Ultra-low Quiescent Current NMOS Low Dropout Regulator With Fast Transient response for Always-On Internet-of-Things Applications

abstract: The increased adoption of Internet-of-Things (IoT) for various applications like smart home, industrial automation, connected vehicles, medical instrumentation, etc. has resulted in a large scale distributed network of sensors, accompanied by their power supply regulator modules, control and data transfer circuitry. Depending on the application, the sensor location can be virtually anywhere and therefore they are typically powered by a localized battery. To ensure long battery-life without replacement, the power consumption of the sensor nodes, the supply regulator and, control and data transmission unit, needs to be very low. Reduction in power consumption in the sensor, control and data transmission is typically done by duty-cycled operation such that they are on periodically only for short bursts of time or turn on only based on a trigger event and are otherwise powered down. These approaches reduce their power consumption significantly and therefore the overall system power is dominated by the consumption in the always-on supply regulator. Besides having low power consumption, supply regulators for such IoT systems also need to have fast transient response to load current changes during a duty-cycled operation. Supply regulation using low quiescent current low dropout (LDO) regulators helps in extending the battery life of such power aware always-on applications with very long standby time. To serve as a supply regulator for such applications, a 1.24 µA quiescent current NMOS low dropout (LDO) is presented in this dissertation. This LDO uses a hybrid bias current generator (HBCG) to boost its bias current and improve the transient response. A scalable bias-current error amplifier with an on-demand buffer drives the NMOS pass device. The error amplifier is powered with an integrated dynamic frequency charge pump to ensure low dropout voltage. A low-power relaxation oscillator (LPRO) generates the charge pump clocks. Switched-capacitor pole tracking (SCPT) compensation scheme is proposed to ensure stability up to maximum load current of 150 mA for a low-ESR output capacitor range of 1 - 47µF. Designed in a 0.25 µm CMOS process, the LDO has an output voltage range of 1V – 3V, a dropout voltage of 240 mV, and a core area of 0.11 mm2.Dissertation/ThesisDoctoral Dissertation Electrical Engineering 201

An Ultra-Low-Power RFID/NFC Frontend IC Using 0.18 μm CMOS Technology for Passive Tag Applications

Battery-less passive sensor tags based on RFID or NFC technology have achieved much popularity in recent times. Passive tags are widely used for various applications like inventory control or in biotelemetry. In this paper, we present a new RFID/NFC frontend IC (integrated circuit) for 13.56 MHz passive tag applications. The design of the frontend IC is compatible with the standard ISO 15693/NFC 5. The paper discusses the analog design part in details with a brief overview of the digital interface and some of the critical measured parameters. A novel approach is adopted for the demodulator design, to demodulate the 10% ASK (amplitude shift keying) signal. The demodulator circuit consists of a comparator designed with a preset offset voltage. The comparator circuit design is discussed in detail. The power consumption of the bandgap reference circuit is used as the load for the envelope detection of the ASK modulated signal. The sub-threshold operation and low-supply-voltage are used extensively in the analog design—to keep the power consumption low. The IC was fabricated using 0.18 μ m CMOS technology in a die area of 1.5 mm × 1.5 mm and an effective area of 0.7 m m 2 . The minimum supply voltage desired is 1.2 V, for which the total power consumption is 107 μ W. The analog part of the design consumes only 36 μ W, which is low in comparison to other contemporary passive tags ICs. Eventually, a passive tag is developed using the frontend IC, a microcontroller, a temperature and a pressure sensor. A smart NFC device is used to readout the sensor data from the tag employing an Android-based application software. The measurement results demonstrate the full passive operational capability. The IC is suitable for low-power and low-cost industrial or biomedical battery-less sensor applications. A figure-of-merit (FOM) is proposed in this paper which is taken as a reference for comparison with other related state-of-the-art researches

A Ringamp-Assisted, Output Capacitor-less Analog CMOS Low-Dropout Voltage Regulator

Continued advancements in state-of-the-art integrated circuits have furthered trends toward higher computational performance and increased functionality within smaller circuit area footprints, all while improving power efficiencies to meet the demands of mobile and battery-powered applications. A significant portion of these advancements have been enabled by continued scaling of CMOS technology into smaller process node sizes, facilitating faster digital systems and power optimized computation. However, this scaling has degraded classic analog amplifying circuit structures with reduced voltage headroom and lower device output resistance; and thus, lower available intrinsic gain. This work investigates these trends and their impact for fine-grain Low-Dropout (LDO) Voltage Regulators, leading to a presented design methodology and implementation of a state-of-the-art Ringamp-Assisted, Output Capacitor-less Analog CMOS LDO Voltage Regulator capable of both power scaling and process node scaling for general SoC applications

Design of a Programmable Passive SoC for Biomedical Applications Using RFID ISO 15693/NFC5 Interface

