Progress of analog-hybrid computation

Review of fast analog/hybrid computer systems, integrated operational amplifiers, electronic mode-control switches, digital attenuators, and packaging technique

High temperature superconductor analog electronics for millimeter-wavelength communications

The performance of high temperature superconductor (HTS) passive microwave circuits up to X-band was encouraging when compared to their metallic counterparts. The extremely low surface resistance of HTS films up to about 10 GHz enables a reduction in loss by as much as 100 times compared to copper when both materials are kept at about 77 K. However, a superconductor's surface resistance varies in proportion to the frequency squared. Consequently, the potential benefit of HTS materials to millimeter-wave communications requires careful analysis. A simple ring resonator was used to evaluate microstrip losses at Ka-band. Additional promising components were investigated such as antennas and phase shifters. Prospects for HTS to favorable impact millimeter-wave communications systems are discussed

Design and characterisation of millimetre wave planar Gunn diodes and integrated circuits

Heterojunction planar Gunn devices were first demonstrated by Khalid et al in 2007. This new design of Gunn device, or transferred electron device, was based on the well-established material system of GaAs as the oscillation media. The design did not only breakthrough the frequency record of GaAs for conventional Gunn devices, but also has several advantages over conventional Gunn devices, such as the possibility of making multiple oscillators on a single chip and compatibility with monolithic integrated circuits. However, these devices faced the challenge of producing high enough RF power for practical applications and circuit technology for integration. This thesis describes systematic work on the design and characterisations of planar Gunn diodes and the associated millimetre-wave circuits for RF signal power enhancement. Focus has been put on improving the design of planar Gunn diodes and developing high performance integrated millimetre-wave circuits for combining multiple Gunn diodes. Improvement of device design has been proved to be one of the key methods to increase the signal power. By introducing additional δ-doping layers, electron concentration in the channel increases and better Gunn domain formation is achieved, therefore higher RF power and frequency are produced. Combining multiple channels in the vertical direction within devices is another effective way to increase the output signal power as well as DC-to-RF conversion efficiency. In addition, an alternative material system, i.e. In0.23Ga0.77As, has also been studied for this purpose. Planar passive components, such as resonators, couplers, low pass filters (LPFs), and power combiners with high performance over 100 GHz have been developed. These components can be smoothly integrated with planar Gunn diodes for compact planar Gunn oscillators, and therefore contribute to RF power enhancement. In addition, several new measurement techniques for characterising oscillators and passive devices have also been developed during this work and will be included in this thesis

High linearity analog and mixed-signal integrated circuit design

Linearity is one of the most important specifications in electrical circuits.;In Chapter 1, a ladder-based transconductance networks has been adopted first time to build a low distortion analog filters for low frequency applications. This new technique eliminated the limitation of the application with the traditional passive resistors for low frequency applications. Based on the understanding of this relationship, a strategy for designing high linear analog continuous-time filters has been developed. According to our strategy, a prototype analog integrated filter has been designed and fabricated with AMI05 0.5 um standard CMOS process. Experimental results proved this technique has the ability to provide excellent linearity with very limited active area.;In Chapter 2, the relationships between the transconductance networks and major circuit specifications have been explored. The analysis reveals the trade off between the silicon area saved by the transconductance networks and the some other important specifications such as linearity, noise level and the process variations of the overall circuit. Experimental results of discrete component circuit matched very well with our analytical outcomes to predict the change of linearity and noise performance associated with different transconductance networks.;The Chapter 3 contains the analysis and mathematical proves of the optimum passive area allocations for several most popular analog active filters. Because the total area is now manageable by the technique introduced in the Chapter 1, the further reduce of the total area will be very important and useful for efficient utilizing the silicon area, especially with the today\u27s fast growing area efficiency of the highly density digital circuits. This study presents the mathematical conclusion that the minimum passive area will be achieved with the equalized resistor and capacitor.;In the Chapter 4, a well recognized and highly honored current division circuit has been studied. Although it was claimed to be inherently linear and there are over 60 published works reported with high linearity based on this technique, our study discovered that this current division circuit can achieve, if proper circuit condition being managed, very limited linearity and all the experimental verified performance actually based on more general circuit principle. Besides its limitation, however, we invented a novel current division digital to analog converter (DAC) based on this technique. Benefiting from the simple circuit structure and moderate good linearity, a prototype 8-bit DAC was designed in TSMC018 0.2 um CMOS process and the post layout simulations exhibited the good linearity with very low power consumption and extreme small active area.;As the part of study of the output stage for the current division DAC discussed in the Chapter 4, a current mirror is expected to amplify the output current to drive the low resistive load. The strategy of achieving the optimum bandwidth of the cascode current mirror with fixed total current gain is discussed in the Chapter 5.;Improving the linearity of pipeline ADC has been the hottest and hardest topic in solid-state circuit community for decade. In the Chapter 6, a comprehensive study focus on the existing calibration algorithms for pipeline ADCs is presented. The benefits and limitations of different calibration algorithms have been discussed. Based on the understanding of those reported works, a new model-based calibration is delivered. The simulation results demonstrate that the model-based algorithms are vulnerable to the model accuracy and this weakness is very hard to be removed. From there, we predict the future developments of calibration algorithms that can break the linearity limitations for pipelined ADC. (Abstract shortened by UMI.

