A highly digital microbolometer ROIC employing a novel event-based readout and two-step time to digital converters

Uncooled infrared imaging systems are a light weight and low cost alternative to their cooled counterparts. Uncooled microbolometer IR focal plane arrays (IRFPAs) for applications such as medical imaging, thermography, night vision, surveillance and industrial process control have recently been under focus. These systems have small pixel pitches ( 250 K). Low NETD demands excellent microbolometer and readout noise performance. If sensitive analog circuits, driving long metal interconnects, are part of the predigitization readout channel, this necessitates the use of power consuming buffers, potentially in conjunction with noise cancellation circuits that result in power and area overhead. Thus re-thinking at the architectural level is crucial to meet these demands. Accordingly, in this thesis a column-parallel readout architecture for frame synchronous microbolometer imagers is proposed that enables low power operation by employing a time mode digitizer. The proposed readout circuit is based on a bridge type detector network with active and reference microbolometers and employs a capacitive transimpedance amplifier (CTIA) incorporating a novel two-step integration mechanism. By using a modified reset scheme in the CTIA, a forward ramp is initiated at the input side followed by the conventional backward integrated ramp at the output. This extends the measurement interval and improves signal-to-noise ratio (SNR). A synchronous counter based TDC measures this interval providing robust digitization. This technique also provides a way of compensating for self-heating effects. Being highly digital, the proposed architecture offers robust frontend processing and achieves a per channel power consumption of 66 µW, which is considerably lower than the most recently reported designs, while maintaining better than 10mK readout NETD

Readout electronics for microbolometer infrared focal plane array

Ph.DDOCTOR OF PHILOSOPH

Low-power CMOS digital-pixel Imagers for high-speed uncooled PbSe IR applications

