Modeling of gallium nitride transistors for high power and high temperature applications

Wide bandgap (WBG) semiconductors such as GaN and SiC are emerging as promising alternatives to Si for new generation of high efficiency power devices. GaN has attracted a lot of attention recently because of its superior material properties leading to potential realization of power transistors for high power, high frequency, and high temperature applications. In order to utilize the full potential of GaN-based power transistors, proper device modeling is essential to verify its operation and improve the design efficiency. In this view, this research work presents modeling and characterization of GaN transistors for high power and high temperature applications. The objective of this research work includes three key areas of GaN device modeling such as physics-based analytical modeling, device simulation with numerical simulator and electrothermal SPICE model for circuit simulation. The analytical model presented in this dissertation enables understanding of the fundamental physics of this newly emerged GaN device technology to improve the operation of existing device structures and to optimize the device configuration in the future. The numerical device simulation allows to verify the analytical model and study the impact of different device parameters. An empirical SPICE model for standard circuit simulator has been developed and presented in the dissertation which allows simulation of power electronic circuits employing GaN power devices. The empirical model provides a good approximation of the device behavior and creates a link between the physics-based analytical model and the actual device testing data. Furthermore, it includes an electrothermal model which can predict the device behavior at elevated temperatures as required for high temperature applications.Includes bibliographical reference

Boundary layer flow and heat transfer over a permeable shrinking sheet with partial slip

The steady, laminar flow of an incompressible viscous fluid over a shrinking permeable sheet is investigated. The governing partial differential equations are transformed into ordinary differential equations using similarity transformation, before being solved numerically by the shooting method. The features of the flow and heat transfer characteristics for different values of the slip parameter and Prandtl number are analyzed and discussed. The results indicate that both the skin friction coefficient and the heat transfer rate at the surface increase as the slip parameter increases

SOI RF-MEMS Based Variable Attenuator for Millimeter-Wave Applications

The most-attractive feature of microelectromechanical systems (MEMS) technology is that it enables the integration of a whole system on a single chip, leading to positive effects on the performance, reliability and cost. MEMS has made it possible to design IC-compatible radio frequency (RF) devices for wireless and satellite communication systems. Recently, with the advent of 5G, there is a huge market pull towards millimeter-wave devices. Variable attenuators are widely employed for adjusting signal levels in high frequency equipment. RF circuits such as automatic gain control amplifiers, broadband vector modulators, full duplex wireless systems, and radar systems are some of the primary applications of variable attenuators. This thesis describes the development of a millimeter-wave RF MEMS-based variable attenuator implemented by monolithically integrating Coplanar Waveguide (CPW) based hybrid couplers with lateral MEMS varactors on a Silicon–on–Insulator (SOI) substrate. The MEMS varactor features a Chevron type electrothermal actuator that controls the lateral movement of a thick plate, allowing precise change in the capacitive loading on a CPW line leading to a change in isolation between input and output. Electrothermal actuators have been employed in the design instead of electrostatic ones because they can generate relatively larger in-line deflection and force within a small footprint. They also provide the advantage of easy integration with other electrical micro-systems on the same chip, since their fabrication process is compatible with general IC fabrication processes. The development of an efficient and reliable actuator has played an important role in the performance of the proposed design of MEMS variable attenuator. A Thermoreflectance (TR) imaging system is used to acquire the surface temperature profiles of the electrothermal actuator employed in the design, so as to study the temperature distribution, displacement and failure analysis of the Chevron actuator. The 60 GHz variable attenuator was developed using a custom fabrication process on an SOI substrate with a device footprint of 3.8 mm x 3.1 mm. The fabrication process has a high yield due to the high-aspect-ratio single-crystal-silicon structures, which are free from warping, pre-deformation and sticking during the wet etching process. The SOI wafer used has a high resistivity (HR) silicon (Si) handle layer that provides an excellent substrate material for RF communication devices at microwave and millimeter wave frequencies. This low-cost fabrication process provides the flexibility to extend this module and implement more complex RF signal conditioning functions. It is thus an appealing candidate for realizing a wide range of reconfigurable RF devices. The measured RF performance of the 60 GHz variable attenuator shows that the device exhibits attenuation levels (|S21|) ranging from 10 dB to 25 dB over a bandwidth of 4 GHz and a return loss of better than 20 dB. The thesis also presents the design and implementation of a MEMS-based impedance tuner on a Silicon-On-Insulator (SOI) substrate. The tuner is comprised of four varactors monolithically integrated with CPW lines. Chevron actuators control the lateral motion of capacitive thick plates used as contactless lateral MEMS varactors, achieving a capacitance range of 0.19 pF to 0.8 pF. The improvement of the Smith chart coverage is achieved by proper choice of the electrical lengths of the CPW lines and precise control of the lateral motion of the capacitive plates. The measured results demonstrate good impedance matching coverage, with an insertion loss of 2.9 dB. The devices presented in this thesis provide repeatable and reliable operation due to their robust, thick-silicon structures. Therefore, they exhibit relatively low residual stress and are free from stiction and micro-welding problems

