Design Exploration of mm-Wave Integrated Transceivers for Short-Range Mobile Communications Towards 5G

This paper presents a design exploration, at both system and circuit levels, of integrated transceivers for the upcoming fifth generation (5G) of wireless communications. First, a system level model for 5G communications is carried out to derive transceiver design specifications. Being 5G still in pre-standardization phase, a few currently used standards (ECMA-387, IEEE 802.15.3c, and LTE-A) are taken into account as the reference for the signal format. Following a top-down flow, this work presents the design in 65nm CMOS SOI and bulk technologies of the key blocks of a fully integrated transceiver: low noise amplifier (LNA), power amplifier (PA) and on-chip antenna. Different circuit topologies are presented and compared allowing for different trade-offs between gain, power consumption, noise figure, output power, linearity, integration cost and link performance. The best configuration of antenna and LNA co-design results in a peak gain higher than 27dB, a noise figure below 5dB and a power consumption of 35mW. A linear PA design is presented to face the high Peak to Average Power Ratio (PAPR) of multi-carrier transmissions envisaged for 5G, featuring a 1dB compression point output power (OP1dB) of 8.2dBm. The delivered output power in the linear region can be increased up to 13.2dBm by combining four basic PA blocks through a Wilkinson power combiner/divider circuit. The proposed circuits are shown to enable future 5G connections, operating in a mm-wave spectrum range (spanning 9GHz, from 57GHz to 66GHz), with a data-rate of several Gb/s in a short-range scenario, spanning from few centimeters to tens of meters

Doctor of Philosophy

dissertationSince the late 1950s, scientists have been working toward realizing implantable devices that would directly monitor or even control the human body's internal activities. Sophisticated microsystems are used to improve our understanding of internal biological processes in animals and humans. The diversity of biomedical research dictates that microsystems must be developed and customized specifically for each new application. For advanced long-term experiments, a custom designed system-on-chip (SoC) is usually necessary to meet desired specifications. Custom SoCs, however, are often prohibitively expensive, preventing many new ideas from being explored. In this work, we have identified a set of sensors that are frequently used in biomedical research and developed a single-chip integrated microsystem that offers the most commonly used sensor interfaces, high computational power, and which requires minimum external components to operate. Included peripherals can also drive chemical reactions by setting the appropriate voltages or currents across electrodes. The SoC is highly modular and well suited for prototyping in and ex vivo experimental devices. The system runs from a primary or secondary battery that can be recharged via two inductively coupled coils. The SoC includes a 16-bit microprocessor with 32 kB of on chip SRAM. The digital core consumes 350 μW at 10 MHz and is capable of running at frequencies up to 200 MHz. The integrated microsystem has been fabricated in a 65 nm CMOS technology and the silicon has been fully tested. Integrated peripherals include two sigma-delta analog-to-digital converters, two 10-bit digital-to-analog converters, and a sleep mode timer. The system also includes a wireless ultra-wideband (UWB) transmitter. The fullydigital transmitter implementation occupies 68 x 68 μm2 of silicon area, consumes 0.72 μW static power, and achieves an energy efficiency of 19 pJ/pulse at 200 MHz pulse repetition frequency. An investigation of the suitability of the UWB technology for neural recording systems is also presented. Experimental data capturing the UWB signal transmission through an animal head are presented and a statistical model for large-scale signal fading is developed

Four-element phased-array beamformers and a self-interference canceling full-duplex transciver in 130-nm SiGe for 5G applications at 26 GHz

This thesis is on the design of radio-frequency (RF) integrated front-end circuits for next generation 5G communication systems. The demand for higher data rates and lower latency in 5G networks can only be met using several new technologies including, but not limited to, mm-waves, massive-MIMO, and full-duplex. Use of mm-waves provides more bandwidth that is necessary for high data rates at the cost of increased attenuation in air. Massive-MIMO arrays are required to compensate for this increased path loss by providing beam steering and array gain. Furthermore, full duplex operation is desirable for improved spectrum efficiency and reduced latency. The difficulty of full duplex operation is the self-interference (SI) between transmit (TX) and receive (RX) paths. Conventional methods to suppress this interference utilize either bulky circulators, isolators, couplers or two separate antennas. These methods are not suitable for fully-integrated full-duplex massive-MIMO arrays. This thesis presents circuit and system level solutions to the issues summarized above, in the form of SiGe integrated circuits for 5G applications at 26 GHz. First, a full-duplex RF front-end architecture is proposed that is scalable to massive-MIMO arrays. It is based on blind, RF self-interference cancellation that is applicable to single/shared antenna front-ends. A high resolution RF vector modulator is developed, which is the key building block that empowers the full-duplex frontend architecture by achieving better than state-of-the-art 10-b monotonic phase control. This vector modulator is combined with linear-in-dB variable gain amplifiers and attenuators to realize a precision self-interference cancellation circuitry. Further, adaptive control of this SI canceler is made possible by including an on-chip low-power IQ downconverter. It correlates copies of transmitted and received signals and provides baseband/dc outputs that can be used to adaptively control the SI canceler. The solution comes at the cost of minimal additional circuitry, yet significantly eases linearity requirements of critical receiver blocks at RF/IF such as mixers and ADCs. Second, to complement the proposed full-duplex front-end architecture and to provide a more complete solution, high-performance beamformer ICs with 5-/6- b phase and 3-/4-b amplitude control capabilities are designed. Single-channel, separate transmitter and receiver beamformers are implemented targeting massive- MIMO mode of operation, and their four-channel versions are developed for phasedarray communication systems. Better than state-of-the-art noise performance is obtained in the RX beamformer channel, with a full-channel noise figure of 3.3 d

