63 research outputs found

    Multilevel Clustering Fault Model for IC Manufacture

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    A hierarchical approach to the construction of compound distributions for process-induced faults in IC manufacture is proposed. Within this framework, the negative binomial distribution is treated as level-1 models. The hierarchical approach to fault distribution offers an integrated picture of how fault density varies from region to region within a wafer, from wafer to wafer within a batch, and so on. A theory of compound-distribution hierarchies is developed by means of generating functions. A study of correlations, which naturally appears in microelectronics due to the batch character of IC manufacture, is proposed. Taking these correlations into account is of significant importance for developing procedures for statistical quality control in IC manufacture. With respect to applications, hierarchies of yield means and yield probability-density functions are considered.Comment: 10 pages, the International Conference "Micro- and Nanoelectronics- 2003" (ICMNE-2003),Zvenigorod, Moscow district, Russia, October 6-10, 200

    Yield modeling for deep sub-micron IC design

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    NASA Space Engineering Research Center for VLSI System Design

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    This annual report outlines the activities of the past year at the NASA SERC on VLSI Design. Highlights for this year include the following: a significant breakthrough was achieved in utilizing commercial IC foundries for producing flight electronics; the first two flight qualified chips were designed, fabricated, and tested and are now being delivered into NASA flight systems; and a new technology transfer mechanism has been established to transfer VLSI advances into NASA and commercial systems

    NASA Space Engineering Research Center for VLSI systems design

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    This annual review reports the center's activities and findings on very large scale integration (VLSI) systems design for 1990, including project status, financial support, publications, the NASA Space Engineering Research Center (SERC) Symposium on VLSI Design, research results, and outreach programs. Processor chips completed or under development are listed. Research results summarized include a design technique to harden complementary metal oxide semiconductors (CMOS) memory circuits against single event upset (SEU); improved circuit design procedures; and advances in computer aided design (CAD), communications, computer architectures, and reliability design. Also described is a high school teacher program that exposes teachers to the fundamentals of digital logic design

    NASA SERC 1990 Symposium on VLSI Design

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    This document contains papers presented at the first annual NASA Symposium on VLSI Design. NASA's involvement in this event demonstrates a need for research and development in high performance computing. High performance computing addresses problems faced by the scientific and industrial communities. High performance computing is needed in: (1) real-time manipulation of large data sets; (2) advanced systems control of spacecraft; (3) digital data transmission, error correction, and image compression; and (4) expert system control of spacecraft. Clearly, a valuable technology in meeting these needs is Very Large Scale Integration (VLSI). This conference addresses the following issues in VLSI design: (1) system architectures; (2) electronics; (3) algorithms; and (4) CAD tools

    Characterisation and performance of optical lithography systems

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    Investigation into voltage and process variation-aware manufacturing test

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    Increasing integration and complexity in IC design provides challenges for manufacturing testing. This thesis studies how process and supply voltage variation influence defect behaviour to determine the impact on manufacturing test cost and quality. The focus is on logic testing of static CMOS designs with respect to two important defect types in deep submicron CMOS: resistive bridges and full opens. The first part of the thesis addresses testing for resistive bridge defects in designs with multiple supply voltage settings. To enable analysis, a fault simulator is developed using a supply voltage-aware model for bridge defect behaviour. The analysis shows that for high defect coverage it is necessary to perform test for more than one supply voltage setting, due to supply voltage-dependent behaviour. A low-cost and effective test method is presented consisting of multi-voltage test generation that achieves high defect coverage and test set size reduction without compromise to defect coverage. Experiments on synthesised benchmarks with realistic bridge locations validate the proposed method.The second part focuses on the behaviour of full open defects under supply voltage variation. The aim is to determine the appropriate value of supply voltage to use when testing. Two models are considered for the behaviour of full open defects with and without gate tunnelling leakage influence. Analysis of the supply voltage-dependent behaviour of full open defects is performed to determine if it is required to test using more than one supply voltage to detect all full open defects. Experiments on synthesised benchmarks using an extended version of the fault simulator tool mentioned above, measure the quantitative impact of supply voltage variation on defect coverage.The final part studies the impact of process variation on the behaviour of bridge defects. Detailed analysis using synthesised ISCAS benchmarks and realistic bridge model shows that process variation leads to additional faults. If process variation is not considered in test generation, the test will fail to detect some of these faults, which leads to test escapes. A novel metric to quantify the impact of process variation on test quality is employed in the development of a new test generation tool, which achieves high bridge defect coverage. The method achieves a user-specified test quality with test sets which are smaller than test sets generated without consideration of process variation

    Evolvable hardware system for automatic optical inspection

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    Characterisation of bipolar parasitic transistors for CMOS process control

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