Ultra Wideband 5 W Hybrid Power Amplifier Design Using Silicon Carbide MESFETs

Aufgrund des hohen Bandabstandes von SiC besitzen SiC-MESFETs ein hohe Duruchbruchspannung und können folglich bei hohen Versorgungsspannungen betrieben werden. Darüber hinaus besitzen sie eine hohe Elektronensätigungsgeschwindigkeit und Wärmeleitfähigkeit. Aufgrund diese eigenschaften eignen sich diese bauelemente hervorragend für die Entwiklung von breitbandigen Leistungsverstärkern bis in den unteren GHz-Bereich. In dieser Arbeit wird ein neues empirisches Modell für SiC MESFET vorgeschlagen. Ein kommerziell erhältlicher, gehäuster MESFET Typ (CREE CRF24010) wird für die Entwicklung des Modelles verwendet. Messungen wurden sowohl in Arbeitspunkten mit als auch ohne Vorspannung durchgeführt um die Gleichungen und Parameter abzuleiten. Die Cold FET Technik wurde verwendet um die parasitären extrinsischen Elemente zu bestimmen, während die arbeitspunktabhängigen Elemente des Modelles analytisch bei mehreren Arbeitspunkten bestimmt wurden. Nichtlineare Gleichungen für die arbeitspunktabhängigen Elemente wurden ebenfalls abgeleitet. Das so entwickelte Modell für den SiC MESFET wurde sowohl hinsichtlich des Kleinsignal als auch des Großsignalverhaltens überprüft. Fünf verschiedene Generationen von Breitband-Leistungsverstärkern wurden auf Grundlage des entwickelten Modelles implementiert. Dabei wurde keinerlei Impedanztransformator eingesetzt. Eine neuartige breitbandige Biasstruktur wurde entwickelt, um gute Isolation und geringe Verluste über die angestrebte Bandbreite zu erreichen. Die Anpassungsnetzwerke an Eingang, Ausgang und zwischen den Stufen sowie die Parallel-Rückkopplung wurden mit Hilfe von Mikrostreifenleitungstechnik realisiert um die Bandbreite zu erhöhen und die Stabilität zu verbessern. Als erste Generation wird ein einstufiger 5 Watt Leistungsverstärker mit einem SiC MESFET entworfen und aufgebaut, der den Frequenzbereich von 10 MHz bis 2,4 GHz abdeckt. Eine Leistungsverstärkung von 6 dB, 37 dBm Ausgangsleistung, 33% PAE und 52 dBm OIP3 wurden erreicht. Ein zweistufiger Leistungsverstärker mit hoher Verstärkung für die selbe Bandbreite, der einen GaAs und einen SiC MESFET in Kaskade verwendet, wurde ebenfalls aufgebaut. Typische Werte von 23 dB Leistungsverstärkung, 37 dBm Ausgangsleistung, 28 % PAE und 47 dBm OIP3 wurden erreicht. Der Einfluss der Treiberstufe auf die Leistungs- und Linearitätseigenschaften der zweiten Generation wurde untersucht. Basierend auf SiC Chips wurden die dritte und vierte Generation in Form von einstufigen und zweistufigen ultra-breitband Leistungsverstärkern implementiert, die das Frequenzband von 1 MHz bis 5 GHz abdecken. Der Einfluss des GaAs FET Treibers in der vierten Kategorie auf die Gesamteigenschaften wurde ebenfalls diskutiert. Unter Einsatz der Rückkopplungs-Kompensationstechnik wurde ein schmalbandiger 10 W Leistungsverstärkerentwurf