Efficient scrub mechanisms for error-prone emerging memories

Journal ArticleMany memory cell technologies are being considered as possible replacements for DRAM and Flash technologies, both of which are nearing their scaling limits. While these new cells (PCM, STT-RAM, FeRAM, etc.) promise high density, better scaling, and non-volatility, they introduce new challenges. Solutions at the architecture level can help address some of these problems; e.g., prior re-search has proposed wear-leveling and hard error tolerance mechanisms to overcome the limited write endurance of PCM cells. In this paper, we focus on the soft error problem in PCM, a topic that has received little attention in the architecture community. Soft errors in DRAM memories are typically addressed by having SECDED support and a scrub mechanism. The scrub mechanism scans the memory looking for a single-bit error and corrects it be-fore the line experiences a second uncorrectable error. However, PCM (and other emerging memories) are prone to new sources of soft errors. In particular, multi-level cell (MLC) PCM devices will suffer from resistance drift, that increases the soft error rate and incurs high overheads for the scrub mechanism. This paper is the first to study the design of architectural scrub mechanisms, especially when tailored to the drift phenomenon in MLC PCM. Many of our solutions will also apply to other soft-error prone emerging memories. We first show that scrub overheads can be reduced with support for strong ECC codes and a lightweight error detection operation. We then design different scrub algorithms that can adaptively trade-off soft and hard errors. Using an approach that combines all proposed solutions, our scrub mechanism yields a 96.5% reduction in uncorrectable errors, a 24.4 × decrease in scrub-related writes, and a 37.8% reduction in scrub energy, relative to a basic scrub algorithm used in modern DRAM systems

Codes for Limited Magnitude Error Correction in Multilevel Cell Memories

Multilevel cell (MLC) memories have been advocated for increasing density at low cost in next generation memories. However, the feature of several bits in a cell reduces the distance between levels; this reduced margin makes such memories more vulnerable to defective phenomena and parameter variations, leading to an error in stored data. These errors typically are of limited magnitude, because the induced change causes the stored value to exceed only a few of the level boundaries. To protect these memories from such errors and ensure that the stored data is not corrupted, Error Correction Codes (ECCs) are commonly used. However, most existing codes have been designed to protect memories in which each cell stores a bit and thus, they are not efficient to protect MLC memories. In this paper, an efficient scheme that can correct up to magnitude-3 errors is presented and evaluated. The scheme is based by combining ECCs that are commonly used to protect traditional memories. In particular, Interleaved Parity (IP) bits and Single Error Correction and Double Adjacent Error Correction (SEC-DAEC) codes are utilized; both these codes are combined in the proposed IP-DAEC scheme to efficiently provide a strong coding function for correction, thus exceeding the capabilities of most existing coding schemes for limited magnitude errors. The SEC-DAEC code is used to detect the cell in error and correct some bits, while the IP bits identify the remaining erroneous bits in the memory cell. The use of these simple codes results in an efficient implementation of the decoder compared to existing techniques as shown by the evaluation results presented in this paper. The proposed scheme is also competitive in terms of number of parity check bits and memory redundancy. Therefore, the proposed IP-DAEC scheme is a very efficient alternative to protect and correct MLC memories from limited magnitude errors.Pedro Reviriego was partially supported by the TEXEO project (TEC2016-80339-R) funded by the Spanish Research Plan and by the Madrid Community research project TAPIR-CM grant no. P2018/TCS-4496

Enabling Fine-Grain Restricted Coset Coding Through Word-Level Compression for PCM

Phase change memory (PCM) has recently emerged as a promising technology to meet the fast growing demand for large capacity memory in computer systems, replacing DRAM that is impeded by physical limitations. Multi-level cell (MLC) PCM offers high density with low per-byte fabrication cost. However, despite many advantages, such as scalability and low leakage, the energy for programming intermediate states is considerably larger than programing single-level cell PCM. In this paper, we study encoding techniques to reduce write energy for MLC PCM when the encoding granularity is lowered below the typical cache line size. We observe that encoding data blocks at small granularity to reduce write energy actually increases the write energy because of the auxiliary encoding bits. We mitigate this adverse effect by 1) designing suitable codeword mappings that use fewer auxiliary bits and 2) proposing a new Word-Level Compression (WLC) which compresses more than 91% of the memory lines and provides enough room to store the auxiliary data using a novel restricted coset encoding applied at small data block granularities. Experimental results show that the proposed encoding at 16-bit data granularity reduces the write energy by 39%, on average, versus the leading encoding approach for write energy reduction. Furthermore, it improves endurance by 20% and is more reliable than the leading approach. Hardware synthesis evaluation shows that the proposed encoding can be implemented on-chip with only a nominal area overhead.Comment: 12 page