This PhD dissertation describes the research and development of a new low-cost medium wavelength infrared MWIR monolithic imager technology for high-speed uncooled industrial applications. It takes the baton on the latest technological advances in the field of vapour phase deposition (VPD) PbSe-based medium wavelength IR (MWIR) detection accomplished by the industrial partner NIT S.L., adding fundamental knowledge on the investigation of novel VLSI analog and mixed-signal design techniques at circuit and system levels for the development of the readout integrated device attached to the detector. The work supports on the hypothesis that, by the use of the preceding design techniques, current standard inexpensive CMOS technologies fulfill all operational requirements of the VPD PbSe detector in terms of connectivity, reliability, functionality and scalability to integrate the device. The resulting monolithic PbSe-CMOS camera must consume very low power, operate at kHz frequencies, exhibit good uniformity and fit the CMOS read-out active pixels in the compact pitch of the focal plane, all while addressing the particular characteristics of the MWIR detector: high dark-to-signal ratios, large input parasitic capacitance values and remarkable mismatching in PbSe integration. In order to achieve these demands, this thesis proposes null inter-pixel crosstalk vision sensor architectures based on a digital-only focal plane array (FPA) of configurable pixel sensors. Each digital pixel sensor (DPS) cell is equipped with fast communication modules, self-biasing, offset cancellation, analog-to-digital converter (ADC) and fixed pattern noise (FPN) correction. In-pixel power consumption is minimized by the use of comprehensive MOSFET subthreshold operation. The main aim is to potentiate the integration of PbSe-based infra-red (IR)-image sensing technologies so as to widen its use, not only in distinct scenarios, but also at different stages of PbSe-CMOS integration maturity. For this purpose, we posit to investigate a comprehensive set of functional blocks distributed in two parallel approaches: • Frame-based “Smart” MWIR imaging based on new DPS circuit topologies with gain and offset FPN correction capabilities. This research line exploits the detector pitch to offer fully-digital programmability at pixel level and complete functionality with input parasitic capacitance compensation and internal frame memory. • Frame-free “Compact”-pitch MWIR vision based on a novel DPS lossless analog integrator and configurable temporal difference, combined with asynchronous communication protocols inside the focal plane. This strategy is conceived to allow extensive pitch compaction and readout speed increase by the suppression of in-pixel digital filtering, and the use of dynamic bandwidth allocation in each pixel of the FPA. In order make the electrical validation of first prototypes independent of the expensive PbSe deposition processes at wafer level, investigation is extended as well to the development of affordable sensor emulation strategies and integrated test platforms specifically oriented to image read-out integrated circuits. DPS cells, imagers and test chips have been fabricated and characterized in standard 0.15μm 1P6M, 0.35μm 2P4M and 2.5μm 2P1M CMOS technologies, all as part of research projects with industrial partnership. The research has led to the first high-speed uncooled frame-based IR quantum imager monolithically fabricated in a standard VLSI CMOS technology, and has given rise to the Tachyon series [1], a new line of commercial IR cameras used in real-time industrial, environmental and transportation control systems. The frame-free architectures investigated in this work represent a firm step forward to push further pixel pitch and system bandwidth up to the limits imposed by the evolving PbSe detector in future generations of the device.La present tesi doctoral descriu la recerca i el desenvolupament d'una nova tecnologia monolítica d'imatgeria infraroja de longitud d'ona mitja (MWIR), no refrigerada i de baix cost, per a usos industrials d'alta velocitat. El treball pren el relleu dels últims avenços assolits pel soci industrial NIT S.L. en el camp dels detectors MWIR de PbSe depositats en fase vapor (VPD), afegint-hi coneixement fonamental en la investigació de noves tècniques de disseny de circuits VLSI analògics i mixtes pel desenvolupament del dispositiu integrat de lectura unit al detector pixelat. Es parteix de la hipòtesi que, mitjançant l'ús de les esmentades tècniques de disseny, les tecnologies CMOS estàndard satisfan tots els requeriments operacionals del detector VPD PbSe respecte a connectivitat, fiabilitat, funcionalitat i escalabilitat per integrar de forma econòmica el dispositiu. La càmera PbSe-CMOS resultant ha de consumir molt baixa potència, operar a freqüències de kHz, exhibir bona uniformitat, i encabir els píxels actius CMOS de lectura en el pitch compacte del pla focal de la imatge, tot atenent a les particulars característiques del detector: altes relacions de corrent d'obscuritat a senyal, elevats valors de capacitat paràsita a l'entrada i dispersions importants en el procés de fabricació. Amb la finalitat de complir amb els requisits previs, es proposen arquitectures de sensors de visió de molt baix acoblament interpíxel basades en l'ús d'una matriu de pla focal (FPA) de píxels actius exclusivament digitals. Cada píxel sensor digital (DPS) està equipat amb mòduls de comunicació d'alta velocitat, autopolarització, cancel·lació de l'offset, conversió analògica-digital (ADC) i correcció del soroll de patró fixe (FPN). El consum en cada cel·la es minimitza fent un ús exhaustiu del MOSFET operant en subllindar. L'objectiu últim és potenciar la integració de les tecnologies de sensat d'imatge infraroja (IR) basades en PbSe per expandir-ne el seu ús, no només a diferents escenaris, sinó també en diferents estadis de maduresa de la integració PbSe-CMOS. En aquest sentit, es proposa investigar un conjunt complet de blocs funcionals distribuïts en dos enfocs paral·lels: - Dispositius d'imatgeria MWIR "Smart" basats en frames utilitzant noves topologies de circuit DPS amb correcció de l'FPN en guany i offset. Aquesta línia de recerca exprimeix el pitch del detector per oferir una programabilitat completament digital a nivell de píxel i plena funcionalitat amb compensació de la capacitat paràsita d'entrada i memòria interna de fotograma. - Dispositius de visió MWIR "Compact"-pitch "frame-free" en base a un novedós esquema d'integració analògica en el DPS i diferenciació temporal configurable, combinats amb protocols de comunicació asíncrons dins del pla focal. Aquesta estratègia es concep per permetre una alta compactació del pitch i un increment de la velocitat de lectura, mitjançant la supressió del filtrat digital intern i l'assignació dinàmica de l'ample de banda a cada píxel de l'FPA. Per tal d'independitzar la validació elèctrica dels primers prototips respecte a costosos processos de deposició del PbSe sensor a nivell d'oblia, la recerca s'amplia també al desenvolupament de noves estratègies d'emulació del detector d'IR i plataformes de test integrades especialment orientades a circuits integrats de lectura d'imatge. Cel·les DPS, dispositius d'imatge i xips de test s'han fabricat i caracteritzat, respectivament, en tecnologies CMOS estàndard 0.15 micres 1P6M, 0.35 micres 2P4M i 2.5 micres 2P1M, tots dins el marc de projectes de recerca amb socis industrials. Aquest treball ha conduït a la fabricació del primer dispositiu quàntic d'imatgeria IR d'alta velocitat, no refrigerat, basat en frames, i monolíticament fabricat en tecnologia VLSI CMOS estàndard, i ha donat lloc a Tachyon, una nova línia de càmeres IR comercials emprades en sistemes de control industrial, mediambiental i de transport en temps real.Postprint (published version