mit hoher Verstärkung, basierend auf einem SiC Chip, als fünftes Beispiel vorgestellt. Alle Leistungs- und Linearitäts-Ergebnisse wurden über das gesamte Frequenzband ermittelt. Die Entwurfsprozedur wird detailliert beschrieben und die Ergebnisse werden diskutiert und ausführlich mit den Simulationen verglichen.SiC MESFETs have an enormous potential for realizing high-power amplifiers at microwave frequencies due to their wide band-gap features of high breakdown field, high electron saturation velocity and high operating temperature. In this thesis, a new empirical model for SiC MESFET is proposed. A commercially packaged high power MESFET device (CREE CRF24010) is adopted for the model development. Both hot and cold bias condition measurements are performed to derive equations and parameters. Cold FET technique is used to extract the parasitic extrinsic elements whereas the bias-dependent model elements are extracted analytically from multiple bias points. Nonlinear equations for the bias dependent elements are derived, too. The derived model for the SiC MESFET has been verified in small signal as well as large signal performances. Five different generations of broadband power amplifiers based on the developed model have been implemented. No impedance transformer was used at all. A novel broadband choke structure has been developed to obtain good isolation and low loss over the desired bandwidth. Input, interstage and output matching networks and shunt feedback topology have been designed based on microstip technique to increase the bandwidth and improve the stability. In the first generation, a single stage 5-watt power amplifier using a SiC MESFET covering the frequency range from 10 MHz to 2.4 GHz is designed and fabricated. A power gain of 6 dB, 37 dBm output power, 33 % PAE and 52 dBm OIP3 have been achieved. A high gain two stage power amplifier covering the same bandwidth using a GaAs- and a SiC- MESFET in cascade also has been fabricated. Typical values of 23 dB power gain, 37 dBm output power, 28 % PAE and 47 dBm OIP3 have been obtained. The impact of the driver stage on power and linearity performances of the second generation has been discussed. Based on SiC Chip, the third and the fourth generation represent ultra wideband single stage and two stage power amplifiers, covering the frequency band from 1 MHz to 5 GHz have been simulated. Small signal and harmonic balance simulations based on ADS have been introduced. The impact of the GaAs FET driver in the fourth category on the overall performances also has been discussed. Using feedback compensation technique, a 10-W narrow band high gain power amplifier design based on SiC Chip has been presented as a fifth example. All power and linearity results were obtained over the whole frequency band. The design procedure is given in detail and the results are being discussed and compared with simulations extensively