Surpassing Fundamental Limits through Time Varying Electromagnetics

Surpassing the fundamental limits that govern all electromagnetic structures, such as reciprocity and the delay-bandwidth-size limit, will have a transformative impact on all applications based on electromagnetic circuits and systems. For instance, violating principles of reciprocity enables non-reciprocal components such as isolators and circulators, which find application in full-duplex wireless radios, radar, biomedical imaging, and quantum computing systems. Overcoming the delay-bandwidth-size limit enables ultra-broadband yet extremely-compact devices whose size is not fundamentally related to the wavelength at the operating frequency. The focus of this dissertation is on using time-variance as a new toolbox to overcome these fundamental limits and re-imagine circuit and system design. Traditional non-reciprocal components are realized using ferrite materials that loose their reciprocity under the application of external magnetic bias. However, the sheer volume, cost and weight of these magnet based non-reciprocal components coupled with their inability to be fabricated in conventional semiconductor processes, have limited their application to bulky and large-scale systems. Other approaches such as active-biased and non-linearity based non-reciprocity are compatible with semiconductor processes, however, they suffer from other poor linearity and noise performance. In this dissertation, using passive transistor switch as the modulating element, we have proposed the concept of spatio-temporal conductivity modulation and have demonstrated a gamut of non-reciprocal devices ranging from gyrators to isolators and circulators. Through novel circuit topologies, for the first time, we have demonstrated on-chip circulators with multi-watt input power handling, operation at high millimeter-wave frequencies, and tailor made circulators for emerging technologies such as simultaneous-transmit-and-receive MRI and quantum computing. Delay-bandwidth-size trade-off is another fundamental electromagnetic limit, that constrains the delay imparted by a medium or a device within a fixed footprint to be inversely proportional to the signal bandwidth. It is this limit that governs the size of any microwave passive devices to be inversely proportional to its operating frequency. As a part of this dissertation, through intelligent clocking of switched capacitor networks we overcame the delay-bandwidth-size limit, thus resulting in infinitesimal, yet broadband microwave devices. Here we proposed a new paradigm in wave propagation where the properties such as the propagation delay and characteristic impedance does not depend on the constituent elements/materials of the medium, but rather heavily rely on the user-defined modulation scheme, thereby opening huge opportunities for realizing highly-reconfigurable passives. Leveraging these concepts, we demonstrated wide range of reciprocal an non-reciprocal devices including ultra-compact delay elements, highly-reconfigurable microwave passives, ultra-wideband circulators with infinitesimal form-factors and dispersion-free chip scale floquet topological insulators. Application of these devices have also been evaluated in real-world systems through our demonstrations of wideband, full-duplex receivers leveraging switched capacitors based true-time-delay interference cancelers and floquet topological insulator based antenna interfaces for full-duplex phased-arrays and ultra-wideband beamformers. Furthermore, to cater the growing RF and microwave needs of future, large-scale quantum computing systems, we demonstrated a low-cryogenic, wideband circulator based on time modulation of superconducting devices. This superconducting circulator is expected to operate alongside the superconducting qubits, inside a dilution refrigerator at 10mK-100mK, thus enabling a tightly integrated quantum system. We also presented the design and implementation of a cryogenic-CMOS clock driver chip that will generate the clocks required by the superconducting circulator. Finally, we also demonstrated the design and implementation of a low-noise, low power consumption, 6GHz - 8GHz cryogenic downconversion receiver at 4K for cryogenic qubit readout

Efficient and Linear CMOS Power Amplifier and Front-end Design for Broadband Fully-Integrated 28-GHz 5G Phased Arrays

