Relativistic Landau resonances

The possible interactions between plasma waves and relativistic charged particles are considered. An electromagnetic perturbation in the plasma is formulated as an elliptically polarized wave, and the collisionless plasma is described by a distribution in phase space, which is realized in cylindrical coordinates. The linearized Vlasov equation is solved in the semi-relativistic limit, to obtain the distribution function in the rest frame of the observer. The perturbed currents supported by the ionized medium are then calculated, so that an expression can be written for the total amount of energy available for transfer through the Landau mechanism. It is found that only certain modes of the perturbed current are available for this energy transfer. The final expressions are presented in terms of Stokes parameters, and applied to the special cases of a thermal as well as a nonthermal plasma. The thermal plasma is described by a Maxwellian distribution, while two nonthermal distributions are considered: the kappa distribution and a generalized Weibull distribution

Lifetime prediction for power converters

Renewable energy is developing rapidly and gaining more and more commercial viability. High reliability of the generation system is essential to maximize the output power. The power inverter is an important unit in this system and is believed to be one of the most unreliable parts. In the case of wind power generation, especially in off-shore wind, when the system reliability requirement is high, a technique to predict the inverter lifetime is invaluable as it would help the inverter designer optimize his design for minimal maintenance. Previous researchers studying inverter lifetime prediction, focus either at device level such as device fatigue damage models, or at system level which require experimental data for their selected device. This work presents a new method to estimate the inverter lifetime from a given mission profile within a reasonable simulation time. Such model can be used as a converter design tool or an on-line lifetime estimation tool after being configured to a real converter system. The key contribution of this work is to link the physics of the power devices to a large scale system simulation within a reasonable framework of time. With this technique, the system down time can be reduced and therefore more power can be generated. Also, the failure damage to the system is avoided which reduces the maintenance cost. A power cycling test is designed to gather the lifetime data of a selected IGBT module. Die-attach solder fatigue is found out to be the dominant failure mode of this IGBT module. The accuracy of widely accepted Miner’s rule, which accumulates damage linearly, is discussed and a nonlinear accumulation method is promoted to predict the lifetime of power inverters

Thermo-mechanical Durability Assessment and Microstructural Characterization of 95.5Pb2Sn2.5Ag High Temperature Solder

There is an increasing need in the avionics, military, oil exploration and automotive industries for high temperature solders that perform reliably in ever-higher temperature applications. In these applications, solders are often used as large area die attaches and due to the high power involved, they need to dissipate large amounts of heat that can further increase the thermal load on the devices. The mechanical, electrical and thermal behavior of the solder must be understood to ensure devices and package reliability. There is an especially urgent need for characterizing constitutive properties and thermo-mechanical durability of high temperature solders. A partitioned constitutive model consisting of elastic, plastic and creep models was obtained for the 95.5Pb2Sn2.5Ag solder by implementing the direct local measurement technique. The validity of the assumptions used to generate these models have been demonstrated using microstructural characterization. The thermo-mechanical durability of the 95.5Pb2Sn2.5Ag solder is investigated using thermal cycling tests and finite element modeling. A high reliability package manufacturing technique has been followed. The extensive detailed two-dimensional viscoplastic FE stress and damage analysis is conducted for five different thermal cycling tests of 95.5Pb2Sn2.5Ag solders. The energy-partitioning durability model of the solder is obtained. It is found that 95.5Pb2Sn2.5Ag solder is creep dominant at high temperatures. The microstructure characterization study on 95.5Pb2Sn2.5Ag solder reveals that it remains primarily a single phase in the range of temperature under study with very few Ag3Sn intermetallics. Fatigue cracks due to thermal cycling have been observed

Properties and behaviour of Pb-free solders in flip-chip scale solder interconnections

Due to pending legislations and market pressure, lead-free solders will replace Sn–Pb solders in 2006. Among the lead-free solders being studied, eutectic Sn–Ag, Sn–Cu and Sn–Ag–Cu are promising candidates and Sn–3.8Ag–0.7Cu could be the most appropriate replacement due to its overall balance of properties. In order to garner more understanding of lead-free solders and their application in flip-chip scale packages, the properties of lead free solders, including the wettability, intermetallic compound (IMC) growth and distribution, mechanical properties, reliability and corrosion resistance, were studied and are presented in this thesis. [Continues.