Low cost high efficiency GaAs monolithic RF module for SARSAT distress beacons

Low cost high performance (5 Watts output) 406 MHz beacons are urgently needed to realize the maximum utilization of the Search and Rescue Satellite-Aided Tracking (SARSAT) system spearheaded in the U.S. by NASA. Although current technology can produce beacons meeting the output power requirement, power consumption is high due to the low efficiency of available transmitters. Field performance is currently unsatisfactory due to the lack of safe and reliable high density batteries capable of operation at -40 C. Low cost production is also a crucial but elusive requirement for the ultimate wide scale utilization of this system. Microwave Monolithics Incorporated (MMInc.) has proposed to make both the technical and cost goals for the SARSAT beacon attainable by developing a monolithic GaAs chip set for the RF module. This chip set consists of a high efficiency power amplifier and a bi-phase modulator. In addition to implementing the RF module in Monolithic Microwave Integrated Circuit (MMIC) form to minimize ultimate production costs, the power amplifier has a power-added efficiency nearly twice that attained with current commercial technology. A distress beacon built using this RF module chip set will be significantly smaller in size and lighter in weight due to a smaller battery requirement, since the 406 MHz signal source and the digital controller have far lower power consumption compared to the 5 watt power amplifier. All the program tasks have been successfully completed. The GaAs MMIC RF module chip set has been designed to be compatible with the present 406 MHz signal source and digital controller. A complete high performance low cost SARSAT beacon can be realized with only additional minor iteration and systems integration

Low-Voltage GaN Based Inverter for Power Steering Application

In the paper, an experimental evaluation of a low voltage Gallium Nitride (GaN) based inverter suitable for power steering application is presented. The inverter switches belong to the last generation of low voltage enhancement-mode normally-off GaN Field-Effect Transistor (FET). The main advantage in the usage of these devices is the high switching frequency capability with consequently volume reduction of the passive components. On the other hand, the layout and the device packaging solution are a challenge to reduce the parasitic inductances. Furthermore, the dv/dt increasing with the switching frequency need a deep investigation in a motor drive application. The paper deals with the advances and drawbacks of the GaN FETs in two-level Pulse Width Modulation (PWM) motor drive applications providing a piece of detailed experimental evidence and design guidelines