Demand for data traffic on mobile networks is growing exponentially with time and on a global scale. The emerging fifth-generation (5G) wireless standard is being developed with millimeter-wave (mm-Wave) links as a key technological enabler to address this growth by a 2020 time frame. The wireless industry is currently racing to deploy mm-Wave mobile services, especially in the 28-GHz band. Previous widely-held perceptions of fundamental propagation limitations were overcome using phased arrays. Equally important for success of 5G is the development of low-power, broadband user equipment (UE) radios in commercial-grade technologies. This dissertation demonstrates design methodologies and circuit techniques to tackle the critical challenge of key phased array front-end circuits in low-cost complementary metal oxide semiconductor (CMOS) technology. Two power amplifier (PA) proof-of-concept prototypes are implemented in deeply scaled 28- nm and 40-nm CMOS processes, demonstrating state-of-the-art linearity and efficiency for extremely broadband communication signals. Subsequently, the 40 nm PA design is successfully embedded into a low-power fully-integrated transmit-receive front-end module. The 28 nm PA prototype in this dissertation is the first reported linear, bulk CMOS PA targeting low-power 5G mobile UE integrated phased array transceivers. An optimization methodology is presented to maximizing power added efficiency (PAE) in the PA output stage at a desired error vector magnitude (EVM) and range to address challenging 5G uplink requirements. Then, a source degeneration inductor in the optimized output stage is shown to further enable its embedding into a two-stage transformer-coupled PA. The inductor helps by broadening inter-stage impedance matching bandwidth, and helping to reduce distortion. Designed and fabricated in 1P7M 28 nm bulk CMOS and using a 1 V supply, the PA achieves +4.2 dBm/9% measured Pout/PAE at −25 dBc EVM for a 250 MHz-wide, 64-QAM orthogonal frequency division multiplexing (OFDM) signal with 9.6 dB peak-to-average power ratio (PAPR). The PA also achieves 35.5%/10% PAE for continuous wave signals at saturation/9.6dB back-off from saturation. To the best of the author’s knowledge, these are the highest measured PAE values among published K- and K a-band CMOS PAs to date. To drastically extend the communication bandwidth in 28 GHz-band UE devices, and to explore the potential of CMOS technology for more demanding access point (AP) devices, the second PA is demonstrated in a 40 nm process. This design supports a signal radio frequency bandwidth (RFBW) >3× the state-of-the-art without degrading output power (i.e. range), PAE (i.e. battery life), or EVM (i.e. amplifier fidelity). The three-stage PA uses higher-order, dual-resonance transformer matching networks with bandwidths optimized for wideband linearity. Digital gain control of 9 dB range is integrated for phased array operation. The gain control is a needed functionality, but it is largely absent from reported high-performance mm-Wave PAs in the literature. The PA is fabricated in a 1P6M 40 nm CMOS LP technology with 1.1 V supply, and achieves Pout/PAE of +6.7 dBm/11% for an 8×100 MHz carrier aggregation 64-QAM OFDM signal with 9.7 dB PAPR. This PA therefore is the first to demonstrate the viability of CMOS technology to address even the very challenging 5G AP/downlink signal bandwidth requirement. Finally, leveraging the developed PA design methodologies and circuits, a low power transmit-receive phased array front-end module is fully integrated in 40 nm technology. In transmit-mode, the front-end maintains the excellent performance of the 40 nm PA: achieving +5.5 dBm/9% for the same 8×100 MHz carrier aggregation signal above. In receive-mode, a 5.5 dB noise figure (NF) and a minimum third-order input intercept point (IIP₃) of −13 dBm are achieved. The performance of the implemented CMOS frontend is comparable to state-of-the-art publications and commercial products that were very recently developed in silicon germanium (SiGe) technologies for 5G communication

Digital ADCs and ultra-wideband RF circuits for energy constrained wireless applications by Denis Clarke Daly.

Thesis (Ph. D.)--Massachusetts Institute of Technology, Dept. of Electrical Engineering and Computer Science, 2009.Cataloged from PDF version of thesis.Includes bibliographical references (p. 173-183).Ongoing advances in semiconductor technology have enabled a multitude of portable, low power devices like cellular phones and wireless sensors. Most recently, as transistor device geometries reach the nanometer scale, transistor characteristics have changed so dramatically that many traditional circuits and architectures are no longer optimal and/or feasible. As a solution, much research has focused on developing 'highly digital' circuits and architectures that are tolerant of the increased leakage, variation and degraded voltage headrooms associated with advanced CMOS processes. This thesis presents several highly digital, mixed-signal circuits and architectures designed for energy constrained wireless applications. First, as a case study, a highly digital, voltage scalable flash ADC is presented. The flash ADC, implemented in 0.18 [mu]m CMOS, leverages redundancy and calibration to achieve robust operation at supply voltages from 0.2 V to 0.9 V. Next, the thesis expands in scope to describe a pulsed, noncoherent ultra-wideband transceiver chipset, implemented in 90 nm CMOS and operating in the 3-to-5 GHz band. The all-digital transmitter employs capacitive combining and pulse shaping in the power amplifier to meet the FCC spectral mask without any off-chip filters. The noncoherent receiver system-on-chip achieves both energy efficiency and high performance by employing simple amplifier and ADC structures combined with extensive digital calibration. Finally, the transceiver chipset is integrated in a complete system for wireless insect flight control.(cont.) Through the use of a flexible PCB and 3D die stacking, the total weight of the electronics is kept to 1 g, within the carrying capacity of an adult Manduca sexta moth. Preliminary wireless flight control of a moth in a wind tunnel is demonstrated.Ph.D