghu

A 300-800MHz Tunable Filter and Linearized LNA applied in a Low-Noise Harmonic-Rejection RF-Sampling Receiver

A multiband flexible RF-sampling receiver aimed at software-defined radio is presented. The wideband RF sampling function is enabled by a recently proposed discrete-time mixing downconverter. This work exploits a voltage-sensing LNA preceded by a tunable LC pre-filter with one external coil to demonstrate an RF-sampling receiver with low noise figure (NF) and high harmonic rejection (HR). The second-order LC filter provides voltage pre-gain and attenuates the source noise aliasing, and it also improves the HR ratio of the sampling downconverter. The LNA consists of a simple amplifier topology built from inverters and resistors to improve the third-order nonlinearity via an enhanced voltage mirror technique. The RF-sampling receiver employs 8 times oversampling covering 300 to 800 MHz in two RF sub-bands. The chip is realized in 65 nm CMOS and the measured gain across the band is between 22 and 28 dB, while achieving a NF between 0.8 to 4.3 dB. The IIP2 varies between +38 and +49 dBm and the IIP3 between -14 dBm and -9 dBm, and the third and fifth order HR ratios are more than 60 dB. The LNA and downconverter consumes 6 mW, and the clock generator takes 12 mW at 800 MHz RF.\ud \u

Digitally-Modulated Transmitter for Wireless Communications

With the increased digital processing capabilities of sub-micron CMOS nodes, pushing the digital world towards the antenna is becoming attractive, enabling higher reconfigurability of the transmitter, therefore, more degrees of freedom to end-users. More specifically, by adopting an RF-DAC (DAC working at RF frequency) instead of the traditional Power Amplifier block allows for increased performance of the whole transmitter. Hence, a polar transmitter is being studied and an implementation in 130 nm CMOS node is expected

Polyphase filter with parametric tuning

Tese de mestrado integrado. Engenharia Electrotécnica e de Computadores. Faculdade de Engenharia. Universidade do Porto. 201