Bolometers

Infrared Detectors and technologies are very important for a wide range of applications, not only for Military but also for various civilian applications. Comparatively fast bolometers can provide large quantities of low cost devices opening up a new era in infrared technologies. This book deals with various aspects of bolometer developments. It covers bolometer material aspects, different types of bolometers, performance limitations, applications and future trends. The chapters in this book will be useful for senior researchers as well as beginning graduate students

Imaging by Detection of Infrared Photons Using Arrays of Uncooled Micromechanical Detectors

The objective of this dissertation was to investigate the possibility of uncooled infrared imaging using arrays of optically-probed micromechanical detectors. This approach offered simplified design, improved reliability and lower cost, while attaining the performance approaching that contemporary uncooled imagers. Micromechanical infrared detectors undergo deformation due to the bimetallic effect when they absorb infrared photons. The performance improvements were sought through changes in structural design such as modification and simplification of detector geometry as well as changes in the choice of materials. Detector arrays were designed, fabricated and subsequently integrated into the imaging system and relevant parameters, describing the sensitivity and signal-to-noise ratio, were characterized. The values of these parameters were compared to values published for other uncooled micromechanical detectors and commercial uncooled detectors. Several designs have been investigated. The first design was made of standard materials for this type of detectors - silicon nitride and gold. The design utilized changes in detector geometry such as reduction in size and featured an optical resonant cavity between the detector and the substrate on which arrays were built. This design provided decrease in levels of noise equivalent temperature difference (NETD) to as low as 500 mK. The NETD parameter limits the lowest temperature gradient on the imaged object that can be resolved by the imaging device. The second design used silicon dioxide and aluminum, materials not yet fully investigated. It featured a removed substrate beneath each detector in the array, to allow unobstructed transmission of incoming IR radiation and improve the thermal isolation of the detector. Second design also featured an amorphous silicon layer between silicon dioxide and aluminum layers, to serve as an optical resonant cavity. The NETD levels as low as 120 mK have been achieved. The only difference between the third and the second design was the modification of the geometry to minimize the noise. Successfully obtained thermal images and improved NETD values, approaching those of modern uncooled imagers (20 mK for commercial bolometer-based detectors), confirm the viability of this approach. With further improvements, this approach has a potential of becoming a lowcost alternative for uncooled infrared imaging

Photodetectors

In this book some recent advances in development of photodetectors and photodetection systems for specific applications are included. In the first section of the book nine different types of photodetectors and their characteristics are presented. Next, some theoretical aspects and simulations are discussed. The last eight chapters are devoted to the development of photodetection systems for imaging, particle size analysis, transfers of time, measurement of vibrations, magnetic field, polarization of light, and particle energy. The book is addressed to students, engineers, and researchers working in the field of photonics and advanced technologies