An accurate, trimless, high PSRR, low-voltage, CMOS bandgap reference IC

Bandgap reference circuits are used in a host of analog, digital, and mixed-signal systems to establish an accurate voltage standard for the entire IC. The accuracy of the bandgap reference voltage under steady-state (dc) and transient (ac) conditions is critical to obtain high system performance. In this work, the impact of process, power-supply, load, and temperature variations and package stresses on the dc and ac accuracy of bandgap reference circuits has been analyzed. Based on this analysis, the a bandgap reference that 1. has high dc accuracy despite process and temperature variations and package stresses, without resorting to expensive trimming or noisy switching schemes, 2. has high dc and ac accuracy despite power-supply variations, without using large off-chip capacitors that increase bill-of-material costs, 3. has high dc and ac accuracy despite load variations, without resorting to error-inducing buffers, 4. is capable of producing a sub-bandgap reference voltage with a low power-supply, to enable it to operate in modern, battery-operated portable applications, 5. utilizes a standard CMOS process, to lower manufacturing costs, and 6. is integrated, to consume less board space has been proposed. The functionality of critical components of the system has been verified through prototypes after which the performance of the complete system has been evaluated by integrating all the individual components on an IC. The proposed CMOS bandgap reference can withstand 5mA of load variations while generating a reference voltage of 890mV that is accurate with respect to temperature to the first order. It exhibits a trimless, dc 3-sigma accuracy performance of 0.84% over a temperature range of -40°C to 125°C and has a worst case ac power-supply ripple rejection (PSRR) performance of 30dB up to 50MHz using 60pF of on-chip capacitance. All the proposed techniques lead to the development of a CMOS bandgap reference that meets the low-cost, high-accuracy demands of state-of-the-art System-on-Chip environments.Ph.D.Committee Chair: Rincon-Mora, Gabriel; Committee Member: Ayazi, Farrokh; Committee Member: Bhatti, Pamela; Committee Member: Leach, W. Marshall; Committee Member: Morley, Thoma

4H-SiC Integrated circuits for high temperature and harsh environment applications

Silicon Carbide (SiC) has received a special attention in the last decades thanks to its superior electrical, mechanical and chemical proprieties. SiC is mostly used for applications where Silicon is limited, becoming a proper material for both unipolar and bipolar power device able to work under high power, high frequency and high temperature conditions. Aside from the outstanding theoretical and practical advantages still to be proved in SiC devices, the need for more accurate models for the design and optimization of these devices, along with the development of integrated circuits (ICs) on SiC is indispensable for the further success of modern power electronics. The design and development of SiC ICs has become a necessity since the high temperature operation of ICs is expected to enable important improvements in aerospace, automotive, energy production and other industrial systems. Due to the last impressive progresses in the manufacturing of high quality SiC substrates, the possibility of developing ICs applications is now feasible. SiC unipolar transistors, such as JFETs and MESFETs show a promising potential for digital ICs operating at high temperature and in harsh environments. The reported ICs on SiC have been realized so far with either a small number of elements, or with a low integration density. Therefore, this work demonstrates that by means of our SiC MESFET technology, multi-stage digital ICs fabrication containing a large number of 4H-SiC devices is feasible, accomplishing some of the most important ICs requirements. The ultimate objective is the development of SiC digital building blocks by transferring the Si CMOS topologies, hence demonstrating that the ICs SiC technology can be an important competitor of the Si ICs technology especially in application fields in which high temperature, high switching speed and harsh environment operations are required. The study starts with the current normally-on SiC MESFET CNM complete analysis of an already fabricated MESFET. It continues with the modeling and fabrication of a new planar-MESFET structure together with new epitaxial resistors specially suited for high temperature and high integration density. A novel device isolation technique never used on SiC before is approached. A fabrication process flow with three metal levels fully compatible with the CMOS technology is defined. An exhaustive experimental characterization at room and high temperature (300ºC) and Spice parameter extractions for both structures are performed. In order to design digital ICs on SiC with the previously developed devices, the current available topologies for normally-on transistors are discussed. The circuits design using Spice modeling, the process technology, the fabrication and the testing of the 4H-SiC MESFET elementary logic gates library at high temperature and high frequencies are performed. The MESFET logic gates behavior up to 300ºC is analyzed. Finally, this library has allowed us implementing complex multi-stage logic circuits with three metal levels and a process flow fully compatible with a CMOS technology. This study demonstrates that the development of important SiC digital blocks by transferring CMOS topologies (such as Master Slave Data Flip-Flop and Data-Reset Flip-Flop) is successfully achieved. Hence, demonstrating that our 4H-SiC MESFET technology enables the fabrication of mixed signal ICs capable to operate at high temperature (300ºC) and high frequencies (300kHz). We consider this study an important step ahead regarding the future ICs developments on SiC. Finally, experimental irradiations were performed on W-Schotthy diodes and mesa-MESFET devices (with the same Schottky gate than the planar SiC MESFET) in order to study their radiation hardness stability. The good radiation endurance of SiC Schottky-gate devices is proven. It is expected that the new developed devices with the same W-Schottky gate, to have a similar behavior in radiation rich environments.Postprint (published version