MICROELECTRONICS PACKAGING TECHNOLOGY ROADMAPS, ASSEMBLY RELIABILITY, AND PROGNOSTICS

This paper reviews the industry roadmaps on commercial-off-the shelf (COTS) microelectronics packaging technologies covering the current trends toward further reducing size and increasing functionality. Due tothe breadth of work being performed in this field, this paper presents only a number of key packaging technologies. The topics for each category were down-selected by reviewing reports of industry roadmaps including the International Technology Roadmap for Semiconductor (ITRS) and by surveying publications of the International Electronics Manufacturing Initiative (iNEMI) and the roadmap of association connecting electronics industry (IPC). The paper also summarizes the findings of numerous articles and websites that allotted to the emerging and trends in microelectronics packaging technologies. A brief discussion was presented on packaging hierarchy from die to package and to system levels. Key elements of reliability for packaging assemblies were presented followed by reliabilty definition from a probablistic failure perspective. An example was present for showing conventional reliability approach using Monte Carlo simulation results for a number of plastic ball grid array (PBGA). The simulation results were compared to experimental thermal cycle test data. Prognostic health monitoring (PHM) methods, a growing field for microelectronics packaging technologies, were briefly discussed. The artificial neural network (ANN), a data-driven PHM, was discussed in details. Finally, it presented inter- and extra-polations using ANN simulation for thermal cycle test data of PBGA and ceramic BGA (CBGA) assemblies

Evaluation, Optimization,and Reliability of No-flow Underfill Process

This research details the development of a novel process for four commercially available no-flow fluxing underfills for use with flip chip on FR4 substrates. The daisy chain test die was used such that two point resistance measurements could be used to determine the integrity of the solder interconnects post reflow. The impact of the underfill dispensing pattern on underfill void formation is determined in a full factorial dispense DOE that includes two factors: pattern and speed. Evaluation metrics include underfill material voiding and fillet shape. The impact of the placement process is determined in a second full factorial DOE involving three factors at two levels each: dispense pattern, placement force, and dwell time. Metrics include interconnect yield and underfill voiding. The results of these DOEs are used to select an optimal placement process for each material to be used for the remaining reflow experiments. The process developed is a novel approach to no-flow processing; the material is dispensed to the side of the bond site and allowed to flow under the chip after placement by capillary action during the early stages of reflow. This development allows for void free assemblies using no-flow materials. Reflow parameters are investigated using a parametric approach. The following parameters are varied at 2 levels individually off a baseline profile: Peak Temperature, Time > 183 oC, Peak Ramp Rate, Soak Time, and Soak Temperature. A ranking was developed for each material based on the observable metrics: interconnect yield, underfill material voiding, two point resistance, and a grain area fraction term. The results were used to select an optimal assembly process for each material. Test boards were assembled in replicates of 30 according to the optimal process for each material, and AATC -40 to 125 oC thermal cycling test was performed. The MTTF for these assemblies has exceeded 3000 cycles; the void free process successfully avoids premature failure due to solder extrusion into voids. Further process development work has demonstrated that the process is scalable to larger area array die and other edge dispense patterns have also been demonstrated to result in void free assemblies.M.S.Committee Chair: Daniel Baldwin; Committee Member: Steven Danyluk; Committee Member: Suresh Sitarama