Low power, low cost inductively powered passive biotelemetry system involving fully customized RFID/NFC interface base SoC has gained popularity in the last decades. However, most of the SoCs developed are application specific and lacks either on-chip computational or sensor readout capability. In this paper, we present design details of a programmable passive SoC in compliance with ISO 15693/NFC5 standard for biomedical applications. The integrated system consists of a 32-bit microcontroller, a sensor readout circuit, a 12-bit SAR type ADC, 16 kB RAM, 16 kB ROM and other digital peripherals. The design is implemented in a 0.18 μ m CMOS technology and used a die area of 1.52 mm × 3.24 mm. The simulated maximum power consumption of the analog block is 592 μ W. The number of external components required by the SoC is limited to an external memory device, sensors, antenna and some passive components. The external memory device contains the application specific firmware. Based on the application, the firmware can be modified accordingly. The SoC design is suitable for medical implants to measure physiological parameters like temperature, pressure or ECG. As an application example, the authors have proposed a bioimplant to measure arterial blood pressure for patients suffering from Peripheral Artery Disease (PAD)

Addressing On-Chip Power Conversion and Dissipation Issues in Many-Core System-on-a-Chip based on Conventional Silicon and Emerging Nanotechnologies

Title from PDF of title page viewed August 27, 2018Dissertation advisor: Masud H ChowdhuryVitaIncludes bibliographical references (pages 158-163)Thesis (Ph.D.)--School of Computing and Engineering and Department of Physics and Astronomy. University of Missouri--Kansas City, 2017Integrated circuits (ICs) are moving towards system-on-a-chip (SOC) designs. SOC allows various small and large electronic systems to be implemented in a single chip. This approach enables the miniaturization of design blocks that leads to high density transistor integration, faster response time, and lower fabrication costs. To reap the benefits of SOC and uphold the miniaturization of transistors, innovative power delivery and power dissipation management schemes are paramount. This dissertation focuses on on-chip integration of power delivery systems and managing power dissipation to increase the lifetime of energy storage elements. We explore this problem from two different angels: On-chip voltage regulators and power gating techniques. On-chip voltage regulators reduce parasitic effects, and allow faster and efficient power delivery for microprocessors. Power gating techniques, on the other hand, reduce the power loss incurred by circuit blocks during standby mode. Power dissipation (Ptotal = Pstatic and Pdynamic) in a complementary metal-oxide semiconductor (CMOS) circuit comes from two sources: static and dynamic. A quadratic dependency on the dynamic switching power and a more than linear dependency on static power as a form of gate leakage (subthreshold current) exist. To reduce dynamic power loss, the supply power should be reduced. A significant reduction in power dissipation occurs when portions of a microprocessor operate at a lower voltage level. This reduction in supply voltage is achieved via voltage regulators or converters. Voltage regulators are used to provide a stable power supply to the microprocessor. The conventional off-chip switching voltage regulator contains a passive floating inductor, which is difficult to be implemented inside the chip due to excessive power dissipation and parasitic effects. Additionally, the inductor takes a very large chip area while hampering the scaling process. These limitations make passive inductor based on-chip regulator design very unattractive for SOC integration and multi-/many-core environments. To circumvent the challenges, three alternative techniques based on active circuit elements to replace the passive LC filter of the buck convertor are developed. The first inductorless on-chip switching voltage regulator architecture is based on a cascaded 2nd order multiple feedback (MFB) low-pass filter (LPF). This design has the ability to modulate to multiple voltage settings via pulse with modulation (PWM). The second approach is a supplementary design utilizing a hybrid low drop-out scheme to lower the output ripple of the switching regulator over a wider frequency range. The third design approach allows the integration of an entire power management system within a single chipset by combining a highly efficient switching regulator with an intermittently efficient linear regulator (area efficient), for robust and highly efficient on-chip regulation. The static power (Pstatic) or subthreshold leakage power (Pleak) increases with technology scaling. To mitigate static power dissipation, power gating techniques are implemented. Power gating is one of the popular methods to manage leakage power during standby periods in low-power high-speed IC design. It works by using transistor based switches to shut down part of the circuit block and put them in the idle mode. The efficiency of a power gating scheme involves minimum Ioff and high Ion for the sleep transistor. A conventional sleep transistor circuit design requires an additional header, footer, or both switches to turn off the logic block. This additional transistor causes signal delay and increases the chip area. We propose two innovative designs for next generation sleep transistor designs. For an above threshold operation, we present a sleep transistor design based on fully depleted silicon-on-insulator (FDSOI) device. For a subthreshold circuit operation, we implement a sleep transistor utilizing the newly developed silicon-on ferroelectric-insulator field effect transistor (SOFFET). In both of the designs, the ability to control the threshold voltage via bias voltage at the back gate makes both devices more flexible for sleep transistors design than a bulk MOSFET. The proposed approaches simplify the design complexity, reduce the chip area, eliminate the voltage drop by sleep transistor, and improve power dissipation. In addition, the design provides a dynamically controlled Vt for times when the circuit needs to be in a sleep or switching mode.Introduction -- Background and literature review -- Fully integrated on-chip switching voltage regulator -- Hybrid LDO voltage regulator based on cascaded second order multiple feedback loop -- Single and dual output two-stage on-chip power management system -- Sleep transistor design using double-gate FDSOI -- Subthreshold region sleep transistor design -- Conclusio

