Development of Robust Analog and Mixed-Signal Circuits in the Presence of Process- Voltage-Temperature Variations

Continued improvements of transceiver systems-on-a-chip play a key role in the advancement of mobile telecommunication products as well as wireless systems in biomedical and remote sensing applications. This dissertation addresses the problems of escalating CMOS process variability and system complexity that diminish the reliability and testability of integrated systems, especially relating to the analog and mixed-signal blocks. The proposed design techniques and circuit-level attributes are aligned with current built-in testing and self-calibration trends for integrated transceivers. In this work, the main focus is on enhancing the performances of analog and mixed-signal blocks with digitally adjustable elements as well as with automatic analog tuning circuits, which are experimentally applied to conventional blocks in the receiver path in order to demonstrate the concepts. The use of digitally controllable elements to compensate for variations is exemplified with two circuits. First, a distortion cancellation method for baseband operational transconductance amplifiers is proposed that enables a third-order intermodulation (IM3) improvement of up to 22dB. Fabricated in a 0.13µm CMOS process with 1.2V supply, a transconductance-capacitor lowpass filter with the linearized amplifiers has a measured IM3 below -70dB (with 0.2V peak-to-peak input signal) and 54.5dB dynamic range over its 195MHz bandwidth. The second circuit is a 3-bit two-step quantizer with adjustable reference levels, which was designed and fabricated in 0.18µm CMOS technology as part of a continuous-time SigmaDelta analog-to-digital converter system. With 5mV resolution at a 400MHz sampling frequency, the quantizer's static power dissipation is 24mW and its die area is 0.4mm^2. An alternative to electrical power detectors is introduced by outlining a strategy for built-in testing of analog circuits with on-chip temperature sensors. Comparisons of an amplifier's measurement results at 1GHz with the measured DC voltage output of an on-chip temperature sensor show that the amplifier's power dissipation can be monitored and its 1-dB compression point can be estimated with less than 1dB error. The sensor has a tunable sensitivity up to 200mV/mW, a power detection range measured up to 16mW, and it occupies a die area of 0.012mm^2 in standard 0.18µm CMOS technology. Finally, an analog calibration technique is discussed to lessen the mismatch between transistors in the differential high-frequency signal path of analog CMOS circuits. The proposed methodology involves auxiliary transistors that sense the existing mismatch as part of a feedback loop for error minimization. It was assessed by performing statistical Monte Carlo simulations of a differential amplifier and a double-balanced mixer designed in CMOS technologies

Low-frequency noise in downscaled silicon transistors: Trends, theory and practice

By the continuing downscaling of sub-micron transistors in the range of few to one deca-nanometers, we focus on the increasing relative level of the low-frequency noise in these devices. Large amount of published data and models are reviewed and summarized, in order to capture the state-of-the-art, and to observe that the 1/area scaling of low-frequency noise holds even for carbon nanotube devices, but the noise becomes too large in order to have fully deterministic devices with area less than 10nm×10nm. The low-frequency noise models are discussed from the point of view that the noise can be both intrinsic and coupled to the charge transport in the devices, which provided a coherent picture, and more interestingly, showed that the models converge each to other, despite the many issues that one can find for the physical origin of each model. Several derivations are made to explain crossovers in noise spectra, variable random telegraph amplitudes, duality between energy and distance of charge traps, behaviors and trends for figures of merit by device downscaling, practical constraints for micropower amplifiers and dependence of phase noise on the harmonics in the oscillation signal, uncertainty and techniques of averaging by noise characterization. We have also shown how the unavoidable statistical variations by fabrication is embedded in the devices as a spatial “frozen noise”, which also follows 1/area scaling law and limits the production yield, from one side, and from other side, the “frozen noise” contributes generically to temporal 1/f noise by randomly probing the embedded variations during device operation, owing to the purely statistical accumulation of variance that follows from cause-consequence principle, and irrespectively of the actual physical process. The accumulation of variance is known as statistics of “innovation variance”, which explains the nearly log-normal distributions in the values for low-frequency noise parameters gathered from different devices, bias and other conditions, thus, the origin of geometric averaging in low-frequency noise characterizations. At present, the many models generally coincide each with other, and what makes the difference, are the values, which, however, scatter prominently in nanodevices. Perhaps, one should make some changes in the approach to the low-frequency noise in electronic devices, to emphasize the “statistics behind the numbers”, because the general physical assumptions in each model always fail at some point by the device downscaling, but irrespectively of that, the statistics works, since the low-frequency noise scales consistently with the 1/area law

Development of a Portable CMOS Time-Domain Fluorescence Lifetime Imager

Modern laboratory equipments to measure the excited-state lifetime of fluorophores usually include an expensive picosecond pulsed-laser excitation source, a fragile photomultiplier tube, and a large instrument body for optics. A portable and robust device to make fluorescence lifetime measurement in nanosecond scale is of great attraction for chemists and biologists. This dissertation reports the development of a portable LED time-domain fluorimeter from an all-solid-state discrete-component prototype to its advanced CMOS integrated circuit implementation. The motivation of the research is to develop a multiplexed fluorimeter for point-of-care diagnosis. Instruments developed by this novel method have higher fill factor, are more portable, and are fabricated at lower cost