Contributing Towards Improved Communication Systems for Future Cellular Networks

The rapid growth of wireless communications and upcoming requirements of 5G networks are driving interest in the areas from wireless transceivers to sensor nodes. One of the most vital components of the wireless transmitter is the radio frequency power amplifier. A large-signal device model of the transistor is an essential part of the power amplifier design process. Despite the significant developments in large-signal modelling, the models for commercially available devices from the manufacturers are still under continuous development and often lack accuracy. One of the main objectives of this thesis is the validation and extension of an analytic approach as an alternative to conventional large-signal modelling for power amplifier designing. The first contribution is the derivation of new analytical expressions based on the equivalent circuit model, including the extrinsic parasitic elements introduced by the package, to calculate the optimum source and load impedances and to predict the performance of a radio frequency power amplifier. These expressions allow to evaluate the effects of a package on the optimum impedance values and performance. The second contribution is establishing the accuracy of the analytic approach. Harmonic balance simulation is used as the first benchmark to evaluate the method at various bias points and frequencies. The validity of the analytic approach is demonstrated at a frequency of 3.25 GHz for gallium nitride based high power devices with measurement of prototype radio frequency power amplifier designed for the impedance values obtained from the analytic expressions. The third contribution is extending the analytic approach to determine the optimum impedance values for different criteria of maximum gain, linearity and efficiency. The analytic expressions are utilized to gain an understanding of the relationship among the device performance, the elements of devices and package models and I-V characteristics. The wireless sensor networks are essential elements for the realization of the Internet of Things. Sensor nodes, which are the fundamental building blocks of these networks, have to be energy efficient and able to produce energy to reduce the maintenance cost and to prolong their lifetime. The second main aim of the thesis is designing and implementing an ultra-low power autonomous wireless sensor node that harvests the indoor light energy. The forth contribution of this thesis includes a comprehensive comparison of six different solar cell technologies under a controlled light intensity, carried out to determine the best option for indoor light energy harvesting. The power consumption of the node is reduced by selecting the appropriate hardware and implementing a wake-up receiver to reduce the active and idle mode currents. The low power consumption coupled with light energy harvesting significantly prolong the operating lifetime of the node

Design of SiGe HBT power amplifiers for microwave radar applications

A novel modification to the standard cascode amplifier architecture is presented in SiGe which allows for an optimal separation of gain and breakdown functions through the mixed breakdown cascade architecture, opening the door for moderate power amplifiers in SiGe. Utilizing this technique, a two-stage, high-gain amplifier operating at X-Band is fabricated and measured. The 20 dB of gain per stage represents the highest gain at X-Band at the time of publication. Additionally, a near one Watt power amplifier is designed and fabricated at X-Band, which represents the highest output power in SiGe at X-Band at time of publication. Related to the power amplifier design, thermal considerations are also investigated. The validity of utilizing lumped mutual thermal coupling in SiGe devices is presented. Using this finding, a thermal coupling model and network which are compliant for use with commonly available HBT models and circuit simulators is presented. This model and network is used to thermally optimize SiGe PA cells based upon layout spacing.Ph.D.Committee Member: John Cressler; Committee Member: John Papapolymerou; Committee Member: Joy Laskar; Committee Member: Thomas Morley; Committee Member: William Hun

ELECTRON DEVICE NONLINEAR MODELLING FOR MICROWAVE CIRCUIT DESIGN

The electron device modelling is a research topic of great relevance, since the performances required to devices are continuously increasing in terms of frequency, power and linearity: new technologies are affirming themselves, bringing new challenges for the modelling community. In addition, the use of monolithic microwave integrated circuits (MMIC) is also increasing, making necessary the availability, in the circuit design phase, of models which are computationally efficient and at the same more and more accurate. The importance of modelling is even more evident by thinking at the wide area covered by microwave systems: terrestrial broadband, satellite communications, automotive applications, but also military industry, emergency prevention systems or medical instrumentations. This work contains a review of the empirical modelling approach, providing the description of some well-known equivalent-circuit and black-box models. In addition, an original modelling approach is described in details, together with the various possible applications: modelling of nonquasi-static phenomena as well as of low-frequency dispersive effects. A wide experimental validation is provided, for GaAs- and GaN-based devices. Other modelling issues are faced up, like the extraction of accurate models for Cold-FET or the more convenient choice of the data-interpolator in table-based models. Finally, the device degradation is also treated: a new measurement setup will be presented, aimed to the characterization of the device breakdown walkout under actual operating conditions for power amplifiers