Tehonhallinta integroidulle hermosignaalin hallintapiirille

Wireless biosignal measurement is a growing opportunity to increase the efficiency of medical procedures: An integrated circuit (receiver) is implanted inside human tissue and it’s output can be read wirelessly with a transmitter that also provides energy for the implant. This method requires RFID technology, where wireless data is transmitted in the RF-band back-and-forth between the receiver and transmitter. The receiver can be implemented either as an active design, where a local power supply is required inside the receiver, or as a passive design without internal energy storage. However, as the modern CMOS process is fairly advanced and the power consumption is low - passive designs are the most common. In the passive design the power for the receiver is drawn from the electromagnetic field transmitted to the chip, generally with electromagnetic induction. A design and implementation of an 860 MHz UHF-band RFID power system is presented in this work and its performance evaluated. The system was designed for a wireless EEG (electroencephalography) reader that can be implanted under the skalp – but the design principles can be expanded upon any RF-band RFID system. The final system works with an input power of -6.8 dBm with a startup time of slightly below 40 µs with specifications of 700 mV to 150 µA load. The LDO line regulation achieves a -51 dB level at DC with the full bandwidth covered. The RF Rectifier uses the design principles of a cross-coupled rectifier and a 63% conversion efficiency is achieved with the proposed matching circuitry. The reference circuitry is designed with the Betamultiplier architecture and expanded slightly to improve the current consumption in the circuit. The reference current is set at 100 nA and reference voltage at 400 mV.Langaton biosignaalien mittaus mahdollistaa yleisien lääketieteellisien signaalien mittauksien tehokkuuden kasvamista: Integroitu elektroninen piiri voidaan asentaa ihmisen kudokseen ja tämän sirun ulosantama tieto voidaan lukea langattomasti lukijalla, mikä useassa tapauksessa toimittaa myös energian sirulle. Tämä teknologia vaatii RFID teknologiaa, mikä on hyvin tunnettu ja tutkittu langattoman datan siirtämiseen kehitelty teknologia radiotaajuuksilla lukijan ja vastaanottimen välillä. Lukija voidaan suunnitella sekä passiiviseksi että aktiiviseksi, mutta modernin CMOS- teknologian tehonkulutus ominaisuuksien vuoksi RFID-lukijat ovat yleisesti passiivisia. Passiivisessa RFID suunnittelussa lukija vastaanottaa tarvitsemansa energian vastaanottimelta yleisesti elektromagneettisen induktion avulla. 860 MHz UHF-kaistan suunnitelu ja toteutus käydään läpi tässä työssä ja suorityskyky on mitattu simulaatioilla. Itse järjestelmä oli alunperin suunniteltu langattomaan EEG-lukijaan (aivosähkökäyrä), minkä pystyisi asentamaan päänahan alle - mutta periaatteet pätevät mihin tahansa RF-kaistan järjestelmään. Lopullinen järjestelmä toimii -6.8 dBm sisääntuloteholla ja käynnistysmisaika on hieman alle 40µs 700 mV ja 150 µA kuormaan. Linjaregulaatio saavuttaa -51 dB arvon alhaisilla taajuuksilla ja regulaatio on koko kaistan kattava. RF-tasasuuntaaja saavuttaa 63 % AC-DC huippu tehonmuutosarvon ehdotetulla impedanssien sovituspiirillä. Referenssipiiri on suunnitellu Betamultiplier-arkkitehtuurilla ja modifioitu pienentämään virrankulutusta. Referenssit ovat 100 nA ja 400 mV

Power Management Circuits for Low-Power RF Energy Harvesters

The paper describes the design and implementation of power management circuits for RF energy harvesters suitable for integration in wireless sensor nodes. In particular, we report the power management circuits used to provide the voltage supply of an integrated temperature sensor with analog-to-digital converter. A DC-DC boost converter is used to transfer efficiently the energy harvested from a generic radio-frequency rectifier into a charge reservoir, whereas a linear regulator scales the voltage supply to a suitable value for a sensing and conversion circuit. Implemented in a 65 nm CMOS technology, the power management system achieves a measured overall efficiency of 20%, with an available power of 4.5 μW at the DC-DC converter input. The system can sustain a temperature measurement rate of one sample/s with an RF input power of −28 dBm, making it compatible with the power levels available in generic outdoor environments