Low-power CMOS circuit design for fast infrared imagers

La present tesi de màster detalla novedoses tècniques circuitals per al disseny de circuits integrats digitals CMOS de lectura compactes, de baixa potència i completament programables, destinats a aplicacions d'IR d'alta velocitat operant a temperatura ambient. En aquest sentit, el treball recull i amplia notablement la recerca iniciada en el Projecte Final de Carrera "Tècniques de disseny CMOS per a sistemes de visió híbrids de pla focal modular" obtenint-se resultats específics en tres diferents àrees: Recerca de l'arquitectura òptima d'FPA, des del punt de vista funcional i de construcció física. Disseny d'un conjunt complet de blocs bàsics d'autopolarització, compensació de la capacitat d'entrada i del corrent d'obscuritat, conversió A/D i interfície d'E/S exclusivament digital, amb compensació de l'FPN. Aplicació industrial real: Integraciió de tres versions diferents de píxel per sensors PbSe d'IR i fabricació de mòduls ROIC monolítics i híbrids en tecnologia CMOS estàndard 0.35&·956;m 2-PoliSi4-metall. Caracterització elèctrica i òptica-preliminar de les llibreries de disseny

Miniaturized Silicon Photodetectors

Silicon (Si) technologies provide an excellent platform for the design of microsystems where photonic and microelectronic functionalities are monolithically integrated on the same substrate. In recent years, a variety of passive and active Si photonic devices have been developed, and among them, photodetectors have attracted particular interest from the scientific community. Si photodiodes are typically designed to operate at visible wavelengths, but, unfortunately, their employment in the infrared (IR) range is limited due to the neglectable Si absorption over 1100 nm, even though the use of germanium (Ge) grown on Si has historically allowed operations to be extended up to 1550 nm. In recent years, significant progress has been achieved both by improving the performance of Si-based photodetectors in the visible range and by extending their operation to infrared wavelengths. Near-infrared (NIR) SiGe photodetectors have been demonstrated to have a “zero change” CMOS process flow, while the investigation of new effects and structures has shown that an all-Si approach could be a viable option to construct devices comparable with Ge technology. In addition, the capability to integrate new emerging 2D and 3D materials with Si, together with the capability of manufacturing devices at the nanometric scale, has led to the development of new device families with unexpected performance. Accordingly, this Special Issue of Micromachines seeks to showcase research papers, short communications, and review articles that show the most recent advances in the field of silicon photodetectors and their respective applications

Performance evaluation of an uncooled infrared array camera.

This thesis describes work carried out on an uncooled pyroelectric infrared array camera with the aim of improving performance and increasing its value in commercial markets. The image processing circuitry of the camera was bypassed and replaced by a purpose built 14 bit digitiser and processing algorithms running on a PC. The constructed digitiser was shown to meet the performance needs of the detector. A model was developed for the camera's performance, taking into account the nature of the chopped pyroelectric detector, and the wavelength passband of the camera. The model suggested that placing a temperature sensor close to the chopper blade of the camera would allow radiometric measurements to be made with the camera. Experimental results verified the predicted camera behaviour and radiometric performance was found to be accurate to within +1.5K when imaging flat fields in a stable thermal environment. Significant distortion and radiometric errors were found when imaging high contrast scenes an algorithm was written to correct this distortion. The algorithm was shown to perform well, drastically reducing distortion and improving radiometric accuracy in all scenes tested. The source of the distortion was not identified, but it is thought to be unrelated to the physical behaviour of the pyroelectric array. The performance of the modified camera is discussed in relation to the current state of the art, and in relation to the performance needs of existing and emerging infrared imaging markets

A Comparative Evaluation of the Detection and Tracking Capability Between Novel Event-Based and Conventional Frame-Based Sensors

Traditional frame-based technology continues to suffer from motion blur, low dynamic range, speed limitations and high data storage requirements. Event-based sensors offer a potential solution to these challenges. This research centers around a comparative assessment of frame and event-based object detection and tracking. A basic frame-based algorithm is used to compare against two different event-based algorithms. First event-based pseudo-frames were parsed through standard frame-based algorithms and secondly, target tracks were constructed directly from filtered events. The findings show there is significant value in pursuing the technology further