Radiation Tolerant Electronics, Volume II

Research on radiation tolerant electronics has increased rapidly over the last few years, resulting in many interesting approaches to model radiation effects and design radiation hardened integrated circuits and embedded systems. This research is strongly driven by the growing need for radiation hardened electronics for space applications, high-energy physics experiments such as those on the large hadron collider at CERN, and many terrestrial nuclear applications, including nuclear energy and safety management. With the progressive scaling of integrated circuit technologies and the growing complexity of electronic systems, their ionizing radiation susceptibility has raised many exciting challenges, which are expected to drive research in the coming decade.After the success of the first Special Issue on Radiation Tolerant Electronics, the current Special Issue features thirteen articles highlighting recent breakthroughs in radiation tolerant integrated circuit design, fault tolerance in FPGAs, radiation effects in semiconductor materials and advanced IC technologies and modelling of radiation effects

Rapid Assessment of BGA Fatigue Life Under Vibration Loading

Ball Grid Array (BGA) packages are a relatively new package type and have rapidly become the package style of choice. Much high density, high I/O count semiconductor devices are now only offered in this package style. Designers are naturally concerned about the robustness of BGA packages in a vibration environment when their experience base is with products using more traditional compliant gull or J leaded surface mount packages. Because designers simply do not have the experience, tools are needed to assess the vibration fatigue life of BGA packages during early design stages and not have to wait for product qualification testing, or field returns, to determine if a problem exists. This dissertation emphasizes a rapid assessment methodology to determine fatigue life of BGA components. If time and money were not an issue, clearly one would use a general-purpose finite element program to determine the dynamic response of the printed wiring board in the vibration environment. Once the response of the board was determined, one would determine the location and value of the critical stress in the component of interest. Knowing the critical stress, one would estimate the fatigue life from a damage model. The time required building the FEA model, conducting the analysis, and post-process the results would take at least a few days to weeks. This is too time-consuming, except in the most critical applications. It is not a process that can be used in everyday design and what-if simulations. The rapid assessment approach proposed in this research focuses on a physics of failure type approach to damage analysis and involves global and local modeling to determine the critical stress in the component of interest. A fatigue damage model then estimates the life. Once implemented in software, i.e. the new version of CALCE_PWA, the entire fatigue life assessment is anticipated to be executed by an average engineer in real time and take only minutes to generate accurate results

STUDY OF RADIATION EFFECTS IN GAN-BASED DEVICES

Radiation tolerance of wide-bandgap Gallium Nitride (GaN) high-electron-mobility transistors (HEMT) has been studied, including X-ray-induced TID effects, heavy-ion-induced single event effects, and neutron-induced single event effects. Threshold voltage shift is observed in X-ray irradiation experiments, which recovers over time, indicating no permanent damage formed inside the device. Heavy-ion radiation effects in GaN HEMTs have been studied as a function of bias voltage, ion LET, radiation flux, and total fluence. A statistically significant amount of heavy-ion-induced gate dielectric degradation was observed, which consisted of hard breakdown and soft breakdown. Specific critical injection level experiments were designed and carried out to explore the gate dielectric degradation mechanism further. Transient device simulations determined ion-induced peak transient electric field and duration for a variety of ion LET, ion injection locations, and applied drain voltages. Results demonstrate that the peak transient electric fields exceed the breakdown strength of the gate dielectric, leading to dielectric defect generation and breakdown. GaN power device lifetime degradation caused by neutron irradiation is reported. Hundreds of devices were stressed in the off-state with various drain voltages from 75 V to 400 V while irradiated with a high-intensity neutron beam. Observing a statistically significant number of neutron-induced destructive single-event-effects (DSEEs) enabled an accurate extrapolation of terrestrial field failure rates. Nuclear event and electronic simulations were performed to model the effect of terrestrial neutron secondary ion-induced gate dielectric breakdown. Combined with the TCAD simulation results, we believe that heavy-ion-induced SEGR and neutron-induced SEGR share common physics mechanisms behind the failures. Overall, experimental data and simulation results provide evidence supporting the idea that both radiation-induced SBD and HBD are associated with defect-related conduction paths formed across the dielectric, in response to radiation-induced charge injection. A percolation theory-based dielectric degradation model is proposed, which explains the dielectric breakdown behaviors observed in heavy-ion irradiation experiments