A DATA AWARE APPROACH TO SALVAGE THE ENDURANCE OF PHASE-CHANGE MEMORY

Phase Change Memory (PCM) is an emerging non-volatile memory technology that could either replace or augment DRAM and NAND flash that are hindered by scalability challenges. PCM suffers from a limited endurance problem that needs to be alleviated before it can be endorsed into the memory stack. This thesis is based on the observation that the endurance problem and its ramification depend on the write data. Accordingly, a data-aware approach is applied to salvage the endurance of PCM at three different stages: pre-write fault avoidance, post-write fault tolerance and post-failure recovery. The pre-write fault avoidance stage aims at reducing the endurance cost of servicing write requests. To this end, Cost Aware Flip Optimization (CAFO) is presented as an efficient technique to lessen the endurance degradation. Essentially, CAFO relies on a cost model that captures the endurance cost of programming memory cells based on their already stored values. Subsequently,the write data is encoded into a form that incurs a lower endurance cost than the original write data. Overall, CAFO is capable of reducing the endurance cost by up to 65% more than the existing schemes. Worn out PCM cells exhibit a stuck-at fault model which makes the manifestation of errors dependent on the values that cells are stuck at. When a write fails, the data is rewritten inverted. This dissertation shows that applying data inversion at the post-write fault tolerance stage exploits the data dependent nature of errors which enables ECCs to tolerate faults up to double their nominal capability. Furthermore, extensions to RDIS which is an ECC designed specifically for the stuck-at fault model are presented. At the post-failure recovery stage, Data Dependent Sparing is presented to manage bad blocks in PCM. Departing from the observation that defective blocks in the context of the stuck-at fault model still exhibit a low write failure probability due to the data dependent nature of errors, this thesis takes the approach of reusing blocks that are defective yet better-than-bad through a dynamic management of the reserve spare space. Data Dependent Sparing is capable of increasing the lifetime of PCM by up to 18%

Synaptic Behavior in Metal Oxide-Based Memristors

With the end of Moore’s law in sight, new computing paradigms are needed to fulfill the increasing demands on data and processing potentials. Inspired by the operation of the human brain, from the dimensionality, energy and underlying functionalities, neuromorphic computing systems that are building upon circuit elements to mimic the neurobiological activities are good concepts to meet the challenge. As an important factor in a neuromorphic computer, electronic synapse has been intensively studied. The utilization of transistors, atomic switches and memristors has been proposed to perform synaptic functions. Memristors, with several unique properties, are exceptional candidates for emulating artificial synapses and thus for building artificial neural networks. In this paper, metal oxide-based memristor synapses are reviewed, from materials, properties, mechanisms, to architecture. The synaptic plasticity and learning rules are described. The electrical switching characteristics of a variety of metal oxide-based memristors are discussed, with a focus on their application as biological synapses

In-memory computing with emerging memory devices: Status and outlook

Supporting data for "In-memory computing with emerging memory devices: status and outlook", submitted to APL Machine Learning

COMET: A Cross-Layer Optimized Optical Phase Change Main Memory Architecture

Traditional DRAM-based main memory systems face several challenges with memory refresh overhead, high latency, and low throughput as the industry moves towards smaller DRAM cells. These issues have been exacerbated by the emergence of data-intensive applications in recent years. Memories based on phase change materials (PCMs) offer promising solutions to these challenges. PCMs store data in the material's phase, which can shift between amorphous and crystalline states when external thermal energy is supplied. This is often achieved using electrical pulses. Alternatively, using laser pulses and integration with silicon photonics offers a unique opportunity to realize high-bandwidth and low-latency photonic memories. Such a memory system may in turn open the possibility of realizing fully photonic computing systems. But to realize photonic memories, several challenges that are unique to the photonic domain such as crosstalk, optical loss management, and laser power overhead have to be addressed. In this work, we present COMET, the first cross-layer optimized optical main memory architecture that uses PCMs. In architecting COMET, we explore how to use silicon photonics and PCMs together to design a large-scale main memory system while addressing associated challenges. We explore challenges and propose solutions at the PCM cell, photonic memory circuit, and memory architecture levels. Based on our evaluations, COMET offers 7.1x better bandwidth, 15.1x lower EPB, and 3x lower latencies than the best-known prior work on photonic main memory architecture design